页 96 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BSL806NL6327HTSA1	Infineon Technologies	MOSFET 2N-CH 20V 2.3A 6TSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 2.5V Vgs(th) (Max) @ Id: 750mV @ 11µA Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 2.5V Input Capacitance (Ciss) (Max) @ Vds: 259pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	封装: SOT-23-6 Thin, TSOT-23-6	库存7,568	Logic Level Gate	20V	2.3A	57 mOhm @ 2.3A, 2.5V	750mV @ 11µA	1.7nC @ 2.5V	259pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	PG-TSOP6-6
MMDF2C03HDR2G	ON Semiconductor	MOSFET N/P-CH 30V 4.1A/3A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.1A, 3A Rds On (Max) @ Id, Vgs: 70 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 24V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存4,976	Logic Level Gate	30V	4.1A, 3A	70 mOhm @ 3A, 10V	3V @ 250µA	16nC @ 10V	630pF @ 24V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
ZXMD63C03XTC	Diodes Incorporated	MOSFET N/P-CH 30V 8MSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V Power - Max: 1.04W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	库存4,720	Logic Level Gate	30V	-	135 mOhm @ 1.7A, 10V	1V @ 250µA (Min)	8nC @ 10V	290pF @ 25V	1.04W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
APTM20HM08FG	Microsemi Corporation	MOSFET 4N-CH 200V 208A SP6 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 208A Rds On (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V Power - Max: 781W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	封装: SP6	库存5,248	Standard	200V	208A	10 mOhm @ 104A, 10V	5V @ 5mA	280nC @ 10V	14400pF @ 25V	781W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTM20AM10STG	Microsemi Corporation	MOSFET 2N-CH 200V 175A SP4 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 175A Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V Power - Max: 694W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4	封装: SP4	库存4,224	Standard	200V	175A	12 mOhm @ 87.5A, 10V	5V @ 5mA	224nC @ 10V	13700pF @ 25V	694W	-40°C ~ 150°C (TJ)	Chassis Mount	SP4	SP4
APTC80TA15PG	Microsemi Corporation	MOSFET 6N-CH 800V 28A SP6P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 28A Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V Power - Max: 277W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	封装: SP6	库存5,776	Standard	800V	28A	150 mOhm @ 14A, 10V	3.9V @ 2mA	180nC @ 10V	4507pF @ 25V	277W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
SI4834CDY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V Power - Max: 2.9W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存4,784	Standard	30V	8A	20 mOhm @ 8A, 10V	3V @ 1mA	25nC @ 10V	950pF @ 15V	2.9W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI3585CDV-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V 3.9A 6TSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.9A, 2.1A Rds On (Max) @ Id, Vgs: 58 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V Power - Max: 1.4W, 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	封装: SOT-23-6 Thin, TSOT-23-6	库存701,904	Logic Level Gate	20V	3.9A, 2.1A	58 mOhm @ 2.5A, 4.5V	1.5V @ 250µA	4.8nC @ 10V	150pF @ 10V	1.4W, 1.3W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
DMP2100UCB9-7	Diodes Incorporated	MOSFET 2P-CH 20V 3A 9UWLB FET Type: 2 P-Channel (Dual) Common Source FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 100 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-UFBGA, WLBGA Supplier Device Package: U-WLB1515-9	封装: 9-UFBGA, WLBGA	库存103,860	Logic Level Gate	20V	3A	100 mOhm @ 1A, 4.5V	900mV @ 250µA	4.2nC @ 4.5V	310pF @ 10V	800mW	-55°C ~ 150°C (TJ)	Surface Mount	9-UFBGA, WLBGA	U-WLB1515-9
SI1553CDL-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA Rds On (Max) @ Id, Vgs: 390 mOhm @ 700mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V Power - Max: 340mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	封装: 6-TSSOP, SC-88, SOT-363	库存855,912	Logic Level Gate	20V	700mA, 500mA	390 mOhm @ 700mA, 4.5V	1.5V @ 250µA	1.8nC @ 10V	38pF @ 10V	340mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
NTTFD2D8N03P1E	onsemi	MOSFET 2N-CH 30V 16.1A 12WQFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 3V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 20.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V, 1521pF @ 15V Power - Max: 1.04W (Ta), 26W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-PowerWQFN Supplier Device Package: 12-WQFN (3.3x3.3)	封装: -	Request a Quote	-	30V	16.1A (Ta), 80A (Tc)	2.5mOhm @ 18A, 10V	3V @ 400µA	20.8nC @ 10V, 20.5nC @ 10V	1500pF @ 15V, 1521pF @ 15V	1.04W (Ta), 26W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	12-PowerWQFN	12-WQFN (3.3x3.3)
BUK9K20-80EX	Nexperia USA Inc.	MOSFET 2N-CH 80V 23A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 23A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3462pF @ 25V Power - Max: 68W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	封装: -	库存4,650	Logic Level Gate	80V	23A (Ta)	17mOhm @ 10A, 10V	2.1V @ 1mA	25.5nC @ 5V	3462pF @ 25V	68W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
SSM6N39TU-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 1.6A UF6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 119mOhm @ 1A, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V Power - Max: 500mW Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	封装: -	Request a Quote	-	20V	1.6A (Ta)	119mOhm @ 1A, 4V	1V @ 1mA	7.5nC @ 4V	260pF @ 10V	500mW	150°C	Surface Mount	6-SMD, Flat Leads	UF6
DMC3060LVTQ-7	Diodes Incorporated	MOSFET N/P-CH 30V 3.6A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 2.8A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V, 8.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 324pF @ 15V Power - Max: 830mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	封装: -	Request a Quote	-	30V	3.6A (Ta), 2.8A (Ta)	60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V	1.8V @ 250µA, 2.1V @ 250µA	11.3nC @ 10V, 8.6nC @ 10V	395pF @ 15V, 324pF @ 15V	830mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
DMT3009LEV-7	Diodes Incorporated	MOSFET 25V-30V POWERDI3333-8 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SSM10N961L-ELF	Toshiba Semiconductor and Storage	30V N-CH COMMON DRAIN FET RSS:9. FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 880mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 10-XFLGA, CSP Supplier Device Package: TCSPAG-341501	封装: -	库存28,470	-	30V	9A (Ta)	-	2.3V @ 250µA	17.3nC @ 10V	-	880mW (Ta)	150°C	Surface Mount	10-XFLGA, CSP	TCSPAG-341501
SI4500BDY-T1-E3	Vishay Siliconix	MOSFET N/P-CH 20V 6.6A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.6A, 3.8A Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	Request a Quote	Logic Level Gate	20V	6.6A, 3.8A	20mOhm @ 9.1A, 4.5V	1.5V @ 250µA	17nC @ 4.5V	-	1.3W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
FDMC9430L-F085	onsemi	MOSFET 2N-CH 40V 12A 8WDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 984pF @ 20V Power - Max: 11.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-WDFN (3x3)	封装: -	库存14,037	-	40V	12A	8mOhm @ 12A, 10V	3V @ 250µA	22nC @ 10V	984pF @ 20V	11.4W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-WDFN (3x3)
SP8K3FRATB	Rohm Semiconductor	MOSFET 2N-CH 30V 7A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Power - Max: 1.4W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	库存3,153	-	30V	7A (Ta)	24mOhm @ 7A, 10V	2.5V @ 1mA	11.8nC @ 5V	600pF @ 10V	1.4W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMTH6016LPDQ-13	Diodes Incorporated	MOSFET 2N-CH 60V 9.2A PWRDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V Power - Max: 2.5W (Ta), 37.5W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8	封装: -	库存231	-	60V	9.2A (Ta), 33.2A (Tc)	19mOhm @ 10A, 10V	2.5V @ 250µA	17nC @ 10V	864pF @ 30V	2.5W (Ta), 37.5W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8
DMTH6015LPDW-13	Diodes Incorporated	MOSFET 2N-CH 60V 9.4A PWRDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 36.3A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V Power - Max: 2.6W (Ta), 39.5W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type UXD)	封装: -	Request a Quote	-	60V	9.4A (Ta), 36.3A (Tc)	20mOhm @ 10A, 10V	2.5V @ 250µA	14.3nC @ 10V	825pF @ 30V	2.6W (Ta), 39.5W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8 (Type UXD)
NVMFD5C470NT1G	onsemi	MOSFET 2N-CH 40V 11.7A/36A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Power - Max: 3.1W (Ta), 28W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	封装: -	Request a Quote	-	40V	11.7A (Ta), 36A (Tc)	11.7mOhm @ 10A, 10V	3.5V @ 250µA	8nC @ 10V	420pF @ 25V	3.1W (Ta), 28W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
FX205-TL-E	Sanyo	MOSFET P-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMNH6035SPDW-13	Diodes Incorporated	MOSFET 2N-CH 60V 33A POWERDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V Power - Max: 2.4W (Ta), 68W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type R)	封装: -	库存7,500	-	60V	33A (Tc)	35mOhm @ 15A, 10V	3V @ 250µA	16nC @ 10V	879pF @ 25V	2.4W (Ta), 68W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-PowerTDFN	PowerDI5060-8 (Type R)
SI7252ADP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 100V 9.3A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28.7A (Tc) Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1266pF @ 50V Power - Max: 3.6W (Ta), 33.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	封装: -	库存35,154	-	100V	9.3A (Ta), 28.7A (Tc)	18.6mOhm @ 10A, 10V	4V @ 250µA	26.5nC @ 10V	1266pF @ 50V	3.6W (Ta), 33.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
TSM300NB06LDCR	Taiwan Semiconductor Corporation	MOSFET 2N-CH 60V 5A/24A 8PDFNU FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 30V Power - Max: 2W (Ta), 40W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PDFNU (5x6)	封装: -	Request a Quote	Logic Level Gate	60V	5A (Ta), 24A (Tc)	30mOhm @ 5A, 10V	2.5V @ 250µA	17nC @ 10V	966pF @ 30V	2W (Ta), 40W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-PDFNU (5x6)
DMN32D0LVQ-13	Diodes Incorporated	MOSFET 2N-CH 30V 0.68A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 680mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V Power - Max: 480mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: -	Request a Quote	-	30V	680mA (Ta)	1.2Ohm @ 100mA, 4V	1.2V @ 250µA	0.62nC @ 4.5V	44.8pF @ 15V	480mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
SQJ912BEP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	封装: -	库存13,311	-	40V	30A (Tc)	11mOhm @ 9A, 10V	2V @ 250µA	60nC @ 10V	3000pF @ 25V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
PJS6816_S1_00001	Panjit International Inc.	MOSFET 2N-CH 20V 5.2A SOT23-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V Power - Max: 1.25W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	封装: -	库存15,132	-	20V	5.2A (Ta)	29mOhm @ 5.2A, 4.5V	1.2V @ 250µA	7nC @ 4.5V	513pF @ 10V	1.25W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
XP3700MT	YAGEO XSEMI	MOSFET N AND P-CH 30V 11A 7.3A FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 7.3A(Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 11A, 10V, 45mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V, 9.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V, 960pF @ 15V Power - Max: 3.57W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: PMPAK® 5 x 6	封装: -	库存3,000	-	30V	11A (Ta), 7.3A(Ta)	18mOhm @ 11A, 10V, 45mOhm @ 7A, 10V	2V @ 250µA	8.3nC @ 4.5V, 9.6nC @ 4.5V	900pF @ 15V, 960pF @ 15V	3.57W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	PMPAK® 5 x 6

BSL806NL6327HTSA1

Infineon Technologies

MOSFET 2N-CH 20V 2.3A 6TSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 2.5V
Vgs(th) (Max) @ Id: 750mV @ 11µA
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 2.5V
Input Capacitance (Ciss) (Max) @ Vds: 259pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP6-6

封装: SOT-23-6 Thin, TSOT-23-6

库存7,568

Logic Level Gate

20V

2.3A

57 mOhm @ 2.3A, 2.5V

750mV @ 11µA

1.7nC @ 2.5V

259pF @ 10V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

PG-TSOP6-6

MMDF2C03HDR2G

ON Semiconductor

MOSFET N/P-CH 30V 4.1A/3A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.1A, 3A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 24V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存4,976

Logic Level Gate

30V

4.1A, 3A

70 mOhm @ 3A, 10V

3V @ 250µA

16nC @ 10V

630pF @ 24V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

ZXMD63C03XTC

Diodes Incorporated

MOSFET N/P-CH 30V 8MSOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 135 mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Power - Max: 1.04W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

库存4,720

Logic Level Gate

30V

-

135 mOhm @ 1.7A, 10V

1V @ 250µA (Min)

8nC @ 10V

290pF @ 25V

1.04W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

APTM20HM08FG

Microsemi Corporation

MOSFET 4N-CH 200V 208A SP6

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 208A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
Power - Max: 781W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

封装: SP6

库存5,248

Standard

200V

208A

10 mOhm @ 104A, 10V

5V @ 5mA

280nC @ 10V

14400pF @ 25V

781W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTM20AM10STG

Microsemi Corporation

MOSFET 2N-CH 200V 175A SP4

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 175A
Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
Power - Max: 694W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4

封装: SP4

库存4,224

Standard

200V

175A

12 mOhm @ 87.5A, 10V

5V @ 5mA

224nC @ 10V

13700pF @ 25V

694W

-40°C ~ 150°C (TJ)

Chassis Mount

SP4

APTC80TA15PG

Microsemi Corporation

MOSFET 6N-CH 800V 28A SP6P

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Power - Max: 277W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P

封装: SP6

库存5,776

Standard

800V

28A

150 mOhm @ 14A, 10V

3.9V @ 2mA

180nC @ 10V

4507pF @ 25V

277W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SP6-P

SI4834CDY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 8A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Power - Max: 2.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存4,784

Standard

30V

8A

20 mOhm @ 8A, 10V

3V @ 1mA

25nC @ 10V

950pF @ 15V

2.9W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI3585CDV-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 3.9A 6TSOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.9A, 2.1A
Rds On (Max) @ Id, Vgs: 58 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
Power - Max: 1.4W, 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

封装: SOT-23-6 Thin, TSOT-23-6

库存701,904

Logic Level Gate

20V

3.9A, 2.1A

58 mOhm @ 2.5A, 4.5V

1.5V @ 250µA

4.8nC @ 10V

150pF @ 10V

1.4W, 1.3W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

DMP2100UCB9-7

Diodes Incorporated

MOSFET 2P-CH 20V 3A 9UWLB

FET Type: 2 P-Channel (Dual) Common Source
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-UFBGA, WLBGA
Supplier Device Package: U-WLB1515-9

封装: 9-UFBGA, WLBGA

库存103,860

Logic Level Gate

20V

3A

100 mOhm @ 1A, 4.5V

900mV @ 250µA

4.2nC @ 4.5V

310pF @ 10V

800mW

-55°C ~ 150°C (TJ)

Surface Mount

9-UFBGA, WLBGA

U-WLB1515-9

SI1553CDL-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V SC70-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA
Rds On (Max) @ Id, Vgs: 390 mOhm @ 700mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V
Power - Max: 340mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

封装: 6-TSSOP, SC-88, SOT-363

库存855,912

Logic Level Gate

20V

700mA, 500mA

390 mOhm @ 700mA, 4.5V

1.5V @ 250µA

1.8nC @ 10V

38pF @ 10V

340mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

NTTFD2D8N03P1E

onsemi

MOSFET 2N-CH 30V 16.1A 12WQFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 3V @ 400µA
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 10V, 20.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V, 1521pF @ 15V
Power - Max: 1.04W (Ta), 26W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-PowerWQFN
Supplier Device Package: 12-WQFN (3.3x3.3)

封装: -

Request a Quote

-

30V

16.1A (Ta), 80A (Tc)

2.5mOhm @ 18A, 10V

3V @ 400µA

20.8nC @ 10V, 20.5nC @ 10V

1500pF @ 15V, 1521pF @ 15V

1.04W (Ta), 26W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

12-PowerWQFN

12-WQFN (3.3x3.3)

BUK9K20-80EX

Nexperia USA Inc.

MOSFET 2N-CH 80V 23A LFPAK56D

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 25.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 3462pF @ 25V
Power - Max: 68W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

封装: -

库存4,650

Logic Level Gate

80V

23A (Ta)

17mOhm @ 10A, 10V

2.1V @ 1mA

25.5nC @ 5V

3462pF @ 25V

68W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

SSM6N39TU-LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 1.6A UF6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 119mOhm @ 1A, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
Power - Max: 500mW
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: UF6

封装: -

Request a Quote

-

20V

1.6A (Ta)

119mOhm @ 1A, 4V

1V @ 1mA

7.5nC @ 4V

260pF @ 10V

500mW

150°C

Surface Mount

6-SMD, Flat Leads

UF6

DMC3060LVTQ-7

Diodes Incorporated

MOSFET N/P-CH 30V 3.6A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V, 8.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 324pF @ 15V
Power - Max: 830mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

封装: -

Request a Quote

-

30V

3.6A (Ta), 2.8A (Ta)

60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V

1.8V @ 250µA, 2.1V @ 250µA

11.3nC @ 10V, 8.6nC @ 10V

395pF @ 15V, 324pF @ 15V

830mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

DMT3009LEV-7

Diodes Incorporated

MOSFET 25V-30V POWERDI3333-8

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

SSM10N961L-ELF

Toshiba Semiconductor and Storage

30V N-CH COMMON DRAIN FET RSS:9.

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 880mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 10-XFLGA, CSP
Supplier Device Package: TCSPAG-341501

封装: -

库存28,470

-

30V

9A (Ta)

-

2.3V @ 250µA

17.3nC @ 10V

-

880mW (Ta)

150°C

Surface Mount

10-XFLGA, CSP

TCSPAG-341501

SI4500BDY-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V 6.6A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 3.8A
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

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Logic Level Gate

20V

6.6A, 3.8A

20mOhm @ 9.1A, 4.5V

1.5V @ 250µA

17nC @ 4.5V

-

1.3W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

FDMC9430L-F085

onsemi

MOSFET 2N-CH 40V 12A 8WDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 984pF @ 20V
Power - Max: 11.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-WDFN (3x3)

封装: -

库存14,037

-

40V

12A

8mOhm @ 12A, 10V

3V @ 250µA

22nC @ 10V

984pF @ 20V

11.4W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-WDFN (3x3)

SP8K3FRATB

Rohm Semiconductor

MOSFET 2N-CH 30V 7A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Power - Max: 1.4W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

库存3,153

-

30V

7A (Ta)

24mOhm @ 7A, 10V

2.5V @ 1mA

11.8nC @ 5V

600pF @ 10V

1.4W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMTH6016LPDQ-13

Diodes Incorporated

MOSFET 2N-CH 60V 9.2A PWRDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 33.2A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 30V
Power - Max: 2.5W (Ta), 37.5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8

封装: -

库存231

-

60V

9.2A (Ta), 33.2A (Tc)

19mOhm @ 10A, 10V

2.5V @ 250µA

17nC @ 10V

864pF @ 30V

2.5W (Ta), 37.5W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8

DMTH6015LPDW-13

Diodes Incorporated

MOSFET 2N-CH 60V 9.4A PWRDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 36.3A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V
Power - Max: 2.6W (Ta), 39.5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type UXD)

封装: -

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-

60V

9.4A (Ta), 36.3A (Tc)

20mOhm @ 10A, 10V

2.5V @ 250µA

14.3nC @ 10V

825pF @ 30V

2.6W (Ta), 39.5W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8 (Type UXD)

NVMFD5C470NT1G

onsemi

MOSFET 2N-CH 40V 11.7A/36A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Power - Max: 3.1W (Ta), 28W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

封装: -

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-

40V

11.7A (Ta), 36A (Tc)

11.7mOhm @ 10A, 10V

3.5V @ 250µA

8nC @ 10V

420pF @ 25V

3.1W (Ta), 28W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

FX205-TL-E

Sanyo

MOSFET P-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

DMNH6035SPDW-13

Diodes Incorporated

MOSFET 2N-CH 60V 33A POWERDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V
Power - Max: 2.4W (Ta), 68W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type R)

封装: -

库存7,500

-

60V

33A (Tc)

35mOhm @ 15A, 10V

3V @ 250µA

16nC @ 10V

879pF @ 25V

2.4W (Ta), 68W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

8-PowerTDFN

PowerDI5060-8 (Type R)

SI7252ADP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 100V 9.3A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28.7A (Tc)
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1266pF @ 50V
Power - Max: 3.6W (Ta), 33.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

封装: -

库存35,154

-

100V

9.3A (Ta), 28.7A (Tc)

18.6mOhm @ 10A, 10V

4V @ 250µA

26.5nC @ 10V

1266pF @ 50V

3.6W (Ta), 33.8W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

TSM300NB06LDCR

Taiwan Semiconductor Corporation

MOSFET 2N-CH 60V 5A/24A 8PDFNU

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 30V
Power - Max: 2W (Ta), 40W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PDFNU (5x6)

封装: -

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Logic Level Gate

60V

5A (Ta), 24A (Tc)

30mOhm @ 5A, 10V

2.5V @ 250µA

17nC @ 10V

966pF @ 30V

2W (Ta), 40W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-PDFNU (5x6)

DMN32D0LVQ-13

Diodes Incorporated

MOSFET 2N-CH 30V 0.68A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V
Power - Max: 480mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: -

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-

30V

680mA (Ta)

1.2Ohm @ 100mA, 4V

1.2V @ 250µA

0.62nC @ 4.5V

44.8pF @ 15V

480mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

SQJ912BEP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

封装: -

库存13,311

-

40V

30A (Tc)

11mOhm @ 9A, 10V

2V @ 250µA

60nC @ 10V

3000pF @ 25V

48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

PJS6816_S1_00001

Panjit International Inc.

MOSFET 2N-CH 20V 5.2A SOT23-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 513pF @ 10V
Power - Max: 1.25W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6

封装: -

库存15,132

-

20V

5.2A (Ta)

29mOhm @ 5.2A, 4.5V

1.2V @ 250µA

7nC @ 4.5V

513pF @ 10V

1.25W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

XP3700MT

YAGEO XSEMI

MOSFET N AND P-CH 30V 11A 7.3A

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 7.3A(Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 11A, 10V, 45mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V, 9.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V, 960pF @ 15V
Power - Max: 3.57W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: PMPAK® 5 x 6

封装: -

库存3,000

-

30V

11A (Ta), 7.3A(Ta)

18mOhm @ 11A, 10V, 45mOhm @ 7A, 10V

2V @ 250µA

8.3nC @ 4.5V, 9.6nC @ 4.5V

900pF @ 15V, 960pF @ 15V

3.57W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerLDFN

PMPAK® 5 x 6