图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 60V 90A TO263-3
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,768 |
|
MOSFET (Metal Oxide) | 60V | 90A (Tc) | 10V | 4V @ 90µA | 128nC @ 10V | 10400pF @ 25V | ±20V | - | 150W (Tc) | 3.7 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 8.3A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存16,068 |
|
MOSFET (Metal Oxide) | 30V | 8.3A (Ta) | 4.5V | 1V @ 250µA | 17nC @ 5V | - | ±12V | - | 2.5W (Ta) | 25 mOhm @ 7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Microsemi Corporation |
MOSFET N-CH 500V 58A ISOTOP
|
封装: SOT-227-4, miniBLOC |
库存5,088 |
|
MOSFET (Metal Oxide) | 500V | 58A (Tc) | 10V | 5V @ 2.5mA | 340nC @ 10V | 13500pF @ 25V | ±30V | - | 540W (Tc) | 65 mOhm @ 42A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP? | SOT-227-4, miniBLOC |
||
Global Power Technologies Group |
MOSFET N-CH 600V 4A TO220
|
封装: TO-220-3 |
库存5,888 |
|
MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 5V @ 250µA | 12nC @ 10V | 545pF @ 25V | ±30V | - | 86.2W (Tc) | 2.5 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Infineon Technologies |
MOSFET P-CH 100V 38A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存4,320 |
|
MOSFET (Metal Oxide) | 100V | 38A (Tc) | 10V | 4V @ 250µA | 230nC @ 10V | 2780pF @ 25V | ±20V | - | 3.1W (Ta), 170W (Tc) | 60 mOhm @ 38A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Microsemi Corporation |
MOSFET N-CH 200V 109A SP1
|
封装: SP1 |
库存5,920 |
|
MOSFET (Metal Oxide) | 200V | 109A (Tc) | 10V | 4V @ 2.5mA | - | 9880pF @ 25V | ±30V | - | 480W (Tc) | 19 mOhm @ 50A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
||
GeneSiC Semiconductor |
TRANS SJT 1200V 5A
|
封装: TO-247-3 |
库存4,432 |
|
SiC (Silicon Carbide Junction Transistor) | 1200V | 5A (Tc) | - | - | - | - | - | - | 106W (Tc) | 280 mOhm @ 5A | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
||
Fairchild/ON Semiconductor |
PQFN88 PKG, 99MOHM, 650V, SUPERF
|
封装: - |
库存7,280 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
MOSFET N-CH 12V 35A PPAK 1212-8
|
封装: PowerPAK? 1212-8 |
库存4,256 |
|
MOSFET (Metal Oxide) | 12V | 35A (Tc) | 2.5V, 4.5V | 1.8V @ 250µA | 70nC @ 10V | 2800pF @ 6V | ±12V | - | 3.8W (Ta), 52W (Tc) | 3.7 mOhm @ 26.1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 32A 8DFN
|
封装: 8-PowerSMD, Flat Leads |
库存1,052,868 |
|
MOSFET (Metal Oxide) | 30V | 27A (Ta), 32A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 40nC @ 10V | 1975pF @ 15V | ±20V | Schottky Diode (Body) | 4.1W (Ta), 41W (Tc) | 3.6 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
||
IXYS |
MOSFET N-CH 500V 8A TO220
|
封装: TO-220-3 |
库存6,096 |
|
MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 5V @ 1.5mA | 36nC @ 10V | 1800pF @ 25V | ±30V | - | 380W (Tc) | 300 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 20A 8DFN
|
封装: 8-PowerWDFN |
库存2,704 |
|
MOSFET (Metal Oxide) | 60V | 20A (Ta), 50A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 32nC @ 10V | 2435pF @ 30V | ±20V | - | 6.2W (Ta), 83W (Tc) | 8.5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3.3x3.3) | 8-PowerWDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 8A TO-220SIS
|
封装: TO-220-3 Full Pack, Isolated Tab |
库存6,084 |
|
MOSFET (Metal Oxide) | 600V | 8A (Ta) | 10V | 4.5V @ 400µA | 22nC @ 10V | 590pF @ 300V | ±30V | - | 30W (Tc) | 540 mOhm @ 4A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Rohm Semiconductor |
MOSFET N-CH 600V 8A TO-220FM
|
封装: TO-220-2 Full Pack |
库存16,344 |
|
MOSFET (Metal Oxide) | 600V | 8A (Tc) | 10V | 4V @ 1mA | 20nC @ 10V | 580pF @ 25V | ±30V | - | 50W (Tc) | 950 mOhm @ 4A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-2 Full Pack |
||
STMicroelectronics |
MOSFET N-CH 40V TO-220
|
封装: TO-220-3 |
库存2,000 |
|
MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 4.5V @ 250µA | 377nC @ 10V | 20000pF @ 25V | ±20V | - | 300W (Tc) | 1.7 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Infineon Technologies |
MOSFET P-CH 60V 150MA SOT-323
|
封装: SC-70, SOT-323 |
库存216,012 |
|
MOSFET (Metal Oxide) | 60V | 150mA (Ta) | 4.5V, 10V | 2V @ 20µA | 1.5nC @ 10V | 19.1pF @ 25V | ±20V | - | 300mW (Ta) | 8 Ohm @ 150mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT323-3 | SC-70, SOT-323 |
||
Infineon Technologies |
MOSFET N-CH 30V 27A DIRECTFET MT
|
封装: DirectFET? Isometric MT |
库存33,324 |
|
MOSFET (Metal Oxide) | 30V | 34A (Ta), 192A (Tc) | 4.5V, 10V | 2.35V @ 150µA | 77nC @ 4.5V | 6140pF @ 15V | ±20V | - | 2.8W (Ta), 89W (Tc) | 1.5 mOhm @ 32A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MT | DirectFET? Isometric MT |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 500V 6.5A TO-220F
|
封装: TO-220-3 Full Pack |
库存12,600 |
|
MOSFET (Metal Oxide) | 500V | 6.5A (Tc) | 10V | 5V @ 250µA | 18nC @ 10V | 735pF @ 25V | ±25V | - | 40W (Tc) | 1.2 Ohm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
IXYS |
MOSFET N-CH 300V 140A TO-264
|
封装: TO-264-3, TO-264AA |
库存4,912 |
|
MOSFET (Metal Oxide) | 300V | 140A (Tc) | 10V | 5V @ 8mA | 185nC @ 10V | 14800pF @ 25V | ±20V | - | 1040W (Tc) | 24 mOhm @ 70A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 4A SOT-223-4
|
封装: TO-261-4, TO-261AA |
库存748,524 |
|
MOSFET (Metal Oxide) | 60V | 4A (Ta) | 10V | 4V @ 250µA | 15nC @ 10V | 250pF @ 30V | ±20V | - | 3W (Ta) | 100 mOhm @ 4A, 10V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
||
Rohm Semiconductor |
600V 29A TO-3PF, PRESTOMOS WITH
|
封装: - |
库存1,260 |
|
MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V, 15V | 6.5V @ 1.9mA | 108 nC @ 10 V | 5200 pF @ 100 V | ±30V | - | 113W (Tc) | 51mOhm @ 23A, 15V | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
||
onsemi |
MOSFET N-CH 40V 27A/110A LFPAK4
|
封装: - |
库存9,000 |
|
MOSFET (Metal Oxide) | 40 V | 27A (Ta), 110A (Tc) | 4.5V, 10V | 2V @ 60µA | 35 nC @ 10 V | 2100 pF @ 20 V | ±20V | - | 3.7W (Ta), 68W (Tc) | 2.8mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK4 (5x6) | SOT-1023, 4-LFPAK |
||
onsemi |
MOSFET N-CH
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Rohm Semiconductor |
650V 24A TO-247, LOW-NOISE POWER
|
封装: - |
库存1,425 |
|
MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 4V @ 750µA | 70 nC @ 10 V | 1650 pF @ 25 V | ±20V | - | 245W (Tc) | 185mOhm @ 11.3A, 10V | 150°C (TJ) | Through Hole | TO-247G | TO-247-3 |
||
Vishay Siliconix |
MOSFET N-CH 100V 11.3A/39A PPAK
|
封装: - |
库存57,144 |
|
MOSFET (Metal Oxide) | 100 V | 11.3A (Ta), 39A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 48 nC @ 10 V | 2058 pF @ 50 V | ±20V | - | 4.8W (Ta), 57W (Tc) | 14.9mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | PowerPAK® 1212-8S |
||
onsemi |
MOSFET N-CH 40V 13A/35A 4LFPAK
|
封装: - |
库存8,970 |
|
MOSFET (Metal Oxide) | 40 V | 13A (Ta), 35A (Tc) | 10V | 3.5V @ 20µA | 7.9 nC @ 10 V | 420 pF @ 25 V | ±20V | - | 3.8W (Ta), 28W (Tc) | 12mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK4 (5x6) | SOT-1023, 4-LFPAK |
||
Wolfspeed, Inc. |
SICFET N-CH 650V 37A TO247-3
|
封装: - |
库存2,121 |
|
SiCFET (Silicon Carbide) | 650 V | 37A (Tc) | 15V | 3.6V @ 5mA | 46 nC @ 15 V | 1020 pF @ 600 V | +15V, -4V | - | 150W (Tc) | 79mOhm @ 13.2A, 15V | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Renesas Electronics Corporation |
P-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diodes Incorporated |
2N7002 FAMILY SOT23 T&R 10K
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 206mA (Ta) | 5V, 10V | 2.1V @ 250µA | 0.6 nC @ 5 V | 42 pF @ 30 V | ±20V | - | 500mW (Ta) | 7.5Ohm @ 100mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Wolfspeed, Inc. |
650V 25 M SIC MOSFET
|
封装: - |
库存1,254 |
|
SiCFET (Silicon Carbide) | 650 V | 80A (Tc) | 15V | 3.6V @ 9.22mA | 109 nC @ 15 V | 2980 pF @ 400 V | +19V, -8V | - | 271W (Tc) | 34mOhm @ 33.5A, 15V | -40°C ~ 150°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |