图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation |
MOSFET N-CH
|
封装: 18-BQFN Exposed Pad |
库存4,784 |
|
MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 4V @ 250µA | 33nC @ 10V | - | ±20V | - | 800mW (Ta), 25W (Tc) | 1.6 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-BQFN Exposed Pad |
||
IXYS |
MOSFET N-CH 4500V 0.2A TO263
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,664 |
|
MOSFET (Metal Oxide) | 4500V | 200mA (Tc) | 10V | 6.5V @ 250µA | 10.4nC @ 10V | 256pF @ 25V | ±20V | - | 113W (Tc) | 750 Ohm @ 10mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Renesas Electronics America |
MOSFET P-CH 20V 20A TO-252
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存150,372 |
|
MOSFET (Metal Oxide) | 20V | 20A (Tc) | 2.5V, 4.5V | - | 57nC @ 4.5V | 4400pF @ 10V | ±12V | - | 1W (Ta), 36W (Tc) | 7 mOhm @ 10A, 4.5V | 150°C (TJ) | Surface Mount | TO-252 (MP-3ZK) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 500V 12A ISOPLUS220
|
封装: ISOPLUS220? |
库存2,896 |
|
MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 4V @ 2.5mA | 120nC @ 10V | 2800pF @ 25V | ±20V | - | 140W (Tc) | 400 mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220? | ISOPLUS220? |
||
Infineon Technologies |
MOSFET N-CH 30V 65A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存6,352 |
|
MOSFET (Metal Oxide) | 30V | 65A (Tc) | 4.5V, 10V | 1V @ 250µA | 14nC @ 4.5V | 1030pF @ 15V | ±20V | - | 75W (Tc) | 10 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 1KV 18A ISOPLUS247
|
封装: ISOPLUS247? |
库存4,672 |
|
MOSFET (Metal Oxide) | 1000V | 18A (Tc) | 10V | 5V @ 4mA | 170nC @ 10V | 5900pF @ 25V | ±20V | - | 350W (Tc) | 500 mOhm @ 10.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247? | ISOPLUS247? |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH
|
封装: TO-220-3 Full Pack |
库存2,656 |
|
MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 5V @ 250µA | 50nC @ 10V | 2333pF @ 100V | ±30V | - | 50W (Tc) | 400 mOhm @ 5.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
||
Rohm Semiconductor |
MOSFET P-CH 20V 1A WEMT6
|
封装: SOT-563, SOT-666 |
库存3,264 |
|
MOSFET (Metal Oxide) | 20V | 1A (Ta) | 2.5V, 4.5V | 2V @ 1mA | 2.1nC @ 4.5V | 150pF @ 10V | ±12V | Schottky Diode (Body) | 700mW (Ta) | 390 mOhm @ 1A, 4.5V | 150°C (TJ) | Surface Mount | 6-WEMT | SOT-563, SOT-666 |
||
Diodes Incorporated |
MOSFET N-CH 12V 10.7A TSOT26
|
封装: SOT-23-6 Thin, TSOT-23-6 |
库存4,608 |
|
MOSFET (Metal Oxide) | 12V | 10.7A (Ta) | 1.2V, 4.5V | 800mV @ 250µA | 50.4nC @ 8V | 2588pF @ 10V | ±8V | - | 1.73W (Ta) | 10 mOhm @ 9.7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
||
ON Semiconductor |
MOSFET P-CH 20V 1.5A SOT563
|
封装: SOT-563, SOT-666 |
库存5,296 |
|
MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 1.8V, 4.5V | 1.4V @ 1mA | 1.7nC @ 4.5V | 120pF @ 10V | ±10V | - | 1W (Ta) | 241 mOhm @ 750mA, 4.5V | 150°C (TJ) | Surface Mount | SOT-563/SCH6 | SOT-563, SOT-666 |
||
Infineon Technologies |
MOSFET N-CH 650V 13.8A TO220
|
封装: TO-220-3 Full Pack |
库存2,320 |
|
MOSFET (Metal Oxide) | 650V | 13.8A (Tc) | 10V | 3.5V @ 440µA | 45nC @ 10V | 950pF @ 100V | ±20V | - | 32W (Tc) | 280 mOhm @ 4.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-FP | TO-220-3 Full Pack |
||
Nexperia USA Inc. |
MOSFET P-CH 50V 230MA 3DFN
|
封装: 3-XFDFN |
库存2,992 |
|
MOSFET (Metal Oxide) | 50V | 230mA (Ta) | 10V | 2.1V @ 250µA | 0.35nC @ 5V | 36pF @ 25V | ±20V | - | 360mW (Ta), 2.7W (Tc) | 7.5 Ohm @ 100mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 3-DFN1006B (0.6x1) | 3-XFDFN |
||
Vishay Siliconix |
MOSFET N-CH 30V 50A PPAK SO-8
|
封装: PowerPAK? SO-8 |
库存5,120 |
|
MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 117nC @ 10V | 6150pF @ 15V | +20V, -16V | - | 5W (Ta), 71.4W (Tc) | 2 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
STMicroelectronics |
MOSFET N-CH 500V 13A TO-220AB
|
封装: TO-220-3 |
库存8,364 |
|
MOSFET (Metal Oxide) | 500V | 13A (Tc) | 10V | 4V @ 250µA | 19.5nC @ 10V | 710pF @ 100V | ±25V | - | 110W (Tc) | 280 mOhm @ 6.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 200V 43A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存177,408 |
|
MOSFET (Metal Oxide) | 200V | 43A (Tc) | 10V | 5V @ 250µA | 91nC @ 10V | 2900pF @ 25V | ±20V | - | 3.8W (Ta), 300W (Tc) | 54 mOhm @ 26A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N CH 800V 6A TO220
|
封装: TO-220-3 |
库存18,444 |
|
MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 5V @ 100µA | 16.5nC @ 10V | 450pF @ 100V | ±30V | - | 110W (Tc) | 950 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 100V 100A TO220AB
|
封装: TO-220-3 |
库存21,054 |
|
MOSFET (Metal Oxide) | 100V | 100A (Tc) | 10V | 4V @ 1mA | 125nC @ 10V | 6686pF @ 50V | ±20V | - | 269W (Tc) | 12 mOhm @ 15A, 10V | - | Through Hole | TO-220AB | TO-220-3 |
||
STMicroelectronics |
MOSFET N-CH 950V 10A TO-220
|
封装: TO-220-3 |
库存390,000 |
|
MOSFET (Metal Oxide) | 950V | 10A (Tc) | 10V | 5V @ 100µA | 51nC @ 10V | 1620pF @ 100V | ±30V | - | 190W (Tc) | 850 mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
STMicroelectronics |
MOSFET N-CH 600V 7A TO-220
|
封装: TO-220-3 |
库存310,296 |
|
MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 4.5V @ 100µA | 53nC @ 10V | 1110pF @ 25V | ±30V | - | 125W (Tc) | 950 mOhm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 800V 3.9A TO-220
|
封装: TO-220-3 |
库存4,480 |
|
MOSFET (Metal Oxide) | 800V | 3.9A (Tc) | 10V | 5V @ 250µA | 25nC @ 10V | 880pF @ 25V | ±30V | - | 130W (Tc) | 3.6 Ohm @ 1.95A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 900V 36A TO-247
|
封装: TO-247-3 |
库存6,816 |
|
MOSFET (Metal Oxide) | 900V | 36A (Tc) | 10V | 3.5V @ 2.9mA | 270nC @ 10V | 6800pF @ 100V | ±20V | - | 417W (Tc) | 120 mOhm @ 26A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 40V 300A 8HSOF
|
封装: 8-PowerSFN |
库存33,840 |
|
MOSFET (Metal Oxide) | 40V | 300A (Tc) | 10V | 4V @ 230µA | 287nC @ 10V | 22945pF @ 25V | ±20V | - | 429W (Tc) | 0.77 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | H-PSOF-8-1 | 8-PowerSFN |
||
Infineon Technologies |
MOSFET P-CH 55V 19A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,760 |
|
MOSFET (Metal Oxide) | 55V | 19A (Tc) | 10V | 4V @ 250µA | 35nC @ 10V | 620pF @ 25V | ±20V | - | 3.8W (Ta), 68W (Tc) | 100 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Renesas |
2SJ529L06 - P-CHANNEL POWER MOSF
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 10A (Ta) | 4V, 10V | 2V @ 1mA | - | 580 pF @ 10 V | ±20V | - | 20W (Tc) | 160mOhm @ 5A, 10V | 150°C | Through Hole | DPAK(L)-(2) | TO-251-3 Long Leads, IPak, TO-251AB |
||
Microchip Technology |
MOSFET SIC 3300 V 25 MOHM TO-247
|
封装: - |
Request a Quote |
|
SiCFET (Silicon Carbide) | 3300 V | 104A (Tc) | 20V | 2.7V @ 7mA | 410 nC @ 20 V | 8720 pF @ 2640 V | +23V, -10V | - | - | 31mOhm @ 40A, 20V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 3.2A UFM
|
封装: - |
库存9,000 |
|
MOSFET (Metal Oxide) | 20 V | 3.2A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 4.7 nC @ 4.5 V | 290 pF @ 10 V | +6V, -8V | - | 500mW (Ta) | 93mOhm @ 1.5A, 4.5V | 150°C | Surface Mount | UFM | 3-SMD, Flat Lead |
||
Goford Semiconductor |
P-30V, -20A,RD<18M@-10V,VTH-1V~-
|
封装: - |
库存15,000 |
|
MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 2.5V @ 250µA | - | - | ±20V | - | 15W (Tc) | 15mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3.15x3.05) | 8-PowerVDFN |
||
Diodes Incorporated |
MOSFET BVDSS: 41V-60V POWERDI506
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 10V | 4V @ 250µA | 95.4 nC @ 10 V | 4556 pF @ 30 V | ±20V | - | 3.2W | 2.8mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 (Type K) | 8-PowerTDFN |
||
Panjit International Inc. |
30V N-CHANNEL ENHANCEMENT MODE M
|
封装: - |
库存13,398 |
|
MOSFET (Metal Oxide) | 30 V | 16A (Ta), 70A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 23 nC @ 4.5 V | 2436 pF @ 25 V | ±20V | - | 2W (Ta), 39W (Tc) | 3.8mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN3333-8 | 8-PowerVDFN |
||
Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 900mA (Tc) | 10V | 4V @ 250µA | 7.7 nC @ 10 V | 215 pF @ 25 V | ±30V | - | 2.5W (Ta), 28W (Tc) | 12Ohm @ 450mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | IPAK | TO-251-3 Short Leads, IPAK, TO-251AA |