图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 100A TO-220AB
|
封装: TO-220-3 |
库存6,016 |
|
MOSFET (Metal Oxide) | 30V | 100A (Tc) | 10V | 4V @ 250µA | 150nC @ 10V | 7020pF @ 25V | ±20V | - | 300W (Tc) | 3.3 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 55V 120A D2PAK7
|
封装: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
库存7,632 |
|
MOSFET (Metal Oxide) | 55V | 120A (Tc) | 10V | 4V @ 150µA | 230nC @ 10V | 5360pF @ 25V | ±20V | - | 230W (Tc) | 4.9 mOhm @ 88A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
||
Renesas Electronics America |
MOSFET N-CH 60V 25A WPAK
|
封装: 8-WFDFN Exposed Pad |
库存2,672 |
|
MOSFET (Metal Oxide) | 60V | 25A (Ta) | 10V | - | 19.4nC @ 10V | 1580pF @ 10V | ±20V | - | 50W (Tc) | 11.1 mOhm @ 12.5A, 10V | 150°C (TJ) | Surface Mount | 8-WPAK | 8-WFDFN Exposed Pad |
||
Renesas Electronics America |
MOSFET N-CH 60V 80A TO-263
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存2,816 |
|
MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 128nC @ 10V | 6900pF @ 25V | ±20V | - | 1.8W (Ta), 115W (Tc) | 8.3 mOhm @ 40A, 10V | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 250V 8A TO-220
|
封装: TO-220-3 |
库存817,332 |
|
MOSFET (Metal Oxide) | 250V | 8A (Tc) | 10V | 4V @ 250µA | 51.8nC @ 10V | 770pF @ 25V | ±20V | - | 80W (Tc) | 450 mOhm @ 4A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 12A TO-220SIS
|
封装: TO-220-3 Full Pack |
库存6,016 |
|
MOSFET (Metal Oxide) | 450V | 12A (Ta) | 10V | 4V @ 1mA | 24nC @ 10V | 1200pF @ 25V | ±30V | - | 45W (Tc) | 520 mOhm @ 6A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
ON Semiconductor |
MOSFET N-CH 60V SO8FL
|
封装: 8-PowerTDFN, 5 Leads |
库存3,888 |
|
MOSFET (Metal Oxide) | 60V | 22A (Ta), 100A (Tc) | 4.5V, 10V | 2V @ 250µA | 34nC @ 10V | 2200pF @ 50V | ±20V | - | 3.7W (Ta), 79W (Tc) | 4 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, PLANA
|
封装: TO-251-3 Stub Leads, IPak |
库存3,552 |
|
MOSFET (Metal Oxide) | 650V | 2A (Tc) | 10V | 4V @ 250µA | 13nC @ 10V | 390pF @ 25V | ±20V | - | 65W (Tc) | 5 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Stub Leads, IPak |
||
Infineon Technologies |
MOSFET N-CH 150V 23A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,424 |
|
MOSFET (Metal Oxide) | 150V | 23A (Tc) | 10V | 5.5V @ 250µA | 56nC @ 10V | 1200pF @ 25V | ±30V | - | 3.8W (Ta), 136W (Tc) | 90 mOhm @ 14A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 60V 35A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存828,936 |
|
MOSFET (Metal Oxide) | 60V | 35A (Tc) | 5V, 10V | 4V @ 250µA | 31nC @ 5V | 1600pF @ 25V | ±20V | - | 70W (Tc) | 28 mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
N-CHANNEL 600 V, 0.168 OHM TYP.,
|
封装: TO-220-3 Full Pack |
库存7,752 |
|
MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 4V @ 250µA | 29nC @ 10V | 1060pF @ 100V | ±25V | - | 35W (Tc) | 190 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
STMicroelectronics |
MOSFET N-CH 650V 88A ISOTOP
|
封装: ISOTOP |
库存5,264 |
|
MOSFET (Metal Oxide) | 650V | 88A | 10V | 5V @ 250µA | 204nC @ 10V | 8825pF @ 100V | ±25V | - | 494W (Tc) | 29 mOhm @ 42A, 10V | 150°C (TJ) | Chassis Mount | ISOTOP | ISOTOP |
||
Vishay Siliconix |
MOSFET P-CH 400V 1.8A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存379,980 |
|
MOSFET (Metal Oxide) | 400V | 1.8A (Tc) | 10V | 4V @ 250µA | 13nC @ 10V | 270pF @ 25V | ±20V | - | 50W (Tc) | 7 Ohm @ 1.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Rohm Semiconductor |
MOSFET P-CH 12V 2.5A WEMT6
|
封装: SOT-563, SOT-666 |
库存185,280 |
|
MOSFET (Metal Oxide) | 12V | 2.5A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 16nC @ 4.5V | 2000pF @ 6V | -8V | - | 400mW (Ta) | 62 mOhm @ 2.5A, 4.5V | 150°C (TJ) | Surface Mount | 6-WEMT | SOT-563, SOT-666 |
||
Vishay Siliconix |
MOSFET N-CH 650V 24A TO247AC
|
封装: TO-247-3 |
库存14,736 |
|
MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 4V @ 250µA | 122nC @ 10V | 2774pF @ 100V | ±30V | - | 250W (Tc) | 156 mOhm @ 12A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 650V 11.1A 4VSON
|
封装: 4-PowerTSFN |
库存25,824 |
|
MOSFET (Metal Oxide) | 650V | 11.1A (Tc) | 10V | 3.5V @ 440µA | 22nC @ 10V | 1100pF @ 100V | ±20V | - | 96W (Tc) | 299 mOhm @ 6.6A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
||
Rohm Semiconductor |
MOSFET N-CH 45V 1.6A TUMT3
|
封装: 3-SMD, Flat Leads |
库存36,120 |
|
MOSFET (Metal Oxide) | 45V | 1.6A (Ta) | 2.5V, 4.5V | 1.5V @ 1mA | 2.3nC @ 4.5V | 150pF @ 10V | ±12V | - | 320mW (Ta) | 190 mOhm @ 1.6A, 4.5V | 150°C (TJ) | Surface Mount | TUMT3 | 3-SMD, Flat Leads |
||
Diodes Incorporated |
MOSFET N-CH 60V 8.9A 6UDFN
|
封装: 6-UDFN Exposed Pad |
库存26,832 |
|
MOSFET (Metal Oxide) | 60V | 8.9A (Ta) | 4.5V, 10V | 3V @ 250µA | 17nC @ 10V | 864pF @ 30V | ±20V | - | 820mW (Ta) | 16 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN (2x2) | 6-UDFN Exposed Pad |
||
Nexperia USA Inc. |
MOSFET P-CH 240V 0.2A SOT89
|
封装: TO-243AA |
库存273,198 |
|
MOSFET (Metal Oxide) | 240V | 200mA (Ta) | 10V | 2.8V @ 1mA | - | 90pF @ 25V | ±20V | - | 560mW (Ta), 12.5W (Tc) | 12 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-89-3 | TO-243AA |
||
ON Semiconductor |
MOSFET N-CH 20V 3.2A SOT-363
|
封装: 6-TSSOP, SC-88, SOT-363 |
库存3,742,284 |
|
MOSFET (Metal Oxide) | 20V | 3.2A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 15nC @ 4.5V | 500pF @ 10V | ±8V | - | 1W (Ta) | 60 mOhm @ 4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-88/SC70-6/SOT-363 | 6-TSSOP, SC-88, SOT-363 |
||
onsemi |
MOSFET N-CH 60V 80A POWER56
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 10V | 4V @ 250µA | 71 nC @ 10 V | 4335 pF @ 30 V | ±20V | - | 214W (Tj) | 3.5mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerVDFN |
||
Harris Corporation |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 75A (Tc) | 4.5V, 10V | 3V @ 250µA | 72 nC @ 10 V | 2100 pF @ 25 V | ±16V | - | 145W (Tc) | 9mOhm @ 75A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
LOW POWER EASY
|
封装: - |
库存36 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diodes Incorporated |
MOSFET BVDSS: 31V~40V POWERDI506
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 31A (Ta), 100A (Tc) | 10V | 4V @ 250µA | 68.6 nC @ 10 V | 4305 pF @ 25 V | ±20V | - | 3.6W (Ta), 167W (Tc) | 2.7mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
||
Sanken Electric USA Inc. |
LOW RON MOSFET 100V/20A/0.033
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 20A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 45 nC @ 10 V | 2200 pF @ 10 V | ±20V | - | 40W (Tc) | 75mOhm @ 8.5A, 10V | 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
onsemi |
MOSFET N-CH 650V 75A TO247-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 75A (Tc) | - | 4V @ 14.3mA | 282 nC @ 10 V | 15993 pF @ 400 V | ±30V | - | 625W (Tc) | 19.3mOhm @ 37.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
STMicroelectronics |
N-CHANNEL 650 V, 19.9 MOHM TYP.,
|
封装: - |
库存108 |
|
MOSFET (Metal Oxide) | 650 V | 95A (Tc) | 10V | 4.2V @ 250µA | 230 nC @ 10 V | 8844 pF @ 400 V | ±30V | - | 463W (Tc) | 23mOhm @ 48A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
||
onsemi |
MOSFET P-CH 30V 5A 3CPH
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 5A (Ta) | - | - | 21.8 nC @ 10 V | 1115 pF @ 10 V | - | - | 1.2W (Ta) | 45mOhm @ 2.5A, 10V | 150°C (TJ) | Surface Mount | 3-CPH | SC-96 |
||
onsemi |
MOSFET N-CH 40V 30A/138A 4LFPAK
|
封装: - |
库存8,550 |
|
MOSFET (Metal Oxide) | 40 V | 30A (Ta), 138A (Tc) | 10V | 3.5V @ 90µA | 32 nC @ 10 V | 2100 pF @ 25 V | ±20V | - | 3.9W (Ta), 83W (Tc) | 2.3mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK4 (5x6) | SOT-1023, 4-LFPAK |
||
onsemi |
MOSFET N-CH 30V 270MA SC70
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 270mA (Ta) | 2.5V, 4V | 1.5V @ 100µA | 1.3 nC @ 5 V | 33 pF @ 5 V | ±20V | - | 330mW (Ta) | 1.5Ohm @ 10mA, 4V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 (SOT323) | SC-70, SOT-323 |