页 220 - 晶体管 - FET，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - FET，MOSFET - 单

记录 42,029
页  220/1,401
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数量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IRFSL4229PBF
Infineon Technologies

MOSFET N-CH 250V 45A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4560pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 330W (Tc)
  • Rds On (Max) @ Id, Vgs: 48 mOhm @ 26A, 10V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存33,000
MOSFET (Metal Oxide)
250V
45A (Tc)
10V
5V @ 250µA
110nC @ 10V
4560pF @ 25V
±30V
-
330W (Tc)
48 mOhm @ 26A, 10V
-40°C ~ 175°C (TJ)
Through Hole
TO-262
TO-262-3 Long Leads, I2Pak, TO-262AA
5HN01C-TB-EX
ON Semiconductor

MOSFET N-CH 50V 100MA CP3

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
库存3,760
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
NDF03N60ZH
ON Semiconductor

MOSFET N-CH 600V 3.1A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 372pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 27W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FP
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存6,448
MOSFET (Metal Oxide)
600V
3.1A (Tc)
10V
4.5V @ 50µA
18nC @ 10V
372pF @ 25V
±30V
-
27W (Tc)
3.6 Ohm @ 1.2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220FP
TO-220-3 Full Pack
NTP5863NG
ON Semiconductor

MOSFET N-CH 60V 97A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存7,216
MOSFET (Metal Oxide)
60V
97A (Tc)
10V
4V @ 250µA
55nC @ 10V
3200pF @ 25V
±20V
-
150W (Tc)
7.8 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot SI4850EY-T1
Vishay Siliconix

MOSFET N-CH 60V 6A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta)
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存123,480
MOSFET (Metal Oxide)
60V
6A (Ta)
4.5V, 10V
3V @ 250µA
27nC @ 10V
-
±20V
-
1.7W (Ta)
22 mOhm @ 6A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
SI1051X-T1-E3
Vishay Siliconix

MOSFET P-CH 8V 1.2A SC89-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 8V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.45nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 4V
  • Vgs (Max): ±5V
  • FET Feature: -
  • Power Dissipation (Max): 236mW (Ta)
  • Rds On (Max) @ Id, Vgs: 122 mOhm @ 1.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-89-6
  • Package / Case: SOT-563, SOT-666
封装: SOT-563, SOT-666
库存6,512
MOSFET (Metal Oxide)
8V
-
1.5V, 4.5V
1V @ 250µA
9.45nC @ 5V
560pF @ 4V
±5V
-
236mW (Ta)
122 mOhm @ 1.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SC-89-6
SOT-563, SOT-666
IRFU020
Vishay Siliconix

MOSFET N-CH 60V 14A I-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251AA
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存5,376
MOSFET (Metal Oxide)
60V
14A (Tc)
10V
4V @ 250µA
25nC @ 10V
640pF @ 25V
±20V
-
2.5W (Ta), 42W (Tc)
100 mOhm @ 8.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-251AA
TO-251-3 Short Leads, IPak, TO-251AA
AUIRF1324STRL
Infineon Technologies

MOSFET N-CH 24V 195A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7590pF @ 24V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.65 mOhm @ 195A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存4,912
MOSFET (Metal Oxide)
24V
195A (Tc)
10V
4V @ 250µA
240nC @ 10V
7590pF @ 24V
±20V
-
300W (Tc)
1.65 mOhm @ 195A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TK9A60D(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 9A TO-220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 830 mOhm @ 4.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存6,080
MOSFET (Metal Oxide)
600V
9A (Ta)
10V
4V @ 1mA
24nC @ 10V
1200pF @ 25V
±30V
-
45W (Tc)
830 mOhm @ 4.5A, 10V
150°C (TJ)
Through Hole
TO-220SIS
TO-220-3 Full Pack
TSM600N25ECH C5G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, PLANA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 423pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251 (IPAK)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存3,072
MOSFET (Metal Oxide)
250V
8A (Tc)
10V
5V @ 250µA
8.4nC @ 10V
423pF @ 25V
±30V
-
52W (Tc)
600 mOhm @ 4A, 10V
150°C (TJ)
Through Hole
TO-251 (IPAK)
TO-251-3 Short Leads, IPak, TO-251AA
DMT6009LCT
Diodes Incorporated

MOSFET N-CHA 60V 37.2A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 37.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1925pF @ 30V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 13.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存9,984
MOSFET (Metal Oxide)
60V
37.2A (Tc)
4.5V, 10V
2V @ 250µA
33.5nC @ 10V
1925pF @ 30V
±16V
-
2.2W (Ta), 25W (Tc)
12 mOhm @ 13.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot SIR878DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 100V 40A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 5W (Ta), 44.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
封装: PowerPAK? SO-8
库存9,792
MOSFET (Metal Oxide)
100V
40A (Tc)
4.5V, 10V
2.8V @ 250µA
43nC @ 10V
1250pF @ 50V
±20V
-
5W (Ta), 44.5W (Tc)
14 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
BUK7660-100A,118
Nexperia USA Inc.

MOSFET N-CH 100V 26A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 1377pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 106W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存24,324
MOSFET (Metal Oxide)
100V
26A (Tc)
10V
4V @ 1mA
-
1377pF @ 25V
±20V
-
106W (Tc)
60 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot 3LP01M-TL-H
ON Semiconductor

MOSFET P-CH 30V 0.1A MCP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.43nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7.5pF @ 10V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 150mW (Ta)
  • Rds On (Max) @ Id, Vgs: 10.4 Ohm @ 50mA, 4V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-MCP
  • Package / Case: SC-70, SOT-323
封装: SC-70, SOT-323
库存4,625,292
MOSFET (Metal Oxide)
30V
100mA (Ta)
1.5V, 4V
-
1.43nC @ 10V
7.5pF @ 10V
±10V
-
150mW (Ta)
10.4 Ohm @ 50mA, 4V
150°C (TJ)
Surface Mount
3-MCP
SC-70, SOT-323
hot IRLMS1902TRPBF
Infineon Technologies

MOSFET N-CH 20V 3.2A 6-TSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
  • Vgs(th) (Max) @ Id: 700mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 15V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro6?(TSOP-6)
  • Package / Case: SOT-23-6
封装: SOT-23-6
库存1,606,284
MOSFET (Metal Oxide)
20V
3.2A (Ta)
2.7V, 4.5V
700mV @ 250µA
7nC @ 4.5V
300pF @ 15V
±12V
-
1.7W (Ta)
100 mOhm @ 2.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
Micro6?(TSOP-6)
SOT-23-6
hot VN0106N3-G
Microchip Technology

MOSFET N-CH 60V 350MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 65pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
封装: TO-226-3, TO-92-3 (TO-226AA)
库存19,632
MOSFET (Metal Oxide)
60V
350mA (Tj)
5V, 10V
2.4V @ 1mA
-
65pF @ 25V
±20V
-
1W (Tc)
3 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
hot FDC604P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 5.5A SSOT-6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1926pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 5.5A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SuperSOT?-6
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封装: SOT-23-6 Thin, TSOT-23-6
库存3,892,056
MOSFET (Metal Oxide)
20V
5.5A (Ta)
1.8V, 4.5V
1.5V @ 250µA
30nC @ 4.5V
1926pF @ 10V
±8V
-
1.6W (Ta)
33 mOhm @ 5.5A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SuperSOT?-6
SOT-23-6 Thin, TSOT-23-6
SIHFL110TR-BE3
Vishay Siliconix

MOSFET N-CH 100V 1.5A SOT223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
  • Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
封装: -
库存6,705
MOSFET (Metal Oxide)
100 V
1.5A (Tc)
-
4V @ 250µA
8.3 nC @ 10 V
180 pF @ 25 V
±20V
-
2W (Ta), 3.1W (Tc)
540mOhm @ 900mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-223
TO-261-4, TO-261AA
BUK7M9R5-40HX
Nexperia USA Inc.

MOSFET N-CH 40V 40A LFPAK33

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1166 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Ta)
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK33
  • Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
封装: -
库存8,934
MOSFET (Metal Oxide)
40 V
40A (Ta)
10V
3.6V @ 1mA
18 nC @ 10 V
1166 pF @ 25 V
±20V
-
55W (Ta)
9.5mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK33
SOT-1210, 8-LFPAK33 (5-Lead)
IRF100P219XKMA1
Infineon Technologies

MOSFET N-CH 100V TO247AC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 203A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 278µA
  • Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 12020 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 341W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
100 V
203A (Tc)
6V, 10V
3.8V @ 278µA
270 nC @ 10 V
12020 pF @ 50 V
±20V
-
341W (Tc)
1.7mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247AC
TO-247-3
RLD03N06CLESM9A
Harris Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TSM1NB60CH
Taiwan Semiconductor Corporation

600V, 1A, SINGLE N-CHANNEL POWER

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 39W (Tc)
  • Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251 (IPAK)
  • Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA
封装: -
Request a Quote
MOSFET (Metal Oxide)
600 V
1A (Tc)
10V
4.5V @ 250µA
6.1 nC @ 10 V
138 pF @ 25 V
±30V
-
39W (Tc)
10Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-251 (IPAK)
TO-251-3 Short Leads, IPAK, TO-251AA
AOM065V120X2
Alpha & Omega Semiconductor Inc.

1200V SILICON CARBIDE MOSFET

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 40.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 3.5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 800 V
  • Vgs (Max): +18V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 187.5W (Tj)
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
封装: -
Request a Quote
SiC (Silicon Carbide Junction Transistor)
1200 V
40.3A (Tc)
15V
3.5V @ 10mA
62.3 nC @ 15 V
1716 pF @ 800 V
+18V, -8V
-
187.5W (Tj)
85mOhm @ 10A, 15V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
DMP3097LQ-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT23 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 563 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
30 V
3.9A (Ta)
4.5V, 10V
2.1V @ 250µA
13.4 nC @ 10 V
563 pF @ 25 V
±20V
-
1W
65mOhm @ 3.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
2SK3292-TD-E
onsemi

NCH 4V DRIVE SERIES

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PSMNR51-25YLHX
Nexperia USA Inc.

MOSFET N-CH 25V 380A LFPAK56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Continuous Drain (Id) @ 25°C: 380A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6990 pF @ 12 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 333W (Ta)
  • Rds On (Max) @ Id, Vgs: 0.57mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56; Power-SO8
  • Package / Case: SOT-1023, 4-LFPAK
封装: -
库存8,055
MOSFET (Metal Oxide)
25 V
380A (Ta)
4.5V, 10V
2.2V @ 2mA
113 nC @ 10 V
6990 pF @ 12 V
±20V
-
333W (Ta)
0.57mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56; Power-SO8
SOT-1023, 4-LFPAK
CPH6350-TL-EX
onsemi

MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
6A (Tj)
-
-
-
-
-
-
-
-
-
-
-
-
AOD2146
Sanken Electric USA Inc.

40V N-CHANNEL ALPHASGT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 34.5A (Ta), 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.2W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
Request a Quote
MOSFET (Metal Oxide)
40 V
34.5A (Ta), 54A (Tc)
4.5V, 10V
2.5V @ 250µA
70 nC @ 10 V
3830 pF @ 20 V
±20V
-
6.2W (Ta), 100W (Tc)
3.1mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
MCB90N12-TP
Micro Commercial Co

N-CHANNEL MOSFET, D2-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120 V
  • Current - Continuous Drain (Id) @ 25°C: 90A
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4514 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 260W
  • Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
Request a Quote
MOSFET (Metal Oxide)
120 V
90A
-
4V @ 250µA
65 nC @ 10 V
4514 pF @ 50 V
±20V
-
260W
7.2mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RFP30P06
onsemi

MOSFET P-CH 60V 30A TO220-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 30A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
60 V
30A (Tc)
-
4V @ 250µA
170 nC @ 20 V
3200 pF @ 25 V
-
-
-
65mOhm @ 30A, 10V
-
Through Hole
TO-220-3
TO-220-3