晶体管 - FET，MOSFET - 单

IRFIZ24EPBF

Infineon Technologies

MOSFET N-CH 60V 14A TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 29W (Tc)
• Rds On (Max) @ Id, Vgs: 71 mOhm @ 7.8A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB Full-Pak
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

AO4304_001

Alpha & Omega Semiconductor Inc.

MOSFET N CH 30V 18A 8SOIC

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

SI1470DH-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 5.1A SC-70-6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
• Rds On (Max) @ Id, Vgs: 66 mOhm @ 3.8A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-70-6 (SOT-363)
• Package / Case: 6-TSSOP, SC-88, SOT-363

封装: 6-TSSOP, SC-88, SOT-363

SSM5H12TU(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 1.9A UFV

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4V
• Input Capacitance (Ciss) (Max) @ Vds: 123pF @ 15V
• Vgs (Max): ±12V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 133 mOhm @ 1A, 4V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: UFV
• Package / Case: 6-SMD (5 Leads), Flat Lead

封装: 6-SMD (5 Leads), Flat Lead

FQP10N20

Fairchild/ON Semiconductor

MOSFET N-CH 200V 10A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 87W (Tc)
• Rds On (Max) @ Id, Vgs: 360 mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3

封装: TO-220-3

2N7002TA

Diodes Incorporated

MOSFET N-CH 60V 115MA SOT23-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 330mW (Ta)
• Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

IPP80P04P4L04AKSA1

Infineon Technologies

MOSFET P-CH TO220-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 176nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V
• Vgs (Max): +5V, -16V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

封装: TO-220-3

IXFA16N60P3

IXYS

MOSFET N-CH 600V 16A TO-263AA

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1.5mA
• Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 347W (Tc)
• Rds On (Max) @ Id, Vgs: 440 mOhm @ 8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (IXFA)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AOK8N80L

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 800V 7.4A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 245W (Tc)
• Rds On (Max) @ Id, Vgs: 1.63 Ohm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

封装: TO-247-3

TSM70N600CH C5G

TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, SUPER

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 700V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 743pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 600 mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-251 (IPAK)
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封装: TO-251-3 Short Leads, IPak, TO-251AA

STP6NK60Z

STMicroelectronics

MOSFET N-CH 600V 6A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 905pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 110W (Tc)
• Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

封装: TO-220-3

STB21NM50N-1

STMicroelectronics

MOSFET N-CH 500V 18A I2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 140W (Tc)
• Rds On (Max) @ Id, Vgs: 190 mOhm @ 9A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I2PAK
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

SIHP8N50D-GE3

Vishay Siliconix

MOSFET N-CH 500V 8.7A TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 527pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 156W (Tc)
• Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

封装: TO-220-3

FDPF17N60NT

Fairchild/ON Semiconductor

MOSFET N-CH 600V TO-220F-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3040pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 62.5W (Tc)
• Rds On (Max) @ Id, Vgs: 340 mOhm @ 8.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

BSO301SP H

Infineon Technologies

MOSFET P-CH 30V 12.6A 8DSO

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5890pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.79W (Ta)
• Rds On (Max) @ Id, Vgs: 8 mOhm @ 14.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-DSO-8
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

BUK96180-100A,118

Nexperia USA Inc.

MOSFET N-CH 100V 11A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 619pF @ 25V
• Vgs (Max): ±15V
• FET Feature: -
• Power Dissipation (Max): 54W (Tc)
• Rds On (Max) @ Id, Vgs: 173 mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FQB30N06LTM

Fairchild/ON Semiconductor

MOSFET N-CH 60V 32A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.75W (Ta), 79W (Tc)
• Rds On (Max) @ Id, Vgs: 35 mOhm @ 16A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (TO-263AB)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SI2318CDS-T1-GE3

Vishay Siliconix

MOSFET N-CH 40V 5.6A SOT-23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
• Rds On (Max) @ Id, Vgs: 42 mOhm @ 4.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3 (TO-236)
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

AOD450A70

Alpha & Omega Semiconductor Inc.

N

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 700 V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1115 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252 (DPAK)
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

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AON6260L

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 8DFN

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

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RJK0358DPA-01-J0

Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

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BSZ105N04NSGATMA1

Infineon Technologies

MOSFET N-CH 40V 11A/40A 8TSDSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 14µA
• Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
• Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TSDSON-8
• Package / Case: 8-PowerTDFN

封装: -

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IXFK120N60X3

IXYS

DISCRETE MOSFET 120A 600V X3 TO2

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

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DMN67D8LV-7

Diodes Incorporated

MOSFET BVDSS: 41V 60V SOT563 T&R

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

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TSM4NC50CP

Taiwan Semiconductor Corporation

500V, 4A, SINGLE N-CHANNEL POWER

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500 V
• Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 2.7Ohm @ 1.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252 (DPAK)
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

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FDV303N-F169

onsemi

MOSFET N-CH 25V 680MA SOT23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25 V
• Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
• Vgs (Max): 8V
• FET Feature: -
• Power Dissipation (Max): 350mW (Ta)
• Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: -

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DMP2225LQ-7

Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT23 T&R 3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.08W
• Rds On (Max) @ Id, Vgs: 110mOhm @ 2.6A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: -

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SQJA64EP-T1_GE3

Vishay Siliconix

MOSFET N-CH 60V 15A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 45W (Tc)
• Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK® SO-8
• Package / Case: PowerPAK® SO-8

封装: -

NVTFS016N06CTAG

onsemi

MOSFET N-CH 60V 8A/32A 8WDFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 32A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
• Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-WDFN (3.3x3.3)
• Package / Case: 8-PowerWDFN

封装: -

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SST210-SOT-143-4L-ROHS

Linear Integrated Systems, Inc.

HIGH SPEED N-CHANNEL LATERAL DMO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 25V
• Vgs(th) (Max) @ Id: 1.5V @ 1µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±40V
• FET Feature: -
• Power Dissipation (Max): 300mW (Ta)
• Rds On (Max) @ Id, Vgs: 50Ohm @ 1mA, 10V
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-143-4
• Package / Case: TO-253-4, TO-253AA

封装: -