页 93 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRFI4024H-117P	Infineon Technologies	MOSFET 2N-CH 55V 11A TO-220FP-5 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 11A Rds On (Max) @ Id, Vgs: 60 mOhm @ 7.7A, 10V Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 50V Power - Max: 14W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-5 Full Pack Supplier Device Package: TO-220-5 Full-Pak	封装: TO-220-5 Full Pack	库存9,636	Standard	55V	11A	60 mOhm @ 7.7A, 10V	4V @ 25µA	13nC @ 10V	320pF @ 50V	14W	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5 Full Pack	TO-220-5 Full-Pak
TPC8212-H(TE12LQ,M	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 6A SOP8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 21 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V Power - Max: 450mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP (5.5x6.0)	封装: 8-SOIC (0.173", 4.40mm Width)	库存3,280	Logic Level Gate	30V	6A	21 mOhm @ 3A, 10V	2.3V @ 1mA	16nC @ 10V	840pF @ 10V	450mW	150°C (TJ)	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP (5.5x6.0)
SI5511DC-T1-E3	Vishay Siliconix	MOSFET N/P-CH 30V 4A 1206-8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.8A, 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V Power - Max: 3.1W, 2.6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	封装: 8-SMD, Flat Lead	库存108,000	Logic Level Gate	30V	4A, 3.6A	55 mOhm @ 4.8A, 4.5V	2V @ 250µA	7.1nC @ 5V	435pF @ 15V	3.1W, 2.6W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
SI4330DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 6.6A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.6A Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 8.7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存666,552	Logic Level Gate	30V	6.6A	16.5 mOhm @ 8.7A, 10V	3V @ 250µA	20nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDC6036P	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 5A 6SSOT FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 44 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 992pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SSOT Flat-lead, SuperSOT?-6 FLMP Supplier Device Package: SuperSOT?-6	封装: 6-SSOT Flat-lead, SuperSOT?-6 FLMP	库存2,242,020	Logic Level Gate	20V	5A	44 mOhm @ 5A, 4.5V	1.5V @ 250µA	14nC @ 4.5V	992pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	6-SSOT Flat-lead, SuperSOT?-6 FLMP	SuperSOT?-6
IPG20N06S4L11AATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 11.2 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 28µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V Power - Max: 65W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	封装: 8-PowerVDFN	库存4,096	Logic Level Gate	60V	20A	11.2 mOhm @ 17A, 10V	2.2V @ 28µA	53nC @ 10V	4020pF @ 25V	65W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-10
APTM10DUM02G	Microsemi Corporation	MOSFET 2N-CH 100V 495A SP6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 495A Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V Vgs(th) (Max) @ Id: 4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V Power - Max: 1250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	封装: SP6	库存3,472	Standard	100V	495A	2.5 mOhm @ 200A, 10V	4V @ 10mA	1360nC @ 10V	40000pF @ 25V	1250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
APTC90HM60T3G	Microsemi Corporation	MOSFET 4N-CH 900V 59A SP3 FET Type: 4 N-Channel (H-Bridge) FET Feature: Super Junction Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 59A Rds On (Max) @ Id, Vgs: 60 mOhm @ 52A, 10V Vgs(th) (Max) @ Id: 3.5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V Power - Max: 462W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	封装: SP3	库存7,344	Super Junction	900V	59A	60 mOhm @ 52A, 10V	3.5V @ 6mA	540nC @ 10V	13600pF @ 100V	462W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
APTC90AM60T1G	Microsemi Corporation	MOSFET 2N-CH 900V 59A SP1 FET Type: 2 N-Channel (Half Bridge) FET Feature: Super Junction Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 59A Rds On (Max) @ Id, Vgs: 60 mOhm @ 52A, 10V Vgs(th) (Max) @ Id: 3.5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V Power - Max: 462W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	封装: SP1	库存3,488	Super Junction	900V	59A	60 mOhm @ 52A, 10V	3.5V @ 6mA	540nC @ 10V	13600pF @ 100V	462W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
ALD210804PCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 0.08A 16DIP FET Type: 4 N-Channel, Matched Pair FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 80mA Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	封装: 16-DIP (0.300", 7.62mm)	库存3,808	Logic Level Gate	10.6V	80mA	-	20mV @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
SIZ700DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 16A PPAK 1212-8 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 16A Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V Power - Max: 2.36W, 2.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerPair? Supplier Device Package: 6-PowerPair?	封装: 6-PowerPair?	库存2,414,892	Standard	20V	16A	8.6 mOhm @ 15A, 10V	2.2V @ 250µA	35nC @ 10V	1300pF @ 10V	2.36W, 2.8W	-55°C ~ 150°C (TJ)	Surface Mount	6-PowerPair?	6-PowerPair?
SI1033X-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 0.145A SC89 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 145mA Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	封装: SOT-563, SOT-666	库存36,600	Logic Level Gate	20V	145mA	8 Ohm @ 150mA, 4.5V	1.2V @ 250µA	1.5nC @ 4.5V	-	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
EFC4627R-TR	ON Semiconductor	MOSFET 2N-CH 12V 6A CSP4 FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: 150°C (TJ) Mounting Type: - Package / Case: 4-XFBGA, FCBGA Supplier Device Package: 4-EFCP (1.01x1.01)	封装: 4-XFBGA, FCBGA	库存3,184	Logic Level Gate, 2.5V Drive	-	-	-	-	13.4nC @ 4.5V	-	1.4W	150°C (TJ)	-	4-XFBGA, FCBGA	4-EFCP (1.01x1.01)
PMDT670UPE,115	Nexperia USA Inc.	MOSFET 2P-CH 20V 0.55A SOT666 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 550mA Rds On (Max) @ Id, Vgs: 850 mOhm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 10V Power - Max: 330mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	封装: SOT-563, SOT-666	库存5,568	Logic Level Gate	20V	550mA	850 mOhm @ 400mA, 4.5V	1.3V @ 250µA	1.14nC @ 4.5V	87pF @ 10V	330mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-666
NX3008PBKV,115	Nexperia USA Inc.	MOSFET 2P-CH 30V 0.22A SOT666 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 220mA Rds On (Max) @ Id, Vgs: 4.1 Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	封装: SOT-563, SOT-666	库存4,432	Logic Level Gate	30V	220mA	4.1 Ohm @ 200mA, 4.5V	1.1V @ 250µA	0.72nC @ 4.5V	46pF @ 15V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-666
NX3020NAKV,115	Nexperia USA Inc.	MOSFET 2N-CH 30V 0.2A SOT666 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Power - Max: 375mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	封装: SOT-563, SOT-666	库存3,488	Logic Level Gate	30V	200mA	4.5 Ohm @ 100mA, 10V	1.5V @ 250µA	0.44nC @ 4.5V	13pF @ 10V	375mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-666
ZXMN2AMCTA	Diodes Incorporated	MOSFET 2N-CH 20V 2.9A DFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A Rds On (Max) @ Id, Vgs: 120 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 299pF @ 15V Power - Max: 1.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-DFN (3x2)	封装: 8-WDFN Exposed Pad	库存36,000	Logic Level Gate	20V	2.9A	120 mOhm @ 4A, 4.5V	3V @ 250µA	3.1nC @ 4.5V	299pF @ 15V	1.7W	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN Exposed Pad	8-DFN (3x2)
DMN63D8LV-7	Diodes Incorporated	MOSFET 2N-CH 30V 0.26A SOT563 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 260mA Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Power - Max: 450mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: SOT-563, SOT-666	库存48,624	Logic Level Gate	30V	260mA	2.8 Ohm @ 250mA, 10V	1.5V @ 250µA	0.87nC @ 10V	22pF @ 25V	450mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
SISB46DN-T1-GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 40V 1212-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 11.71 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V Power - Max: 23W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	封装: PowerPAK? 1212-8 Dual	库存22,164	Standard	40V	34A (Tc)	11.71 mOhm @ 5A, 10V	2.2V @ 250µA	11nC @ 4.5V	1100pF @ 20V	23W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
CSD87381PT	Texas Instruments	MOSFET 2N-CH 30V 15A 5PTAB FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A Rds On (Max) @ Id, Vgs: 16.3 mOhm @ 8A, 8V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 564pF @ 15V Power - Max: 4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 5-LGA Supplier Device Package: 5-PTAB (3x2.5)	封装: 5-LGA	库存25,554	Logic Level Gate	30V	15A	16.3 mOhm @ 8A, 8V	1.9V @ 250µA	5nC @ 4.5V	564pF @ 15V	4W	-55°C ~ 150°C (TJ)	Surface Mount	5-LGA	5-PTAB (3x2.5)
SI6562CDQ-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V 6.7A 8-TSSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.7A, 6.1A Rds On (Max) @ Id, Vgs: 22 mOhm @ 5.7A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V Power - Max: 1.6W, 1.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存13,068	Logic Level Gate	20V	6.7A, 6.1A	22 mOhm @ 5.7A, 4.5V	1.5V @ 250µA	23nC @ 10V	850pF @ 10V	1.6W, 1.7W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
MSCSM170AM11CT3AG	Microchip Technology	SIC 2N-CH 1700V 240A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V Vgs(th) (Max) @ Id: 3.2V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V Power - Max: 1.14kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	库存12	-	1700V (1.7kV)	240A (Tc)	11.3mOhm @ 120A, 20V	3.2V @ 10mA	712nC @ 20V	13200pF @ 1000V	1.14kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
NVMFD5C470NWFT1G	onsemi	MOSFET 2N-CH 40V 11.7A/36A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Power - Max: 3.1W (Ta), 28W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	封装: -	库存4,500	-	40V	11.7A (Ta), 36A (Tc)	11.7mOhm @ 10A, 10V	3.5V @ 250µA	8nC @ 10V	420pF @ 25V	3.1W (Ta), 28W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
NDH8502P	Fairchild Semiconductor	MOSFET 2P-CH 30V 2.2A SUPERSOT8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V Power - Max: 800mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSOP (0.130", 3.30mm Width) Supplier Device Package: SuperSOT™-8	封装: -	Request a Quote	-	30V	2.2A (Ta)	110mOhm @ 2.2A, 10V	3V @ 250µA	14.5nC @ 10V	340pF @ 15V	800mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-TSOP (0.130", 3.30mm Width)	SuperSOT™-8
SI4946CDY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 60V 5.2A/6.1A 8SO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 6.1A (Tc) Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V Power - Max: 2W (Ta), 2.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: -	Request a Quote	-	60V	5.2A (Ta), 6.1A (Tc)	40.9mOhm @ 5.2A, 10V	3V @ 250µA	10nC @ 10V	350pF @ 30V	2W (Ta), 2.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SQ1902AEL-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 20V 0.78A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 780mA (Tc) Rds On (Max) @ Id, Vgs: 415mOhm @ 660mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V Power - Max: 430mW Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Dual Supplier Device Package: PowerPAK® SC-70-6 Dual	封装: -	Request a Quote	-	20V	780mA (Tc)	415mOhm @ 660mA, 4.5V	1.5V @ 250µA	1.2nC @ 4.5V	75pF @ 10V	430mW	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SC-70-6 Dual	PowerPAK® SC-70-6 Dual
SP8M51FRATB	Rohm Semiconductor	MOSFET N/P-CH 100V 3A/2.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1550pF @ 25V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	Request a Quote	-	100V	3A (Ta), 2.5A (Ta)	170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V	2.5V @ 1mA	8.5nC @ 5V, 12.5nC @ 5V	610pF @ 10V, 1550pF @ 25V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SI4511DY-T1-E3	Vishay Siliconix	MOSFET N/P-CH 20V 7.2A 8-SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.2A, 4.6A Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.6A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	Request a Quote	Logic Level Gate	20V	7.2A, 4.6A	14.5mOhm @ 9.6A, 10V	1.8V @ 250µA	18nC @ 4.5V	-	1.1W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
PSMN4R2-40VSHX	Nexperia USA Inc.	MOSFET 2N-CH 40V 98A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 98A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2590pF @ 25V Power - Max: 85W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	封装: -	库存5,436	-	40V	98A (Ta)	4.2mOhm @ 20A, 10V	3.6V @ 1mA	37nC @ 10V	2590pF @ 25V	85W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
DMN3060LVT-13	Diodes Incorporated	MOSFET 2N-CH 30V 3.6A TSOT23-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-23-6	封装: -	Request a Quote	-	30V	3.6A (Ta)	60mOhm @ 3.1A, 10V	1.8V @ 250µA	11.3nC @ 10V	395pF @ 15V	830mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-23-6

IRFI4024H-117P

Infineon Technologies

MOSFET 2N-CH 55V 11A TO-220FP-5

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 7.7A, 10V
Vgs(th) (Max) @ Id: 4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 50V
Power - Max: 14W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-5 Full Pack
Supplier Device Package: TO-220-5 Full-Pak

封装: TO-220-5 Full Pack

库存9,636

Standard

55V

11A

60 mOhm @ 7.7A, 10V

4V @ 25µA

13nC @ 10V

320pF @ 50V

14W

-55°C ~ 150°C (TJ)

Through Hole

TO-220-5 Full Pack

TO-220-5 Full-Pak

TPC8212-H(TE12LQ,M

Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 6A SOP8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V
Power - Max: 450mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP (5.5x6.0)

封装: 8-SOIC (0.173", 4.40mm Width)

库存3,280

Logic Level Gate

30V

6A

21 mOhm @ 3A, 10V

2.3V @ 1mA

16nC @ 10V

840pF @ 10V

450mW

150°C (TJ)

Surface Mount

8-SOIC (0.173", 4.40mm Width)

8-SOP (5.5x6.0)

SI5511DC-T1-E3

Vishay Siliconix

MOSFET N/P-CH 30V 4A 1206-8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.6A
Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Power - Max: 3.1W, 2.6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

封装: 8-SMD, Flat Lead

库存108,000

Logic Level Gate

30V

4A, 3.6A

55 mOhm @ 4.8A, 4.5V

2V @ 250µA

7.1nC @ 5V

435pF @ 15V

3.1W, 2.6W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

1206-8 ChipFET?

SI4330DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 6.6A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 8.7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存666,552

Logic Level Gate

30V

6.6A

16.5 mOhm @ 8.7A, 10V

3V @ 250µA

20nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDC6036P

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 5A 6SSOT

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 44 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 992pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SSOT Flat-lead, SuperSOT?-6 FLMP
Supplier Device Package: SuperSOT?-6

封装: 6-SSOT Flat-lead, SuperSOT?-6 FLMP

库存2,242,020

Logic Level Gate

20V

5A

44 mOhm @ 5A, 4.5V

1.5V @ 250µA

14nC @ 4.5V

992pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

6-SSOT Flat-lead, SuperSOT?-6 FLMP

SuperSOT?-6

IPG20N06S4L11AATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 11.2 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
Power - Max: 65W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-10

封装: 8-PowerVDFN

库存4,096

Logic Level Gate

60V

20A

11.2 mOhm @ 17A, 10V

2.2V @ 28µA

53nC @ 10V

4020pF @ 25V

65W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-10

APTM10DUM02G

Microsemi Corporation

MOSFET 2N-CH 100V 495A SP6

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 495A
Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V
Vgs(th) (Max) @ Id: 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

封装: SP6

库存3,472

Standard

100V

495A

2.5 mOhm @ 200A, 10V

4V @ 10mA

1360nC @ 10V

40000pF @ 25V

1250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

APTC90HM60T3G

Microsemi Corporation

MOSFET 4N-CH 900V 59A SP3

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 59A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 52A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V
Power - Max: 462W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

封装: SP3

库存7,344

Super Junction

900V

59A

60 mOhm @ 52A, 10V

3.5V @ 6mA

540nC @ 10V

13600pF @ 100V

462W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

APTC90AM60T1G

Microsemi Corporation

MOSFET 2N-CH 900V 59A SP1

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 59A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 52A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V
Power - Max: 462W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

封装: SP1

库存3,488

Super Junction

900V

59A

60 mOhm @ 52A, 10V

3.5V @ 6mA

540nC @ 10V

13600pF @ 100V

462W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

ALD210804PCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 0.08A 16DIP

FET Type: 4 N-Channel, Matched Pair
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 80mA
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 20mV @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP

封装: 16-DIP (0.300", 7.62mm)

库存3,808

Logic Level Gate

10.6V

80mA

-

20mV @ 10µA

-

500mW

0°C ~ 70°C (TJ)

Through Hole

16-DIP (0.300", 7.62mm)

16-PDIP

SIZ700DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 16A PPAK 1212-8

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 10V
Power - Max: 2.36W, 2.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair?
Supplier Device Package: 6-PowerPair?

封装: 6-PowerPair?

库存2,414,892

Standard

20V

16A

8.6 mOhm @ 15A, 10V

2.2V @ 250µA

35nC @ 10V

1300pF @ 10V

2.36W, 2.8W

-55°C ~ 150°C (TJ)

Surface Mount

6-PowerPair?

SI1033X-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 0.145A SC89

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 145mA
Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

封装: SOT-563, SOT-666

库存36,600

Logic Level Gate

20V

145mA

8 Ohm @ 150mA, 4.5V

1.2V @ 250µA

1.5nC @ 4.5V

-

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

EFC4627R-TR

ON Semiconductor

MOSFET 2N-CH 12V 6A CSP4

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 13.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: 150°C (TJ)
Mounting Type: -
Package / Case: 4-XFBGA, FCBGA
Supplier Device Package: 4-EFCP (1.01x1.01)

封装: 4-XFBGA, FCBGA

库存3,184

Logic Level Gate, 2.5V Drive

-

13.4nC @ 4.5V

-

1.4W

150°C (TJ)

-

4-XFBGA, FCBGA

4-EFCP (1.01x1.01)

PMDT670UPE,115

Nexperia USA Inc.

MOSFET 2P-CH 20V 0.55A SOT666

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 550mA
Rds On (Max) @ Id, Vgs: 850 mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 10V
Power - Max: 330mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666

封装: SOT-563, SOT-666

库存5,568

Logic Level Gate

20V

550mA

850 mOhm @ 400mA, 4.5V

1.3V @ 250µA

1.14nC @ 4.5V

87pF @ 10V

330mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-666

NX3008PBKV,115

Nexperia USA Inc.

MOSFET 2P-CH 30V 0.22A SOT666

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 220mA
Rds On (Max) @ Id, Vgs: 4.1 Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.72nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 15V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666

封装: SOT-563, SOT-666

库存4,432

Logic Level Gate

30V

220mA

4.1 Ohm @ 200mA, 4.5V

1.1V @ 250µA

0.72nC @ 4.5V

46pF @ 15V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-666

NX3020NAKV,115

Nexperia USA Inc.

MOSFET 2N-CH 30V 0.2A SOT666

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Power - Max: 375mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666

封装: SOT-563, SOT-666

库存3,488

Logic Level Gate

30V

200mA

4.5 Ohm @ 100mA, 10V

1.5V @ 250µA

0.44nC @ 4.5V

13pF @ 10V

375mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-666

ZXMN2AMCTA

Diodes Incorporated

MOSFET 2N-CH 20V 2.9A DFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Rds On (Max) @ Id, Vgs: 120 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 299pF @ 15V
Power - Max: 1.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-DFN (3x2)

封装: 8-WDFN Exposed Pad

库存36,000

Logic Level Gate

20V

2.9A

120 mOhm @ 4A, 4.5V

3V @ 250µA

3.1nC @ 4.5V

299pF @ 15V

1.7W

-55°C ~ 150°C (TJ)

Surface Mount

8-WDFN Exposed Pad

8-DFN (3x2)

DMN63D8LV-7

Diodes Incorporated

MOSFET 2N-CH 30V 0.26A SOT563

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 260mA
Rds On (Max) @ Id, Vgs: 2.8 Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
Power - Max: 450mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: SOT-563, SOT-666

库存48,624

Logic Level Gate

30V

260mA

2.8 Ohm @ 250mA, 10V

1.5V @ 250µA

0.87nC @ 10V

22pF @ 25V

450mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

SISB46DN-T1-GE3

Vishay Siliconix

MOSFET ARRAY 2N-CH 40V 1212-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 11.71 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V
Power - Max: 23W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

封装: PowerPAK? 1212-8 Dual

库存22,164

Standard

40V

34A (Tc)

11.71 mOhm @ 5A, 10V

2.2V @ 250µA

11nC @ 4.5V

1100pF @ 20V

23W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

CSD87381PT

Texas Instruments

MOSFET 2N-CH 30V 15A 5PTAB

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Rds On (Max) @ Id, Vgs: 16.3 mOhm @ 8A, 8V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 564pF @ 15V
Power - Max: 4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-LGA
Supplier Device Package: 5-PTAB (3x2.5)

封装: 5-LGA

库存25,554

Logic Level Gate

30V

15A

16.3 mOhm @ 8A, 8V

1.9V @ 250µA

5nC @ 4.5V

564pF @ 15V

4W

-55°C ~ 150°C (TJ)

Surface Mount

5-LGA

5-PTAB (3x2.5)

SI6562CDQ-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 6.7A 8-TSSOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.7A, 6.1A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 5.7A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
Power - Max: 1.6W, 1.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存13,068

Logic Level Gate

20V

6.7A, 6.1A

22 mOhm @ 5.7A, 4.5V

1.5V @ 250µA

23nC @ 10V

850pF @ 10V

1.6W, 1.7W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

MSCSM170AM11CT3AG

Microchip Technology

SIC 2N-CH 1700V 240A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V
Power - Max: 1.14kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

库存12

-

1700V (1.7kV)

240A (Tc)

11.3mOhm @ 120A, 20V

3.2V @ 10mA

712nC @ 20V

13200pF @ 1000V

1.14kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

NVMFD5C470NWFT1G

onsemi

MOSFET 2N-CH 40V 11.7A/36A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Power - Max: 3.1W (Ta), 28W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

封装: -

库存4,500

-

40V

11.7A (Ta), 36A (Tc)

11.7mOhm @ 10A, 10V

3.5V @ 250µA

8nC @ 10V

420pF @ 25V

3.1W (Ta), 28W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

NDH8502P

Fairchild Semiconductor

MOSFET 2P-CH 30V 2.2A SUPERSOT8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V
Power - Max: 800mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSOP (0.130", 3.30mm Width)
Supplier Device Package: SuperSOT™-8

封装: -

Request a Quote

-

30V

2.2A (Ta)

110mOhm @ 2.2A, 10V

3V @ 250µA

14.5nC @ 10V

340pF @ 15V

800mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-TSOP (0.130", 3.30mm Width)

SuperSOT™-8

SI4946CDY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 60V 5.2A/6.1A 8SO

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V
Power - Max: 2W (Ta), 2.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: -

Request a Quote

-

60V

5.2A (Ta), 6.1A (Tc)

40.9mOhm @ 5.2A, 10V

3V @ 250µA

10nC @ 10V

350pF @ 30V

2W (Ta), 2.8W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SQ1902AEL-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 20V 0.78A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 780mA (Tc)
Rds On (Max) @ Id, Vgs: 415mOhm @ 660mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Power - Max: 430mW
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual

封装: -

Request a Quote

-

20V

780mA (Tc)

415mOhm @ 660mA, 4.5V

1.5V @ 250µA

1.2nC @ 4.5V

75pF @ 10V

430mW

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SC-70-6 Dual

SP8M51FRATB

Rohm Semiconductor

MOSFET N/P-CH 100V 3A/2.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1550pF @ 25V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

Request a Quote

-

100V

3A (Ta), 2.5A (Ta)

170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V

2.5V @ 1mA

8.5nC @ 5V, 12.5nC @ 5V

610pF @ 10V, 1550pF @ 25V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SI4511DY-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V 7.2A 8-SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.2A, 4.6A
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

Request a Quote

Logic Level Gate

20V

7.2A, 4.6A

14.5mOhm @ 9.6A, 10V

1.8V @ 250µA

18nC @ 4.5V

-

1.1W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

PSMN4R2-40VSHX

Nexperia USA Inc.

MOSFET 2N-CH 40V 98A LFPAK56D

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 98A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2590pF @ 25V
Power - Max: 85W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

封装: -

库存5,436

-

40V

98A (Ta)

4.2mOhm @ 20A, 10V

3.6V @ 1mA

37nC @ 10V

2590pF @ 25V

85W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

DMN3060LVT-13

Diodes Incorporated

MOSFET 2N-CH 30V 3.6A TSOT23-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-23-6

封装: -

Request a Quote

-

30V

3.6A (Ta)

60mOhm @ 3.1A, 10V

1.8V @ 250µA

11.3nC @ 10V

395pF @ 15V

830mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-23-6