图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 95A TDSON-8
|
封装: 8-PowerTDFN |
库存110,532 |
|
MOSFET (Metal Oxide) | 30V | 20A (Ta), 95A (Tc) | 4.5V, 10V | 2V @ 50µA | 28nC @ 5V | 3660pF @ 15V | ±20V | - | 2.8W (Ta), 62.5W (Tc) | 4.2 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 200V 5A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存24,000 |
|
MOSFET (Metal Oxide) | 200V | 5A (Tc) | 10V | 4V @ 250µA | 23nC @ 10V | 300pF @ 25V | ±20V | - | 43W (Tc) | 600 mOhm @ 2.9A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET P-CH 100V 16.7A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,768 |
|
MOSFET (Metal Oxide) | 100V | 16.7A (Tc) | 6V, 10V | 4V @ 250µA | 60nC @ 10V | 2110pF @ 25V | ±20V | - | 3.75W (Ta), 88.2W (Tc) | 13.8 mOhm @ 6A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 600V 22A TO-247AC
|
封装: TO-247-3 |
库存47,268 |
|
MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 5V @ 250µA | 150nC @ 10V | 3570pF @ 25V | ±30V | - | 370W (Tc) | 280 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Vishay Siliconix |
MOSFET N-CH 90V 0.86A TO-205
|
封装: TO-205AD, TO-39-3 Metal Can |
库存7,456 |
|
MOSFET (Metal Oxide) | 90V | 860mA (Tc) | 5V, 10V | 2V @ 1mA | - | 50pF @ 25V | ±20V | - | 725mW (Ta), 6.25W (Tc) | 4 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AD, TO-39-3 Metal Can |
||
Vishay Siliconix |
MOSFET P-CH 12V 13A PPAK SO-8
|
封装: PowerPAK? SO-8 |
库存7,040 |
|
MOSFET (Metal Oxide) | 12V | 13A (Ta) | 1.8V, 4.5V | 900mV @ 1mA | 140nC @ 5V | - | ±8V | - | 1.8W (Ta) | 6.5 mOhm @ 21A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
IXYS |
MOSFET N-CH 600V 22A PLUS220
|
封装: TO-220-3, Short Tab |
库存6,608 |
|
MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 5.5V @ 4mA | 58nC @ 10V | 3600pF @ 25V | ±30V | - | 400W (Tc) | 350 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS220 | TO-220-3, Short Tab |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 100A TO-3P
|
封装: TO-3P-3, SC-65-3 |
库存103,464 |
|
MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 4V @ 250µA | 112nC @ 10V | 4120pF @ 25V | ±25V | - | 214W (Tc) | 10 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
||
STMicroelectronics |
MOSFET N-CH 30V 60A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存2,000 |
|
MOSFET (Metal Oxide) | 30V | 60A (Tc) | 5V, 10V | 1V @ 250µA | 21nC @ 5V | 2200pF @ 10V | ±20V | - | 858W (Tc) | 9.5 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 20A 8SON
|
封装: 8-PowerTDFN |
库存6,464 |
|
MOSFET (Metal Oxide) | 30V | 20A (Ta), 40A (Tc) | 4.5V, 10V | 2V @ 250µA | 20nC @ 10V | 1300pF @ 15V | ±20V | - | 2.1W (Ta), 36W (Tc) | 3.4 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 30V 16A 8PQFN
|
封装: 8-PowerTDFN |
库存63,732 |
|
MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 2.35V @ 25µA | 20nC @ 10V | 1450pF @ 25V | ±20V | - | 2.7W (Ta), 33W (Tc) | 6.6 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3.3x3.3), Power33 | 8-PowerTDFN |
||
IXYS |
MOSFET N-CH 800V 28A ISOPLUS247
|
封装: ISOPLUS247? |
库存2,224 |
|
MOSFET (Metal Oxide) | 800V | 28A (Tc) | 10V | 4V @ 8mA | 270nC @ 10V | 7500pF @ 25V | ±20V | - | 416W (Tc) | 240 mOhm @ 17A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247? | ISOPLUS247? |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 35A TO-220AB
|
封装: TO-220-3 |
库存5,760 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220 | TO-220-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH
|
封装: 8-PowerSMD, Flat Leads |
库存6,656 |
|
MOSFET (Metal Oxide) | 30V | 32A (Ta), 32A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 42nC @ 10V | 2160pF @ 15V | ±20V | - | 6.2W (Ta), 46W (Tc) | 3.3 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, TRENC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存4,992 |
|
MOSFET (Metal Oxide) | 20V | 28A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 12.3nC @ 4.5V | 961pF @ 15V | ±8V | - | 2W (Ta) | 20 mOhm @ 20A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET N-CHAN 600V 24A POWERPAK
|
封装: 8-PowerTDFN |
库存4,672 |
|
MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 2744pF @ 100V | ±30V | - | 202W (Tc) | 141 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 8 x 8 | 8-PowerTDFN |
||
IXYS |
MOSFET N-CH 1000V 3A TO220AB
|
封装: TO-220-3 |
库存6,240 |
|
MOSFET (Metal Oxide) | 1000V | 3A (Tc) | - | - | 37.5nC @ 5V | 1020pF @ 25V | ±20V | Depletion Mode | 125W (Tc) | 5.5 Ohm @ 1.5A, 0V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 60V 77A DIRECTFET-S2
|
封装: DirectFET? Isometric SB |
库存39,138 |
|
MOSFET (Metal Oxide) | 60V | 5.8A (Ta), 21A (Tc) | 10V | 5V @ 25µA | 11nC @ 10V | 450pF @ 25V | ±20V | - | 2.4W (Ta), 30W (Tc) | 36 mOhm @ 13A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET SB | DirectFET? Isometric SB |
||
Vishay Siliconix |
MOSFET N-CH 500V 8A TO-220AB
|
封装: TO-220-3 |
库存116,568 |
|
MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 4V @ 250µA | 38nC @ 10V | 1018pF @ 25V | ±30V | - | 125W (Tc) | 850 mOhm @ 4.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 80V 120A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存40,374 |
|
MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 4V @ 1mA | 111nC @ 10V | 8161pF @ 40V | ±20V | - | 306W (Tc) | 3.5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 60V 320MA SOT-23-3
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存1,840,404 |
|
MOSFET (Metal Oxide) | 60V | 320mA (Ta) | 4.5V, 10V | 2.3V @ 250µA | 0.7nC @ 4.5V | 24.5pF @ 20V | ±20V | - | 300mW (Tj) | 1.6 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
ON Semiconductor |
MOSFET P-CH 50V 130MA SOT-23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存3,646,668 |
|
MOSFET (Metal Oxide) | 50V | 130mA (Ta) | 5V | 2V @ 250µA | - | 30pF @ 5V | ±20V | - | 225mW (Ta) | 10 Ohm @ 100mA, 5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
MOSFET N-CH 80V 16.7A/59.6A PPAK
|
封装: - |
库存37,662 |
|
MOSFET (Metal Oxide) | 80 V | 16.7A (Ta), 59.6A (Tc) | 7.5V, 10V | 3.8V @ 250µA | 44 nC @ 10 V | 1950 pF @ 40 V | ±20V | - | 5.2W (Ta), 65.7W (Tc) | 7.4mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
Infineon Technologies |
MOSFET N-CH 25V 25A/110A TDSON
|
封装: - |
库存29,688 |
|
MOSFET (Metal Oxide) | 25 V | 25A (Ta), 110A (Tc) | 4.5V, 10V | 2V @ 250µA | 23 nC @ 10 V | 1700 pF @ 12 V | ±20V | - | 2.5W (Ta), 48W (Tc) | 2.4mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 500V 7.6A TO220-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 7.6A (Tc) | 13V | 3.5V @ 200µA | 18.7 nC @ 10 V | 433 pF @ 100 V | ±20V | - | - | 500mOhm @ 2.3A, 13V | - | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
onsemi |
2SK3615 - N-CHANNEL SILICON MOSF
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diodes Incorporated |
MOSFET BVDSS: 61V~100V POWERDI33
|
封装: - |
库存26,634 |
|
MOSFET (Metal Oxide) | 80 V | 17A (Ta), 70A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 37.7 nC @ 10 V | 2254 pF @ 40 V | ±20V | - | 1.2W (Ta), 50W (Tc) | 6.9mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | POWERDI3333-8 | 8-PowerVDFN |
||
Diodes Incorporated |
MOSFET BVDSS: 31V~40V TSOT26 T&R
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 45 V | 4.3A (Ta) | 4.5V, 10V | 3V @ 250µA | 20 nC @ 10 V | 1159 pF @ 25 V | ±20V | - | 1.2W (Ta) | 46mOhm @ 4.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
||
onsemi |
SICFET N-CH 1200V 19.5A D2PAK
|
封装: - |
库存1,506 |
|
SiCFET (Silicon Carbide) | 1200 V | 19.5A (Tc) | 20V | 4.3V @ 2.5mA | 33.8 nC @ 20 V | 678 pF @ 800 V | +25V, -15V | - | 136W (Tc) | 224mOhm @ 12A, 20V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |