页 161 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
FW389-TL-2WX	ON Semiconductor	MOSFET N-CH 100V 8SOIC FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,576	-	-	-	-	-	-	-	-	-	-	-	-
AON7804_102	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 9A 8DFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSMD, Flat Leads Supplier Device Package: 8-DFN (3x3)	封装: 8-PowerSMD, Flat Leads	库存3,584	Logic Level Gate	30V	9A	21 mOhm @ 8A, 10V	2.4V @ 250µA	18nC @ 10V	888pF @ 15V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerSMD, Flat Leads	8-DFN (3x3)
SI6973DQ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 4.1A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.1A Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.8A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存35,604	Logic Level Gate	20V	4.1A	30 mOhm @ 4.8A, 4.5V	450mV @ 250µA (Min)	30nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI4622DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 16 mOhm @ 9.6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2458pF @ 15V Power - Max: 3.3W, 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存452,268	Standard	30V	8A	16 mOhm @ 9.6A, 10V	2.5V @ 1mA	60nC @ 10V	2458pF @ 15V	3.3W, 3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NTZD3156CT2G	ON Semiconductor	MOSFET N/P-CH 20V SOT-563 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 72pF @ 16V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: SOT-563, SOT-666	库存4,032	Logic Level Gate	20V	540mA, 430mA	550 mOhm @ 540mA, 4.5V	1V @ 250µA	2.5nC @ 4.5V	72pF @ 16V	250mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
SI7960DP-T1-E3	Vishay Siliconix	MOSFET 2N-CH 60V 6.2A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.2A Rds On (Max) @ Id, Vgs: 21 mOhm @ 9.7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封装: PowerPAK? SO-8 Dual	库存15,120	Logic Level Gate	60V	6.2A	21 mOhm @ 9.7A, 10V	3V @ 250µA	75nC @ 10V	-	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SI6943BDQ-T1-E3	Vishay Siliconix	MOSFET 2P-CH 12V 2.3A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存104,520	Logic Level Gate	12V	2.3A	80 mOhm @ 2.5A, 4.5V	800mV @ 250µA	10nC @ 4.5V	-	800mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI3948DV-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 6-TSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.15W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	封装: SOT-23-6 Thin, TSOT-23-6	库存335,868	Logic Level Gate	30V	-	105 mOhm @ 2.5A, 10V	1V @ 250µA (Min)	3.2nC @ 5V	-	1.15W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
VMM650-01F	IXYS	MOSFET 2N-CH 100V 680A Y3-LI FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 680A Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 500A, 10V Vgs(th) (Max) @ Id: 4V @ 30mA Gate Charge (Qg) (Max) @ Vgs: 1440nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Y3-Li Supplier Device Package: Y3-Li	封装: Y3-Li	库存6,304	Standard	100V	680A	2.2 mOhm @ 500A, 10V	4V @ 30mA	1440nC @ 10V	-	-	-40°C ~ 150°C (TJ)	Chassis Mount	Y3-Li	Y3-Li
DMN3190LDW-13	Diodes Incorporated	MOSFET 2N-CH 30V 1A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1A Rds On (Max) @ Id, Vgs: 190 mOhm @ 1.3A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V Power - Max: 320mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: 6-TSSOP, SC-88, SOT-363	库存3,216	Logic Level Gate	30V	1A	190 mOhm @ 1.3A, 10V	2.8V @ 250µA	2nC @ 10V	87pF @ 20V	320mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
ALD1101ASAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10.6V 8SOIC FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 75 Ohm @ 5V Vgs(th) (Max) @ Id: 1V @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存5,648	Standard	10.6V	-	75 Ohm @ 5V	1V @ 10µA	-	-	500mW	0°C ~ 70°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
APTC60TDUM35PG	Microsemi Corporation	MOSFET 6N-CH 600V 72A SP6-P FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 72A Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Power - Max: 416W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P	封装: SP6	库存7,056	Standard	600V	72A	35 mOhm @ 72A, 10V	3.9V @ 5.4mA	518nC @ 10V	14000pF @ 25V	416W	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6-P
ZDM4306NTC	Diodes Incorporated	MOSFET 2N-CH 60V 2A SOT-223-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Power - Max: 3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-223-8 Supplier Device Package: SOT-223	封装: SOT-223-8	库存3,200	Standard	60V	2A	330 mOhm @ 3A, 10V	3V @ 1mA	-	350pF @ 25V	3W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-8	SOT-223
SI5936DU-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 6A PWRPK CHPFET FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 30 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V Power - Max: 10.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? ChipFET? Dual Supplier Device Package: PowerPAK? ChipFet Dual	封装: PowerPAK? ChipFET? Dual	库存3,616	Logic Level Gate	30V	6A	30 mOhm @ 5A, 10V	2.2V @ 250µA	11nC @ 10V	320pF @ 15V	10.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? ChipFET? Dual	PowerPAK? ChipFet Dual
CJ3139KDW-G	Comchip Technology	MOSFET 2PCH 20V 660MA SOT363 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 660mA (Ta) Rds On (Max) @ Id, Vgs: 520 mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 16V Power - Max: 150mW Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: 6-TSSOP, SC-88, SOT-363	库存4,896	Standard	20V	660mA (Ta)	520 mOhm @ 1A, 4.5V	1.1V @ 250µA	-	170pF @ 16V	150mW	-40°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
SI6954ADQ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 3.1A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.1A Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存9,696	Logic Level Gate	30V	3.1A	53 mOhm @ 3.4A, 10V	1V @ 250µA (Min)	16nC @ 10V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SIA914ADJ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 4.5A SC70-6L FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.7A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V Power - Max: 7.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	封装: PowerPAK? SC-70-6 Dual	库存42,360	Logic Level Gate	20V	4.5A	43 mOhm @ 3.7A, 4.5V	900mV @ 250µA	12.5nC @ 8V	470pF @ 10V	7.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
SI4946BEY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 60V 6.5A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.5A Rds On (Max) @ Id, Vgs: 41 mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V Power - Max: 3.7W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存14,088	Logic Level Gate	60V	6.5A	41 mOhm @ 5.3A, 10V	3V @ 250µA	25nC @ 10V	840pF @ 30V	3.7W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AO4800BL	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 6.9A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 6.9A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Power - Max: 1.9W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	Request a Quote	-	30V	6.9A (Ta)	27mOhm @ 6.9A, 10V	1.5V @ 250µA	12nC @ 4.5V	1100pF @ 15V	1.9W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
RFIS40N10LE	Harris Corporation	MOSFET N-CH 100V 40A FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
AO4614BL_DELTA	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 40V 6A/5A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 45mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V, 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V, 1175pF @ 20V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	Request a Quote	-	40V	6A (Ta), 5A (Ta)	30mOhm @ 6A, 10V, 45mOhm @ 5A, 10V	3V @ 250µA	10.8nC @ 10V, 22nC @ 10V	650pF @ 20V, 1175pF @ 20V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SI3139KDW-TP	Micro Commercial Co	MOSFET 2P-CH 20V 0.66A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 660mA Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V Power - Max: 150mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: -	Request a Quote	-	20V	660mA	520mOhm @ 1A, 4.5V	1.1V @ 250µA	-	175pF @ 16V	150mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMP31D7LDW-13	Diodes Incorporated	MOSFET 2P-CH 0.55A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: -	库存30,000	-	-	550mA (Ta)	900mOhm @ 420mA, 10V	2.6V @ 250µA	-	-	-	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
PJS6830_S1_00001	Panjit International Inc.	MOSFET 2N-CH 20V 2A SOT23-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V Power - Max: 1.25W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	封装: -	Request a Quote	-	20V	2A (Ta)	150mOhm @ 2A, 4.5V	1V @ 250µA	1.8nC @ 4.5V	92pF @ 10V	1.25W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6	SOT-23-6
CAB011A12GM3	Wolfspeed, Inc.	SIC, MODULE, 11M, 1200V, 48 MM, FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 141A (Tj) Rds On (Max) @ Id, Vgs: 13.9mOhm @ 150A, 15V Vgs(th) (Max) @ Id: 3.9V @ 34mA Gate Charge (Qg) (Max) @ Vgs: 354nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V Power - Max: 10mW Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封装: -	Request a Quote	-	1200V (1.2kV)	141A (Tj)	13.9mOhm @ 150A, 15V	3.9V @ 34mA	354nC @ 15V	11000pF @ 1000V	10mW	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
NP29N04QUK-E1-AY	Renesas Electronics Corporation	MOSFET 2N-CH 40V 30A 8HSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 10.1mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Power - Max: 1W (Ta), 44W (Tc) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: 8-HSON (5x5.4)	封装: -	库存7,500	-	40V	30A (Tc)	10.1mOhm @ 15A, 10V	4V @ 250µA	29nC @ 10V	1500pF @ 25V	1W (Ta), 44W (Tc)	175°C	Surface Mount	8-PowerLDFN	8-HSON (5x5.4)
SIZF906ADT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 27A 8POWERPAIR FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair® (6x5)	封装: -	Request a Quote	-	30V	27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc)	3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V	2.2V @ 250µA	49nC @ 10V, 200nC @ 10V	2000pF @ 15V, 8200pF @ 15V	4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (6x5)
DI006H03SQ	Diotec Semiconductor	MOSFET SO8 N+P 30V 0.025OHM 150C FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V, 11.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 631pF @ 15V Power - Max: 1.5W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: -	Request a Quote	-	30V	6A (Ta), 4.2A (Ta)	25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V	2V @ 250µA	11.7nC @ 10V, 11.4nC @ 10V	590pF @ 15V, 631pF @ 15V	1.5W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
UT6MA2TCR	Rohm Semiconductor	MOSFET N/P-CH 30V 4A HUML2020L8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V, 6.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 305pF @ 15V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Supplier Device Package: HUML2020L8	封装: -	库存98,130	-	30V	4A (Ta)	46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V	2.5V @ 1mA	4.3nC @ 10V, 6.7nC @ 10V	180pF @ 15V, 305pF @ 15V	2W (Ta)	150°C (TJ)	Surface Mount	6-PowerUDFN	HUML2020L8
DMN1003UCA6-7	Diodes Incorporated	MOSFET 2N-CH X3-DSN3518-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3315pF @ 6V Power - Max: 2.67W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X3-DSN3518-6	封装: -	库存9,000	-	-	-	-	1.3V @ 1mA	56.5nC @ 4.5V	3315pF @ 6V	2.67W	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	X3-DSN3518-6

FW389-TL-2WX

ON Semiconductor

MOSFET N-CH 100V 8SOIC

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,576

-

AON7804_102

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 9A 8DFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Supplier Device Package: 8-DFN (3x3)

封装: 8-PowerSMD, Flat Leads

库存3,584

Logic Level Gate

30V

9A

21 mOhm @ 8A, 10V

2.4V @ 250µA

18nC @ 10V

888pF @ 15V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerSMD, Flat Leads

8-DFN (3x3)

SI6973DQ-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 4.1A 8TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存35,604

Logic Level Gate

20V

4.1A

30 mOhm @ 4.8A, 4.5V

450mV @ 250µA (Min)

30nC @ 4.5V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SI4622DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 16 mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2458pF @ 15V
Power - Max: 3.3W, 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存452,268

Standard

30V

8A

16 mOhm @ 9.6A, 10V

2.5V @ 1mA

60nC @ 10V

2458pF @ 15V

3.3W, 3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NTZD3156CT2G

ON Semiconductor

MOSFET N/P-CH 20V SOT-563

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA
Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 72pF @ 16V
Power - Max: 250mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: SOT-563, SOT-666

库存4,032

Logic Level Gate

20V

540mA, 430mA

550 mOhm @ 540mA, 4.5V

1V @ 250µA

2.5nC @ 4.5V

72pF @ 16V

250mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

SI7960DP-T1-E3

Vishay Siliconix

MOSFET 2N-CH 60V 6.2A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封装: PowerPAK? SO-8 Dual

库存15,120

Logic Level Gate

60V

6.2A

21 mOhm @ 9.7A, 10V

3V @ 250µA

75nC @ 10V

-

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

SI6943BDQ-T1-E3

Vishay Siliconix

MOSFET 2P-CH 12V 2.3A 8TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存104,520

Logic Level Gate

12V

2.3A

80 mOhm @ 2.5A, 4.5V

800mV @ 250µA

10nC @ 4.5V

-

800mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SI3948DV-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 6-TSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 105 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

封装: SOT-23-6 Thin, TSOT-23-6

库存335,868

Logic Level Gate

30V

-

105 mOhm @ 2.5A, 10V

1V @ 250µA (Min)

3.2nC @ 5V

-

1.15W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

VMM650-01F

IXYS

MOSFET 2N-CH 100V 680A Y3-LI

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 680A
Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 500A, 10V
Vgs(th) (Max) @ Id: 4V @ 30mA
Gate Charge (Qg) (Max) @ Vgs: 1440nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y3-Li
Supplier Device Package: Y3-Li

封装: Y3-Li

库存6,304

Standard

100V

680A

2.2 mOhm @ 500A, 10V

4V @ 30mA

1440nC @ 10V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Y3-Li

DMN3190LDW-13

Diodes Incorporated

MOSFET 2N-CH 30V 1A SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A
Rds On (Max) @ Id, Vgs: 190 mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V
Power - Max: 320mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: 6-TSSOP, SC-88, SOT-363

库存3,216

Logic Level Gate

30V

1A

190 mOhm @ 1.3A, 10V

2.8V @ 250µA

2nC @ 10V

87pF @ 20V

320mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

ALD1101ASAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8SOIC

FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 75 Ohm @ 5V
Vgs(th) (Max) @ Id: 1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存5,648

Standard

10.6V

-

75 Ohm @ 5V

1V @ 10µA

-

500mW

0°C ~ 70°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

APTC60TDUM35PG

Microsemi Corporation

MOSFET 6N-CH 600V 72A SP6-P

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 72A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Power - Max: 416W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P

封装: SP6

库存7,056

Standard

600V

72A

35 mOhm @ 72A, 10V

3.9V @ 5.4mA

518nC @ 10V

14000pF @ 25V

416W

-40°C ~ 150°C (TJ)

Chassis Mount

SP6

SP6-P

ZDM4306NTC

Diodes Incorporated

MOSFET 2N-CH 60V 2A SOT-223-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 330 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Power - Max: 3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-223-8
Supplier Device Package: SOT-223

封装: SOT-223-8

库存3,200

Standard

60V

2A

330 mOhm @ 3A, 10V

3V @ 1mA

-

350pF @ 25V

3W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223-8

SOT-223

SI5936DU-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 6A PWRPK CHPFET

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
Power - Max: 10.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? ChipFET? Dual
Supplier Device Package: PowerPAK? ChipFet Dual

封装: PowerPAK? ChipFET? Dual

库存3,616

Logic Level Gate

30V

6A

30 mOhm @ 5A, 10V

2.2V @ 250µA

11nC @ 10V

320pF @ 15V

10.4W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? ChipFET? Dual

PowerPAK? ChipFet Dual

CJ3139KDW-G

Comchip Technology

MOSFET 2PCH 20V 660MA SOT363

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 520 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 16V
Power - Max: 150mW
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: 6-TSSOP, SC-88, SOT-363

库存4,896

Standard

20V

660mA (Ta)

520 mOhm @ 1A, 4.5V

1.1V @ 250µA

-

170pF @ 16V

150mW

-40°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

SI6954ADQ-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 3.1A 8TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存9,696

Logic Level Gate

30V

3.1A

53 mOhm @ 3.4A, 10V

1V @ 250µA (Min)

16nC @ 10V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SIA914ADJ-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 4.5A SC70-6L

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

封装: PowerPAK? SC-70-6 Dual

库存42,360

Logic Level Gate

20V

4.5A

43 mOhm @ 3.7A, 4.5V

900mV @ 250µA

12.5nC @ 8V

470pF @ 10V

7.8W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

SI4946BEY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 60V 6.5A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.5A
Rds On (Max) @ Id, Vgs: 41 mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 30V
Power - Max: 3.7W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存14,088

Logic Level Gate

60V

6.5A

41 mOhm @ 5.3A, 10V

3V @ 250µA

25nC @ 10V

840pF @ 30V

3.7W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AO4800BL

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 6.9A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Power - Max: 1.9W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

Request a Quote

-

30V

6.9A (Ta)

27mOhm @ 6.9A, 10V

1.5V @ 250µA

12nC @ 4.5V

1100pF @ 15V

1.9W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

RFIS40N10LE

Harris Corporation

MOSFET N-CH 100V 40A

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

AO4614BL_DELTA

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 40V 6A/5A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, 45mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V, 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V, 1175pF @ 20V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

Request a Quote

-

40V

6A (Ta), 5A (Ta)

30mOhm @ 6A, 10V, 45mOhm @ 5A, 10V

3V @ 250µA

10.8nC @ 10V, 22nC @ 10V

650pF @ 20V, 1175pF @ 20V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SI3139KDW-TP

Micro Commercial Co

MOSFET 2P-CH 20V 0.66A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA
Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
Power - Max: 150mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: -

Request a Quote

-

20V

660mA

520mOhm @ 1A, 4.5V

1.1V @ 250µA

-

175pF @ 16V

150mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMP31D7LDW-13

Diodes Incorporated

MOSFET 2P-CH 0.55A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: -

库存30,000

-

550mA (Ta)

900mOhm @ 420mA, 10V

2.6V @ 250µA

-

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

PJS6830_S1_00001

Panjit International Inc.

MOSFET 2N-CH 20V 2A SOT23-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Power - Max: 1.25W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6

封装: -

Request a Quote

-

20V

2A (Ta)

150mOhm @ 2A, 4.5V

1V @ 250µA

1.8nC @ 4.5V

92pF @ 10V

1.25W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

CAB011A12GM3

Wolfspeed, Inc.

SIC, MODULE, 11M, 1200V, 48 MM,

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 141A (Tj)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 150A, 15V
Vgs(th) (Max) @ Id: 3.9V @ 34mA
Gate Charge (Qg) (Max) @ Vgs: 354nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 1000V
Power - Max: 10mW
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封装: -

Request a Quote

-

1200V (1.2kV)

141A (Tj)

13.9mOhm @ 150A, 15V

3.9V @ 34mA

354nC @ 15V

11000pF @ 1000V

10mW

-40°C ~ 150°C (TJ)

Chassis Mount

Module

NP29N04QUK-E1-AY

Renesas Electronics Corporation

MOSFET 2N-CH 40V 30A 8HSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 10.1mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
Power - Max: 1W (Ta), 44W (Tc)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: 8-HSON (5x5.4)

封装: -

库存7,500

-

40V

30A (Tc)

10.1mOhm @ 15A, 10V

4V @ 250µA

29nC @ 10V

1500pF @ 25V

1W (Ta), 44W (Tc)

175°C

Surface Mount

8-PowerLDFN

8-HSON (5x5.4)

SIZF906ADT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 27A 8POWERPAIR

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V
Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair® (6x5)

封装: -

Request a Quote

-

30V

27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc)

3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V

2.2V @ 250µA

49nC @ 10V, 200nC @ 10V

2000pF @ 15V, 8200pF @ 15V

4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair® (6x5)

DI006H03SQ

Diotec Semiconductor

MOSFET SO8 N+P 30V 0.025OHM 150C

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V, 11.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 631pF @ 15V
Power - Max: 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: -

Request a Quote

-

30V

6A (Ta), 4.2A (Ta)

25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V

2V @ 250µA

11.7nC @ 10V, 11.4nC @ 10V

590pF @ 15V, 631pF @ 15V

1.5W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

UT6MA2TCR

Rohm Semiconductor

MOSFET N/P-CH 30V 4A HUML2020L8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V, 6.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 305pF @ 15V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Supplier Device Package: HUML2020L8

封装: -

库存98,130

-

30V

4A (Ta)

46mOhm @ 4A, 10V, 70mOhm @ 4A, 10V

2.5V @ 1mA

4.3nC @ 10V, 6.7nC @ 10V

180pF @ 15V, 305pF @ 15V

2W (Ta)

150°C (TJ)

Surface Mount

6-PowerUDFN

HUML2020L8

DMN1003UCA6-7

Diodes Incorporated

MOSFET 2N-CH X3-DSN3518-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 3315pF @ 6V
Power - Max: 2.67W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: X3-DSN3518-6

封装: -

库存9,000

-

1.3V @ 1mA

56.5nC @ 4.5V

3315pF @ 6V

2.67W

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

X3-DSN3518-6