图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 20V 100A I-PAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存2,912 |
|
MOSFET (Metal Oxide) | 20V | 100A (Tc) | 4.5V, 10V | 3V @ 250µA | 44nC @ 4.5V | 2980pF @ 10V | ±20V | - | 2.5W (Ta), 120W (Tc) | 6.5 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 55V 58A TO220FP
|
封装: TO-220-3 Full Pack |
库存87,912 |
|
MOSFET (Metal Oxide) | 55V | 58A (Tc) | 4V, 10V | 2V @ 250µA | 130nC @ 5V | 5000pF @ 25V | ±16V | - | 63W (Tc) | 8 mOhm @ 31A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH TO-263
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,624 |
|
MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 5V @ 250µA | 74nC @ 10V | 3440pF @ 100V | ±30V | - | 463W (Tc) | 250 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8
|
封装: PowerPAK? SO-8 |
库存3,280 |
|
MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 1.8V @ 250µA | 125nC @ 10V | 7770pF @ 15V | ±12V | - | 5.4W (Ta), 83W (Tc) | 3.1 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
ON Semiconductor |
MOSFET N-CH 30V 11A SO8FL
|
封装: 8-PowerTDFN, 5 Leads |
库存175,872 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 50nC @ 4.5V | 3600pF @ 24V | ±20V | - | 900mW (Ta) | 4.5 mOhm @ 26A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
NXP |
MOSFET N-CH 40V 75A TO220AB
|
封装: TO-220-3 |
库存3,104 |
|
MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 4V @ 1mA | 69nC @ 10V | 4824pF @ 25V | ±20V | - | 254W (Tc) | 4.3 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 300V 2.4A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存7,440 |
|
MOSFET (Metal Oxide) | 300V | 2.4A (Tc) | 10V | 5V @ 250µA | 7nC @ 10V | 230pF @ 25V | ±30V | - | 2.5W (Ta), 30W (Tc) | 2.2 Ohm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET N-CH 240V 0.16A TO92-3
|
封装: E-Line-3 |
库存22,404 |
|
MOSFET (Metal Oxide) | 240V | 160mA (Ta) | 10V | 3V @ 1mA | - | 85pF @ 25V | ±20V | - | 700mW (Ta) | 16 Ohm @ 250mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
||
ON Semiconductor |
MOSFET N-CH 60V 15A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存3,168 |
|
MOSFET (Metal Oxide) | 60V | 15A (Ta) | 10V | 4V @ 250µA | 20nC @ 10V | 450pF @ 25V | ±20V | - | 1.5W (Ta), 48W (Tj) | 90 mOhm @ 7.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 560V 16A TO-263
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存390,000 |
|
MOSFET (Metal Oxide) | 560V | 16A (Tc) | 10V | 3.9V @ 675µA | 66nC @ 10V | 1600pF @ 25V | ±20V | - | 160W (Tc) | 280 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH 600V 18A TO-247
|
封装: TO-247-3 |
库存103,464 |
|
MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 5.5V @ 2.5mA | 50nC @ 10V | 2500pF @ 25V | ±30V | - | 360W (Tc) | 400 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
||
ON Semiconductor |
MOSFET N-CH 30V SO8FL
|
封装: 8-PowerTDFN, 5 Leads |
库存2,160 |
|
MOSFET (Metal Oxide) | 30V | 16.4A (Ta), 52A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 22.2nC @ 10V | 1252pF @ 15V | ±20V | - | 2.51W (Ta), 25.5W (Tc) | 4.73 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Vishay Siliconix |
MOSFET P-CH 12V 12A SC-70-6L
|
封装: PowerPAK? SC-70-6 |
库存5,184 |
|
MOSFET (Metal Oxide) | 12V | 12A (Tc) | - | 1V @ 250µA | 87nC @ 8V | 2970pF @ 6V | - | - | - | 14 mOhm @ 7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Single | PowerPAK? SC-70-6 |
||
Infineon Technologies |
MOSFET N-CH 30V 50A TO252-3
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存6,944 |
|
MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2V @ 85µA | 68nC @ 10V | 1900pF @ 25V | ±20V | - | 136W (Tc) | 6.4 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Rohm Semiconductor |
1700V .75 OHM 6A SIC FET
|
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存2,624 |
|
MOSFET (Metal Oxide) | 1700V | 5.9A (Tc) | 18V | 4V @ 630µA | 17nC @ 18V | 275pF @ 800V | +22V, -6V | - | 57W (Tc) | 975 mOhm @ 1.7A, 18V | 175°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
Vishay Siliconix |
MOSFET N-CH 600V 33A TO-220-3
|
封装: TO-220-3 |
库存15,120 |
|
MOSFET (Metal Oxide) | 600V | 33A (Tc) | 10V | 4V @ 250µA | 155nC @ 10V | 3454pF @ 100V | ±30V | - | 278W (Tc) | 98 mOhm @ 16.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
PP IHM I
|
封装: - |
库存6 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Alpha & Omega Semiconductor Inc. |
N
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 16A (Ta), 34A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 50 nC @ 10 V | 2305 pF @ 50 V | ±20V | - | 16W (Ta), 56.5W (Tc) | 11.6mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
||
Infineon Technologies |
MOSFET N-CH 800V 1.9A SOT223
|
封装: - |
库存40,086 |
|
MOSFET (Metal Oxide) | 800 V | 1.9A (Tc) | 10V | 3.5V @ 30µA | 5.8 nC @ 10 V | 120 pF @ 500 V | ±20V | - | 6.1W (Tc) | 3.3Ohm @ 590mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-4, TO-261AA |
||
Microchip Technology |
MOSFET N-CH 500V 77A ISOTOP
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 77A (Tc) | - | 4V @ 5mA | 1000 nC @ 10 V | 19600 pF @ 25 V | - | - | - | 50mOhm @ 500mA, 10V | - | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
||
onsemi |
MOSFET P-CH 60V SOT-23
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 120mA (Ta) | 4.5V, 10V | 3.5V @ 1mA | 2.5 nC @ 10 V | 79 pF @ 25 V | ±20V | - | 360mW (Ta) | 10Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
TRENCH >=100V
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 104A (Tc) | 10V | 5V @ 250µA | 120 nC @ 10 V | 5270 pF @ 50 V | ±20V | - | 380W (Tc) | 11mOhm @ 62A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
IXYS |
MOSFET N-CH 1000V 3A TO263
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 1000 V | 3A (Tc) | 10V | 4.5V @ 250µA | 36 nC @ 10 V | 1100 pF @ 25 V | ±20V | - | 125W (Tc) | 4.8Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Wolfspeed, Inc. |
SIC, MOSFET, 16M, 1200V, TO-247-
|
封装: - |
库存1,218 |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 125A (Tc) | 15V | 3.6V @ 22.08mA | 223 nC @ 15 V | 6922 pF @ 1000 V | +19V, -8V | - | 483W (Tc) | 22mOhm @ 80.28A, 15V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
||
IXYS |
MOSFET 46A 650V X3 TO247
|
封装: - |
库存1,056 |
|
MOSFET (Metal Oxide) | 650 V | 46A (Tc) | 10V | 5.2V @ 2.5mA | 40 nC @ 10 V | 2730 pF @ 25 V | ±20V | - | 520W (Tc) | 73mOhm @ 23A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXFH) | TO-247-3 |
||
Fairchild Semiconductor |
NDP4050 - 15A, 50V, 0.1OHM, N-CH
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 50 V | 15A (Tc) | - | 4V @ 250µA | 17 nC @ 10 V | 450 pF @ 25 V | - | - | - | 100mOhm @ 7.5A, 10V | - | Through Hole | TO-220-3 | TO-220-3 |
||
Goford Semiconductor |
MOSFET P-CH 30V 85A TO-220
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | - | 85A (Tc) | 4.5V, 10V | 2.5V @ 250µA | - | - | ±20V | - | 100W (Tc) | 5mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
EPC |
TRANS GAN 100V .0042 OHM 6LGA
|
封装: - |
库存9,858 |
|
GaNFET (Gallium Nitride) | 100 V | 29A (Ta) | 5V | 2.5V @ 5.5mA | 8.3 nC @ 5 V | 1180 pF @ 50 V | +6V, -4V | - | - | 3.3mOhm @ 16A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
||
IXYS |
IXFP14N55X2M
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Toshiba Semiconductor and Storage |
650V DTMOS VI TO-220 190MOHM
|
封装: - |
库存363 |
|
MOSFET (Metal Oxide) | 650 V | 15A (Ta) | 10V | 4V @ 610µA | 25 nC @ 10 V | 1370 pF @ 300 V | ±30V | - | 130W (Tc) | 190mOhm @ 7.5A, 10V | 150°C | Through Hole | TO-220 | TO-220-3 |