图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 60V 50A TO252-3
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存3,968 |
|
MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 4V @ 34µA | 47nC @ 10V | 3785pF @ 25V | ±20V | - | 71W (Tc) | 9 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET P-CH 12V 8.9A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存82,200 |
|
MOSFET (Metal Oxide) | 12V | 8.9A (Ta) | 1.8V, 4.5V | 900mV @ 250µA | 20nC @ 4.5V | 1877pF @ 10V | ±8V | - | 2.5W (Ta) | 24 mOhm @ 8.7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
ON Semiconductor |
MOSFET P-CH 50V .07A
|
封装: SC-70, SOT-323 |
库存2,336 |
|
MOSFET (Metal Oxide) | 50V | 70mA (Ta) | 1.5V, 4V | - | 1.4nC @ 10V | 7.4pF @ 10V | ±10V | - | 150mW (Ta) | 23 Ohm @ 40mA, 4V | 150°C (TJ) | Surface Mount | 3-MCP | SC-70, SOT-323 |
||
Renesas Electronics America |
MOSFET N-CH 400V 43A TO3P
|
封装: TO-3P-3, SC-65-3 |
库存7,648 |
|
MOSFET (Metal Oxide) | 400V | 43A (Ta) | 10V | - | 99nC @ 10V | 4100pF @ 25V | ±30V | - | 200W (Tc) | 100 mOhm @ 21.5A, 10V | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
NXP |
MOSFET N-CH 40V 100A TO220AB
|
封装: TO-220-3 |
库存3,680 |
|
MOSFET (Metal Oxide) | 40V | 100A (Tc) | 5V, 10V | 2.1V @ 1mA | 69.5nC @ 5V | 9150pF @ 25V | ±10V | - | 234W (Tc) | 2.8 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 30V 11A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存6,128 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 1V @ 250µA (Min) | 18nC @ 4.5V | - | ±20V | - | 1.6W (Ta) | 8 mOhm @ 16A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET N-CH 20V 500MA SC-75A
|
封装: SC-75A |
库存2,519,880 |
|
MOSFET (Metal Oxide) | 20V | 500mA (Ta) | 1.8V, 4.5V | 900mV @ 250µA | 0.75nC @ 4.5V | - | ±6V | - | 150mW (Ta) | 700 mOhm @ 600mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-75A | SC-75A |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 25V 6.5A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存15,888 |
|
MOSFET (Metal Oxide) | 25V | 6.5A (Ta), 2.7A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 9nC @ 10V | 425pF @ 13V | ±20V | - | 3.7W (Ta), 18W (Tc) | 40 mOhm @ 2.7A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 20V 48A TO-262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存2,048 |
|
MOSFET (Metal Oxide) | 20V | 48A (Tc) | 4.5V, 7V | 700mV @ 250µA | 43nC @ 4.5V | 2000pF @ 15V | ±10V | - | 69W (Tc) | 16 mOhm @ 29A, 7V | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
NXP |
MOSFET P-CH 20V 3.5A SOT1118
|
封装: 6-UDFN Exposed Pad |
库存36,000 |
|
MOSFET (Metal Oxide) | 20V | 3.5A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 6nC @ 4.5V | 380pF @ 10V | ±8V | Schottky Diode (Isolated) | 520mW (Ta), 8.3W (Tc) | 70 mOhm @ 1A, 4.5V | 150°C (TJ) | Surface Mount | DFN2020-6 | 6-UDFN Exposed Pad |
||
Diodes Incorporated |
MOSFET BVDSS: 25V 30V POWERDI506
|
封装: 8-PowerTDFN |
库存6,080 |
|
MOSFET (Metal Oxide) | 30V | 35.8A (Ta) | 4.5V, 10V | 3V @ 250µA | 123nC @ 10V | 7019pF @ 15V | ±20V | - | 2.5W (Ta) | 1.35 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 8TDSON
|
封装: 8-PowerTDFN |
库存2,352 |
|
MOSFET (Metal Oxide) | 40V | 40A (Tc) | 4.5V, 10V | 2V @ 10µA | 17nC @ 10V | 920pF @ 25V | ±16V | - | 34W (Tc) | 7.4 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
||
Microsemi Corporation |
MOSFET N-CH 500V 67A T-MAX
|
封装: TO-247-3 Variant |
库存6,144 |
|
MOSFET (Metal Oxide) | 500V | 67A (Tc) | 10V | 5V @ 2.5mA | 141nC @ 10V | 7010pF @ 25V | ±30V | - | 694W (Tc) | 65 mOhm @ 33.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | T-MAX? [B2] | TO-247-3 Variant |
||
Infineon Technologies |
MOSFET N-CH 100V 40A 8TSDSON
|
封装: 8-PowerTDFN |
库存2,016 |
|
MOSFET (Metal Oxide) | 100V | 40A (Tc) | 4.5V, 10V | 2.1V @ 33µA | 35nC @ 10V | 2500pF @ 50V | ±20V | - | 2.1W (Ta), 63W (Tc) | 15 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
||
Vishay Siliconix |
MOSFET N-CH 20V 50A POLARPAK
|
封装: 10-PolarPAK? (S) |
库存6,912 |
|
MOSFET (Metal Oxide) | 20V | 50A (Tc) | 2.5V, 4.5V | 2V @ 250µA | 143nC @ 10V | 4300pF @ 10V | ±12V | - | 5.2W (Ta), 104W (Tc) | 3.5 mOhm @ 18A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK? (S) | 10-PolarPAK? (S) |
||
EPC |
TRANS GAN 80V BUMPED DIE
|
封装: Die |
库存1,616,796 |
|
GaNFET (Gallium Nitride) | 80V | 6.8A (Ta) | 5V | 2.5V @ 2mA | 2.4nC @ 5V | 210pF @ 40V | +6V, -4V | - | - | 25 mOhm @ 6A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
||
Vishay Siliconix |
MOSFET N-CH 30V 90A TO252
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存6,128 |
|
MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 95nC @ 10V | 3800pF @ 15V | ±20V | - | 10W (Ta), 83W (Tc) | 5.7 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N-CH 800V 6A TO220
|
封装: TO-220-3 |
库存15,804 |
|
MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 5V @ 100µA | 13.4nC @ 10V | 360pF @ 100V | ±30V | - | 110W (Tc) | 1.2 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 55V 5.1A SOT223
|
封装: TO-261-4, TO-261AA |
库存1,393,404 |
|
MOSFET (Metal Oxide) | 55V | 5.1A (Ta) | 10V | 4V @ 250µA | 14nC @ 10V | 340pF @ 25V | ±20V | - | 1W (Ta) | 57.5 mOhm @ 3.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Vishay Siliconix |
MOSFET P-CH 12V 3A SOT23-3
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存660,156 |
|
MOSFET (Metal Oxide) | 12V | 3A (Ta) | 1.8V, 4.5V | 900mV @ 250µA | 15nC @ 4.5V | 715pF @ 6V | ±8V | - | 750mW (Ta) | 50 mOhm @ 3.85A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Diodes Incorporated |
MOSFET BVDSS: 25V~30V SOT323 T&R
|
封装: - |
库存1,461 |
|
MOSFET (Metal Oxide) | 30 V | 2.7A (Ta) | 3.3V, 10V | 1.8V @ 250µA | 3.5 nC @ 4.5 V | 278 pF @ 15 V | ±20V | - | 490mW (Ta) | 60mOhm @ 3.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
||
Renesas Electronics Corporation |
MOSFET N-CH 600V 20A TO3PSG
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 20A (Tc) | - | - | 27 nC @ 10 V | 1600 pF @ 25 V | - | - | - | 178mOhm @ 10A, 10V | - | Through Hole | TO-3PSG | TO-3P-3, SC-65-3 |
||
Infineon Technologies |
MOSFET N-CH 500V 4.3A TO252-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 4.3A (Tc) | 13V | 3.5V @ 100µA | 10.5 nC @ 10 V | 231 pF @ 100 V | ±20V | - | 34W (Tc) | 950mOhm @ 1.2A, 13V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Panjit International Inc. |
SOT-23, MOSFET
|
封装: - |
库存280,878 |
|
MOSFET (Metal Oxide) | 30 V | 2.9A (Ta) | 4.5V, 10V | 2.1V @ 250µA | 9.8 nC @ 10 V | 396 pF @ 15 V | ±20V | - | 1.25W (Ta) | 110mOhm @ 2.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
TRENCH <= 40V
|
封装: - |
库存1,848 |
|
MOSFET (Metal Oxide) | 40 V | 38A (Ta), 191A (Tc) | 6V, 10V | 3.4V @ 126µA | 159 nC @ 10 V | 7500 pF @ 20 V | ±20V | - | 3.8W (Ta), 188W (Tc) | 1.45mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 100V 90A TDSON-8-34
|
封装: - |
库存26,379 |
|
MOSFET (Metal Oxide) | 100 V | 90A (Tc) | 6V, 10V | 3.8V @ 59µA | 36 nC @ 10 V | 3275 pF @ 50 V | ±20V | - | 115W (Tc) | 6.2mOhm @ 45A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-34 | 8-PowerTDFN |
||
Microchip Technology |
MOSFET N-CH 500V 22A D3PAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 500 V | 22A (Tc) | - | 5V @ 1mA | 43 nC @ 10 V | 1900 pF @ 25 V | - | - | - | 240mOhm @ 11A, 10V | - | Surface Mount | D3PAK | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
||
onsemi |
MOSFET N-CH 60V 7.1A/40A TO252AA
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 7.1A (Ta), 40A (Tc) | 5V, 10V | 2V @ 250µA | 21 nC @ 5 V | 1850 pF @ 25 V | ±20V | - | 75W (Tc) | 19mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 900V 15A TO220-FP
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 900 V | 15A (Tc) | 10V | 3.5V @ 1mA | 94 nC @ 10 V | 2400 pF @ 100 V | ±20V | - | 35W (Tc) | 340mOhm @ 9.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
||
Nexperia USA Inc. |
PSMN1R0-30YLD/SOT669/LFPAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 300A (Ta) | 4.5V, 10V | 2.2V @ 2mA | 121.35 nC @ 10 V | 8598 pF @ 15 V | ±20V | Schottky Diode (Body) | 238W (Ta) | 1.02mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |