页 94 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AO9926BL_101	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.6A Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.6A, 10V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,952	Standard	20V	7.6A	23 mOhm @ 7.6A, 10V	1.1V @ 250µA	12.5nC @ 10V	630pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SI4942DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 40V 5.3A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存2,208	Logic Level Gate	40V	5.3A	21 mOhm @ 7.4A, 10V	3V @ 250µA	32nC @ 10V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4539ADY-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 30V 4.4A 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.4A, 3.7A Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存435,036	Logic Level Gate	30V	4.4A, 3.7A	36 mOhm @ 5.9A, 10V	1V @ 250µA (Min)	20nC @ 10V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI1557DH-T1-E3	Vishay Siliconix	MOSFET N/P-CH 12V 1.2A SC70-6 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 1.2A, 770mA Rds On (Max) @ Id, Vgs: 235 mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 470mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	封装: 6-TSSOP, SC-88, SOT-363	库存72,000	Logic Level Gate	12V	1.2A, 770mA	235 mOhm @ 1.2A, 4.5V	1V @ 100µA	1.2nC @ 4.5V	-	470mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6 (SOT-363)
NTLJD2104PTAG	ON Semiconductor	MOSFET 2P-CH 12V 2.4A 6WDFN FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2.4A Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 467pF @ 6V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WDFN (2x2)	封装: 6-WDFN Exposed Pad	库存5,248	Logic Level Gate	12V	2.4A	90 mOhm @ 3A, 4.5V	800mV @ 250µA	8nC @ 4.5V	467pF @ 6V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-WDFN (2x2)
IPG20N04S4L07AATMA1	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V Power - Max: 65W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-10	封装: 8-PowerVDFN	库存2,752	Logic Level Gate	40V	20A	7.2 mOhm @ 17A, 10V	2.2V @ 30µA	50nC @ 10V	3980pF @ 25V	65W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-10
IRF7104PBF	Infineon Technologies	MOSFET 2P-CH 20V 2.3A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存5,536	Logic Level Gate	20V	2.3A	250 mOhm @ 1A, 10V	3V @ 250µA	25nC @ 10V	290pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
GMM3X120-0075X2-SMDSAM	IXYS	MOSFET 6N-CH 75V 110A 24-SMD FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 110A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 24-SMD, Gull Wing Supplier Device Package: 24-SMD	封装: 24-SMD, Gull Wing	库存2,112	Standard	75V	110A	-	4V @ 1mA	115nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	24-SMD, Gull Wing	24-SMD
FDWS9420_F085	Fairchild/ON Semiconductor	40V DUAL AUTO N-CH POWER TRENCH FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V Power - Max: 75W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PQFN (5x6)	封装: 8-PowerTDFN	库存3,248	Standard	40V	20A (Tc)	5.8 mOhm @ 20A, 10V	4V @ 250µA	43nC @ 10V	2100pF @ 20V	75W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-PQFN (5x6)
SH8M41GZETB	Rohm Semiconductor	MOSFET N/P-CH 80V 3.4A/2.6A 8SOP FET Type: N and P-Channel FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存3,888	Logic Level Gate, 4V Drive	80V	3.4A, 2.6A	130 mOhm @ 3.4A, 10V	2.5V @ 1mA	9.2nC @ 5V	600pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
PHN203,518	Nexperia USA Inc.	MOSFET 2N-CH 30V 6.3A SOT96-1 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.3A Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 20V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,232	Logic Level Gate	30V	6.3A	30 mOhm @ 7A, 10V	2V @ 1mA	14.6nC @ 10V	560pF @ 20V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AO6804A	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 5A 6TSOP FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 28 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 10V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	封装: SC-74, SOT-457	库存629,016	Logic Level Gate	20V	5A	28 mOhm @ 5A, 4.5V	1V @ 250µA	7.5nC @ 4.5V	225pF @ 10V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	SC-74, SOT-457	6-TSOP
BUK7K29-100EX	Nexperia USA Inc.	MOSFET 2N-CH 100V 29.5A LFPAK56 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 29.5A Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 38.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2436pF @ 25V Power - Max: 68W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	封装: SOT-1205, 8-LFPAK56	库存2,272	Standard	100V	29.5A	24.5 mOhm @ 10A, 10V	4V @ 1mA	38.1nC @ 10V	2436pF @ 25V	68W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
AO4614B	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 40V 6A/5A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A, 5A Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存372,840	Logic Level Gate	40V	6A, 5A	30 mOhm @ 6A, 10V	3V @ 250µA	10.8nC @ 10V	650pF @ 20V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMN601DWK-7	Diodes Incorporated	MOSFET 2N-CH 60V 0.305A SOT-363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 305mA Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 200mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: 6-TSSOP, SC-88, SOT-363	库存1,392,264	Logic Level Gate	60V	305mA	2 Ohm @ 500mA, 10V	2.5V @ 1mA	-	50pF @ 25V	200mW	-65°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
NTZD5110NT1G	ON Semiconductor	MOSFET 2N-CH 60V 0.294A SOT563 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 294mA Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: SOT-563, SOT-666	库存2,114,760	Logic Level Gate	60V	294mA	1.6 Ohm @ 500mA, 10V	2.5V @ 250µA	0.7nC @ 4.5V	24.5pF @ 20V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMN2991UDJ-7A	Diodes Incorporated	MOSFET 2N-CH 20V 0.52A SOT963 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 520mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V Power - Max: 400mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	封装: -	库存29,895	-	20V	520mA (Ta)	990mOhm @ 100mA, 4.5V	1V @ 250µA	0.35nC @ 4.5V	21.5pF @ 15V	400mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-963	SOT-963
MCQD08N06-TP	Micro Commercial Co	MOSFET 2N-CH 60V 8A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 30V Power - Max: 9.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	Request a Quote	-	60V	8A	22mOhm @ 8A, 10V	3V @ 250µA	41.9nC @ 10V	2000pF @ 30V	9.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMN2022UCA4-7	Diodes Incorporated	MOSFET BVDSS: 8V~24V X4-DSN1717- FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 1438pF @ 10V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, DSBGA Supplier Device Package: X4-DSN1717-4	封装: -	Request a Quote	-	24V	7.8A (Ta)	22mOhm @ 3A, 4.5V	1.4V @ 1mA	12.5nC @ 4V	1438pF @ 10V	1W	-55°C ~ 150°C (TJ)	Surface Mount	4-XFBGA, DSBGA	X4-DSN1717-4
SIA922EDJ-T4-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 4.4A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 4.5A (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.9W (Ta), 7.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Dual Supplier Device Package: PowerPAK® SC-70-6 Dual	封装: -	Request a Quote	-	30V	4.4A (Ta), 4.5A (Tc)	64mOhm @ 3A, 4.5V	1.4V @ 250µA	12nC @ 10V	-	1.9W (Ta), 7.8W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SC-70-6 Dual	PowerPAK® SC-70-6 Dual
MSCSM170HRM451AG	Microchip Technology	SIC 4N-CH 1700V/1200V 64A/89A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 64A (Tc), 89A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V, 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 3.2V @ 2.5mA, 2.8V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V, 232nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V, 3020pF @ 1000V Power - Max: 319W (Tc), 395W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	Request a Quote	-	1700V (1.7kV), 1200V (1.2kV)	64A (Tc), 89A (Tc)	45mOhm @ 30A, 20V, 31mOhm @ 40A, 20V	3.2V @ 2.5mA, 2.8V @ 3mA	178nC @ 20V, 232nC @ 20V	3300pF @ 1000V, 3020pF @ 1000V	319W (Tc), 395W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
SSM6N7002BFU-T5L-F	Toshiba Semiconductor and Storage	MOSFET 2N-CH 60V 0.2A US6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V Power - Max: 300mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封装: -	Request a Quote	Logic Level Gate	60V	200mA	2.1Ohm @ 500mA, 10V	3.1V @ 250µA	-	17pF @ 25V	300mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
GSFN0232	Good-Ark Semiconductor	MOSFET 20V 32A 6DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 32A (Ta) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 5.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 15V Power - Max: 20W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WFDFN Exposed Pad Supplier Device Package: 6-DFN (2x3)	封装: -	库存17,910	-	20V	32A (Ta)	6.7mOhm @ 5.5A, 4.5V	1.5V @ 250µA	30nC @ 4.5V	1180pF @ 15V	20W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-WFDFN Exposed Pad	6-DFN (2x3)
UPA672CT-T1-AT	Renesas Electronics Corporation	MOSFET 2N-CH 60V 0.1A SC88 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 2.7Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 10V Power - Max: 200mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88	封装: -	Request a Quote	Logic Level Gate, 4.5V Drive	60V	100mA (Ta)	2.7Ohm @ 100mA, 10V	2.5V @ 250µA	2nC @ 10V	20pF @ 10V	200mW (Ta)	150°C	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88
MSCSM120AM042D3AG	Microchip Technology	SIC 2N-CH 1200V 495A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V Vgs(th) (Max) @ Id: 2.8V @ 18mA Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V Power - Max: 2.031kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	Request a Quote	-	1200V (1.2kV)	495A (Tc)	5.2mOhm @ 240A, 20V	2.8V @ 18mA	1392nC @ 20V	18100pF @ 1000V	2.031kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
FW216A-TL-2WX	onsemi	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
PJX8807_R1_00001	Panjit International Inc.	MOSFET 2P-CH 20V 0.5A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V Power - Max: 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: -	库存24,000	-	20V	500mA (Ta)	1.2Ohm @ 500mA, 4.5V	1V @ 250µA	1.4nC @ 4.5V	38pF @ 10V	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
IRF40H233ATMA1	Infineon Technologies	MOSFET 2N-CH 40V 65A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 3.9V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 20V Power - Max: 3.8W (Ta), 50W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	封装: -	Request a Quote	-	40V	65A (Tc)	6.2mOhm @ 35A, 10V	3.9V @ 50µA	57nC @ 10V	2200pF @ 20V	3.8W (Ta), 50W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
SQJB02ELP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 20V Power - Max: 27W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	封装: -	库存25,422	-	40V	30A (Tc)	7.5mOhm @ 6A, 10V	2.2V @ 250µA	32nC @ 10V	1700pF @ 20V	27W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
PSMN6R8-40HSX	Nexperia USA Inc.	MOSFET 2N-CH 40V 40A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1947pF @ 25V Power - Max: 64W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	封装: -	库存4,653	-	40V	40A (Ta)	6.8mOhm @ 20A, 10V	4V @ 1mA	28.9nC @ 10V	1947pF @ 25V	64W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D

AO9926BL_101

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.6A
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,952

Standard

20V

7.6A

23 mOhm @ 7.6A, 10V

1.1V @ 250µA

12.5nC @ 10V

630pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SI4942DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 40V 5.3A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 7.4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存2,208

Logic Level Gate

40V

5.3A

21 mOhm @ 7.4A, 10V

3V @ 250µA

32nC @ 10V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI4539ADY-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 30V 4.4A 8-SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A, 3.7A
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存435,036

Logic Level Gate

30V

4.4A, 3.7A

36 mOhm @ 5.9A, 10V

1V @ 250µA (Min)

20nC @ 10V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI1557DH-T1-E3

Vishay Siliconix

MOSFET N/P-CH 12V 1.2A SC70-6

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.2A, 770mA
Rds On (Max) @ Id, Vgs: 235 mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 470mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

封装: 6-TSSOP, SC-88, SOT-363

库存72,000

Logic Level Gate

12V

1.2A, 770mA

235 mOhm @ 1.2A, 4.5V

1V @ 100µA

1.2nC @ 4.5V

-

470mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6 (SOT-363)

NTLJD2104PTAG

ON Semiconductor

MOSFET 2P-CH 12V 2.4A 6WDFN

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 467pF @ 6V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WDFN (2x2)

封装: 6-WDFN Exposed Pad

库存5,248

Logic Level Gate

12V

2.4A

90 mOhm @ 3A, 4.5V

800mV @ 250µA

8nC @ 4.5V

467pF @ 6V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-WDFN (2x2)

IPG20N04S4L07AATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V
Power - Max: 65W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-10

封装: 8-PowerVDFN

库存2,752

Logic Level Gate

40V

20A

7.2 mOhm @ 17A, 10V

2.2V @ 30µA

50nC @ 10V

3980pF @ 25V

65W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-10

IRF7104PBF

Infineon Technologies

MOSFET 2P-CH 20V 2.3A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存5,536

Logic Level Gate

20V

2.3A

250 mOhm @ 1A, 10V

3V @ 250µA

25nC @ 10V

290pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

GMM3X120-0075X2-SMDSAM

IXYS

MOSFET 6N-CH 75V 110A 24-SMD

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 110A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-SMD, Gull Wing
Supplier Device Package: 24-SMD

封装: 24-SMD, Gull Wing

库存2,112

Standard

75V

110A

-

4V @ 1mA

115nC @ 10V

-

-55°C ~ 175°C (TJ)

Surface Mount

24-SMD, Gull Wing

24-SMD

FDWS9420_F085

Fairchild/ON Semiconductor

40V DUAL AUTO N-CH POWER TRENCH

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V
Power - Max: 75W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PQFN (5x6)

封装: 8-PowerTDFN

库存3,248

Standard

40V

20A (Tc)

5.8 mOhm @ 20A, 10V

4V @ 250µA

43nC @ 10V

2100pF @ 20V

75W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-PQFN (5x6)

SH8M41GZETB

Rohm Semiconductor

MOSFET N/P-CH 80V 3.4A/2.6A 8SOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A
Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存3,888

Logic Level Gate, 4V Drive

80V

3.4A, 2.6A

130 mOhm @ 3.4A, 10V

2.5V @ 1mA

9.2nC @ 5V

600pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

PHN203,518

Nexperia USA Inc.

MOSFET 2N-CH 30V 6.3A SOT96-1

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 20V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,232

Logic Level Gate

30V

6.3A

30 mOhm @ 7A, 10V

2V @ 1mA

14.6nC @ 10V

560pF @ 20V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AO6804A

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 5A 6TSOP

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 10V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

封装: SC-74, SOT-457

库存629,016

Logic Level Gate

20V

5A

28 mOhm @ 5A, 4.5V

1V @ 250µA

7.5nC @ 4.5V

225pF @ 10V

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

SC-74, SOT-457

6-TSOP

BUK7K29-100EX

Nexperia USA Inc.

MOSFET 2N-CH 100V 29.5A LFPAK56

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 29.5A
Rds On (Max) @ Id, Vgs: 24.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 38.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2436pF @ 25V
Power - Max: 68W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

封装: SOT-1205, 8-LFPAK56

库存2,272

Standard

100V

29.5A

24.5 mOhm @ 10A, 10V

4V @ 1mA

38.1nC @ 10V

2436pF @ 25V

68W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

AO4614B

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 40V 6A/5A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A, 5A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存372,840

Logic Level Gate

40V

6A, 5A

30 mOhm @ 6A, 10V

3V @ 250µA

10.8nC @ 10V

650pF @ 20V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMN601DWK-7

Diodes Incorporated

MOSFET 2N-CH 60V 0.305A SOT-363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA
Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 200mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: 6-TSSOP, SC-88, SOT-363

库存1,392,264

Logic Level Gate

60V

305mA

2 Ohm @ 500mA, 10V

2.5V @ 1mA

-

50pF @ 25V

200mW

-65°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

NTZD5110NT1G

ON Semiconductor

MOSFET 2N-CH 60V 0.294A SOT563

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 294mA
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: SOT-563, SOT-666

库存2,114,760

Logic Level Gate

60V

294mA

1.6 Ohm @ 500mA, 10V

2.5V @ 250µA

0.7nC @ 4.5V

24.5pF @ 20V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMN2991UDJ-7A

Diodes Incorporated

MOSFET 2N-CH 20V 0.52A SOT963

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 520mA (Ta)
Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 21.5pF @ 15V
Power - Max: 400mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

封装: -

库存29,895

-

20V

520mA (Ta)

990mOhm @ 100mA, 4.5V

1V @ 250µA

0.35nC @ 4.5V

21.5pF @ 15V

400mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-963

MCQD08N06-TP

Micro Commercial Co

MOSFET 2N-CH 60V 8A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 30V
Power - Max: 9.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

Request a Quote

-

60V

8A

22mOhm @ 8A, 10V

3V @ 250µA

41.9nC @ 10V

2000pF @ 30V

9.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMN2022UCA4-7

Diodes Incorporated

MOSFET BVDSS: 8V~24V X4-DSN1717-

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 1438pF @ 10V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, DSBGA
Supplier Device Package: X4-DSN1717-4

封装: -

Request a Quote

-

24V

7.8A (Ta)

22mOhm @ 3A, 4.5V

1.4V @ 1mA

12.5nC @ 4V

1438pF @ 10V

1W

-55°C ~ 150°C (TJ)

Surface Mount

4-XFBGA, DSBGA

X4-DSN1717-4

SIA922EDJ-T4-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 4.4A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.9W (Ta), 7.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Supplier Device Package: PowerPAK® SC-70-6 Dual

封装: -

Request a Quote

-

30V

4.4A (Ta), 4.5A (Tc)

64mOhm @ 3A, 4.5V

1.4V @ 250µA

12nC @ 10V

-

1.9W (Ta), 7.8W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® SC-70-6 Dual

MSCSM170HRM451AG

Microchip Technology

SIC 4N-CH 1700V/1200V 64A/89A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 64A (Tc), 89A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V, 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 2.5mA, 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V, 232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V, 3020pF @ 1000V
Power - Max: 319W (Tc), 395W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

Request a Quote

-

1700V (1.7kV), 1200V (1.2kV)

64A (Tc), 89A (Tc)

45mOhm @ 30A, 20V, 31mOhm @ 40A, 20V

3.2V @ 2.5mA, 2.8V @ 3mA

178nC @ 20V, 232nC @ 20V

3300pF @ 1000V, 3020pF @ 1000V

319W (Tc), 395W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

SSM6N7002BFU-T5L-F

Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.2A US6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 3.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封装: -

Request a Quote

Logic Level Gate

60V

200mA

2.1Ohm @ 500mA, 10V

3.1V @ 250µA

-

17pF @ 25V

300mW

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

GSFN0232

Good-Ark Semiconductor

MOSFET 20V 32A 6DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 15V
Power - Max: 20W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WFDFN Exposed Pad
Supplier Device Package: 6-DFN (2x3)

封装: -

库存17,910

-

20V

32A (Ta)

6.7mOhm @ 5.5A, 4.5V

1.5V @ 250µA

30nC @ 4.5V

1180pF @ 15V

20W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

6-WFDFN Exposed Pad

6-DFN (2x3)

UPA672CT-T1-AT

Renesas Electronics Corporation

MOSFET 2N-CH 60V 0.1A SC88

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 2.7Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 10V
Power - Max: 200mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88

封装: -

Request a Quote

Logic Level Gate, 4.5V Drive

60V

100mA (Ta)

2.7Ohm @ 100mA, 10V

2.5V @ 250µA

2nC @ 10V

20pF @ 10V

200mW (Ta)

150°C

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88

MSCSM120AM042D3AG

Microchip Technology

SIC 2N-CH 1200V 495A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 18mA
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
Power - Max: 2.031kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

Request a Quote

-

1200V (1.2kV)

495A (Tc)

5.2mOhm @ 240A, 20V

2.8V @ 18mA

1392nC @ 20V

18100pF @ 1000V

2.031kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

FW216A-TL-2WX

onsemi

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

PJX8807_R1_00001

Panjit International Inc.

MOSFET 2P-CH 20V 0.5A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V
Power - Max: 300mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: -

库存24,000

-

20V

500mA (Ta)

1.2Ohm @ 500mA, 4.5V

1V @ 250µA

1.4nC @ 4.5V

38pF @ 10V

300mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

IRF40H233ATMA1

Infineon Technologies

MOSFET 2N-CH 40V 65A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 35A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 20V
Power - Max: 3.8W (Ta), 50W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

封装: -

Request a Quote

-

40V

65A (Tc)

6.2mOhm @ 35A, 10V

3.9V @ 50µA

57nC @ 10V

2200pF @ 20V

3.8W (Ta), 50W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

SQJB02ELP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 20V
Power - Max: 27W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

封装: -

库存25,422

-

40V

30A (Tc)

7.5mOhm @ 6A, 10V

2.2V @ 250µA

32nC @ 10V

1700pF @ 20V

27W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

PSMN6R8-40HSX

Nexperia USA Inc.

MOSFET 2N-CH 40V 40A LFPAK56D

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 28.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1947pF @ 25V
Power - Max: 64W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

封装: -

库存4,653

-

40V

40A (Ta)

6.8mOhm @ 20A, 10V

4V @ 1mA

28.9nC @ 10V

1947pF @ 25V

64W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D