图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 100V 35A I2PAK
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存3,792 |
|
MOSFET (Metal Oxide) | 100V | 35A (Tc) | 10V | 4V @ 83µA | 65nC @ 10V | 1570pF @ 25V | ±20V | - | 150W (Tc) | 44 mOhm @ 26.4A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 55V 89A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,392 |
|
MOSFET (Metal Oxide) | 55V | 89A (Tc) | 4V, 10V | 2V @ 250µA | 98nC @ 5V | 3600pF @ 25V | ±16V | - | 3.8W (Ta), 170W (Tc) | 10 mOhm @ 46A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 60V 60A TO220AB
|
封装: TO-220-3 |
库存63,516 |
|
MOSFET (Metal Oxide) | 60V | 60A (Tc) | 10V | 4.5V @ 250µA | 55nC @ 10V | 1970pF @ 30V | ±20V | - | 3.25W (Ta), 100W (Tc) | 12 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
IXYS |
MOSFET N-CH 75V 160A ISOPLUS220
|
封装: ISOPLUS220? |
库存2,496 |
|
MOSFET (Metal Oxide) | 75V | 160A (Tc) | 10V | 4V @ 2mA | 250nC @ 10V | - | ±20V | - | 300W (Tc) | 6.5 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | ISOPLUS220? | ISOPLUS220? |
||
IXYS |
MOSFET N-CH 100V 320A SOT-227B
|
封装: SOT-227-4, miniBLOC |
库存3,168 |
|
MOSFET (Metal Oxide) | 100V | 320A | 10V | 4.5V @ 1mA | - | - | ±20V | - | 680W (Tc) | - | - | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
ON Semiconductor |
MOSFET N-CH 100V 123A TO-264
|
封装: TO-264-3, TO-264AA |
库存10,476 |
|
MOSFET (Metal Oxide) | 100V | 123A (Tc) | 10V | 4V @ 250µA | 350nC @ 10V | 10110pF @ 25V | ±20V | - | 313W (Tc) | 10 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |
||
IXYS |
MOSFET N-CH 500V 62A SOT-227
|
封装: SOT-227-4, miniBLOC |
库存5,776 |
|
MOSFET (Metal Oxide) | 500V | 62A | 20V | 5V @ 250µA | 550nC @ 20V | 11500pF @ 25V | ±30V | - | 800W (Tc) | 100 mOhm @ 500mA, 20V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
Fairchild/ON Semiconductor |
P-CHANNEL LOGIC LEVEL POWERTRENC
|
封装: - |
库存2,144 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
MOSFET N-CH 60V 7.7A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存24,516 |
|
MOSFET (Metal Oxide) | 60V | 7.7A (Tc) | 10V | 4V @ 250µA | 11nC @ 10V | 300pF @ 25V | ±20V | - | 2.5W (Ta), 25W (Tc) | 200 mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 25V 16.2A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存60,000 |
|
MOSFET (Metal Oxide) | 25V | 16.2A (Tc) | 4.5V, 10V | 2.6V @ 250µA | 42nC @ 10V | 1654pF @ 15V | ±16V | - | 2.5W (Ta), 5W (Tc) | 10.5 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Rohm Semiconductor |
MOSFET P-CH 20V 2.4A TSST8
|
封装: 8-SMD, Flat Lead |
库存4,912 |
|
MOSFET (Metal Oxide) | 20V | 2.4A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 6.7nC @ 4.5V | 850pF @ 10V | ±10V | Schottky Diode (Isolated) | 1.25W (Ta) | 105 mOhm @ 2.4A, 4.5V | 150°C (TJ) | Surface Mount | 8-TSST | 8-SMD, Flat Lead |
||
IXYS |
MOSFET N-CH 250V 170A TO268HV
|
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存3,904 |
|
MOSFET (Metal Oxide) | 250V | 170A (Tc) | 10V | 4.5V @ 4mA | 190nC @ 10V | 13500pF @ 25V | ±20V | - | 960W (Tc) | 7.4 mOhm @ 85A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268HV | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
||
Infineon Technologies |
MOSFET N-CH 100V 57A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存174,012 |
|
MOSFET (Metal Oxide) | 100V | 57A (Tc) | 10V | 4V @ 250µA | 130nC @ 10V | 3130pF @ 25V | ±20V | - | 200W (Tc) | 23 mOhm @ 28A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Microchip Technology |
MOSFET N-CH 400V 0.22A TO92-3
|
封装: TO-226-3, TO-92-3 (TO-226AA) |
库存20,292 |
|
MOSFET (Metal Oxide) | 400V | 220mA (Tj) | 4.5V, 10V | 2V @ 2mA | - | 225pF @ 25V | ±20V | - | 740mW (Ta) | 5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
Infineon Technologies |
MOSFET N-CH 40V 90A TO252-3-313
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存3,344 |
|
MOSFET (Metal Oxide) | 40V | 90A (Tc) | 4.5V, 10V | 2.2V @ 35µA | 60nC @ 10V | 4690pF @ 25V | +20V, -16V | - | 71W (Tc) | 3.8 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET P-CH 200V 6.5A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,136 |
|
MOSFET (Metal Oxide) | 200V | 6.5A (Tc) | 10V | 4V @ 250µA | 29nC @ 10V | 700pF @ 25V | ±20V | - | 3W (Ta), 74W (Tc) | 800 mOhm @ 3.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Texas Instruments |
MOSFET N-CH 30V 100A 8SON
|
封装: 8-PowerTDFN |
库存22,104 |
|
MOSFET (Metal Oxide) | 30V | 24A (Ta), 100A (Tc) | 4.5V, 10V | 1.8V @ 250µA | 13nC @ 4.5V | 1980pF @ 15V | ±20V | - | 3.2W (Ta) | 3.5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (5x6) | 8-PowerTDFN |
||
Texas Instruments |
MOSFET N-CH 30V 35A 8VSON
|
封装: 8-PowerVDFN |
库存12,012 |
|
MOSFET (Metal Oxide) | 30V | 20A (Ta) | 4.5V, 10V | 1.9V @ 250µA | 22.2nC @ 10V | 1590pF @ 15V | ±20V | - | 3.2W (Ta), 37W (Tc) | 7.3 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (3x3.15) | 8-PowerVDFN |
||
Microchip Technology |
MOSFET P-CH 60V 640MA TO92-3
|
封装: TO-226-3, TO-92-3 (TO-226AA) |
库存15,036 |
|
MOSFET (Metal Oxide) | 60V | 640mA (Tj) | 5V, 10V | 3.5V @ 10mA | - | 450pF @ 25V | ±20V | - | 740mW (Tc) | 900 mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
MOSLEADER |
P-Channel -20V -4.7A SOT-23
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
MOSFET P-CH 30V 10A TO252-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 10A (Tc) | - | 2V @ 250µA | 30 nC @ 10 V | 1035 pF @ 25 V | - | - | - | 200mOhm @ 10A, 5V | - | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Nexperia USA Inc. |
PMX400UPE/SOT8013/DFN0603-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 900mA (Ta) | 1.8V, 4.5V | 0.95V @ 250µA | 2.3 nC @ 4.5 V | 127 pF @ 10 V | ±8V | - | 300mW (Ta), 4.7W (Tc) | 500mOhm @ 1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | DFN0603-3 (SOT8013) | 0201 (0603 Metric) |
||
Sanyo |
MOSFET P-CH
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diodes Incorporated |
MOSFET BVDSS: 8V~24V SOT23 T&R 3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 6.8A (Ta) | 1.8V, 4.5V | 900mV @ 250µA | 6.5 nC @ 4.5 V | 647 pF @ 10 V | ±10V | - | 800mW | 25mOhm @ 6.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Diodes Incorporated |
MOSFET BVDSS: 25V~30V POWERDI333
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 60A (Tc) | 4.5V, 10V | 3V @ 250µA | 42 nC @ 10 V | 2000 pF @ 15 V | ±20V | - | 1W (Ta) | 5.5mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN |
||
onsemi |
MOSFET N-CH 650V 24A TO220-3
|
封装: - |
库存2,250 |
|
MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 4.5V @ 2.4mA | 46 nC @ 10 V | 1940 pF @ 400 V | ±30V | - | 181W (Tc) | 125mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Vishay Siliconix |
MOSFET P-CH 30V 10.6A/12A PPAK
|
封装: - |
库存12,807 |
|
MOSFET (Metal Oxide) | 30 V | 10.6A (Ta), 12A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 26 nC @ 10 V | 950 pF @ 15 V | +16V, -20V | - | 3.4W (Ta), 17.9W (Tc) | 20mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 |
||
IXYS |
MOSFET N-CH 200V 42A TO204AE
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 200 V | 42A (Tc) | 10V | 4V @ 4mA | 220 nC @ 10 V | 4400 pF @ 25 V | ±20V | - | 300W (Tc) | 60mOhm @ 21A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-204AE | TO-204AE |
||
Vishay Siliconix |
AUTOMOTIVE P-CHANNEL 20 V (D-S)
|
封装: - |
库存17,670 |
|
MOSFET (Metal Oxide) | 20 V | 9A (Tc) | 2.5V, 4.5V | 1.3V @ 250µA | 24 nC @ 4.5 V | 2100 pF @ 10 V | ±12V | - | 13.6W (Tc) | 25mOhm @ 4.5A, 4.5V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerPAK®SC-70W-6 | PowerPAK® SC-70-6 |