页 160 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
ECH8649-TL-H	ON Semiconductor	MOSFET 2N-CH 20V 7.5A ECH8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A Rds On (Max) @ Id, Vgs: 17 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	封装: 8-SMD, Flat Lead	库存3,376	Logic Level Gate	20V	7.5A	17 mOhm @ 4A, 4.5V	-	10.8nC @ 4.5V	1060pF @ 10V	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-ECH
SI6981DQ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 4.1A 8-TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.1A Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.8A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 300µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存4,176	Logic Level Gate	20V	4.1A	31 mOhm @ 4.8A, 4.5V	900mV @ 300µA	25nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
GWM160-0055X1-SMDSAM	IXYS	MOSFET 6N-CH 55V 150A ISOPLUS FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 150A Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 17-SMD, Gull Wing Supplier Device Package: ISOPLUS-DIL?	封装: 17-SMD, Gull Wing	库存2,544	Standard	55V	150A	3.3 mOhm @ 100A, 10V	4.5V @ 1mA	105nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	17-SMD, Gull Wing	ISOPLUS-DIL?
AUIRFN8458TR	Infineon Technologies	MOSFET 2N-CH 40V 43A 8PQFN FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 3.9V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V Power - Max: 34W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PQFN (5x6)	封装: 8-PowerTDFN	库存3,120	Standard	40V	43A (Tc)	10 mOhm @ 26A, 10V	3.9V @ 25µA	33nC @ 10V	1060pF @ 25V	34W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	PQFN (5x6)
HCT802TX	TT Electronics/Optek Technology	MOSFET N/P-CH 90V 2A/1.1A SMD FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 2A, 1.1A Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: 6-SMD	封装: 6-SMD, No Lead	库存3,616	Standard	90V	2A, 1.1A	5 Ohm @ 1A, 10V	2.5V @ 1mA	-	70pF @ 25V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	6-SMD
TC1550TG-G	Microchip Technology	MOSFET N/P-CH 500V 8SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 60 Ohm @ 50mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 25V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,472	Standard	500V	-	60 Ohm @ 50mA, 10V	4V @ 1mA	-	55pF @ 25V	-	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
ALD1110ESAL	Advanced Linear Devices Inc.	MOSFET 2N-CH 10V 8SOIC FET Type: 2 N-Channel (Dual) Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 500 Ohm @ 5V Vgs(th) (Max) @ Id: 1.01V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 600mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存6,640	Standard	10V	-	500 Ohm @ 5V	1.01V @ 1µA	-	2.5pF @ 5V	600mW	0°C ~ 70°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AON3816	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 4A 8-DFN FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-DFN (2.9x2.3)	封装: 8-SMD, Flat Lead	库存167,988	Logic Level Gate	20V	-	22 mOhm @ 4A, 4.5V	1.1V @ 250µA	13nC @ 4.5V	1100pF @ 10V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-DFN (2.9x2.3)
DMN67D8LDW-7	Diodes Incorporated	MOSFET 2N-CH 60V 0.23A SOT363 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 230mA Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Power - Max: 320mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: 6-TSSOP, SC-88, SOT-363	库存4,080	Standard	60V	230mA	5 Ohm @ 500mA, 10V	2.5V @ 250µA	0.82nC @ 10V	22pF @ 25V	320mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMN1250UFEL-7	Diodes Incorporated	MOSFET BVDSS: 8V 24V U-QFN1515-1 FET Type: 8 N-Channel, Common Gate, Common Source FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 450 mOhm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V Power - Max: 660mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-UFQFN Exposed Pad Supplier Device Package: U-QFN1515-12	封装: 12-UFQFN Exposed Pad	库存5,760	Standard	12V	2A	450 mOhm @ 200mA, 4.5V	1V @ 250µA	1.9nC @ 4.5V	190pF @ 6V	660mW	-55°C ~ 150°C (TJ)	Surface Mount	12-UFQFN Exposed Pad	U-QFN1515-12
MCQ4559-TP	Micro Commercial Co	N&P-CHANNEL MOSFET, SOP-8 PACKAG FET Type: N and P-Channel FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存4,368	-	60V	4.5A, 3.5A	80 mOhm @ 3.1A, 10V	3V @ 250µA	9nC @ 4.5V	665pF @ 15V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
BSD235CH6327XTSA1	Infineon Technologies	MOSFET N/P-CH 20V SOT363 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 950mA, 530mA Rds On (Max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1.6µA Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 47pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	封装: 6-VSSOP, SC-88, SOT-363	库存1,220,280	Logic Level Gate	20V	950mA, 530mA	350 mOhm @ 950mA, 4.5V	1.2V @ 1.6µA	0.34nC @ 4.5V	47pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
CSD87588N	Texas Instruments	MOSFET 2N-CH 30V 25A 5PTAB FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 736pF @ 15V Power - Max: 6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 5-XFLGA Supplier Device Package: 5-PTAB (3x2.5)	封装: 5-XFLGA	库存118,620	Logic Level Gate	30V	25A	9.6 mOhm @ 15A, 10V	1.9V @ 250µA	4.1nC @ 4.5V	736pF @ 15V	6W	-55°C ~ 150°C (TJ)	Surface Mount	5-XFLGA	5-PTAB (3x2.5)
CSD87588NT	Texas Instruments	MOSFET 2N-CH 30V 25A 5PTAB FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 736pF @ 15V Power - Max: 6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 5-LGA Supplier Device Package: 5-PTAB (5x3.5)	封装: 5-LGA	库存4,992	Logic Level Gate	30V	25A	9.6 mOhm @ 15A, 10V	1.9V @ 250µA	4.1nC @ 4.5V	736pF @ 15V	6W	-55°C ~ 150°C (TJ)	Surface Mount	5-LGA	5-PTAB (5x3.5)
FDPC5030SG	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V PWRCLIP56 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A, 25A Rds On (Max) @ Id, Vgs: 5 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V Power - Max: 1W, 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power Clip 56	封装: 8-PowerWDFN	库存7,216	Standard	30V	17A, 25A	5 mOhm @ 17A, 10V	3V @ 250µA	24nC @ 10V	1715pF @ 15V	1W, 1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power Clip 56
BUK9K17-60EX	Nexperia USA Inc.	MOSFET 2N-CH 60V 26A 56LFPAK FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 26A Rds On (Max) @ Id, Vgs: 15.6 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2223pF @ 25V Power - Max: 53W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	封装: SOT-1205, 8-LFPAK56	库存25,728	Logic Level Gate	60V	26A	15.6 mOhm @ 10A, 10V	2.1V @ 1mA	16.5nC @ 5V	2223pF @ 25V	53W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
SI7956DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 150V 2.6A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 2.6A Rds On (Max) @ Id, Vgs: 105 mOhm @ 4.1A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封装: PowerPAK? SO-8 Dual	库存238,572	Logic Level Gate	150V	2.6A	105 mOhm @ 4.1A, 10V	4V @ 250µA	26nC @ 10V	-	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SI9926CDY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 8A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.3A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存510,372	Logic Level Gate	20V	8A	18 mOhm @ 8.3A, 4.5V	1.5V @ 250µA	33nC @ 10V	1200pF @ 10V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
PMDXB600UNE	Nexperia USA Inc.	MOSFET 2N-CH 20V 0.6A 6DFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA Rds On (Max) @ Id, Vgs: 620 mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V Power - Max: 265mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: 6-DFN (1.1x1)	封装: 6-XFDFN Exposed Pad	库存231,534	Logic Level Gate	20V	600mA	620 mOhm @ 600mA, 4.5V	950mV @ 250µA	0.7nC @ 4.5V	21.3pF @ 10V	265mW	-55°C ~ 150°C (TJ)	Surface Mount	6-XFDFN Exposed Pad	6-DFN (1.1x1)
WAS530M12BM3	Wolfspeed, Inc.	SIC 2N-CH 1200V 630A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 630A (Tc) Rds On (Max) @ Id, Vgs: 3.47mOhm @ 530A, 15V Vgs(th) (Max) @ Id: 3.6V @ 127mA Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	Request a Quote	-	1200V (1.2kV)	630A (Tc)	3.47mOhm @ 530A, 15V	3.6V @ 127mA	1362nC @ 15V	38900pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	-
PSMN013-40VLDX	Nexperia USA Inc.	MOSFET 2N-CH 40V 42A LFPAK56D FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 42A (Ta) Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V Power - Max: 46W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	封装: -	库存17,955	-	40V	42A (Ta)	13.6mOhm @ 10A, 10V	2.2V @ 1mA	19.4nC @ 10V	1160pF @ 25V	46W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
DMP3164LVT-7	Diodes Incorporated	MOSFET 2P-CH 2.8A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	封装: -	库存11,910	-	-	2.8A (Ta)	95mOhm @ 2.7A, 10V	2.1V @ 250µA	-	-	-	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
SQJ204EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 12V 20A PPAK SO8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, 3700pF @ 6V Power - Max: 27W (Tc), 48W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric	封装: -	库存27,000	-	12V	20A (Tc), 60A (Tc)	8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V	1.5V @ 250µA	20nC @ 10V, 50nC @ 10V	1400pF @ 6V, 3700pF @ 6V	27W (Tc), 48W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual Asymmetric
ADP360120W3	STMicroelectronics	SIC 6N-CH 1200V 379A ACEPACK FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 379A (Tj) Rds On (Max) @ Id, Vgs: 3.45mOhm @ 360A, 18V Vgs(th) (Max) @ Id: 4.4V @ 40mA Gate Charge (Qg) (Max) @ Vgs: 944nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 28070pF @ 800V Power - Max: 704W (Tj) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: ACEPACK	封装: -	Request a Quote	-	1200V (1.2kV)	379A (Tj)	3.45mOhm @ 360A, 18V	4.4V @ 40mA	944nC @ 18V	28070pF @ 800V	704W (Tj)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	ACEPACK
MSCMC120AM03CT6LIAG	Microchip Technology	SIC 2N-CH 1200V 631A SP6C LI FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 631A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 500A, 20V Vgs(th) (Max) @ Id: 4V @ 150mA Gate Charge (Qg) (Max) @ Vgs: 1610nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 27900pF @ 1000V Power - Max: 2778W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: SP6C LI	封装: -	Request a Quote	-	1200V (1.2kV)	631A (Tc)	3.4mOhm @ 500A, 20V	4V @ 150mA	1610nC @ 20V	27900pF @ 1000V	2778W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP6C LI
SPF0004	Sanken Electric USA Inc.	MOSFET 2N-CH 275V 6A 20HSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 275V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 260mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V Power - Max: 2.5W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 20-PowerSOIC (0.295", 7.50mm Width) Supplier Device Package: 20-HSOP	封装: -	库存135	-	275V	6A (Ta)	260mOhm @ 6A, 10V	2.6V @ 1mA	-	960pF @ 10V	2.5W (Tc)	150°C (TJ)	Surface Mount	20-PowerSOIC (0.295", 7.50mm Width)	20-HSOP
DMN2024UVT-7	Diodes Incorporated	MOSFET 2N-CH 20V 7A TSOT23-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-23-6	封装: -	Request a Quote	-	20V	7A (Ta)	24mOhm @ 6.5A, 4.5V	900mV @ 250µA	7.1nC @ 4.5V	647pF @ 10V	1W	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-23-6
RJK03P7DPA-00-J5A	Renesas Electronics Corporation	MOSFET 2N-CH 30V 15A/30A 8WPAK FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A, 30A Rds On (Max) @ Id, Vgs: 9.4mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V Power - Max: 10W, 20W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-WFDFN Exposed Pad Supplier Device Package: 8-WPAK	封装: -	Request a Quote	Logic Level Gate, 4.5V Drive	30V	15A, 30A	9.4mOhm @ 7.5A, 10V	-	7.1nC @ 4.5V	1190pF @ 10V	10W, 20W	150°C (TJ)	Surface Mount	8-WFDFN Exposed Pad	8-WPAK
DMNH6065SPDWQ-13	Diodes Incorporated	MOSFET 2N-CH 60V 27A POWERDI50 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 466pF @ 25V Power - Max: 2.4W (Ta), 68W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 (Type R)	封装: -	Request a Quote	-	60V	27A (Tc)	65mOhm @ 15A, 10V	3V @ 250µA	9.5nC @ 10V	466pF @ 25V	2.4W (Ta), 68W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-PowerTDFN	PowerDI5060-8 (Type R)
CAB450M12XM3	Wolfspeed, Inc.	SIC 2N-CH 1200V 450A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 450A Rds On (Max) @ Id, Vgs: 3.7mOhm @ 450A, 15V Vgs(th) (Max) @ Id: 3.6V @ 132mA Gate Charge (Qg) (Max) @ Vgs: 1330nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 800V Power - Max: 850W Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封装: -	库存1,170	-	1200V (1.2kV)	450A	3.7mOhm @ 450A, 15V	3.6V @ 132mA	1330nC @ 15V	38000pF @ 800V	850W	-40°C ~ 175°C (TJ)	Chassis Mount	Module	Module

ECH8649-TL-H

ON Semiconductor

MOSFET 2N-CH 20V 7.5A ECH8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 10V
Power - Max: 1.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH

封装: 8-SMD, Flat Lead

库存3,376

Logic Level Gate

20V

7.5A

17 mOhm @ 4A, 4.5V

-

10.8nC @ 4.5V

1060pF @ 10V

1.5W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-ECH

SI6981DQ-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 4.1A 8-TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.1A
Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存4,176

Logic Level Gate

20V

4.1A

31 mOhm @ 4.8A, 4.5V

900mV @ 300µA

25nC @ 4.5V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

GWM160-0055X1-SMDSAM

IXYS

MOSFET 6N-CH 55V 150A ISOPLUS

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 17-SMD, Gull Wing
Supplier Device Package: ISOPLUS-DIL?

封装: 17-SMD, Gull Wing

库存2,544

Standard

55V

150A

3.3 mOhm @ 100A, 10V

4.5V @ 1mA

105nC @ 10V

-

-55°C ~ 175°C (TJ)

Surface Mount

17-SMD, Gull Wing

ISOPLUS-DIL?

AUIRFN8458TR

Infineon Technologies

MOSFET 2N-CH 40V 43A 8PQFN

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 10 mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V
Power - Max: 34W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PQFN (5x6)

封装: 8-PowerTDFN

库存3,120

Standard

40V

43A (Tc)

10 mOhm @ 26A, 10V

3.9V @ 25µA

33nC @ 10V

1060pF @ 25V

34W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

PQFN (5x6)

HCT802TX

TT Electronics/Optek Technology

MOSFET N/P-CH 90V 2A/1.1A SMD

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 90V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.1A
Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 25V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: 6-SMD

封装: 6-SMD, No Lead

库存3,616

Standard

90V

2A, 1.1A

5 Ohm @ 1A, 10V

2.5V @ 1mA

-

70pF @ 25V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

6-SMD

TC1550TG-G

Microchip Technology

MOSFET N/P-CH 500V 8SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 60 Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 25V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,472

Standard

500V

-

60 Ohm @ 50mA, 10V

4V @ 1mA

-

55pF @ 25V

-

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

ALD1110ESAL

Advanced Linear Devices Inc.

MOSFET 2N-CH 10V 8SOIC

FET Type: 2 N-Channel (Dual) Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 500 Ohm @ 5V
Vgs(th) (Max) @ Id: 1.01V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 600mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存6,640

Standard

10V

-

500 Ohm @ 5V

1.01V @ 1µA

-

2.5pF @ 5V

600mW

0°C ~ 70°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AON3816

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 4A 8-DFN

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-DFN (2.9x2.3)

封装: 8-SMD, Flat Lead

库存167,988

Logic Level Gate

20V

-

22 mOhm @ 4A, 4.5V

1.1V @ 250µA

13nC @ 4.5V

1100pF @ 10V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-DFN (2.9x2.3)

DMN67D8LDW-7

Diodes Incorporated

MOSFET 2N-CH 60V 0.23A SOT363

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 230mA
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
Power - Max: 320mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: 6-TSSOP, SC-88, SOT-363

库存4,080

Standard

60V

230mA

5 Ohm @ 500mA, 10V

2.5V @ 250µA

0.82nC @ 10V

22pF @ 25V

320mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMN1250UFEL-7

Diodes Incorporated

MOSFET BVDSS: 8V 24V U-QFN1515-1

FET Type: 8 N-Channel, Common Gate, Common Source
FET Feature: Standard
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 450 mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V
Power - Max: 660mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-UFQFN Exposed Pad
Supplier Device Package: U-QFN1515-12

封装: 12-UFQFN Exposed Pad

库存5,760

Standard

12V

2A

450 mOhm @ 200mA, 4.5V

1V @ 250µA

1.9nC @ 4.5V

190pF @ 6V

660mW

-55°C ~ 150°C (TJ)

Surface Mount

12-UFQFN Exposed Pad

U-QFN1515-12

MCQ4559-TP

Micro Commercial Co

N&P-CHANNEL MOSFET, SOP-8 PACKAG

FET Type: N and P-Channel
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存4,368

-

60V

4.5A, 3.5A

80 mOhm @ 3.1A, 10V

3V @ 250µA

9nC @ 4.5V

665pF @ 15V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

BSD235CH6327XTSA1

Infineon Technologies

MOSFET N/P-CH 20V SOT363

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 950mA, 530mA
Rds On (Max) @ Id, Vgs: 350 mOhm @ 950mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 1.6µA
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 47pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

封装: 6-VSSOP, SC-88, SOT-363

库存1,220,280

Logic Level Gate

20V

950mA, 530mA

350 mOhm @ 950mA, 4.5V

1.2V @ 1.6µA

0.34nC @ 4.5V

47pF @ 10V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

6-VSSOP, SC-88, SOT-363

PG-SOT363-6

CSD87588N

Texas Instruments

MOSFET 2N-CH 30V 25A 5PTAB

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 736pF @ 15V
Power - Max: 6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-XFLGA
Supplier Device Package: 5-PTAB (3x2.5)

封装: 5-XFLGA

库存118,620

Logic Level Gate

30V

25A

9.6 mOhm @ 15A, 10V

1.9V @ 250µA

4.1nC @ 4.5V

736pF @ 15V

6W

-55°C ~ 150°C (TJ)

Surface Mount

5-XFLGA

5-PTAB (3x2.5)

CSD87588NT

Texas Instruments

MOSFET 2N-CH 30V 25A 5PTAB

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A
Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 736pF @ 15V
Power - Max: 6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-LGA
Supplier Device Package: 5-PTAB (5x3.5)

封装: 5-LGA

库存4,992

Logic Level Gate

30V

25A

9.6 mOhm @ 15A, 10V

1.9V @ 250µA

4.1nC @ 4.5V

736pF @ 15V

6W

-55°C ~ 150°C (TJ)

Surface Mount

5-LGA

5-PTAB (5x3.5)

FDPC5030SG

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V PWRCLIP56

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 25A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V
Power - Max: 1W, 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power Clip 56

封装: 8-PowerWDFN

库存7,216

Standard

30V

17A, 25A

5 mOhm @ 17A, 10V

3V @ 250µA

24nC @ 10V

1715pF @ 15V

1W, 1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Power Clip 56

BUK9K17-60EX

Nexperia USA Inc.

MOSFET 2N-CH 60V 26A 56LFPAK

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 26A
Rds On (Max) @ Id, Vgs: 15.6 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2223pF @ 25V
Power - Max: 53W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

封装: SOT-1205, 8-LFPAK56

库存25,728

Logic Level Gate

60V

26A

15.6 mOhm @ 10A, 10V

2.1V @ 1mA

16.5nC @ 5V

2223pF @ 25V

53W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

SI7956DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 150V 2.6A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 105 mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封装: PowerPAK? SO-8 Dual

库存238,572

Logic Level Gate

150V

2.6A

105 mOhm @ 4.1A, 10V

4V @ 250µA

26nC @ 10V

-

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

SI9926CDY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 8A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.3A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存510,372

Logic Level Gate

20V

8A

18 mOhm @ 8.3A, 4.5V

1.5V @ 250µA

33nC @ 10V

1200pF @ 10V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

PMDXB600UNE

Nexperia USA Inc.

MOSFET 2N-CH 20V 0.6A 6DFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Rds On (Max) @ Id, Vgs: 620 mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
Power - Max: 265mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: 6-DFN (1.1x1)

封装: 6-XFDFN Exposed Pad

库存231,534

Logic Level Gate

20V

600mA

620 mOhm @ 600mA, 4.5V

950mV @ 250µA

0.7nC @ 4.5V

21.3pF @ 10V

265mW

-55°C ~ 150°C (TJ)

Surface Mount

6-XFDFN Exposed Pad

6-DFN (1.1x1)

WAS530M12BM3

Wolfspeed, Inc.

SIC 2N-CH 1200V 630A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 630A (Tc)
Rds On (Max) @ Id, Vgs: 3.47mOhm @ 530A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 127mA
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

Request a Quote

-

1200V (1.2kV)

630A (Tc)

3.47mOhm @ 530A, 15V

3.6V @ 127mA

1362nC @ 15V

38900pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

-

PSMN013-40VLDX

Nexperia USA Inc.

MOSFET 2N-CH 40V 42A LFPAK56D

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V
Power - Max: 46W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

封装: -

库存17,955

-

40V

42A (Ta)

13.6mOhm @ 10A, 10V

2.2V @ 1mA

19.4nC @ 10V

1160pF @ 25V

46W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

DMP3164LVT-7

Diodes Incorporated

MOSFET 2P-CH 2.8A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

封装: -

库存11,910

-

2.8A (Ta)

95mOhm @ 2.7A, 10V

2.1V @ 250µA

-

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

SQJ204EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 12V 20A PPAK SO8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, 3700pF @ 6V
Power - Max: 27W (Tc), 48W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric

封装: -

库存27,000

-

12V

20A (Tc), 60A (Tc)

8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V

1.5V @ 250µA

20nC @ 10V, 50nC @ 10V

1400pF @ 6V, 3700pF @ 6V

27W (Tc), 48W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8 Dual

PowerPAK® SO-8 Dual Asymmetric

ADP360120W3

STMicroelectronics

SIC 6N-CH 1200V 379A ACEPACK

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 379A (Tj)
Rds On (Max) @ Id, Vgs: 3.45mOhm @ 360A, 18V
Vgs(th) (Max) @ Id: 4.4V @ 40mA
Gate Charge (Qg) (Max) @ Vgs: 944nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 28070pF @ 800V
Power - Max: 704W (Tj)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: ACEPACK

封装: -

Request a Quote

-

1200V (1.2kV)

379A (Tj)

3.45mOhm @ 360A, 18V

4.4V @ 40mA

944nC @ 18V

28070pF @ 800V

704W (Tj)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

ACEPACK

MSCMC120AM03CT6LIAG

Microchip Technology

SIC 2N-CH 1200V 631A SP6C LI

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 631A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 500A, 20V
Vgs(th) (Max) @ Id: 4V @ 150mA
Gate Charge (Qg) (Max) @ Vgs: 1610nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 27900pF @ 1000V
Power - Max: 2778W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP6C LI

封装: -

Request a Quote

-

1200V (1.2kV)

631A (Tc)

3.4mOhm @ 500A, 20V

4V @ 150mA

1610nC @ 20V

27900pF @ 1000V

2778W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

SP6C LI

SPF0004

Sanken Electric USA Inc.

MOSFET 2N-CH 275V 6A 20HSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 275V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 260mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
Power - Max: 2.5W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-PowerSOIC (0.295", 7.50mm Width)
Supplier Device Package: 20-HSOP

封装: -

库存135

-

275V

6A (Ta)

260mOhm @ 6A, 10V

2.6V @ 1mA

-

960pF @ 10V

2.5W (Tc)

150°C (TJ)

Surface Mount

20-PowerSOIC (0.295", 7.50mm Width)

20-HSOP

DMN2024UVT-7

Diodes Incorporated

MOSFET 2N-CH 20V 7A TSOT23-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-23-6

封装: -

Request a Quote

-

20V

7A (Ta)

24mOhm @ 6.5A, 4.5V

900mV @ 250µA

7.1nC @ 4.5V

647pF @ 10V

1W

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-23-6

RJK03P7DPA-00-J5A

Renesas Electronics Corporation

MOSFET 2N-CH 30V 15A/30A 8WPAK

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A, 30A
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Power - Max: 10W, 20W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Supplier Device Package: 8-WPAK

封装: -

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Logic Level Gate, 4.5V Drive

30V

15A, 30A

9.4mOhm @ 7.5A, 10V

-

7.1nC @ 4.5V

1190pF @ 10V

10W, 20W

150°C (TJ)

Surface Mount

8-WFDFN Exposed Pad

8-WPAK

DMNH6065SPDWQ-13

Diodes Incorporated

MOSFET 2N-CH 60V 27A POWERDI50

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 466pF @ 25V
Power - Max: 2.4W (Ta), 68W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerDI5060-8 (Type R)

封装: -

Request a Quote

-

60V

27A (Tc)

65mOhm @ 15A, 10V

3V @ 250µA

9.5nC @ 10V

466pF @ 25V

2.4W (Ta), 68W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

8-PowerTDFN

PowerDI5060-8 (Type R)

CAB450M12XM3

Wolfspeed, Inc.

SIC 2N-CH 1200V 450A MODULE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 450A
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 450A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 132mA
Gate Charge (Qg) (Max) @ Vgs: 1330nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 38000pF @ 800V
Power - Max: 850W
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封装: -

库存1,170

-

1200V (1.2kV)

450A

3.7mOhm @ 450A, 15V

3.6V @ 132mA

1330nC @ 15V

38000pF @ 800V

850W

-40°C ~ 175°C (TJ)

Chassis Mount

Module