页 732 - 晶体管 - FET，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
联系我们
SalesDept@heisener.com +86-0755-87210559 ext.802
登入/注册
BOM
购物车 0

晶体管 - FET，MOSFET - 单

记录 42,029
页  732/1,401
图片
零件编号
制造商
描述
封装
库存
数量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
AUXMOS20956STR
Infineon Technologies

MOSFET N-CH 16SOIC

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
库存7,008
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRF3704LPBF
Infineon Technologies

MOSFET N-CH 20V 77A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1996pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 87W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存5,968
MOSFET (Metal Oxide)
20V
77A (Tc)
4.5V, 10V
3V @ 250µA
19nC @ 4.5V
1996pF @ 10V
±20V
-
87W (Tc)
9 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2Pak, TO-262AA
IRFR3504ZTR
Infineon Technologies

MOSFET N-CH 40V 42A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 42A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存5,632
MOSFET (Metal Oxide)
40V
42A (Tc)
10V
4V @ 50µA
45nC @ 10V
1510pF @ 25V
±20V
-
90W (Tc)
9 mOhm @ 42A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
NTD20N06T4
ON Semiconductor

MOSFET N-CH 60V 20A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1015pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.88W (Ta), 60W (Tj)
  • Rds On (Max) @ Id, Vgs: 46 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存5,008
MOSFET (Metal Oxide)
60V
20A (Ta)
10V
4V @ 250µA
30nC @ 10V
1015pF @ 25V
±20V
-
1.88W (Ta), 60W (Tj)
46 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK-3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot RFD16N05
Fairchild/ON Semiconductor

MOSFET N-CH 50V 16A I-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 72W (Tc)
  • Rds On (Max) @ Id, Vgs: 47 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251AA
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存859,164
MOSFET (Metal Oxide)
50V
16A (Tc)
10V
4V @ 250µA
80nC @ 20V
900pF @ 25V
±20V
-
72W (Tc)
47 mOhm @ 16A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-251AA
TO-251-3 Short Leads, IPak, TO-251AA
IPW65R190CFDAFKSA1
Infineon Technologies

MOSFET N-CH 650V 17.5A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 151W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3
封装: TO-247-3
库存6,704
MOSFET (Metal Oxide)
650V
17.5A (Tc)
10V
4.5V @ 700µA
68nC @ 10V
1850pF @ 100V
±20V
-
151W (Tc)
190 mOhm @ 7.3A, 10V
-40°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
IPD050N10N5ATMA1
Infineon Technologies

MOSFET N-CH TO-252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 84µA
  • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存6,224
MOSFET (Metal Oxide)
100V
80A (Tc)
6V, 10V
3.8V @ 84µA
64nC @ 10V
4700pF @ 50V
±20V
-
150W (Tc)
5 mOhm @ 40A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
IPB80P04P4L06ATMA1
Infineon Technologies

MOSFET P-CH TO263-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6580pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存3,216
MOSFET (Metal Oxide)
40V
80A (Tc)
4.5V, 10V
2.2V @ 150µA
104nC @ 10V
6580pF @ 25V
±16V
-
88W (Tc)
6.4 mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IRF9Z14STRLPBF
Vishay Siliconix

MOSFET P-CH 60V 6.7A D2PAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
  • Rds On (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存18,384
MOSFET (Metal Oxide)
60V
6.7A (Tc)
10V
4V @ 250µA
12nC @ 10V
270pF @ 25V
±20V
-
3.7W (Ta), 43W (Tc)
500 mOhm @ 4A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RJK03M5DPA-00#J5A
Renesas Electronics America

MOSFET N-CH 30V 30A WPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WPAK
  • Package / Case: 8-WFDFN Exposed Pad
封装: 8-WFDFN Exposed Pad
库存6,768
MOSFET (Metal Oxide)
30V
30A (Ta)
4.5V, 10V
-
10.4nC @ 4.5V
1890pF @ 10V
±20V
-
30W (Tc)
6.5 mOhm @ 15A, 10V
150°C (TJ)
Surface Mount
8-WPAK
8-WFDFN Exposed Pad
hot AON7409
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 16A 8DFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2142pF @ 15V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (3x3)
  • Package / Case: 8-PowerSMD, Flat Leads
封装: 8-PowerSMD, Flat Leads
库存497,256
MOSFET (Metal Oxide)
30V
16A (Ta), 32A (Tc)
4.5V, 10V
2.7V @ 250µA
58nC @ 10V
2142pF @ 15V
±25V
-
3.1W (Ta), 96W (Tc)
8.5 mOhm @ 16A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (3x3)
8-PowerSMD, Flat Leads
5HP01SS-TL-E
ON Semiconductor

MOSFET P-CH 50V 70MA SSFP3

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-SSFP
  • Package / Case: 3-SMD, Flat Leads
封装: 3-SMD, Flat Leads
库存5,904
-
-
-
-
-
-
-
-
-
-
-
-
Surface Mount
3-SSFP
3-SMD, Flat Leads
SUP70040E-GE3
Vishay Siliconix

MOSFET N-CH 100V 120A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存5,728
MOSFET (Metal Oxide)
100V
120A (Tc)
7.5V, 10V
4V @ 250µA
120nC @ 10V
5100pF @ 50V
±20V
-
375W (Tc)
4 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TSM2312CX RFG
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, TRENC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.9A
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 750mW (Ta)
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 4.9A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: TO-236-3, SC-59, SOT-23-3
库存3,344
MOSFET (Metal Oxide)
20V
4.9A
1.8V, 4.5V
1V @ 250µA
11.2nC @ 4.5V
500pF @ 10V
±8V
-
750mW (Ta)
33 mOhm @ 4.9A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
PMZB1200UPEYL
Nexperia USA Inc.

MOSFET P-CH 30V SOT883

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 410mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 43.2pF @ 15V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 410mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN1006B-3
  • Package / Case: 3-XFDFN
封装: 3-XFDFN
库存86,712
MOSFET (Metal Oxide)
30V
410mA (Ta)
1.5V, 4.5V
950mV @ 250µA
1.2nC @ 4.5V
43.2pF @ 15V
±8V
-
310mW (Ta), 1.67W (Tc)
1.4 Ohm @ 410mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
DFN1006B-3
3-XFDFN
hot FDP24N40
Fairchild/ON Semiconductor

MOSFET N-CH 400V 24A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 227W (Tc)
  • Rds On (Max) @ Id, Vgs: 175 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封装: TO-220-3
库存139,644
MOSFET (Metal Oxide)
400V
24A (Tc)
10V
5V @ 250µA
60nC @ 10V
3020pF @ 25V
±30V
-
227W (Tc)
175 mOhm @ 12A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot NTMFS4C05NT1G
ON Semiconductor

MOSFET N-CH 30V 11.9A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1972pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 770mW (Ta), 33W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存164,160
MOSFET (Metal Oxide)
30V
11.9A (Ta)
4.5V, 10V
2.2V @ 250µA
14nC @ 4.5V
1972pF @ 15V
±20V
-
770mW (Ta), 33W (Tc)
3.4 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
BSS84PH6327XTSA2
Infineon Technologies

MOSFET P-CH 60V 170MA SOT-23

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Ta)
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 170mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: TO-236-3, SC-59, SOT-23-3
库存771,486
MOSFET (Metal Oxide)
60V
170mA (Ta)
4.5V, 10V
2V @ 20µA
1.5nC @ 10V
19pF @ 25V
±20V
-
360mW (Ta)
8 Ohm @ 170mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT23-3
TO-236-3, SC-59, SOT-23-3
TK31V60X,LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 30.8A 5DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 240W (Tc)
  • Rds On (Max) @ Id, Vgs: 98 mOhm @ 9.4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (8x8)
  • Package / Case: 4-VSFN Exposed Pad
封装: 4-VSFN Exposed Pad
库存19,080
MOSFET (Metal Oxide)
600V
30.8A (Ta)
10V
3.5V @ 1.5mA
65nC @ 10V
3000pF @ 300V
±30V
Super Junction
240W (Tc)
98 mOhm @ 9.4A, 10V
150°C (TJ)
Surface Mount
5-DFN (8x8)
4-VSFN Exposed Pad
hot RJK0651DPB-00#J5
Renesas Electronics America

MOSFET N-CH 60V 25A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2030pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 12.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK
  • Package / Case: SC-100, SOT-669
封装: SC-100, SOT-669
库存10,008
MOSFET (Metal Oxide)
60V
25A (Ta)
4.5V, 10V
-
15nC @ 4.5V
2030pF @ 10V
±20V
-
45W (Tc)
14 mOhm @ 12.5A, 10V
150°C (TJ)
Surface Mount
LFPAK
SC-100, SOT-669
hot NDS331N
Fairchild/ON Semiconductor

MOSFET N-CH 20V 1.3A SSOT3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 162pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SuperSOT-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: TO-236-3, SC-59, SOT-23-3
库存1,566,768
MOSFET (Metal Oxide)
20V
1.3A (Ta)
2.7V, 4.5V
1V @ 250µA
5nC @ 4.5V
162pF @ 10V
±8V
-
500mW (Ta)
160 mOhm @ 1.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SuperSOT-3
TO-236-3, SC-59, SOT-23-3
BSC320N20NS3GATMA1
Infineon Technologies

MOSFET N-CH 200V 36A TDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 32mOhm @ 36A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-1
  • Package / Case: 8-PowerTDFN
封装: -
库存65,658
MOSFET (Metal Oxide)
200 V
36A (Tc)
10V
4V @ 90µA
29 nC @ 10 V
2350 pF @ 100 V
±20V
-
125W (Tc)
32mOhm @ 36A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-1
8-PowerTDFN
AP2326GN-HF-ML
MOSLEADER

Single N 30V 4.7A SOT-23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RF1S45N02LSM9A
Harris Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FDPF041N06BL1-F154
onsemi

MOSFET N-CH 60V 77A TO220F-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5690 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 44.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.1mOhm @ 77A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F-3
  • Package / Case: TO-220-3 Full Pack
封装: -
库存2,640
MOSFET (Metal Oxide)
60 V
77A (Tc)
-
4V @ 250µA
69 nC @ 10 V
5690 pF @ 30 V
±20V
-
44.1W (Tc)
4.1mOhm @ 77A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220F-3
TO-220-3 Full Pack
ISL9N310AD3
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 70W (Ta)
  • Rds On (Max) @ Id, Vgs: 10Ohm @ 35A, 10A
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251 (IPAK)
  • Package / Case: TO-251-3 Stub Leads, IPAK
封装: -
Request a Quote
MOSFET (Metal Oxide)
30 V
35A (Tc)
4.5V, 10V
3V @ 250µA
48 nC @ 10 V
1800 pF @ 15 V
±20V
-
70W (Ta)
10Ohm @ 35A, 10A
-55°C ~ 175°C (TJ)
Through Hole
TO-251 (IPAK)
TO-251-3 Stub Leads, IPAK
FDD5N50TM-WS
onsemi

MOSFET N-CH 500V 4A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
Request a Quote
MOSFET (Metal Oxide)
500 V
4A (Tc)
10V
5V @ 250µA
15 nC @ 10 V
640 pF @ 25 V
±30V
-
40W (Tc)
1.4Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
PSMN1R5-40YSD-2X
Nexperia USA Inc.

PSMN1R5-40YSD/SOT669/LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 240A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7752 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Body)
  • Power Dissipation (Max): 238W (Ta)
  • Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
封装: -
Request a Quote
MOSFET (Metal Oxide)
40 V
240A (Ta)
10V
3.6V @ 1mA
99 nC @ 10 V
7752 pF @ 20 V
±20V
Schottky Diode (Body)
238W (Ta)
1.5mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
IRFR220PBF-BE3
Vishay Siliconix

N-CHANNEL 200V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 800mOhm @ 2.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
Request a Quote
MOSFET (Metal Oxide)
200 V
4.8A (Tc)
10V
4V @ 250µA
14 nC @ 10 V
260 pF @ 25 V
±20V
-
2.5W (Ta), 42W (Tc)
800mOhm @ 2.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
94-2312PBF
Infineon Technologies

IC MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-