页 162 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7325TRPBF	Infineon Technologies	MOSFET 2P-CH 12V 7.8A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 7.8A Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.8A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 10V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存37,788	Logic Level Gate	12V	7.8A	24 mOhm @ 7.8A, 4.5V	900mV @ 250µA	33nC @ 4.5V	2020pF @ 10V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ECH8662-TL-HX	ON Semiconductor	MOSFET N-CH ECH8 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,512	-	-	-	-	-	-	-	-	-	-	-	-
AO5804E	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 0.5A SC89-6L FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V Power - Max: 280mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	封装: SOT-563, SOT-666	库存609,540	Logic Level Gate	20V	500mA	550 mOhm @ 500mA, 4.5V	1V @ 250µA	1nC @ 4.5V	45pF @ 10V	280mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
MVDF2C03HDR2G	ON Semiconductor	MOSFET N/P-CH 30V 4.1A/3A 8SOIC FET Type: N and P-Channel Complementary FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.1A, 3A Rds On (Max) @ Id, Vgs: 70 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 24V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存3,328	Logic Level Gate	30V	4.1A, 3A	70 mOhm @ 3A, 10V	3V @ 250µA	16nC @ 10V	630pF @ 24V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SI7925DN-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 12V 4.8A 1212-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.8A Rds On (Max) @ Id, Vgs: 42 mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	封装: PowerPAK? 1212-8 Dual	库存6,816	Logic Level Gate	12V	4.8A	42 mOhm @ 6.5A, 4.5V	1V @ 250µA	12nC @ 4.5V	-	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
SI7842DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 6.3A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.3A Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封装: PowerPAK? SO-8 Dual	库存55,824	Logic Level Gate	30V	6.3A	22 mOhm @ 7.5A, 10V	2.4V @ 250µA	20nC @ 10V	-	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
FDS6982S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 10V Power - Max: 900mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存1,039,716	Logic Level Gate	30V	6.3A, 8.6A	28 mOhm @ 6.3A, 10V	3V @ 250µA	12nC @ 5V	2040pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI6544BDQ-T1-E3	Vishay Siliconix	MOSFET N/P-CH 30V 3.7A 8-TSSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.8A Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存314,652	Logic Level Gate	30V	3.7A, 3.8A	43 mOhm @ 3.8A, 10V	3V @ 250µA	15nC @ 10V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
NTJD2152PT4	ON Semiconductor	MOSFET 2P-CH 8V 0.775A SOT-363 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 775mA Rds On (Max) @ Id, Vgs: 300 mOhm @ 570mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 8V Power - Max: 270mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	封装: 6-TSSOP, SC-88, SOT-363	库存2,672	Logic Level Gate	8V	775mA	300 mOhm @ 570mA, 4.5V	1V @ 250µA	4nC @ 4.5V	225pF @ 8V	270mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
FDW2520C	Fairchild/ON Semiconductor	MOSFET N/P-CH 20V 6A/4.4A 8TSSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A, 4.4A Rds On (Max) @ Id, Vgs: 18 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1325pF @ 10V Power - Max: 600mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存14,760	Logic Level Gate	20V	6A, 4.4A	18 mOhm @ 6A, 4.5V	1.5V @ 250µA	20nC @ 4.5V	1325pF @ 10V	600mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SLA5041	Sanken	MOSFET 4N-CH 200V 10A 12SIP FET Type: 4 N-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 10A Rds On (Max) @ Id, Vgs: 175 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V Power - Max: 5W Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 12-SIP, Exposed Tab Supplier Device Package: 12-SIP	封装: 12-SIP, Exposed Tab	库存6,288	Logic Level Gate	200V	10A	175 mOhm @ 5A, 10V	4V @ 1mA	-	850pF @ 10V	5W	150°C (TJ)	Through Hole	12-SIP, Exposed Tab	12-SIP
SQJB80EP-T1_GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 80V SO8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Power - Max: 48W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封装: PowerPAK? SO-8 Dual	库存2,944	Standard	80V	30A (Tc)	19 mOhm @ 8A, 10V	2.5V @ 250µA	32nC @ 10V	1400pF @ 25V	48W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
ALD110802SCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 16SOIC FET Type: 4 N-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.2V Vgs(th) (Max) @ Id: 220mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	封装: 16-SOIC (0.154", 3.90mm Width)	库存6,192	Standard	10.6V	-	500 Ohm @ 4.2V	220mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
ALD1107SBL	Advanced Linear Devices Inc.	MOSFET 4P-CH 10.6V 14SOIC FET Type: 4 P-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 1800 Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	封装: 14-SOIC (0.154", 3.90mm Width)	库存6,640	Standard	10.6V	-	1800 Ohm @ 5V	1V @ 1µA	-	3pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	14-SOIC (0.154", 3.90mm Width)	14-SOIC
BSO211PNTMA1	Infineon Technologies	MOSFET 2P-CH 20V 4.7A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.7A Rds On (Max) @ Id, Vgs: 67 mOhm @ 4.7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 23.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: P-DSO-8	封装: 8-SOIC (0.154", 3.90mm Width)	库存4,992	Logic Level Gate	20V	4.7A	67 mOhm @ 4.7A, 4.5V	1.2V @ 25µA	23.9nC @ 4.5V	920pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	P-DSO-8
SQJQ900E-T1_GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 40V PWRPAK8X8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 20V Power - Max: 135W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 8 x 8 Dual Supplier Device Package: PowerPAK? 8 x 8 Dual	封装: PowerPAK? 8 x 8 Dual	库存4,144	Standard	40V	100A (Tc)	3.9 mOhm @ 20A, 10V	2.5V @ 250µA	120nC @ 10V	5900pF @ 20V	135W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? 8 x 8 Dual	PowerPAK? 8 x 8 Dual
DMTH4007SPD-13	Diodes Incorporated	MOSFET BVDSS: 31V 40V POWERDI506 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14.2A Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V Power - Max: 2.6W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8	封装: 8-PowerTDFN	库存7,152	Standard	40V	14.2A	8.6 mOhm @ 17A, 10V	4V @ 250µA	41.9nC @ 10V	2026pF @ 30V	2.6W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PowerDI5060-8
TT8J11TCR	Rohm Semiconductor	MOSFET 2P-CH 12V 3.5A TSST8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 6V Power - Max: 650mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-TSST	封装: 8-SMD, Flat Lead	库存86,508	Logic Level Gate, 1.5V Drive	12V	3.5A	43 mOhm @ 3.5A, 4.5V	1V @ 1mA	22nC @ 4.5V	2600pF @ 6V	650mW	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-TSST
SQJ202EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 12V 20A/60A PPAK SO FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A, 60A Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V Power - Max: 27W, 48W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual Asymmetric	封装: PowerPAK? SO-8 Dual	库存29,082	Standard	12V	20A, 60A	6.5 mOhm @ 15A, 10V	2V @ 250µA	22nC @ 10V	975pF @ 6V	27W, 48W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual Asymmetric
DMN4034SSD-13	Diodes Incorporated	MOSFET 2N-CH 40V 4.8A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.8A Rds On (Max) @ Id, Vgs: 34 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存5,488	Logic Level Gate	40V	4.8A	34 mOhm @ 6A, 10V	3V @ 250µA	18nC @ 10V	453pF @ 20V	1.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
DMN2041LSD-13	Diodes Incorporated	MOSFET 2N-CH 20V 7.63A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.63A Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V Power - Max: 1.16W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存15,552	Logic Level Gate	20V	7.63A	28 mOhm @ 6A, 4.5V	1.2V @ 250µA	15.6nC @ 10V	550pF @ 10V	1.16W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
FDS4559	Fairchild/ON Semiconductor	MOSFET N/P-CH 60V 4.5A/3.5A 8-SO FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Power - Max: 1W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存154,764	Logic Level Gate	60V	4.5A, 3.5A	55 mOhm @ 4.5A, 10V	3V @ 250µA	18nC @ 10V	650pF @ 25V	1W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
2N7002DW-G	onsemi	MOSFET 2N-CH 60V 0.115A SC88 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 200mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	封装: -	库存15,432	-	60V	115mA (Ta)	2Ohm @ 500mA, 10V	2V @ 250µA	-	50pF @ 25V	200mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
SQJ202EP-T2_GE3	Vishay Siliconix	MOSFET 2N-CH 12V 20A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V, 3.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V, 2525pF @ 6V Power - Max: 27W (Tc), 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric	封装: -	库存27,000	-	12V	20A (Tc), 60A (Tc)	6.5mOhm @ 15A, 10V, 3.3mOhm @ 20A, 10V	2V @ 250µA	22nC @ 10V, 54nC @ 10V	975pF @ 6V, 2525pF @ 6V	27W (Tc), 48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual Asymmetric
PJT7801_R1_00001	Panjit International Inc.	MOSFET 2P-CH 20V 0.7A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Rds On (Max) @ Id, Vgs: 325mOhm @ 700mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V Power - Max: 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: -	库存25,710	-	20V	700mA (Ta)	325mOhm @ 700mA, 4.5V	1V @ 250µA	2.2nC @ 4.5V	165pF @ 10V	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
BSS138AKDW-TPQ2	Micro Commercial Co	MOSFET 2N-CH 50V 0.22A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 220mA Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 22.8pF @ 25V Power - Max: 350mW Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: -	Request a Quote	-	50V	220mA	2Ohm @ 500mA, 10V	1.45V @ 250µA	-	22.8pF @ 25V	350mW	-55°C ~ 150°C	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
NTMFD1D4N02P1E	onsemi	MOSFET 2N-CH 25V 13A/74A 8PQFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 74A (Tc), 24A (Ta), 155A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 1.1mOhm @ 37A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA, 2V @ 800µA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V, 21.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 13V, 3603pF @ 13V Power - Max: 960mW (Ta), 1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PQFN (5x6)	封装: -	库存8,820	-	25V	13A (Ta), 74A (Tc), 24A (Ta), 155A (Tc)	3.3mOhm @ 20A, 10V, 1.1mOhm @ 37A, 10V	2V @ 250µA, 2V @ 800µA	7.2nC @ 4.5V, 21.5nC @ 4.5V	1180pF @ 13V, 3603pF @ 13V	960mW (Ta), 1W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PQFN (5x6)
AOCR36330	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 40A 18RIGIDCSP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 3.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 18-SMD, No Lead Supplier Device Package: 18-RigidCSP (6.22x2.5)	封装: -	Request a Quote	-	30V	40A (Ta)	1.4mOhm @ 6A, 10V	2V @ 250µA	128nC @ 10V	-	3.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	18-SMD, No Lead	18-RigidCSP (6.22x2.5)
PJX8803_R1_00001	Panjit International Inc.	MOSFET 2P-CH 20V 0.6A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Rds On (Max) @ Id, Vgs: 340mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 151pF @ 10V Power - Max: 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: -	库存10,845	-	20V	600mA (Ta)	340mOhm @ 600mA, 4.5V	1V @ 250µA	2.2nC @ 4.5V	151pF @ 10V	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
DMP31D1UVTQ-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 760mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 54pF @ 15V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	封装: -	Request a Quote	-	30V	760mA (Ta)	1Ohm @ 400mA, 4.5V	1.1V @ 250µA	1.6nC @ 8V	54pF @ 15V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26

IRF7325TRPBF

Infineon Technologies

MOSFET 2P-CH 12V 7.8A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 7.8A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.8A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 10V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存37,788

Logic Level Gate

12V

7.8A

24 mOhm @ 7.8A, 4.5V

900mV @ 250µA

33nC @ 4.5V

2020pF @ 10V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ECH8662-TL-HX

ON Semiconductor

MOSFET N-CH ECH8

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,512

-

AO5804E

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 0.5A SC89-6L

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Rds On (Max) @ Id, Vgs: 550 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Power - Max: 280mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

封装: SOT-563, SOT-666

库存609,540

Logic Level Gate

20V

500mA

550 mOhm @ 500mA, 4.5V

1V @ 250µA

1nC @ 4.5V

45pF @ 10V

280mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

MVDF2C03HDR2G

ON Semiconductor

MOSFET N/P-CH 30V 4.1A/3A 8SOIC

FET Type: N and P-Channel Complementary
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.1A, 3A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 24V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存3,328

Logic Level Gate

30V

4.1A, 3A

70 mOhm @ 3A, 10V

3V @ 250µA

16nC @ 10V

630pF @ 24V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SI7925DN-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 12V 4.8A 1212-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Rds On (Max) @ Id, Vgs: 42 mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

封装: PowerPAK? 1212-8 Dual

库存6,816

Logic Level Gate

12V

4.8A

42 mOhm @ 6.5A, 4.5V

1V @ 250µA

12nC @ 4.5V

-

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

SI7842DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 6.3A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封装: PowerPAK? SO-8 Dual

库存55,824

Logic Level Gate

30V

6.3A

22 mOhm @ 7.5A, 10V

2.4V @ 250µA

20nC @ 10V

-

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

FDS6982S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A, 8.6A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 10V
Power - Max: 900mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存1,039,716

Logic Level Gate

30V

6.3A, 8.6A

28 mOhm @ 6.3A, 10V

3V @ 250µA

12nC @ 5V

2040pF @ 10V

900mW

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI6544BDQ-T1-E3

Vishay Siliconix

MOSFET N/P-CH 30V 3.7A 8-TSSOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 3.8A
Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存314,652

Logic Level Gate

30V

3.7A, 3.8A

43 mOhm @ 3.8A, 10V

3V @ 250µA

15nC @ 10V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

NTJD2152PT4

ON Semiconductor

MOSFET 2P-CH 8V 0.775A SOT-363

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 775mA
Rds On (Max) @ Id, Vgs: 300 mOhm @ 570mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 8V
Power - Max: 270mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

封装: 6-TSSOP, SC-88, SOT-363

库存2,672

Logic Level Gate

8V

775mA

300 mOhm @ 570mA, 4.5V

1V @ 250µA

4nC @ 4.5V

225pF @ 8V

270mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

FDW2520C

Fairchild/ON Semiconductor

MOSFET N/P-CH 20V 6A/4.4A 8TSSOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.4A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1325pF @ 10V
Power - Max: 600mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存14,760

Logic Level Gate

20V

6A, 4.4A

18 mOhm @ 6A, 4.5V

1.5V @ 250µA

20nC @ 4.5V

1325pF @ 10V

600mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SLA5041

Sanken

MOSFET 4N-CH 200V 10A 12SIP

FET Type: 4 N-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 175 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
Power - Max: 5W
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 12-SIP, Exposed Tab
Supplier Device Package: 12-SIP

封装: 12-SIP, Exposed Tab

库存6,288

Logic Level Gate

200V

10A

175 mOhm @ 5A, 10V

4V @ 1mA

-

850pF @ 10V

5W

150°C (TJ)

Through Hole

12-SIP, Exposed Tab

12-SIP

SQJB80EP-T1_GE3

Vishay Siliconix

MOSFET ARRAY 2N-CH 80V SO8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Power - Max: 48W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封装: PowerPAK? SO-8 Dual

库存2,944

Standard

80V

30A (Tc)

19 mOhm @ 8A, 10V

2.5V @ 250µA

32nC @ 10V

1400pF @ 25V

48W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

ALD110802SCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16SOIC

FET Type: 4 N-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.2V
Vgs(th) (Max) @ Id: 220mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

封装: 16-SOIC (0.154", 3.90mm Width)

库存6,192

Standard

10.6V

-

500 Ohm @ 4.2V

220mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

ALD1107SBL

Advanced Linear Devices Inc.

MOSFET 4P-CH 10.6V 14SOIC

FET Type: 4 P-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 1800 Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOIC

封装: 14-SOIC (0.154", 3.90mm Width)

库存6,640

Standard

10.6V

-

1800 Ohm @ 5V

1V @ 1µA

-

3pF @ 5V

500mW

0°C ~ 70°C (TJ)

Surface Mount

14-SOIC (0.154", 3.90mm Width)

14-SOIC

BSO211PNTMA1

Infineon Technologies

MOSFET 2P-CH 20V 4.7A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Rds On (Max) @ Id, Vgs: 67 mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 23.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: P-DSO-8

封装: 8-SOIC (0.154", 3.90mm Width)

库存4,992

Logic Level Gate

20V

4.7A

67 mOhm @ 4.7A, 4.5V

1.2V @ 25µA

23.9nC @ 4.5V

920pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

P-DSO-8

SQJQ900E-T1_GE3

Vishay Siliconix

MOSFET ARRAY 2N-CH 40V PWRPAK8X8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 20V
Power - Max: 135W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 8 x 8 Dual
Supplier Device Package: PowerPAK? 8 x 8 Dual

封装: PowerPAK? 8 x 8 Dual

库存4,144

Standard

40V

100A (Tc)

3.9 mOhm @ 20A, 10V

2.5V @ 250µA

120nC @ 10V

5900pF @ 20V

135W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? 8 x 8 Dual

DMTH4007SPD-13

Diodes Incorporated

MOSFET BVDSS: 31V 40V POWERDI506

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14.2A
Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 41.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2026pF @ 30V
Power - Max: 2.6W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8

封装: 8-PowerTDFN

库存7,152

Standard

40V

14.2A

8.6 mOhm @ 17A, 10V

4V @ 250µA

41.9nC @ 10V

2026pF @ 30V

2.6W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PowerDI5060-8

TT8J11TCR

Rohm Semiconductor

MOSFET 2P-CH 12V 3.5A TSST8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 6V
Power - Max: 650mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-TSST

封装: 8-SMD, Flat Lead

库存86,508

Logic Level Gate, 1.5V Drive

12V

3.5A

43 mOhm @ 3.5A, 4.5V

1V @ 1mA

22nC @ 4.5V

2600pF @ 6V

650mW

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-TSST

SQJ202EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 12V 20A/60A PPAK SO

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V
Power - Max: 27W, 48W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual Asymmetric

封装: PowerPAK? SO-8 Dual

库存29,082

Standard

12V

20A, 60A

6.5 mOhm @ 15A, 10V

2V @ 250µA

22nC @ 10V

975pF @ 6V

27W, 48W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

PowerPAK? SO-8 Dual Asymmetric

DMN4034SSD-13

Diodes Incorporated

MOSFET 2N-CH 40V 4.8A 8SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Rds On (Max) @ Id, Vgs: 34 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存5,488

Logic Level Gate

40V

4.8A

34 mOhm @ 6A, 10V

3V @ 250µA

18nC @ 10V

453pF @ 20V

1.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

DMN2041LSD-13

Diodes Incorporated

MOSFET 2N-CH 20V 7.63A 8SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.63A
Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Power - Max: 1.16W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存15,552

Logic Level Gate

20V

7.63A

28 mOhm @ 6A, 4.5V

1.2V @ 250µA

15.6nC @ 10V

550pF @ 10V

1.16W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

FDS4559

Fairchild/ON Semiconductor

MOSFET N/P-CH 60V 4.5A/3.5A 8-SO

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Power - Max: 1W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存154,764

Logic Level Gate

60V

4.5A, 3.5A

55 mOhm @ 4.5A, 10V

3V @ 250µA

18nC @ 10V

650pF @ 25V

1W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

2N7002DW-G

onsemi

MOSFET 2N-CH 60V 0.115A SC88

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 200mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

封装: -

库存15,432

-

60V

115mA (Ta)

2Ohm @ 500mA, 10V

2V @ 250µA

-

50pF @ 25V

200mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

SQJ202EP-T2_GE3

Vishay Siliconix

MOSFET 2N-CH 12V 20A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V, 3.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 54nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V, 2525pF @ 6V
Power - Max: 27W (Tc), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric

封装: -

库存27,000

-

12V

20A (Tc), 60A (Tc)

6.5mOhm @ 15A, 10V, 3.3mOhm @ 20A, 10V

2V @ 250µA

22nC @ 10V, 54nC @ 10V

975pF @ 6V, 2525pF @ 6V

27W (Tc), 48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

PowerPAK® SO-8 Dual Asymmetric

PJT7801_R1_00001

Panjit International Inc.

MOSFET 2P-CH 20V 0.7A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 325mOhm @ 700mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V
Power - Max: 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: -

库存25,710

-

20V

700mA (Ta)

325mOhm @ 700mA, 4.5V

1V @ 250µA

2.2nC @ 4.5V

165pF @ 10V

350mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

BSS138AKDW-TPQ2

Micro Commercial Co

MOSFET 2N-CH 50V 0.22A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 220mA
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 22.8pF @ 25V
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: -

Request a Quote

-

50V

220mA

2Ohm @ 500mA, 10V

1.45V @ 250µA

-

22.8pF @ 25V

350mW

-55°C ~ 150°C

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

NTMFD1D4N02P1E

onsemi

MOSFET 2N-CH 25V 13A/74A 8PQFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 74A (Tc), 24A (Ta), 155A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V, 1.1mOhm @ 37A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA, 2V @ 800µA
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V, 21.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 13V, 3603pF @ 13V
Power - Max: 960mW (Ta), 1W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PQFN (5x6)

封装: -

库存8,820

-

25V

13A (Ta), 74A (Tc), 24A (Ta), 155A (Tc)

3.3mOhm @ 20A, 10V, 1.1mOhm @ 37A, 10V

2V @ 250µA, 2V @ 800µA

7.2nC @ 4.5V, 21.5nC @ 4.5V

1180pF @ 13V, 3603pF @ 13V

960mW (Ta), 1W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PQFN (5x6)

AOCR36330

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 40A 18RIGIDCSP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 3.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 18-SMD, No Lead
Supplier Device Package: 18-RigidCSP (6.22x2.5)

封装: -

Request a Quote

-

30V

40A (Ta)

1.4mOhm @ 6A, 10V

2V @ 250µA

128nC @ 10V

-

3.5W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

18-SMD, No Lead

18-RigidCSP (6.22x2.5)

PJX8803_R1_00001

Panjit International Inc.

MOSFET 2P-CH 20V 0.6A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 151pF @ 10V
Power - Max: 300mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: -

库存10,845

-

20V

600mA (Ta)

340mOhm @ 600mA, 4.5V

1V @ 250µA

2.2nC @ 4.5V

151pF @ 10V

300mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

DMP31D1UVTQ-7

Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 54pF @ 15V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

封装: -

Request a Quote

-

30V

760mA (Ta)

1Ohm @ 400mA, 4.5V

1.1V @ 250µA

1.6nC @ 8V

54pF @ 15V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26