图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 12.7A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存3,104 |
|
MOSFET (Metal Oxide) | 30V | 12.7A (Ta) | 4.5V, 10V | 2V @ 55µA | 26.2nC @ 5V | 1640pF @ 25V | ±20V | - | 2.5W (Ta) | 10 mOhm @ 12.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Infineon Technologies |
MOSFET N-CH 100V 36A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,096 |
|
MOSFET (Metal Oxide) | 100V | 36A (Tc) | 10V | 4V @ 250µA | 63nC @ 10V | 1770pF @ 25V | ±20V | - | 92W (Tc) | 26.5 mOhm @ 22A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Microsemi Corporation |
MOSFET N-CH TO-204AE TO-3
|
封装: TO-204AE |
库存2,320 |
|
MOSFET (Metal Oxide) | 200V | 30A (Tc) | 10V | 4V @ 250µA | 115nC @ 10V | - | ±20V | - | 4W (Ta), 150W (Tc) | 90 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3 | TO-204AE |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 18A 8SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存474,252 |
|
MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 2.3V @ 250µA | 50nC @ 10V | 2760pF @ 15V | ±20V | - | 3.1W (Ta) | 5.8 mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET P-CH 100V 1A HEXDIP
|
封装: 4-DIP (0.300", 7.62mm) |
库存4,848 |
|
MOSFET (Metal Oxide) | 100V | 1A (Ta) | - | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | - | - | - | 600 mOhm @ 600mA, 10V | - | Through Hole | 4-HVMDIP | 4-DIP (0.300", 7.62mm) |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 4.5A PW-MOLD2
|
封装: TO-251-3 Stub Leads, IPak |
库存3,040 |
|
MOSFET (Metal Oxide) | 250V | 4.5A (Ta) | 10V | 3.5V @ 1mA | 10nC @ 10V | 440pF @ 10V | ±20V | - | 20W (Tc) | 1 Ohm @ 2.5A, 10V | 150°C (TJ) | Through Hole | PW-MOLD2 | TO-251-3 Stub Leads, IPak |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 150V 43A TO-220AB
|
封装: TO-220-3 |
库存3,280 |
|
MOSFET (Metal Oxide) | 150V | 43A (Tc) | 10V | 4V @ 250µA | 175nC @ 20V | 2730pF @ 25V | ±20V | - | 230W (Tc) | 42 mOhm @ 43A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
ON Semiconductor |
MOSFET N-CH 60V 75A TO-220AB
|
封装: TO-220-3 |
库存2,832 |
|
MOSFET (Metal Oxide) | 60V | 75A (Ta) | 5V | 2V @ 250µA | 92nC @ 5V | 4370pF @ 25V | ±20V | - | 2.4W (Ta), 214W (Tj) | 11 mOhm @ 37.5A, 5V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
ON Semiconductor |
MOSFET P-CH 20V 2.4A 8MICRO
|
封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
库存23,076 |
|
MOSFET (Metal Oxide) | 20V | 2.4A (Ta) | 2.5V, 4.5V | 1.4V @ 250µA | 18nC @ 4.5V | 550pF @ 16V | ±8V | - | 780mW (Ta) | 90 mOhm @ 2.4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | Micro8? | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
||
Vishay Siliconix |
MOSFET P-CH 60V 1.6A 4-DIP
|
封装: 4-DIP (0.300", 7.62mm) |
库存12,924 |
|
MOSFET (Metal Oxide) | 60V | 1.6A (Ta) | 10V | 4V @ 1µA | 19nC @ 10V | 570pF @ 25V | ±20V | - | 1.3W (Ta) | 280 mOhm @ 960mA, 10V | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
||
STMicroelectronics |
MOSFET N-CH 40V 80A POWERFLAT6X5
|
封装: 8-PowerVDFN |
库存6,896 |
|
MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 1V @ 250µA | 28nC @ 4.5V | 2530pF @ 25V | ±16V | - | 80W (Tc) | 5 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat? (6x5) | 8-PowerVDFN |
||
Infineon Technologies |
MOSFET N-CH BARE DIE
|
封装: - |
库存2,352 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 40V 240A D2PAK
|
封装: TO-263-7, D2Pak (6 Leads + Tab) |
库存25,212 |
|
MOSFET (Metal Oxide) | 40V | 240A (Tc) | 6V, 10V | 3.9V @ 250µA | 460nC @ 10V | 13975pF @ 25V | ±20V | - | 375W (Tc) | 0.75 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D2Pak (6 Leads + Tab) |
||
EPC |
TRANS GAN 40V 3.8A BUMPED DIE
|
封装: Die |
库存6,272 |
|
GaNFET (Gallium Nitride) | 40V | 3.8A (Ta) | 5V | 2.5V @ 250µA | 0.3nC @ 5V | 39pF @ 20V | +6V, -5V | - | - | 160 mOhm @ 500mA, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
||
IXYS |
MOSFET N-CH 100V 170A TO-264
|
封装: TO-264-3, TO-264AA |
库存3,920 |
|
MOSFET (Metal Oxide) | 100V | 170A (Tc) | 10V | 5V @ 250µA | 198nC @ 10V | 6000pF @ 25V | ±20V | - | 715W (Tc) | 9 mOhm @ 500mA, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
||
IXYS |
MOSFET N-CH 200V 48A TO-263
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,240 |
|
MOSFET (Metal Oxide) | 200V | 48A (Tc) | 10V | 4.5V @ 250µA | 60nC @ 10V | 3090pF @ 25V | ±30V | - | 250W (Tc) | 50 mOhm @ 24A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH 1000V 1A TO-252
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存7,120 |
|
MOSFET (Metal Oxide) | 1000V | 1A (Tc) | 10V | 4.5V @ 50µA | 15.5nC @ 10V | 331pF @ 25V | ±20V | - | 50W (Tc) | 15 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
ON Semiconductor |
MOSFET N-CH 30V 89A SO-8FL
|
封装: 8-PowerTDFN, 5 Leads |
库存7,776 |
|
MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 17nC @ 4.5V | 1436pF @ 12V | ±20V | - | 3.7W (Ta), 112W (Tc) | 7 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 700V 9A TO220
|
封装: TO-220-3 |
库存26,028 |
|
MOSFET (Metal Oxide) | 700V | 9A (Tc) | 10V | 4.5V @ 250µA | 35nC @ 10V | 1630pF @ 25V | ±30V | - | 236W (Tc) | 1.2 Ohm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 20V 50A SMT
|
封装: PowerPAK? 1212-8 |
库存9,588 |
|
MOSFET (Metal Oxide) | 20V | 50A (Tc) | 2.5V, 4.5V | 1.2V @ 1mA | 70nC @ 10V | 2060pF @ 10V | ±12V | - | 3.7W (Ta), 52W (Tc) | 3.9 mOhm @ 14A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
||
Infineon Technologies |
MOSFET N-CH 150V 51A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,232 |
|
MOSFET (Metal Oxide) | 150V | 51A (Tc) | 10V | 5V @ 250µA | 89nC @ 10V | 2770pF @ 25V | ±30V | - | 3.8W (Ta), 230W (Tc) | 32 mOhm @ 36A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 20V 14A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存115,524 |
|
MOSFET (Metal Oxide) | 20V | 14A (Ta) | 4.5V, 10V | 1V @ 250µA (Min) | 32nC @ 4.5V | - | ±20V | - | 1.6W (Ta) | 4.5 mOhm @ 21A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
STMicroelectronics |
MOSFET N-CH 600V 13A TO-247
|
封装: TO-247-3 |
库存103,200 |
|
MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 4V @ 250µA | 35nC @ 10V | 1000pF @ 50V | ±25V | - | 110W (Tc) | 285 mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Nexperia USA Inc. |
MOSFET P-CH 20V 2.8A SOT-23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存223,128 |
|
MOSFET (Metal Oxide) | 20V | 2.8A (Ta) | 1.8V, 4.5V | 900mV @ 250µA | 7.7nC @ 4.5V | 744pF @ 20V | ±12V | - | 480mW (Ta) | 74 mOhm @ 2.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB (SOT23) | TO-236-3, SC-59, SOT-23-3 |
||
Diodes Incorporated |
MOSFET P-CH 30V 3.3A SOT23 T&R
|
封装: - |
库存6,549 |
|
MOSFET (Metal Oxide) | 30 V | 3.3A (Ta) | 4.5V, 10V | 2.1V @ 250µA | 2 nC @ 10 V | 300 pF @ 10 V | ±20V | - | 800mW (Ta) | 90mOhm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Rohm Semiconductor |
NCH 60V 14A POWER MOSFET: RS3L14
|
封装: - |
库存7,470 |
|
MOSFET (Metal Oxide) | 60 V | 14A (Ta) | 4.5V, 10V | 2.7V @ 500µA | 58 nC @ 10 V | 2980 pF @ 30 V | ±20V | - | 1.4W (Ta) | 6.5mOhm @ 14A, 10V | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Nexperia USA Inc. |
SMALL SIGNAL MOSFET FOR AUTOMOTI
|
封装: - |
库存9,000 |
|
MOSFET (Metal Oxide) | 20 V | 4.7A (Ta) | 2.5V, 8V | 1.3V @ 250µA | 16 nC @ 4.5 V | 1025 pF @ 10 V | ±12V | - | 660mW (Ta), 7.5W (Tc) | 46mOhm @ 4.7A, 8V | -55°C ~ 175°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
||
Diodes Incorporated |
MOSFET BVDSS: 31V~40V TO252 T&R
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 79A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 104 nC @ 10 V | 4497 pF @ 20 V | ±20V | - | 3.7W (Ta), 115W (Tc) | 11mOhm @ 9.8A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET BVDSS: 8V~24V PowerDI5060
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 83A (Tc) | 2.5V, 4.5V | 1V @ 250µA | 164 nC @ 10 V | 5392 pF @ 10 V | ±10V | - | 1.9W (Ta), 2.6W (Tc) | 6mOhm @ 15A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 600V 28A TO263
|
封装: - |
库存3,804 |
|
MOSFET (Metal Oxide) | 600 V | 28A (Tc) | 10V | 4.5V @ 250µA | 39 nC @ 10 V | 2993 pF @ 100 V | ±20V | - | 357W (Tc) | 125mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |