图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 19A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存5,952 |
|
MOSFET (Metal Oxide) | 30V | 19A (Ta) | 4.5V, 10V | 2.25V @ 250µA | 44nC @ 4.5V | 3710pF @ 15V | ±20V | - | 2.5W (Ta) | 4.5 mOhm @ 19A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 560V 21A TO-220AB
|
封装: TO-220-3 |
库存7,488 |
|
MOSFET (Metal Oxide) | 560V | 21A (Tc) | 10V | 3.9V @ 1mA | 95nC @ 10V | 2400pF @ 25V | ±20V | - | 208W (Tc) | 190 mOhm @ 13.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Global Power Technologies Group |
MOSFET N-CH 900V 2.5A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存2,368 |
|
MOSFET (Metal Oxide) | 900V | 2.5A (Tc) | 10V | 4V @ 250µA | 17nC @ 10V | 748pF @ 25V | ±30V | - | 94W (Tc) | 5.1 Ohm @ 1.25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET P-CH 30V 80A TO262-3
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存4,752 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 2V @ 130µA | 80nC @ 10V | 5700pF @ 25V | +5V, -16V | - | 88W (Tc) | 7.2 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 150V 152A TO262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存3,328 |
|
MOSFET (Metal Oxide) | 150V | 11.5A (Ta), 152A (Tc) | 6V, 10V | 3.5V @ 250µA | 136nC @ 10V | 6460pF @ 75V | ±20V | - | 2.1W (Ta), 375W (Tc) | 6.2 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Diodes Incorporated |
MOSFET N-CH 30V 16A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存15,600 |
|
MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 2V @ 250µA | 43.7nC @ 10V | 2096pF @ 15V | ±20V | - | 2.5W (Ta) | 9 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
STMicroelectronics |
MOSFET N-CH 600V 16A TO-220
|
封装: TO-220-3 |
库存39,972 |
|
MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 4V @ 100µA | 44nC @ 10V | 1300pF @ 50V | ±30V | - | 125W (Tc) | 220 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
ON Semiconductor |
MOSFET N-CH 30V 1.5A SOT-23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存2,923,644 |
|
MOSFET (Metal Oxide) | 30V | 1.5A (Ta) | 4.5V, 10V | 3V @ 250µA | 7nC @ 10V | 250pF @ 24V | ±20V | - | 420mW (Ta) | 110 mOhm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
MOSFET N-CHAN 650V 23A POWERPAK
|
封装: 8-PowerTDFN |
库存7,008 |
|
MOSFET (Metal Oxide) | 650V | 23A (Tc) | 10V | 4V @ 250µA | 17nC @ 10V | 2780pF @ 100V | ±30V | - | 202W (Tc) | 158 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 8 x 8 | 8-PowerTDFN |
||
STMicroelectronics |
MOSFET N-CH 500V 7.2A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存831,000 |
|
MOSFET (Metal Oxide) | 500V | 7.2A (Tc) | 10V | 4.5V @ 100µA | 32nC @ 10V | 910pF @ 25V | ±30V | - | 110W (Tc) | 850 mOhm @ 3.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Texas Instruments |
MOSFET P-CH 20V 1.7A PICOSTAR
|
封装: 3-XFDFN |
库存42,792 |
|
MOSFET (Metal Oxide) | 20V | 1.7A (Ta) | 1.8V, 8V | 1.2V @ 250µA | 0.91nC @ 4.5V | 155pF @ 10V | -12V | - | 500mW (Ta) | 132 mOhm @ 400mA, 8V | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN |
||
Diodes Incorporated |
MOSFET N-CH 100V 9.4A
|
封装: 8-PowerTDFN |
库存7,760 |
|
MOSFET (Metal Oxide) | 100V | 9.4A (Ta), 98A (Tc) | 4.5V, 10V | 3.5V @ 250µA | 71nC @ 10V | 3000pF @ 50V | ±20V | - | 1.2W (Ta), 139W (Tc) | 9.5 mOhm @ 13A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
||
Microchip Technology |
MOSFET N-CH 25V 8PDFN
|
封装: 8-PowerTDFN |
库存5,840 |
|
MOSFET (Metal Oxide) | 25V | 60A (Tc) | 4.5V, 10V | 1.7V @ 250µA | 14nC @ 4.5V | 890pF @ 12.5V | +10V, -8V | - | 1.8W (Ta) | 6 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (3x3) | 8-PowerTDFN |
||
STMicroelectronics |
MOSFET N-CH 800V 3A TO220FP
|
封装: TO-220-3 Full Pack |
库存23,346 |
|
MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 5V @ 100µA | 3.7nC @ 10V | 122pF @ 100V | ±30V | - | 20W (Tc) | 2.6 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 100V 10A TO-220AB
|
封装: TO-220-3 |
库存5,216 |
|
MOSFET (Metal Oxide) | 100V | 10A (Tc) | 4V, 10V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | ±16V | - | 48W (Tc) | 180 mOhm @ 6A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Diodes Incorporated |
MOSFET P-CH 30V 8.6A POWERDI
|
封装: 8-PowerWDFN |
库存22,428 |
|
MOSFET (Metal Oxide) | 30V | 8.6A (Ta) | 4.5V, 10V | 2.1V @ 250µA | 47nC @ 10V | 2230pF @ 15V | ±20V | - | 900mW (Ta) | 17 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
||
NTE Electronics, Inc |
MOSFET N-CHANNEL 500V 10A TO3P
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 10A (Tc) | 10V | 4V @ 1mA | - | - | ±20V | - | 125W (Tc) | 670mOhm @ 5A, 10V | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
Rohm Semiconductor |
MOSFET N-CH 30V 6.5A TUMT6
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 6.5A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 16.3 nC @ 10 V | 680 pF @ 15 V | ±20V | - | 910mW (Ta) | 15.3mOhm @ 6.5A, 10V | 150°C (TJ) | Surface Mount | TUMT6 | 6-SMD, Flat Leads |
||
MOSLEADER |
N 30V 3A SOT-23
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
STMicroelectronics |
MOSFET N-CH 600V 15A PWRFLAT HV
|
封装: - |
库存5,997 |
|
MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 4.75V @ 250µA | 24 nC @ 10 V | 940 pF @ 100 V | ±25V | - | 110W (Tc) | 215mOhm @ 7.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
||
Vishay Siliconix |
MOSFET P-CH 20V 3.6A 6TSOP
|
封装: - |
库存16,200 |
|
MOSFET (Metal Oxide) | 20 V | 3.6A (Ta) | 2.5V, 4.5V | 1.4V @ 250µA | 9 nC @ 4.5 V | - | ±12V | - | 1.1W (Ta) | 60mOhm @ 4.7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
||
Vishay Siliconix |
E SERIES POWER MOSFET D2PAK (TO-
|
封装: - |
库存3,000 |
|
MOSFET (Metal Oxide) | 600 V | 22A (Tc) | 10V | 5V @ 250µA | 36 nC @ 10 V | 1514 pF @ 100 V | ±30V | - | 179W (Tc) | 158mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
onsemi |
MOSFET N-CH 80V 9.3A/82A 8PQFN
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 80 V | 9.3A (Ta), 82A (Tc) | 6V, 10V | 4V @ 250µA | 30 nC @ 10 V | 2300 pF @ 40 V | ±20V | - | 1W (Ta), 78W (Tc) | 6mOhm @ 32A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET N-CH 60V 3.2A/4.1A 6TSOP
|
封装: - |
库存7,485 |
|
MOSFET (Metal Oxide) | 60 V | 3.2A (Ta), 4.1A (Tc) | 4.5V, 10V | 3V @ 250µA | 11 nC @ 10 V | 350 pF @ 30 V | ±20V | - | 2W (Ta), 3.3W (Tc) | 100mOhm @ 3.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
||
onsemi |
NTMFS4C13N - MOSFET SO8FL 30V 38
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 7.2A (Ta), 38A (Tc) | 4.5V, 10V | 2.1V @ 250µA | 15.2 nC @ 10 V | 770 pF @ 15 V | ±20V | - | 750mW (Ta), 21.6W (Tc) | 9.1mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Comchip Technology |
MOSFET P-CH 40V 11A/50A DPAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 11A (Ta), 50A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 40 nC @ 10 V | 3987 pF @ 20 V | ±20V | - | 2.5W (Ta), 69W (Tc) | 13mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
EF SERIES POWER MOSFET WITH FAST
|
封装: - |
库存150 |
|
MOSFET (Metal Oxide) | 800 V | 6.5A (Tc) | 10V | 4V @ 250µA | 63 nC @ 10 V | 1300 pF @ 100 V | ±30V | - | 34W (Tc) | 305mOhm @ 8.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 100V 42A DPAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 42A (Tc) | - | 4V @ 250µA | 100 nC @ 10 V | 2930 pF @ 25 V | - | - | 140W (Tc) | 18mOhm @ 33A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH TO220AB
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Fairchild Semiconductor |
POWER FIELD-EFFECT TRANSISTOR, 1
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 16.5A (Tc) | 10V | 5V @ 250µA | 45 nC @ 10 V | 1945 pF @ 25 V | ±30V | - | 205W (Tc) | 380mOhm @ 8.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |