页 165 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SI4952DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 25V 8A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V Power - Max: 2.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存473,688	Logic Level Gate	25V	8A	23 mOhm @ 7A, 10V	2.2V @ 250µA	18nC @ 10V	680pF @ 13V	2.8W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NTHD3100CT3	ON Semiconductor	MOSFET N/P-CH 20V CHIPFET FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A, 3.2A Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?	封装: 8-SMD, Flat Lead	库存4,640	Logic Level Gate	20V	2.9A, 3.2A	80 mOhm @ 2.9A, 4.5V	1.2V @ 250µA	2.3nC @ 4.5V	165pF @ 10V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	ChipFET?
TPCF8402(TE85L,F,M	Toshiba Semiconductor and Storage	MOSFET N/P-CH 30V 4A/3.2A VS-8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3.2A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V Power - Max: 330mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: VS-8 (2.9x1.5)	封装: 8-SMD, Flat Lead	库存4,704	Logic Level Gate	30V	4A, 3.2A	50 mOhm @ 2A, 10V	2V @ 1mA	10nC @ 10V	470pF @ 10V	330mW	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	VS-8 (2.9x1.5)
BSL205NH6327XTSA1	Infineon Technologies	MOSFET 2N-CH 20V 2.5A 6TSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	封装: SOT-23-6 Thin, TSOT-23-6	库存5,456	Logic Level Gate, 4.5V Drive	20V	2.5A	50 mOhm @ 2.5A, 4.5V	1.2V @ 11µA	3.2nC @ 4.5V	419pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	PG-TSOP6-6
APTM50HM38FG	Microsemi Corporation	MOSFET 4N-CH 500V 90A SP6 FET Type: 4 N-Channel (H-Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 90A Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V Power - Max: 694W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6	封装: SP6	库存2,592	Standard	500V	90A	45 mOhm @ 45A, 10V	5V @ 5mA	246nC @ 10V	11200pF @ 25V	694W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
TC8020K6-G-M937	Microchip Technology	MOSFET 6N/6P-CH 200V 56VQFN FET Type: 6 N and 6 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 56-VFQFN Exposed Pad Supplier Device Package: 56-QFN (8x8)	封装: 56-VFQFN Exposed Pad	库存6,304	Standard	200V	-	8 Ohm @ 1A, 10V	2.4V @ 1mA	-	50pF @ 25V	-	-55°C ~ 150°C (TJ)	Surface Mount	56-VFQFN Exposed Pad	56-QFN (8x8)
TD9944TG-G	Microchip Technology	MOSFET 2N-CH 240V 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存5,440	Standard	240V	-	6 Ohm @ 500mA, 10V	2V @ 1mA	-	125pF @ 25V	-	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SI7272DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 25A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Power - Max: 22W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封装: PowerPAK? SO-8 Dual	库存96,456	Logic Level Gate	30V	25A	9.3 mOhm @ 15A, 10V	2.5V @ 250µA	26nC @ 10V	1100pF @ 15V	22W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
FDMS3664S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 13A/25A 8-PQFN FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 25A Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	封装: 8-PowerTDFN	库存2,141,112	Logic Level Gate	30V	13A, 25A	8 mOhm @ 13A, 10V	2.7V @ 250µA	29nC @ 10V	1765pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
ALD110904SAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8SOIC FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.4V Vgs(th) (Max) @ Id: 420mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存6,360	Standard	10.6V	12mA, 3mA	500 Ohm @ 4.4V	420mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
PMDXB550UNEZ	Nexperia USA Inc.	MOSFET 2N-CH 30V 0.59A 6DFN FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 590mA Rds On (Max) @ Id, Vgs: 670 mOhm @ 590mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V Power - Max: 285mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: DFN1010B-6	封装: 6-XFDFN Exposed Pad	库存39,966	Standard	30V	590mA	670 mOhm @ 590mA, 4.5V	950mV @ 250µA	1.05nC @ 4.5V	30.3pF @ 15V	285mW	-55°C ~ 150°C (TJ)	Surface Mount	6-XFDFN Exposed Pad	DFN1010B-6
2N7002PS,125	Nexperia USA Inc.	MOSFET 2N-CH 60V 0.32A 6TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 320mA Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Power - Max: 420mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封装: 6-TSSOP, SC-88, SOT-363	库存43,296	Logic Level Gate	60V	320mA	1.6 Ohm @ 500mA, 10V	2.4V @ 250µA	0.8nC @ 4.5V	50pF @ 10V	420mW	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
DMP31D1UVT-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 760mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 54pF @ 15V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	封装: -	Request a Quote	-	30V	760mA (Ta)	1Ohm @ 400mA, 4.5V	1.1V @ 250µA	1.6nC @ 8V	54pF @ 15V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
SSFK3220B	Good-Ark Semiconductor	MOSFET 2 N-CH 20V 0.8A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V Power - Max: 275mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: -	库存17,700	Logic Level Gate, 1.5V Drive	20V	800mA (Tc)	300mOhm @ 500mA, 4.5V	1V @ 250µA	2nC @ 4.5V	75pF @ 10V	275mW (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
SIZ998BDT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 23.7A 8PWRPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc) Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 46.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 2130pF @ 15V Power - Max: 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (6x5)	封装: -	库存53,151	-	30V	23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)	4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V	2.2V @ 250µA	18nC @ 10V, 46.7nC @ 10V	790pF @ 15V, 2130pF @ 15V	3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (6x5)
PJQ5846-AU_R2_000A1	Panjit International Inc.	MOSFET 2N-CH 40V 9.5A/40A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1258pF @ 25V Power - Max: 2W (Ta), 38.5W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: DFN5060B-8	封装: -	Request a Quote	-	40V	9.5A (Ta), 40A (Tc)	10.5mOhm @ 8A, 10V	2.5V @ 250µA	22nC @ 10V	1258pF @ 25V	2W (Ta), 38.5W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	DFN5060B-8
XP2531GY	YAGEO XSEMI	MOSFET N AND P-CH 16V 3.5A 2.5A FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 16V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.5A (Ta) Rds On (Max) @ Id, Vgs: 58mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 10V Power - Max: 1.14W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	封装: -	库存3,000	-	16V	3.5A (Ta), 2.5A (Ta)	58mOhm @ 3A, 4.5V	1V @ 250µA	12nC @ 4.5V	585pF @ 10V	1.14W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-26
TQM076NH04DCR-RLG	Taiwan Semiconductor Corporation	MOSFET 2N-CH 40V 15A/40A 8PDFNU FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 25V Power - Max: 55.6W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PDFNU (5x6)	封装: -	库存14,985	-	40V	15A (Ta), 40A (Tc)	7.6mOhm @ 20A, 10V	3.6V @ 250µA	29nC @ 10V	1850pF @ 25V	55.6W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-PDFNU (5x6)
HP8KB6TB1	Rohm Semiconductor	40V 24A, DUAL NCH+NCH, HSOP8, PO FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 15.7mOhm @ 10.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V Power - Max: 3W (Ta), 21W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-HSOP	封装: -	库存7,500	-	40V	10.5A (Ta), 24A (Tc)	15.7mOhm @ 10.5A, 10V	2.5V @ 1mA	10.6nC @ 10V	530pF @ 20V	3W (Ta), 21W (Tc)	150°C (TJ)	Surface Mount	8-PowerTDFN	8-HSOP
MSCSM170HRM075NG	Microchip Technology	SIC 4N-CH 1700V/1200V 337A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 337A (Tc), 317A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V, 7.8mOhm @ 160A, 20V Vgs(th) (Max) @ Id: 3.2V @ 15mA, 2.8V @ 12mA Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V, 928nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V, 12100pF @ 1000V Power - Max: 1.492kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	Request a Quote	-	1700V (1.7kV), 1200V (1.2kV)	337A (Tc), 317A (Tc)	7.5mOhm @ 180A, 20V, 7.8mOhm @ 160A, 20V	3.2V @ 15mA, 2.8V @ 12mA	1068nC @ 20V, 928nC @ 20V	19800pF @ 1000V, 12100pF @ 1000V	1.492kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
STMFS4854NST1G-ON	onsemi	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
KFCAB21520LE	Nuvoton Technology Corporation	DUAL NCH MOSFET 12, 16A, 1.6MOHM FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 2mOhm @ 8A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1.64mA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 10V Power - Max: 540mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 10-SMD, No Lead Supplier Device Package: 10-SMD	封装: -	库存3,000	-	12V	16A (Ta)	2mOhm @ 8A, 4.5V	1.4V @ 1.64mA	38nC @ 4V	5250pF @ 10V	540mW (Ta)	150°C	Surface Mount	10-SMD, No Lead	10-SMD
FDMS1D2N03DSD	onsemi	MOSFET 2N-CH 30V 19A/70A 8PQFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc) Rds On (Max) @ Id, Vgs: 3.25mOhm @ 19A, 10V, 0.97mOhm @ 37A, 10V Vgs(th) (Max) @ Id: 2.5V @ 320µA, 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, 117nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 15V, 4860pF @ 15V Power - Max: 2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PQFN (5x6)	封装: -	Request a Quote	-	30V	19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc)	3.25mOhm @ 19A, 10V, 0.97mOhm @ 37A, 10V	2.5V @ 320µA, 3V @ 1mA	33nC @ 10V, 117nC @ 10V	1410pF @ 15V, 4860pF @ 15V	2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PQFN (5x6)
DMN10H6D2LFDB-7	Diodes Incorporated	MOSFET 2N-CH 100V 0.27A 6UDFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 50V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	封装: -	Request a Quote	-	100V	270mA (Ta)	6Ohm @ 190mA, 10V	2V @ 1mA	1.2nC @ 10V	41pF @ 50V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
SQ4917CEY-T1_GE3	Vishay Siliconix	MOSFET 2P-CH 60V 8A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V Power - Max: 5W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	库存10,995	-	60V	8A (Tc)	48mOhm @ 4.3A, 10V	2.5V @ 250µA	65nC @ 10V	1910pF @ 30V	5W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MCB40P1200LB-TRR	IXYS	SIC 2N-CH 1200V 58A 9SMPD FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 58A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 9-PowerSMD Supplier Device Package: 9-SMPD-B	封装: -	Request a Quote	-	1200V (1.2kV)	58A	-	-	-	-	-	-	Surface Mount	9-PowerSMD	9-SMPD-B
DI017P03PT2-AQ	Diotec Semiconductor	IC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 20V Power - Max: 13.1W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: 8-QFN (3x3)	封装: -	Request a Quote	Logic Level Gate	30V	17A (Tc)	30mOhm @ 10A, 10V	2.5V @ 250µA	19.8nC @ 10V	1150pF @ 20V	13.1W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	8-QFN (3x3)
G180C06Y	Goford Semiconductor	MOSFET N/P-CH 60V 50A TO252-4 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc), 60A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V, 23mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA, 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V, 62nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2429pF @ 30V, 4471pF @ 30V Power - Max: 69W (Tc), 115W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-5, DPAK (4 Leads + Tab), TO-252AD Supplier Device Package: TO-252-4	封装: -	库存5,889	-	60V	50A (Tc), 60A (Tc)	17mOhm @ 20A, 10V, 23mOhm @ 10A, 10V	2V @ 250µA, 4V @ 250µA	39nC @ 4.5V, 62nC @ 4.5V	2429pF @ 30V, 4471pF @ 30V	69W (Tc), 115W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-5, DPAK (4 Leads + Tab), TO-252AD	TO-252-4
MMDF3N04HDR2	onsemi	MOSFET 2N-CH 40V 3.4A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 3.4A Rds On (Max) @ Id, Vgs: 80mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V Power - Max: 1.39W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	Request a Quote	Logic Level Gate	40V	3.4A	80mOhm @ 3.4A, 10V	3V @ 250µA	28nC @ 10V	900pF @ 32V	1.39W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
QS6K1FRATR	Rohm Semiconductor	MOSFET 2N-CH 30V 1A TSMT6 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 238mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 10V Power - Max: 900mW (Tc) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSMT6 (SC-95)	封装: -	库存42,042	Logic Level Gate, 2.5V Drive	30V	1A (Ta)	238mOhm @ 1A, 4.5V	1.5V @ 1mA	2.4nC @ 4.5V	77pF @ 10V	900mW (Tc)	150°C	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSMT6 (SC-95)

SI4952DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 25V 8A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V
Power - Max: 2.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存473,688

Logic Level Gate

25V

8A

23 mOhm @ 7A, 10V

2.2V @ 250µA

18nC @ 10V

680pF @ 13V

2.8W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NTHD3100CT3

ON Semiconductor

MOSFET N/P-CH 20V CHIPFET

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 3.2A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 10V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: ChipFET?

封装: 8-SMD, Flat Lead

库存4,640

Logic Level Gate

20V

2.9A, 3.2A

80 mOhm @ 2.9A, 4.5V

1.2V @ 250µA

2.3nC @ 4.5V

165pF @ 10V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

ChipFET?

TPCF8402(TE85L,F,M

Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V 4A/3.2A VS-8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.2A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
Power - Max: 330mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: VS-8 (2.9x1.5)

封装: 8-SMD, Flat Lead

库存4,704

Logic Level Gate

30V

4A, 3.2A

50 mOhm @ 2A, 10V

2V @ 1mA

10nC @ 10V

470pF @ 10V

330mW

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

VS-8 (2.9x1.5)

BSL205NH6327XTSA1

Infineon Technologies

MOSFET 2N-CH 20V 2.5A 6TSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP6-6

封装: SOT-23-6 Thin, TSOT-23-6

库存5,456

Logic Level Gate, 4.5V Drive

20V

2.5A

50 mOhm @ 2.5A, 4.5V

1.2V @ 11µA

3.2nC @ 4.5V

419pF @ 10V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

PG-TSOP6-6

APTM50HM38FG

Microsemi Corporation

MOSFET 4N-CH 500V 90A SP6

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 90A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
Power - Max: 694W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6

封装: SP6

库存2,592

Standard

500V

90A

45 mOhm @ 45A, 10V

5V @ 5mA

246nC @ 10V

11200pF @ 25V

694W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

TC8020K6-G-M937

Microchip Technology

MOSFET 6N/6P-CH 200V 56VQFN

FET Type: 6 N and 6 P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Supplier Device Package: 56-QFN (8x8)

封装: 56-VFQFN Exposed Pad

库存6,304

Standard

200V

-

8 Ohm @ 1A, 10V

2.4V @ 1mA

-

50pF @ 25V

-

-55°C ~ 150°C (TJ)

Surface Mount

56-VFQFN Exposed Pad

56-QFN (8x8)

TD9944TG-G

Microchip Technology

MOSFET 2N-CH 240V 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 240V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存5,440

Standard

240V

-

6 Ohm @ 500mA, 10V

2V @ 1mA

-

125pF @ 25V

-

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SI7272DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 25A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Power - Max: 22W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封装: PowerPAK? SO-8 Dual

库存96,456

Logic Level Gate

30V

25A

9.3 mOhm @ 15A, 10V

2.5V @ 250µA

26nC @ 10V

1100pF @ 15V

22W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

FDMS3664S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 13A/25A 8-PQFN

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 25A
Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

封装: 8-PowerTDFN

库存2,141,112

Logic Level Gate

30V

13A, 25A

8 mOhm @ 13A, 10V

2.7V @ 250µA

29nC @ 10V

1765pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

Power56

ALD110904SAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8SOIC

FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA
Rds On (Max) @ Id, Vgs: 500 Ohm @ 4.4V
Vgs(th) (Max) @ Id: 420mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存6,360

Standard

10.6V

12mA, 3mA

500 Ohm @ 4.4V

420mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

PMDXB550UNEZ

Nexperia USA Inc.

MOSFET 2N-CH 30V 0.59A 6DFN

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 590mA
Rds On (Max) @ Id, Vgs: 670 mOhm @ 590mA, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V
Power - Max: 285mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: DFN1010B-6

封装: 6-XFDFN Exposed Pad

库存39,966

Standard

30V

590mA

670 mOhm @ 590mA, 4.5V

950mV @ 250µA

1.05nC @ 4.5V

30.3pF @ 15V

285mW

-55°C ~ 150°C (TJ)

Surface Mount

6-XFDFN Exposed Pad

DFN1010B-6

2N7002PS,125

Nexperia USA Inc.

MOSFET 2N-CH 60V 0.32A 6TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 320mA
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Power - Max: 420mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封装: 6-TSSOP, SC-88, SOT-363

库存43,296

Logic Level Gate

60V

320mA

1.6 Ohm @ 500mA, 10V

2.4V @ 250µA

0.8nC @ 4.5V

50pF @ 10V

420mW

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

DMP31D1UVT-7

Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 54pF @ 15V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

封装: -

Request a Quote

-

30V

760mA (Ta)

1Ohm @ 400mA, 4.5V

1.1V @ 250µA

1.6nC @ 8V

54pF @ 15V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

SSFK3220B

Good-Ark Semiconductor

MOSFET 2 N-CH 20V 0.8A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Power - Max: 275mW (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: -

库存17,700

Logic Level Gate, 1.5V Drive

20V

800mA (Tc)

300mOhm @ 500mA, 4.5V

1V @ 250µA

2nC @ 4.5V

75pF @ 10V

275mW (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

SIZ998BDT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 23.7A 8PWRPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)
Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 46.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 2130pF @ 15V
Power - Max: 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (6x5)

封装: -

库存53,151

-

30V

23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)

4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V

2.2V @ 250µA

18nC @ 10V, 46.7nC @ 10V

790pF @ 15V, 2130pF @ 15V

3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (6x5)

PJQ5846-AU_R2_000A1

Panjit International Inc.

MOSFET 2N-CH 40V 9.5A/40A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1258pF @ 25V
Power - Max: 2W (Ta), 38.5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: DFN5060B-8

封装: -

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-

40V

9.5A (Ta), 40A (Tc)

10.5mOhm @ 8A, 10V

2.5V @ 250µA

22nC @ 10V

1258pF @ 25V

2W (Ta), 38.5W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

DFN5060B-8

XP2531GY

YAGEO XSEMI

MOSFET N AND P-CH 16V 3.5A 2.5A

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 16V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 58mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 10V
Power - Max: 1.14W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-26

封装: -

库存3,000

-

16V

3.5A (Ta), 2.5A (Ta)

58mOhm @ 3A, 4.5V

1V @ 250µA

12nC @ 4.5V

585pF @ 10V

1.14W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-26

TQM076NH04DCR-RLG

Taiwan Semiconductor Corporation

MOSFET 2N-CH 40V 15A/40A 8PDFNU

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 25V
Power - Max: 55.6W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PDFNU (5x6)

封装: -

库存14,985

-

40V

15A (Ta), 40A (Tc)

7.6mOhm @ 20A, 10V

3.6V @ 250µA

29nC @ 10V

1850pF @ 25V

55.6W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-PDFNU (5x6)

HP8KB6TB1

Rohm Semiconductor

40V 24A, DUAL NCH+NCH, HSOP8, PO

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Power - Max: 3W (Ta), 21W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-HSOP

封装: -

库存7,500

-

40V

10.5A (Ta), 24A (Tc)

15.7mOhm @ 10.5A, 10V

2.5V @ 1mA

10.6nC @ 10V

530pF @ 20V

3W (Ta), 21W (Tc)

150°C (TJ)

Surface Mount

8-PowerTDFN

8-HSOP

MSCSM170HRM075NG

Microchip Technology

SIC 4N-CH 1700V/1200V 337A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 337A (Tc), 317A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V, 7.8mOhm @ 160A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 15mA, 2.8V @ 12mA
Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V, 928nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V, 12100pF @ 1000V
Power - Max: 1.492kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

Request a Quote

-

1700V (1.7kV), 1200V (1.2kV)

337A (Tc), 317A (Tc)

7.5mOhm @ 180A, 20V, 7.8mOhm @ 160A, 20V

3.2V @ 15mA, 2.8V @ 12mA

1068nC @ 20V, 928nC @ 20V

19800pF @ 1000V, 12100pF @ 1000V

1.492kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

STMFS4854NST1G-ON

onsemi

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

KFCAB21520LE

Nuvoton Technology Corporation

DUAL NCH MOSFET 12, 16A, 1.6MOHM

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 2mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 1.64mA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 10V
Power - Max: 540mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Supplier Device Package: 10-SMD

封装: -

库存3,000

-

12V

16A (Ta)

2mOhm @ 8A, 4.5V

1.4V @ 1.64mA

38nC @ 4V

5250pF @ 10V

540mW (Ta)

150°C

Surface Mount

10-SMD, No Lead

10-SMD

FDMS1D2N03DSD

onsemi

MOSFET 2N-CH 30V 19A/70A 8PQFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc)
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 19A, 10V, 0.97mOhm @ 37A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 320µA, 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V, 117nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1410pF @ 15V, 4860pF @ 15V
Power - Max: 2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PQFN (5x6)

封装: -

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-

30V

19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc)

3.25mOhm @ 19A, 10V, 0.97mOhm @ 37A, 10V

2.5V @ 320µA, 3V @ 1mA

33nC @ 10V, 117nC @ 10V

1410pF @ 15V, 4860pF @ 15V

2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PQFN (5x6)

DMN10H6D2LFDB-7

Diodes Incorporated

MOSFET 2N-CH 100V 0.27A 6UDFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 50V
Power - Max: 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

封装: -

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-

100V

270mA (Ta)

6Ohm @ 190mA, 10V

2V @ 1mA

1.2nC @ 10V

41pF @ 50V

700mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

SQ4917CEY-T1_GE3

Vishay Siliconix

MOSFET 2P-CH 60V 8A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
Power - Max: 5W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

库存10,995

-

60V

8A (Tc)

48mOhm @ 4.3A, 10V

2.5V @ 250µA

65nC @ 10V

1910pF @ 30V

5W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MCB40P1200LB-TRR

IXYS

SIC 2N-CH 1200V 58A 9SMPD

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 58A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Supplier Device Package: 9-SMPD-B

封装: -

Request a Quote

-

1200V (1.2kV)

58A

-

Surface Mount

9-PowerSMD

9-SMPD-B

DI017P03PT2-AQ

Diotec Semiconductor

IC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 20V
Power - Max: 13.1W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-QFN (3x3)

封装: -

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Logic Level Gate

30V

17A (Tc)

30mOhm @ 10A, 10V

2.5V @ 250µA

19.8nC @ 10V

1150pF @ 20V

13.1W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

8-QFN (3x3)

G180C06Y

Goford Semiconductor

MOSFET N/P-CH 60V 50A TO252-4

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V, 23mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA, 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 4.5V, 62nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2429pF @ 30V, 4471pF @ 30V
Power - Max: 69W (Tc), 115W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPAK (4 Leads + Tab), TO-252AD
Supplier Device Package: TO-252-4

封装: -

库存5,889

-

60V

50A (Tc), 60A (Tc)

17mOhm @ 20A, 10V, 23mOhm @ 10A, 10V

2V @ 250µA, 4V @ 250µA

39nC @ 4.5V, 62nC @ 4.5V

2429pF @ 30V, 4471pF @ 30V

69W (Tc), 115W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

TO-252-5, DPAK (4 Leads + Tab), TO-252AD

TO-252-4

MMDF3N04HDR2

onsemi

MOSFET 2N-CH 40V 3.4A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V
Power - Max: 1.39W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

Request a Quote

Logic Level Gate

40V

3.4A

80mOhm @ 3.4A, 10V

3V @ 250µA

28nC @ 10V

900pF @ 32V

1.39W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

QS6K1FRATR

Rohm Semiconductor

MOSFET 2N-CH 30V 1A TSMT6

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 238mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 10V
Power - Max: 900mW (Tc)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSMT6 (SC-95)

封装: -

库存42,042

Logic Level Gate, 2.5V Drive

30V

1A (Ta)

238mOhm @ 1A, 4.5V

1.5V @ 1mA

2.4nC @ 4.5V

77pF @ 10V

900mW (Tc)

150°C

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSMT6 (SC-95)