图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 20V 110A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,008 |
|
MOSFET (Metal Oxide) | 20V | 110A (Tc) | 4.5V, 7V | 700mV @ 250µA | 110nC @ 4.5V | 4700pF @ 15V | ±10V | - | 140W (Tc) | 7 mOhm @ 64A, 7V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 60V 30A TO-220ML
|
封装: TO-220-3 Full Pack |
库存515,892 |
|
MOSFET (Metal Oxide) | 60V | 30A (Ta) | 4V, 10V | - | 40nC @ 10V | 1780pF @ 20V | ±20V | - | 2W (Ta), 25W (Tc) | 26 mOhm @ 15A, 10V | 150°C (TJ) | Through Hole | TO-220ML | TO-220-3 Full Pack |
||
ON Semiconductor |
MOSFET N-CH 25V 3.8A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存418,092 |
|
MOSFET (Metal Oxide) | 25V | 3.8A (Ta), 17.1A (Tc) | 4V, 5V | 2V @ 250µA | 3.76nC @ 4.5V | 225pF @ 20V | ±20V | - | 1.14W (Ta), 22.3W (Tc) | 45 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET N-CH 30V 8.4A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存26,892 |
|
MOSFET (Metal Oxide) | 30V | 8.4A (Ta), 68A (Tc) | 4.5V, 10V | 3V @ 250µA | 80nC @ 10V | 2400pF @ 24V | ±20V | - | 1.04W (Ta), 75W (Tc) | 10 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET N-CH 60V 500MA SOT-23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存780,864 |
|
MOSFET (Metal Oxide) | 60V | 500mA (Ta) | 10V | 3V @ 1mA | - | 60pF @ 10V | ±20V | - | 225mW (Ta) | 5 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 75V 183A D2PAK
|
封装: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
库存6,464 |
|
MOSFET (Metal Oxide) | 75V | 197A (Tc) | 6V, 10V | 3.7V @ 150µA | 270nC @ 10V | 10130pF @ 25V | ±20V | - | 294W (Tc) | 3.05 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
||
Vishay Siliconix |
MOSFET N-CH 60V 17A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,680 |
|
MOSFET (Metal Oxide) | 60V | 17A (Tc) | 10V | 4V @ 250µA | 25nC @ 10V | 640pF @ 25V | ±20V | - | 3.7W (Ta), 60W (Tc) | 100 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 100V 180A TO247
|
封装: TO-247-3 |
库存3,936 |
|
MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 4.5V @ 250µA | 160nC @ 10V | 11550pF @ 25V | ±20V | - | 300W (Tc) | 3 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
IXYS |
MOSFET N-CH 1000V 32A TO-264
|
封装: TO-264-3, TO-264AA |
库存2,992 |
|
MOSFET (Metal Oxide) | 1000V | 32A (Tc) | 10V | 6.5V @ 8mA | 195nC @ 10V | 9940pF @ 25V | ±30V | - | 1250W (Tc) | 320 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 61.8A TO-247
|
封装: TO-247-3 |
库存6,656 |
|
MOSFET (Metal Oxide) | 600V | 61.8A (Ta) | 10V | 3.7V @ 3.1mA | 180nC @ 10V | 6500pF @ 300V | ±30V | Super Junction | 400W (Tc) | 40 mOhm @ 30.9A, 10V | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 100V 26A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存4,160 |
|
MOSFET (Metal Oxide) | 100V | 26A (Tc) | 4.5V, 10V | 2V @ 1mA | - | 1924pF @ 25V | ±10V | - | 106W (Tc) | 58 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N CH 650V 9A TO-220
|
封装: TO-220-3 |
库存18,540 |
|
MOSFET (Metal Oxide) | 650V | 9A (Tc) | 10V | 5V @ 250µA | 17nC @ 10V | 644pF @ 100V | ±25V | - | 85W (Tc) | 480 mOhm @ 4.5A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 25V 25A 8-SO
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存69,600 |
|
MOSFET (Metal Oxide) | 25V | 25A (Ta) | 4.5V, 10V | 2.35V @ 100µA | 53nC @ 4.5V | 5305pF @ 13V | ±20V | - | 2.5W (Ta) | 2.7 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 100V 9.7A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存14,856 |
|
MOSFET (Metal Oxide) | 100V | 9.7A (Tc) | 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | ±20V | - | 3.8W (Ta), 48W (Tc) | 200 mOhm @ 5.7A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 30V 80A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存185,040 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 29nC @ 4.5V | 3700pF @ 25V | ±20V | - | 110W (Tc) | 2.8 mOhm @ 40A, 10V | 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 4.5V, 10V | 2.5V @ 700µA | 71 nC @ 10 V | 5000 pF @ 30 V | ±20V | - | 42W (Tc) | 3.3mOhm @ 40A, 10V | 175°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
onsemi |
NCH 4V DRIVE SERIES
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Rohm Semiconductor |
MOSFET N-CH 30V 4.5A TSMT6
|
封装: - |
库存8,793 |
|
MOSFET (Metal Oxide) | 30 V | 4.5A (Ta) | 2.5V, 4.5V | 1.5V @ 1mA | 10.7 nC @ 4.5 V | 540 pF @ 10 V | ±12V | - | 950mW (Ta) | 43mOhm @ 4.5A, 4.5V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
||
Micro Commercial Co |
MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 50 V | 250mA | 4.5V, 10V | 1.5V @ 1mA | 1.65 nC @ 10 V | 60 pF @ 25 V | ±20V | - | 250mW | 2.5Ohm @ 300mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
||
Diodes Incorporated |
MOSFET BVDSS: 41V~60V POWERDI506
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 225A (Tc) | 10V | 4V @ 250µA | 130.6 nC @ 10 V | 8306 pF @ 30 V | ±20V | - | 3.2W (Ta), 167W (Tc) | 1.5mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 (SWP) | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 30V 14A 8SO
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 14A (Ta) | 4.5V, 10V | 2.35V @ 25µA | 12 nC @ 4.5 V | 1020 pF @ 15 V | ±20V | - | 2.5W (Ta) | 8.7mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 60V 11A/40A TSDSON
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 11A (Ta), 40A (Tc) | 4.5V, 10V | 2.3V @ 14µA | 8.6 nC @ 4.5 V | 1300 pF @ 30 V | ±20V | - | 2.1W (Ta), 36W (Tc) | 9.9mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
||
Taiwan Semiconductor Corporation |
30V, 80A, SINGLE N-CHANNEL POWER
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 11.1 nC @ 4.5 V | 1160 pF @ 25 V | ±20V | - | 74W (Tc) | 5.5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x5.8) | 8-PowerTDFN |
||
onsemi |
MOSFET N-CH 60V 7A/27A 8WDFN
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 7A (Ta), 27A (Tc) | 10V | 4V @ 20µA | 5.8 nC @ 10 V | 355 pF @ 30 V | ±20V | - | 2.5W (Ta), 31W (Tc) | 20.3mOhm @ 4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
||
Harris Corporation |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 400 V | 2.6A (Ta) | 10V | 4V @ 250µA | 20 nC @ 10 V | 350 pF @ 25 V | ±20V | - | 50W (Tc) | 2.5Ohm @ 1.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | IPAK | TO-251-3 Short Leads, IPAK, TO-251AA |
||
Vishay Siliconix |
N-CHANNEL 80 V (D-S) MOSFET POWE
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 80 V | 18.8A (Ta), 66.8A (Tc) | 7.5V, 10V | 4V @ 250µA | 24 nC @ 10 V | 1210 pF @ 40 V | ±30V | - | 5.2W (Ta), 65.7W (Tc) | 157mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
||
Nexperia USA Inc. |
BUK9Y1R6-40H/SOT669/LFPAK
|
封装: - |
Request a Quote |
|
- | - | 120A (Tj) | - | - | - | - | +16V, -10V | - | - | - | - | - | - | - |
||
Toshiba Semiconductor and Storage |
AUTO AEC-Q LOW RDSON SS MOS N-CH
|
封装: - |
库存16,320 |
|
MOSFET (Metal Oxide) | 60 V | 300mA (Ta) | 4.5V, 10V | 2.1V @ 250µA | 0.6 nC @ 4.5 V | 40 pF @ 10 V | ±20V | - | 150mW (Ta) | 1.5Ohm @ 100mA, 10V | 150°C | Surface Mount | SSM | SC-75, SOT-416 |
||
Rohm Semiconductor |
MOSFET N-CH 45V 3A TSMT3
|
封装: - |
库存26,508 |
|
MOSFET (Metal Oxide) | 45 V | 3A (Ta) | 2.5V, 4.5V | 1.5V @ 1mA | 6.2 nC @ 4.5 V | 510 pF @ 10 V | ±12V | - | 700mW (Ta) | 67mOhm @ 3A, 4.5V | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
||
Goford Semiconductor |
P-30V,RD(MAX)<9.5M@-10V,RD(MAX)<
|
封装: - |
库存5,928 |
|
MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 30 nC @ 10 V | - | ±20V | - | 138W (Tc) | 9.5mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |