页 95 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - FET，MOSFET - 阵列

记录 5,684
页  95/190
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制造商
描述
封装
库存
数量
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
EMH2409-TL-H
ON Semiconductor

MOSFET 2N-CH 30V 4A EMH8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 59 mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 10V
  • Power - Max: 1.2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-EMH
封装: 8-SMD, Flat Lead
库存5,040
Logic Level Gate
30V
4A
59 mOhm @ 2A, 10V
-
4.4nC @ 10V
240pF @ 10V
1.2W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-EMH
hot SI3909DV-T1-E3
Vishay Siliconix

MOSFET 2P-CH 20V 6TSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.8A, 4.5V
  • Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.15W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
封装: SOT-23-6 Thin, TSOT-23-6
库存535,764
Logic Level Gate
20V
-
200 mOhm @ 1.8A, 4.5V
500mV @ 250µA (Min)
4nC @ 4.5V
-
1.15W
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
TPC8211(TE12L,Q,M)
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 5.5A SOP8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP (5.5x6.0)
封装: 8-SOIC (0.173", 4.40mm Width)
库存4,912
Logic Level Gate
30V
5.5A
36 mOhm @ 3A, 10V
2.5V @ 1mA
25nC @ 10V
1250pF @ 10V
450mW
150°C (TJ)
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP (5.5x6.0)
hot SI4804BDY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 5.7A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A
  • Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存1,059,888
Logic Level Gate
30V
5.7A
22 mOhm @ 7.5A, 10V
3V @ 250µA
11nC @ 4.5V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
GWM70-01P2
IXYS

MOSFET 6N-CH 100V 70A ISODIL

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 70A
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: ISOPLUS-DIL?
  • Supplier Device Package: ISOPLUS-DIL?
封装: ISOPLUS-DIL?
库存2,432
Standard
100V
70A
14 mOhm @ 35A, 10V
4V @ 1mA
110nC @ 10V
-
-
-40°C ~ 175°C (TJ)
Surface Mount
ISOPLUS-DIL?
ISOPLUS-DIL?
hot FDW2504P
Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 3.8A 8-TSSO

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A
  • Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 10V
  • Power - Max: 600mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封装: 8-TSSOP (0.173", 4.40mm Width)
库存319,356
Logic Level Gate
20V
3.8A
43 mOhm @ 3.8A, 4.5V
1.5V @ 250µA
16nC @ 4.5V
1030pF @ 10V
600mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot IRF7319PBF
Infineon Technologies

MOSFET N/P-CH 30V 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存225,516
Standard
30V
-
29 mOhm @ 5.8A, 10V
1V @ 250µA
33nC @ 10V
650pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
ALD111910MAL
Advanced Linear Devices Inc.

MOSFET 2N-CH 8MSOP

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存4,096
-
-
-
-
-
-
-
-
-
-
-
-
NVMFD5853NLWFT1G
ON Semiconductor

MOSFET 2N-CH 40V 12A SO8FL

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 12A
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
  • Power - Max: 3W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
封装: 8-PowerTDFN
库存2,112
Logic Level Gate
40V
12A
10 mOhm @ 15A, 10V
2.4V @ 250µA
23nC @ 10V
1100pF @ 25V
3W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
hot SP8M2FU6TB
Rohm Semiconductor

MOSFET N/P-CH 30V 3.5A 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 83 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: 8-SOIC (0.154", 3.90mm Width)
库存25,140
Standard
30V
3.5A
83 mOhm @ 3.5A, 10V
2.5V @ 1mA
3.5nC @ 5V
140pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
AON6906A
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 9.1A/10A 8DFN

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.1A, 10A
  • Rds On (Max) @ Id, Vgs: 14.4 mOhm @ 9.1A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 15V
  • Power - Max: 1.9W, 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-DFN (5x6)
封装: 8-PowerVDFN
库存5,424
Logic Level Gate
30V
9.1A, 10A
14.4 mOhm @ 9.1A, 10V
2.4V @ 250µA
9nC @ 10V
670pF @ 15V
1.9W, 2W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
8-DFN (5x6)
hot NVMFD5877NLT1G
ON Semiconductor

MOSFET 2N-CH 60V 6A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 39 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
  • Power - Max: 3.2W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
封装: 8-PowerTDFN
库存4,944
Logic Level Gate
60V
6A
39 mOhm @ 7.5A, 10V
3V @ 250µA
20nC @ 10V
540pF @ 25V
3.2W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
DI9942T
Diodes Incorporated

MOSFET N/P-CH 20V 2.5A 8-SOIC

  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.6W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: 8-SOIC (0.154", 3.90mm Width)
库存7,264
Standard
20V
2.5A
-
-
-
-
1.6W
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SH8J65TB1
Rohm Semiconductor

MOSFET 2P-CH 30V 7A SOP8

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: 8-SOIC (0.154", 3.90mm Width)
库存3,232
Logic Level Gate
30V
7A
29 mOhm @ 7A, 10V
2.5V @ 1mA
18nC @ 5V
1200pF @ 10V
2W
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SQJB40EP-T1_GE3
Vishay Siliconix

MOSFET ARRAY 2N-CH 40V SO8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
  • Power - Max: 34W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SO-8 Dual
  • Supplier Device Package: PowerPAK? SO-8 Dual
封装: PowerPAK? SO-8 Dual
库存7,056
Standard
40V
30A (Tc)
8 mOhm @ 8A, 10V
2.5V @ 250µA
35nC @ 10V
1900pF @ 25V
34W
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK? SO-8 Dual
PowerPAK? SO-8 Dual
hot SI3590DV-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 30V 2.5A 6-TSOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A
  • Rds On (Max) @ Id, Vgs: 77 mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
封装: SOT-23-6 Thin, TSOT-23-6
库存653,100
Logic Level Gate
30V
2.5A, 1.7A
77 mOhm @ 3A, 4.5V
1.5V @ 250µA
4.5nC @ 4.5V
-
830mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
DMP4047SSD-13
Diodes Incorporated

MOSFET 2P-CH 40V 5.1A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.4A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1154pF @ 20V
  • Power - Max: 1.3W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存25,428
Logic Level Gate
40V
5.1A
45 mOhm @ 4.4A, 10V
3V @ 250µA
21.5nC @ 10V
1154pF @ 20V
1.3W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot IRF7101TRPBF
Infineon Technologies

MOSFET 2N-CH 20V 3.5A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 1.8A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存898,284
Logic Level Gate
20V
3.5A
100 mOhm @ 1.8A, 10V
3V @ 250µA
15nC @ 10V
320pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot IRF7324TRPBF
Infineon Technologies

MOSFET 2P-CH 20V 9A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 9A
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存27,792
Logic Level Gate
20V
9A
18 mOhm @ 9A, 4.5V
1V @ 250µA
63nC @ 5V
2940pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
NVMFD5C478NT1G
onsemi

MOSFET 2N-CH 40V 9.8A/27A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta), 27A (Tc)
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V
  • Power - Max: 3.1W (Ta), 23W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
封装: -
Request a Quote
-
40V
9.8A (Ta), 27A (Tc)
17mOhm @ 7.5A, 10V
3.5V @ 20µA
6.3nC @ 10V
325pF @ 25V
3.1W (Ta), 23W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerTDFN
8-DFN (5x6) Dual Flag (SO8FL-Dual)
NTTFD4D1N03P1E
onsemi

MOSFET 2N-CH 30V 12A/54A 12WQFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V, 3.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1103pF @ 15V, 972pF @ 15V
  • Power - Max: 1W (Ta), 20W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-PowerWQFN
  • Supplier Device Package: 12-WQFN (3.3x3.3)
封装: -
库存8,247
-
30V
12A (Ta), 54A (Tc)
4.3mOhm @ 10A, 10V, 3.5mOhm @ 10A, 10V
2.2V @ 270µA
15nC @ 10V, 14nC @ 10V
1103pF @ 15V, 972pF @ 15V
1W (Ta), 20W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
12-PowerWQFN
12-WQFN (3.3x3.3)
MSCM20AM058G
Microchip Technology

MOSFET 2N-CH 200V 280A LP8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: LP8
封装: -
库存9
-
200V
280A (Tc)
-
-
-
-
-
-
Chassis Mount
Module
LP8
TP44440HB
Tagore Technology

GANFET 2N-CH 650V 30QFN

  • FET Type: GaNFET (Gallium Nitride)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 472mOhm @ 500mA, 6V
  • Vgs(th) (Max) @ Id: 2.5V @ 2.8mA
  • Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 6V
  • Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 400V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 30-PowerWFQFN
  • Supplier Device Package: 30-QFN (8x10)
封装: -
库存174
-
650V
6.5A (Tc)
472mOhm @ 500mA, 6V
2.5V @ 2.8mA
0.75nC @ 6V
28pF @ 400V
-
-55°C ~ 150°C (TJ)
Surface Mount
30-PowerWFQFN
30-QFN (8x10)
DMP3011SPDW-13
Diodes Incorporated

MOSFET 2P-CH 30V 12.1A PWRDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta), 38.2A (Tc)
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 11.5A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2380pF @ 15V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (Type UXD)
封装: -
Request a Quote
-
30V
12.1A (Ta), 38.2A (Tc)
13mOhm @ 11.5A, 10V
3V @ 250µA
46nC @ 10V
2380pF @ 15V
1.4W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
PowerDI5060-8 (Type UXD)
G170P03S2
Goford Semiconductor

MOSFET 2P-CH 30V 9A 8SOP

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1786pF @ 4.5V
  • Power - Max: 1.4W (Tc)
  • Operating Temperature: -55°C ~ 150°C (Tc)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: -
库存11,211
-
30V
9A (Tc)
25mOhm @ 5A, 4.5V
2.5V @ 250µA
18nC @ 10V
1786pF @ 4.5V
1.4W (Tc)
-55°C ~ 150°C (Tc)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
HP8KB7TB1
Rohm Semiconductor

40V 24A, DUAL NCH+NCH, HSOP8, PO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 24A (Tc)
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 20V
  • Power - Max: 3W (Ta), 26W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-HSOP
封装: -
库存7,500
-
40V
16A (Ta), 24A (Tc)
8mOhm @ 16A, 10V
2.5V @ 1mA
27nC @ 10V
1570pF @ 20V
3W (Ta), 26W (Tc)
150°C (TJ)
Surface Mount
8-PowerTDFN
8-HSOP
FS5AS-06-T13-B21
Renesas Electronics Corporation

MOSFET N-CH

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
DMN62D2UVQ-7
Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT563 T&R

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
  • Power - Max: 500µW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
封装: -
Request a Quote
-
60V
450mA (Ta)
2Ohm @ 50mA, 5V
1V @ 250µA
0.8nC @ 4.5V
41pF @ 30V
500µW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
DMN10H220LPDW-13
Diodes Incorporated

MOSFET 2N-CH 100V 8A POWERDI50

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 384pF @ 25V
  • Power - Max: 2.2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PowerDI5060-8 (Type R)
封装: -
Request a Quote
-
100V
8A (Tc)
222mOhm @ 2A, 10V
2.5V @ 250µA
6.7nC @ 10V
384pF @ 25V
2.2W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount, Wettable Flank
8-PowerTDFN
PowerDI5060-8 (Type R)
HP8KE7TB1
Rohm Semiconductor

MOSFET 2N-CH 100V 10A/24A 8HSOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 24A (Tc)
  • Rds On (Max) @ Id, Vgs: 19.6mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 50V
  • Power - Max: 3W (Ta), 26W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-HSOP
封装: -
库存7,425
-
100V
10A (Ta), 24A (Tc)
19.6mOhm @ 10A, 10V
2.5V @ 1mA
19.8nC @ 10V
1100pF @ 50V
3W (Ta), 26W (Tc)
150°C (TJ)
Surface Mount
8-PowerTDFN
8-HSOP