图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 25V 80A I2PAK
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存7,664 |
|
MOSFET (Metal Oxide) | 25V | 80A (Tc) | 4.5V, 10V | 2V @ 100µA | 57nC @ 5V | 7027pF @ 15V | ±20V | - | 150W (Tc) | 3 mOhm @ 55A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Infineon Technologies |
MOSFET N-CH 30V 6.5A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存135,420 |
|
MOSFET (Metal Oxide) | 30V | 6.5A (Ta) | 4.5V, 10V | 1V @ 250µA | 33nC @ 10V | 650pF @ 25V | ±20V | Schottky Diode (Isolated) | 2W (Ta) | 32 mOhm @ 5.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET P-CH 60V 190MA SC-75A
|
封装: SC-75A |
库存189,252 |
|
MOSFET (Metal Oxide) | 60V | 190mA (Ta) | 4.5V, 10V | 3V @ 250µA | 1.7nC @ 15V | 23pF @ 25V | ±20V | - | 250mW (Ta) | 4 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SC-75A | SC-75A |
||
ON Semiconductor |
MOSFET N-CH 52V 2.6A SOT223
|
封装: TO-261-4, TO-261AA |
库存7,184 |
|
MOSFET (Metal Oxide) | 52V | 2.6A (Ta) | 3V, 10V | 2.5V @ 100µA | 7nC @ 4.5V | 250pF @ 35V | ±15V | - | 1.69W (Ta) | 125 mOhm @ 2.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 40V 545A AUTO
|
封装: DirectFET? Isometric L8 |
库存7,616 |
|
MOSFET (Metal Oxide) | 40V | 57A (Ta), 545A (Tc) | 10V | 3.9V @ 250µA | 562nC @ 10V | 17890pF @ 25V | 40V | - | 3.8W (Ta), 340W (Tc) | 0.6 mOhm @ 195A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET? Isometric L8 |
||
ON Semiconductor |
MOSFET N-CH 30V 52A SO8FL
|
封装: 8-PowerTDFN |
库存4,096 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
||
Diodes Incorporated |
MOSFET P-CH 30V 9.8A PWRDI3333-8
|
封装: 8-PowerWDFN |
库存7,120 |
|
MOSFET (Metal Oxide) | 30V | 9.8A (Ta) | 4.5V, 20V | 3V @ 250µA | 58nC @ 10V | 2987pF @ 15V | ±25V | - | 940mW (Ta) | 11 mOhm @ 12A, 20V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
||
IXYS |
MOSFET N-CH 850V 14A TO263-3
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存7,344 |
|
MOSFET (Metal Oxide) | 850V | 14A (Tc) | 10V | 5.5V @ 1mA | 30nC @ 10V | 1043pF @ 25V | ±30V | - | 460W (Tc) | 550 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Nexperia USA Inc. |
MOSFET N-CH 60V 130A TO-220
|
封装: TO-220-3 |
库存8,268 |
|
MOSFET (Metal Oxide) | 60V | 130A (Tc) | 4.5V, 10V | 2.1V @ 1mA | 151nC @ 10V | 8533pF @ 25V | ±20V | - | 263W (Tc) | 3.9 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 200V 5.9A TO220FP
|
封装: TO-220-3 Full Pack, Isolated Tab |
库存229,596 |
|
MOSFET (Metal Oxide) | 200V | 5.9A (Tc) | 10V | 4V @ 250µA | 43nC @ 10V | 800pF @ 25V | ±20V | - | 35W (Tc) | 400 mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
||
Vishay Siliconix |
MOSFET N-CH 400V 5.5A TO-220AB
|
封装: TO-220-3 |
库存134,736 |
|
MOSFET (Metal Oxide) | 400V | 5.5A (Tc) | 10V | 4.5V @ 250µA | 22nC @ 10V | 600pF @ 25V | ±30V | - | 74W (Tc) | 1 Ohm @ 3.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
STMicroelectronics |
MOSFET N-CH 250V 17A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,312 |
|
MOSFET (Metal Oxide) | 250V | 17A (Tc) | 10V | 4V @ 250µA | 29.5nC @ 10V | 1000pF @ 25V | ±20V | - | 110W (Tc) | 165 mOhm @ 8.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET P-CH 30V 60A 1212-8
|
封装: PowerPAK? 1212-8 |
库存53,100 |
|
MOSFET (Metal Oxide) | 30V | 60A (Tc) | 2.5V, 4.5V | 1.6V @ 250µA | 46nC @ 2.5V | 5860pF @ 15V | ±12V | - | 52W (Tc) | 8.55 mOhm @ 15A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
||
Toshiba Semiconductor and Storage |
MOSFET NCH 20V 800MA CST3
|
封装: 3-XFDFN |
库存601,992 |
|
MOSFET (Metal Oxide) | 20V | 800mA (Ta) | 1.5V, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | ±8V | - | 500mW (Ta) | 235 mOhm @ 800mA, 4.5V | 150°C (TA) | Surface Mount | CST3 | 3-XFDFN |
||
Infineon Technologies |
MOSFET N-CH 150V 3.6A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存71,400 |
|
MOSFET (Metal Oxide) | 150V | 3.6A (Ta) | 10V | 5.5V @ 250µA | 41nC @ 10V | 990pF @ 25V | ±30V | - | 2.5W (Ta) | 90 mOhm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
STMicroelectronics |
MOSFET N-CH 900V 9.2A TO-247
|
封装: TO-247-3 |
库存116,880 |
|
MOSFET (Metal Oxide) | 900V | 9.2A (Tc) | 10V | 4.5V @ 100µA | 115nC @ 10V | 3000pF @ 25V | ±30V | - | 200W (Tc) | 980 mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Cree/Wolfspeed |
MOSFET N-CH 900V 11A
|
封装: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA |
库存19,680 |
|
SiCFET (Silicon Carbide) | 900V | 11A (Tc) | 15V | 3.5V @ 1.2mA | 9.5nC @ 15V | 150pF @ 600V | +18V, -8V | - | 50W (Tc) | 360 mOhm @ 7.5A, 15V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 30V 8.5A POWER33
|
封装: 8-PowerWDFN |
库存443,580 |
|
MOSFET (Metal Oxide) | 30V | 8.5A (Ta), 18A (Tc) | 4.5V, 10V | 3V @ 250µA | 46nC @ 10V | 2045pF @ 15V | ±25V | - | 2.3W (Ta), 31W (Tc) | 20 mOhm @ 8.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3), Power33 | 8-PowerWDFN |
||
Renesas Electronics Corporation |
TRANSISTOR
|
封装: - |
Request a Quote |
|
- | - | 20A (Tj) | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diodes Incorporated |
MOSFET N-CH 80V 53.7A PWRDI5060
|
封装: - |
库存7,485 |
|
MOSFET (Metal Oxide) | 80 V | 53.7A (Tc) | 4.5V, 10V | 3V @ 250µA | 34 nC @ 10 V | 1949 pF @ 40 V | ±20V | - | 3.1W (Ta) | 17mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 (Type Q) | 8-PowerTDFN |
||
International Rectifier |
AUTOMOTIVE HEXFET P-CHANNEL POWE
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 80 V | 10A | - | - | - | - | - | - | 88W | - | - | Through Hole | TO-204AA (TO-3) | TO-204AA, TO-3 |
||
Rohm Semiconductor |
MOSFET P-CH 45V 16A TO252
|
封装: - |
库存16,656 |
|
MOSFET (Metal Oxide) | 45 V | 16A (Ta) | 4V, 10V | 3V @ 1mA | 16 nC @ 5 V | 2000 pF @ 10 V | ±20V | - | 20W (Tc) | 50mOhm @ 16A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
P-CHANNEL 150-V (D-S) MOSFET
|
封装: - |
库存8,070 |
|
MOSFET (Metal Oxide) | 150 V | 1.1A (Ta), 1.4A (Tc) | 6V, 10V | 4V @ 250µA | 19 nC @ 10 V | 510 pF @ 50 V | ±20V | - | 2W (Ta), 3.2W (Tc) | 750mOhm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
||
Vishay Siliconix |
MOSFET P-CH 200V 6.5A D2PAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 200 V | 6.5A (Tc) | 10V | 4V @ 250µA | 29 nC @ 10 V | 700 pF @ 25 V | ±20V | - | 3W (Ta), 74W (Tc) | 800mOhm @ 3.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
onsemi |
N-CHANNEL SILICON MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Transphorm |
GANFET N-CH 650V 16A 3PQFN
|
封装: - |
Request a Quote |
|
GaNFET (Gallium Nitride) | 650 V | 16A (Tc) | 8V | 2.6V @ 500µA | 6.2 nC @ 4.5 V | 720 pF @ 480 V | ±18V | - | 81W (Tc) | 180mOhm @ 10A, 8V | -55°C ~ 150°C (TJ) | Surface Mount | 3-PQFN (8x8) | 3-PowerDFN |
||
Nexperia USA Inc. |
BUK7S2R5-40H/SOT1235/LFPAK88
|
封装: - |
库存2,862 |
|
MOSFET (Metal Oxide) | 40 V | 140A (Ta) | 10V | 3.6V @ 1mA | 54 nC @ 10 V | 3793 pF @ 25 V | +20V, -10V | - | 135W (Ta) | 2.51mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK88 (SOT1235) | SOT-1235 |
||
Taiwan Semiconductor Corporation |
60V, 0.3A, SINGLE N-CHANNEL POWE
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 300mA (Ta) | 4.5V, 10V | 2.5V @ 250µA | 0.6 nC @ 4.5 V | 30 pF @ 25 V | ±20V | - | 300mW (Ta) | 2Ohm @ 300mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
onsemi |
MOSFET P-CH
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 15.3A (Ta), 164A (Tc) | 4.5V, 10V | 3V @ 250µA | 112 nC @ 4.5 V | 7880 pF @ 15 V | ±25V | - | 900mW (Ta), 104W (Tc) | 2.7mOhm @ 22A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Diodes Incorporated |
MOSFET BVDSS: 41V~60V SOT23 T&R
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 186mA (Ta) | 5V | 2V @ 1mA | 0.5 nC @ 5 V | 40 pF @ 25 V | ±30V | - | 520mW (Ta) | 10Ohm @ 100mA, 5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |