页 17 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BSO615N	Infineon Technologies	MOSFET 2N-CH 60V 2.6A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.6A Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.6A, 4.5V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	封装: 8-SOIC (0.154", 3.90mm Width)	库存295,152	Logic Level Gate	60V	2.6A	150 mOhm @ 2.6A, 4.5V	2V @ 20µA	20nC @ 10V	380pF @ 25V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
AOP610	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V 8DIP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封装: 8-DIP (0.300", 7.62mm)	库存471,744	Logic Level Gate	30V	-	24 mOhm @ 7.7A, 10V	3V @ 250µA	15nC @ 10V	630pF @ 15V	2.3W	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
SSD2009ATF	Fairchild/ON Semiconductor	MOSFET 2N-CH 50V 3A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存423,492	Logic Level Gate	50V	3A	130 mOhm @ 3A, 10V	3V @ 250µA	25nC @ 10V	-	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
HUFA76404DK8T	Fairchild/ON Semiconductor	MOSFET 2N-CH 62V 3.6A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 62V Current - Continuous Drain (Id) @ 25°C: 3.6A Rds On (Max) @ Id, Vgs: 110 mOhm @ 3.6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存29,340	Logic Level Gate	62V	3.6A	110 mOhm @ 3.6A, 10V	3V @ 250µA	4.9nC @ 5V	250pF @ 25V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
EM6K33T2R	Rohm Semiconductor	MOSFET 2N-CH 50V 0.2A EMT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	封装: SOT-563, SOT-666	库存7,024	Logic Level Gate, 1.2V Drive	50V	200mA	2.2 Ohm @ 200mA, 4.5V	1V @ 1mA	-	25pF @ 10V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	EMT6
AO7800	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 900mA Rds On (Max) @ Id, Vgs: 300 mOhm @ 900mA, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	封装: 6-TSSOP, SC-88, SOT-363	库存121,229,124	Logic Level Gate	20V	900mA	300 mOhm @ 900mA, 4.5V	900mV @ 250µA	1.9nC @ 4.5V	120pF @ 10V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-70-6
CSD87312Q3E	Texas Instruments	MOSFET 2N-CH 30V 27A 8VSON FET Type: 2 N-Channel (Dual) Common Source FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A Rds On (Max) @ Id, Vgs: 33 mOhm @ 7A , 8V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-VSON (3.3x3.3)	封装: 8-PowerTDFN	库存84,252	Logic Level Gate	30V	27A	33 mOhm @ 7A , 8V	1.3V @ 250µA	8.2nC @ 4.5V	1250pF @ 15V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-VSON (3.3x3.3)
NTJD4401NT1G	ON Semiconductor	MOSFET 2N-CH 20V 0.63A SOT-363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 630mA Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Power - Max: 270mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	封装: 6-TSSOP, SC-88, SOT-363	库存2,285,172	Logic Level Gate	20V	630mA	375 mOhm @ 630mA, 4.5V	1.5V @ 250µA	3nC @ 4.5V	46pF @ 20V	270mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
STL15DN4F5	STMicroelectronics	MOSFET 2N-CH 40V 60A POWERFLAT FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A Rds On (Max) @ Id, Vgs: 9 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V Power - Max: 60W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (5x6)	封装: 8-PowerVDFN	库存5,216	Logic Level Gate	40V	60A	9 mOhm @ 7.5A, 10V	4V @ 250µA	25nC @ 10V	1550pF @ 25V	60W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PowerFlat? (5x6)
SIA910EDJ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 12V 4.5A SC-70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V Power - Max: 7.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	封装: PowerPAK? SC-70-6 Dual	库存457,260	Logic Level Gate	12V	4.5A	28 mOhm @ 5.2A, 4.5V	1V @ 250µA	16nC @ 8V	455pF @ 6V	7.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
DMN63D1LVQ-7	Diodes Incorporated	MOSFET BVDSS: 41V~60V SOT563 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 477mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V Power - Max: 450mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: -	Request a Quote	-	60V	477mA (Ta)	2Ohm @ 500mA, 10V	2.5V @ 1mA	1.04nC @ 10V	41pF @ 30V	450mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
UPA2756GR-E1-AT	Renesas Electronics Corporation	MOSFET 2N-CH 60V 4A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-PSOP	封装: -	Request a Quote	Logic Level Gate	60V	4A	105mOhm @ 2A, 10V	2.5V @ 1mA	6nC @ 10V	260pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-PSOP
EPC7018DC	EPC Space, LLC	GAN FET HEMT 100V 74A COTS 4UD FET Type: GaNFET (Gallium Nitride) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 50V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: 4-SMD	封装: -	库存300	-	100V	70A (Tc)	6.5mOhm @ 70A, 5V	2.5V @ 5mA	17nC @ 5V	1700pF @ 50V	-	-55°C ~ 150°C (TJ)	Surface Mount	4-SMD, No Lead	4-SMD
GSFK0501E	Good-Ark Semiconductor	MOSFET 2P-CH 50V 0.18A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Rds On (Max) @ Id, Vgs: 4Ohm @ 150mA, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 530pC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 25.2pF @ 25V Power - Max: 300mW (Ta) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: -	库存17,850	-	50V	180mA (Ta)	4Ohm @ 150mA, 10V	3V @ 250µA	530pC @ 10V	25.2pF @ 25V	300mW (Ta)	-50°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
SQJB68EP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 100V 11A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Power - Max: 27W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	封装: -	库存53,844	-	100V	11A (Tc)	92mOhm @ 4A, 10V	2.5V @ 250µA	8nC @ 10V	280pF @ 25V	27W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
SQJB60EP-T2_GE3	Vishay Siliconix	MOSFET 2N-CH 60V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual	封装: -	Request a Quote	-	60V	30A (Tc)	12mOhm @ 10A, 10V	2.5V @ 250µA	30nC @ 10V	1600pF @ 25V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
AOSD32334C	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 7A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Power - Max: 1.7W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	库存456,336	-	30V	7A (Ta)	20mOhm @ 7A, 10V	2.3V @ 250µA	20nC @ 10V	600pF @ 15V	1.7W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
NTLTD7900ZR2	onsemi	MOSFET 2N-CH 20V 6A MICRO8 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
FF8MR12W2M1B11BOMA1	Infineon Technologies	MOSFET 2N-CH 1200V AG-EASY2BM-2 FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 150A (Tj) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 150A, 15V (Typ) Vgs(th) (Max) @ Id: 5.55V @ 60mA Gate Charge (Qg) (Max) @ Vgs: 372nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY2BM-2	封装: -	Request a Quote	-	1200V (1.2kV)	150A (Tj)	7.5mOhm @ 150A, 15V (Typ)	5.55V @ 60mA	372nC @ 15V	11000pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-EASY2BM-2
PJX8838_R1_00001	Panjit International Inc.	MOSFET 2N-CH 50V 0.36A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V Power - Max: 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: -	库存41,340	-	50V	360mA (Ta)	1.45Ohm @ 500mA, 10V	1V @ 250µA	0.95nC @ 4.5V	36pF @ 25V	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
CSD86350Q5DT	Texas Instruments	MOSFET 2N-CH 25V 40A 8LSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 5V, 1.1mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 4.5V, 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 12.5V, 4000pF @ 12.5V Power - Max: 13W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: 8-LSON (5x6)	封装: -	库存750	-	25V	40A (Ta)	5mOhm @ 25A, 5V, 1.1mOhm @ 25A, 5V	2.1V @ 250µA, 1.6V @ 250µA	10.7nC @ 4.5V, 25nC @ 4.5V	1870pF @ 12.5V, 4000pF @ 12.5V	13W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	8-LSON (5x6)
MMDF2P02ER2	onsemi	MOSFET PWR P-CH 25V 2.5A 8-SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 16V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	Request a Quote	Logic Level Gate	25V	2.5A	250mOhm @ 2A, 10V	3V @ 250µA	15nC @ 10V	475pF @ 16V	2W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
EPC2102	EPC	GANFET 2N-CH 60V 23A DIE FET Type: GaNFET (Gallium Nitride) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 23A Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: -	库存375	-	60V	23A	4.4mOhm @ 20A, 5V	2.5V @ 7mA	6.8nC @ 5V	830pF @ 30V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
UPA1601GS-E1-A	Renesas	MOSFET 7N-CH 30V 0.27A 16SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 5.3Ohm @ 150mA, 4V Vgs(th) (Max) @ Id: 800mV @ 150mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V Power - Max: 1W (Ta) Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.220", 5.59mm Width) Supplier Device Package: 16-SOP	封装: -	Request a Quote	-	30V	270mA (Ta)	5.3Ohm @ 150mA, 4V	800mV @ 150mA	-	15pF @ 10V	1W (Ta)	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.220", 5.59mm Width)	16-SOP
FF4MR12W2M1HPB11BPSA1	Infineon Technologies	LOW POWER EASY FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 170A Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V Vgs(th) (Max) @ Id: 5.15V @ 80mA Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V Power - Max: 20mW Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-EASY2B	封装: -	库存54	-	1200V (1.2kV)	170A	4mOhm @ 200A, 18V	5.15V @ 80mA	594nC @ 18V	17600pF @ 800V	20mW	-40°C ~ 175°C (TJ)	Chassis Mount	Module	AG-EASY2B
FS50UMJ-3	Renesas Electronics Corporation	MOSFET N-CH 150V 50A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
UM6K31NFHATCN	Rohm Semiconductor	MOSFET 2N-CH 60V 0.25A UMT6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	封装: -	库存7,290	-	60V	250mA (Ta)	2.4Ohm @ 250mA, 10V	2.3V @ 1mA	-	15pF @ 25V	150mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
SQJB60EP-T1_BE3	Vishay Siliconix	MOSFET 2N-CH 60V 30A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Power - Max: 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric	封装: -	库存4,290	-	60V	30A (Tc)	12mOhm @ 10A, 10V	2.5V @ 250µA	30nC @ 10V	1600pF @ 25V	48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual Asymmetric
BSZ0908NDXTMA2	Infineon Technologies	MOSFET 2N-CH 30V 4.8A WISON-8 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), 7.6A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 9mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V, 6.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V, 730pF @ 15V Power - Max: 700mW (Ta), 860mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-WISON-8	封装: -	Request a Quote	Logic Level Gate, 4.5V Drive	30V	4.8A (Ta), 7.6A (Ta)	18mOhm @ 9A, 10V, 9mOhm @ 9A, 10V	2V @ 250µA	3nC @ 4.5V, 6.4nC @ 4.5V	340pF @ 15V, 730pF @ 15V	700mW (Ta), 860mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PG-WISON-8
FF4MR12KM1H	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

BSO615N

Infineon Technologies

MOSFET 2N-CH 60V 2.6A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 150 mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id: 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8

封装: 8-SOIC (0.154", 3.90mm Width)

库存295,152

Logic Level Gate

60V

2.6A

150 mOhm @ 2.6A, 4.5V

2V @ 20µA

20nC @ 10V

380pF @ 25V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

PG-DSO-8

AOP610

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 8DIP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
Power - Max: 2.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封装: 8-DIP (0.300", 7.62mm)

库存471,744

Logic Level Gate

30V

-

24 mOhm @ 7.7A, 10V

3V @ 250µA

15nC @ 10V

630pF @ 15V

2.3W

-55°C ~ 150°C (TJ)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

SSD2009ATF

Fairchild/ON Semiconductor

MOSFET 2N-CH 50V 3A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存423,492

Logic Level Gate

50V

3A

130 mOhm @ 3A, 10V

3V @ 250µA

25nC @ 10V

-

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

HUFA76404DK8T

Fairchild/ON Semiconductor

MOSFET 2N-CH 62V 3.6A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 62V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Rds On (Max) @ Id, Vgs: 110 mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存29,340

Logic Level Gate

62V

3.6A

110 mOhm @ 3.6A, 10V

3V @ 250µA

4.9nC @ 5V

250pF @ 25V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

EM6K33T2R

Rohm Semiconductor

MOSFET 2N-CH 50V 0.2A EMT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

封装: SOT-563, SOT-666

库存7,024

Logic Level Gate, 1.2V Drive

50V

200mA

2.2 Ohm @ 200mA, 4.5V

1V @ 1mA

-

25pF @ 10V

150mW

150°C (TJ)

Surface Mount

SOT-563, SOT-666

EMT6

AO7800

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V SC70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 900mA
Rds On (Max) @ Id, Vgs: 300 mOhm @ 900mA, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

封装: 6-TSSOP, SC-88, SOT-363

库存121,229,124

Logic Level Gate

20V

900mA

300 mOhm @ 900mA, 4.5V

900mV @ 250µA

1.9nC @ 4.5V

120pF @ 10V

300mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-70-6

CSD87312Q3E

Texas Instruments

MOSFET 2N-CH 30V 27A 8VSON

FET Type: 2 N-Channel (Dual) Common Source
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27A
Rds On (Max) @ Id, Vgs: 33 mOhm @ 7A , 8V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-VSON (3.3x3.3)

封装: 8-PowerTDFN

库存84,252

Logic Level Gate

30V

27A

33 mOhm @ 7A , 8V

1.3V @ 250µA

8.2nC @ 4.5V

1250pF @ 15V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-VSON (3.3x3.3)

NTJD4401NT1G

ON Semiconductor

MOSFET 2N-CH 20V 0.63A SOT-363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 630mA
Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Power - Max: 270mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

封装: 6-TSSOP, SC-88, SOT-363

库存2,285,172

Logic Level Gate

20V

630mA

375 mOhm @ 630mA, 4.5V

1.5V @ 250µA

3nC @ 4.5V

46pF @ 20V

270mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

STL15DN4F5

STMicroelectronics

MOSFET 2N-CH 40V 60A POWERFLAT

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 9 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V
Power - Max: 60W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat? (5x6)

封装: 8-PowerVDFN

库存5,216

Logic Level Gate

40V

60A

9 mOhm @ 7.5A, 10V

4V @ 250µA

25nC @ 10V

1550pF @ 25V

60W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PowerFlat? (5x6)

SIA910EDJ-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 12V 4.5A SC-70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

封装: PowerPAK? SC-70-6 Dual

库存457,260

Logic Level Gate

12V

4.5A

28 mOhm @ 5.2A, 4.5V

1V @ 250µA

16nC @ 8V

455pF @ 6V

7.8W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

DMN63D1LVQ-7

Diodes Incorporated

MOSFET BVDSS: 41V~60V SOT563 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 477mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.04nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 30V
Power - Max: 450mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: -

Request a Quote

-

60V

477mA (Ta)

2Ohm @ 500mA, 10V

2.5V @ 1mA

1.04nC @ 10V

41pF @ 30V

450mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

UPA2756GR-E1-AT

Renesas Electronics Corporation

MOSFET 2N-CH 60V 4A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-PSOP

封装: -

Request a Quote

Logic Level Gate

60V

4A

105mOhm @ 2A, 10V

2.5V @ 1mA

6nC @ 10V

260pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.173", 4.40mm Width)

8-PSOP

EPC7018DC

EPC Space, LLC

GAN FET HEMT 100V 74A COTS 4UD

FET Type: GaNFET (Gallium Nitride)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 70A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 50V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: 4-SMD

封装: -

库存300

-

100V

70A (Tc)

6.5mOhm @ 70A, 5V

2.5V @ 5mA

17nC @ 5V

1700pF @ 50V

-

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD, No Lead

4-SMD

GSFK0501E

Good-Ark Semiconductor

MOSFET 2P-CH 50V 0.18A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 150mA, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 530pC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 25.2pF @ 25V
Power - Max: 300mW (Ta)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: -

库存17,850

-

50V

180mA (Ta)

4Ohm @ 150mA, 10V

3V @ 250µA

530pC @ 10V

25.2pF @ 25V

300mW (Ta)

-50°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

SQJB68EP-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 100V 11A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
Power - Max: 27W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

封装: -

库存53,844

-

100V

11A (Tc)

92mOhm @ 4A, 10V

2.5V @ 250µA

8nC @ 10V

280pF @ 25V

27W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

SQJB60EP-T2_GE3

Vishay Siliconix

MOSFET 2N-CH 60V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual

封装: -

Request a Quote

-

60V

30A (Tc)

12mOhm @ 10A, 10V

2.5V @ 250µA

30nC @ 10V

1600pF @ 25V

48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

AOSD32334C

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 7A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Power - Max: 1.7W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

库存456,336

-

30V

7A (Ta)

20mOhm @ 7A, 10V

2.3V @ 250µA

20nC @ 10V

600pF @ 15V

1.7W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

NTLTD7900ZR2

onsemi

MOSFET 2N-CH 20V 6A MICRO8

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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FF8MR12W2M1B11BOMA1

Infineon Technologies

MOSFET 2N-CH 1200V AG-EASY2BM-2

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 150A (Tj)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 150A, 15V (Typ)
Vgs(th) (Max) @ Id: 5.55V @ 60mA
Gate Charge (Qg) (Max) @ Vgs: 372nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY2BM-2

封装: -

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-

1200V (1.2kV)

150A (Tj)

7.5mOhm @ 150A, 15V (Typ)

5.55V @ 60mA

372nC @ 15V

11000pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

AG-EASY2BM-2

PJX8838_R1_00001

Panjit International Inc.

MOSFET 2N-CH 50V 0.36A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Power - Max: 300mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: -

库存41,340

-

50V

360mA (Ta)

1.45Ohm @ 500mA, 10V

1V @ 250µA

0.95nC @ 4.5V

36pF @ 25V

300mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

CSD86350Q5DT

Texas Instruments

MOSFET 2N-CH 25V 40A 8LSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 5V, 1.1mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 4.5V, 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 12.5V, 4000pF @ 12.5V
Power - Max: 13W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: 8-LSON (5x6)

封装: -

库存750

-

25V

40A (Ta)

5mOhm @ 25A, 5V, 1.1mOhm @ 25A, 5V

2.1V @ 250µA, 1.6V @ 250µA

10.7nC @ 4.5V, 25nC @ 4.5V

1870pF @ 12.5V, 4000pF @ 12.5V

13W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerLDFN

8-LSON (5x6)

MMDF2P02ER2

onsemi

MOSFET PWR P-CH 25V 2.5A 8-SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 250mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 16V
Power - Max: 2W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

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Logic Level Gate

25V

2.5A

250mOhm @ 2A, 10V

3V @ 250µA

15nC @ 10V

475pF @ 16V

2W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

EPC2102

EPC

GANFET 2N-CH 60V 23A DIE

FET Type: GaNFET (Gallium Nitride)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 23A
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: -

库存375

-

60V

23A

4.4mOhm @ 20A, 5V

2.5V @ 7mA

6.8nC @ 5V

830pF @ 30V

-

-40°C ~ 150°C (TJ)

Surface Mount

Die

UPA1601GS-E1-A

Renesas

MOSFET 7N-CH 30V 0.27A 16SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 150mA, 4V
Vgs(th) (Max) @ Id: 800mV @ 150mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
Power - Max: 1W (Ta)
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.220", 5.59mm Width)
Supplier Device Package: 16-SOP

封装: -

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-

30V

270mA (Ta)

5.3Ohm @ 150mA, 4V

800mV @ 150mA

-

15pF @ 10V

1W (Ta)

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.220", 5.59mm Width)

16-SOP

FF4MR12W2M1HPB11BPSA1

Infineon Technologies

LOW POWER EASY

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 170A
Rds On (Max) @ Id, Vgs: 4mOhm @ 200A, 18V
Vgs(th) (Max) @ Id: 5.15V @ 80mA
Gate Charge (Qg) (Max) @ Vgs: 594nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 17600pF @ 800V
Power - Max: 20mW
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-EASY2B

封装: -

库存54

-

1200V (1.2kV)

170A

4mOhm @ 200A, 18V

5.15V @ 80mA

594nC @ 18V

17600pF @ 800V

20mW

-40°C ~ 175°C (TJ)

Chassis Mount

Module

AG-EASY2B

FS50UMJ-3

Renesas Electronics Corporation

MOSFET N-CH 150V 50A

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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-

UM6K31NFHATCN

Rohm Semiconductor

MOSFET 2N-CH 60V 0.25A UMT6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

封装: -

库存7,290

-

60V

250mA (Ta)

2.4Ohm @ 250mA, 10V

2.3V @ 1mA

-

15pF @ 25V

150mW

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

SQJB60EP-T1_BE3

Vishay Siliconix

MOSFET 2N-CH 60V 30A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
Power - Max: 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric

封装: -

库存4,290

-

60V

30A (Tc)

12mOhm @ 10A, 10V

2.5V @ 250µA

30nC @ 10V

1600pF @ 25V

48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

PowerPAK® SO-8 Dual Asymmetric

BSZ0908NDXTMA2

Infineon Technologies

MOSFET 2N-CH 30V 4.8A WISON-8

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), 7.6A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, 9mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V, 6.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V, 730pF @ 15V
Power - Max: 700mW (Ta), 860mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-WISON-8

封装: -

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Logic Level Gate, 4.5V Drive

30V

4.8A (Ta), 7.6A (Ta)

18mOhm @ 9A, 10V, 9mOhm @ 9A, 10V

2V @ 250µA

3nC @ 4.5V, 6.4nC @ 4.5V

340pF @ 15V, 730pF @ 15V

700mW (Ta), 860mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PG-WISON-8

FF4MR12KM1H

Infineon Technologies

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-