页 29 - 晶体管 - 双极 (BJT) - 射频 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - 双极 (BJT) - 射频

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图片
零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFR 360F E6327
Infineon Technologies

TRANSISTOR RF NPN 6V TSFP-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
  • Gain: 15.5dB
  • Power - Max: 210mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: PG-TSFP-3
封装: SOT-723
库存5,680
9V
14GHz
1dB @ 1.8GHz
15.5dB
210mW
90 @ 15mA, 3V
35mA
150°C (TJ)
Surface Mount
SOT-723
PG-TSFP-3
BFP405E6740HTSA1
Infineon Technologies

TRANSISTOR NPN RF 4.5V SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
  • Gain: 23dB
  • Power - Max: 75mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
封装: SC-82A, SOT-343
库存7,008
5V
25GHz
1.25dB @ 1.8GHz
23dB
75mW
60 @ 5mA, 4V
25mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFS 469L6 E6327
Infineon Technologies

TRANSISTOR RF TWIN NPN TSLP-6

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 5V, 10V
  • Frequency - Transition: 22GHz, 9GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
  • Gain: 14.5dB
  • Power - Max: 200mW, 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 20mA, 3V / 100 @ 5mA, 3V
  • Current - Collector (Ic) (Max): 50mA, 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN
  • Supplier Device Package: PG-TSLP-6
封装: 6-XFDFN
库存5,632
5V, 10V
22GHz, 9GHz
1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
14.5dB
200mW, 250mW
130 @ 20mA, 3V / 100 @ 5mA, 3V
50mA, 70mA
150°C (TJ)
Surface Mount
6-XFDFN
PG-TSLP-6
hot 2SC4094-T1-A
CEL

RF TRANSISTOR NPN SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 13.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
封装: TO-253-4, TO-253AA
库存250,800
10V
9GHz
1.2dB @ 1GHz
13.5dB
200mW
50 @ 7mA, 3V
65mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
hot 2SC3356-T1B-A
CEL

RF TRANSISTOR NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 13dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
封装: TO-236-3, SC-59, SOT-23-3
库存3,177,348
12V
7GHz
1.1dB @ 1GHz
13dB
200mW
50 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
NE202930-A
CEL

RF TRANSISTOR NPN SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 1.15dB @ 1GHz
  • Gain: 13.5dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: 3-SuperMiniMold (30 PKG)
封装: SC-70, SOT-323
库存2,000
6V
11GHz
1.15dB @ 1GHz
13.5dB
150mW
85 @ 5mA, 5V
100mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
3-SuperMiniMold (30 PKG)
MS2212
Microsemi Corporation

TRANS RF BIPO 50W 1.8A M222

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.1dB ~ 8.9dB
  • Power - Max: 50W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 1.8A
  • Operating Temperature: 250°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M222
  • Supplier Device Package: M222
封装: M222
库存4,640
55V
960MHz ~ 1.215GHz
-
8.1dB ~ 8.9dB
50W
15 @ 500mA, 5V
1.8A
250°C (TJ)
Chassis Mount
M222
M222
FH105A-TR-E
ON Semiconductor

TRANS NPN 30MA 10V MCP6

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.4dB @ 1.5GHz
  • Gain: 10dB @ 1.5GHz
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 0.95 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-MCP
封装: 6-TSSOP, SC-88, SOT-363
库存4,576
10V
8GHz
1.4dB @ 1.5GHz
10dB @ 1.5GHz
150mW
0.95 @ 10mA, 5V
30mA
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-MCP
BF959G
ON Semiconductor

TRANS RF NPN 20V 100MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 700MHz
  • Noise Figure (dB Typ @ f): 3dB @ 200MHz
  • Gain: -
  • Power - Max: 625mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
封装: TO-226-3, TO-92-3 (TO-226AA)
库存4,608
20V
700MHz
3dB @ 200MHz
-
625mW
40 @ 20mA, 10V
100mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
MX0912B251Y,114
Ampleon USA Inc.

TRANSISTOR POWER NPN SOT439A

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.4dB
  • Power - Max: 690W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 15A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-439A
  • Supplier Device Package: CDFM2
封装: SOT-439A
库存5,488
20V
1.215GHz
-
7.4dB
690W
-
15A
200°C (TJ)
Surface Mount
SOT-439A
CDFM2
NE68139-A
CEL

RF TRANSISTOR NPN SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 13.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
封装: TO-253-4, TO-253AA
库存3,904
10V
9GHz
1.2dB @ 1GHz
13.5dB
200mW
50 @ 20mA, 8V
65mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
FMMTH10TC
Diodes Incorporated

TRANSISTOR RF NPN SOT23-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 500MHz
  • Gain: -
  • Power - Max: 330mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
封装: TO-236-3, SC-59, SOT-23-3
库存5,360
25V
650MHz
3dB ~ 5dB @ 500MHz
-
330mW
60 @ 4mA, 10V
25mA
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
MPS3563
ON Semiconductor

TRANS NPN RF SS 12V TO92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 1.5GHz
  • Noise Figure (dB Typ @ f): 6.5dB @ 60MHz
  • Gain: 14dB @ 200MHz
  • Power - Max: 350W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
封装: TO-226-3, TO-92-3 (TO-226AA)
库存3,472
12V
1.5GHz
6.5dB @ 60MHz
14dB @ 200MHz
350W
20 @ 8mA, 10V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
BFG520/X,235
NXP

TRANS RF NPN 9GHZ 15V SOT143B

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
封装: TO-253-4, TO-253AA
库存5,328
15V
9GHz
1.1dB ~ 2.1dB @ 900MHz
-
300mW
60 @ 20mA, 6V
70mA
175°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143B
MDS800
Microsemi Corporation

TRANS RF BIPO 1458W 60A 55ST1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.09GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.6dB
  • Power - Max: 1458W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 60A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST-1
  • Supplier Device Package: 55ST-1
封装: 55ST-1
库存4,240
65V
1.09GHz
-
8.6dB
1458W
20 @ 1A, 5V
60A
200°C (TJ)
Chassis Mount
55ST-1
55ST-1
UMIL3
Microsemi Corporation

TRANS RF BIPO 11W 700MA 55FT3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 225MHz ~ 400MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 11.8db ~ 13dB
  • Power - Max: 11W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100A, 5V
  • Current - Collector (Ic) (Max): 700mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: 55FT
  • Supplier Device Package: 55FT
封装: 55FT
库存4,976
30V
225MHz ~ 400MHz
-
11.8db ~ 13dB
11W
10 @ 100A, 5V
700mA
150°C (TJ)
Chassis, Stud Mount
55FT
55FT
BFU630F,115
NXP

TRANSISTOR NPN SOT343F

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: 21GHz
  • Noise Figure (dB Typ @ f): 0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz
  • Gain: 13dB ~ 22.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 2V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-DFP
封装: SOT-343F
库存3,856
5.5V
21GHz
0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz
13dB ~ 22.5dB
200mW
90 @ 5mA, 2V
30mA
150°C (TJ)
Surface Mount
SOT-343F
4-DFP
PH2731-75L
M/A-Com Technology Solutions

TRANSISTOR BIPOLAR 2.7-3.1GHZ

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.16dB ~ 8.86dB
  • Power - Max: 75W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 7A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存4,928
65V
-
-
8.16dB ~ 8.86dB
75W
-
7A
200°C (TJ)
Chassis Mount
-
-
hot 2SC4562GRL
Panasonic Electronic Components

TRANS NPN 50VCEO 50MA SMINI-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: 250MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-85
  • Supplier Device Package: SMini3-F2
封装: SC-85
库存216,000
50V
250MHz
-
-
150mW
250 @ 2mA, 10V
50mA
150°C (TJ)
Surface Mount
SC-85
SMini3-F2
BFP420FH6327XTSA1
Infineon Technologies

TRANS RF NPN 5.5V 35MA 4TSFP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
  • Gain: 19.5dB
  • Power - Max: 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
封装: 4-SMD, Flat Leads
库存27,150
5.5V
25GHz
1.1dB @ 1.8GHz
19.5dB
160mW
60 @ 5mA, 4V
35mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
MRF455MP
MACOM Technology Solutions

TRANSISTOR,<30MHZ,12.5V,60W,MATC

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 30MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 13dB
  • Power - Max: 175W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
  • Current - Collector (Ic) (Max): 15A
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 211-07, Style 1
  • Supplier Device Package: 211-07, Style 1
封装: -
Request a Quote
18V
30MHz
-
13dB
175W
10 @ 5A, 5V
15A
-
Chassis Mount
211-07, Style 1
211-07, Style 1
PH2226-50M
MACOM Technology Solutions

TRANSISTOR,BIPOLAR,50W,36V,2.20-

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 63V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB
  • Power - Max: 159W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 6A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 2L-FLG
  • Supplier Device Package: -
封装: -
Request a Quote
63V
-
-
8dB
159W
-
6A
200°C (TJ)
Chassis Mount
2L-FLG
-
2SC5617-T3-A
Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Gain: 8.5dB
  • Power - Max: 140mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Lead
  • Supplier Device Package: 3-MINIMOLD
封装: -
Request a Quote
6V
12GHz
1.5dB @ 2GHz
8.5dB
140mW
75 @ 10mA, 3V
30mA
150°C (TJ)
Surface Mount
3-SMD, Flat Lead
3-MINIMOLD
MS2266
Microsemi Corporation

RF POWER TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
44022H
Microsemi Corporation

RF POWER TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
2SC5773JR-TL-E
Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 10.8GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 900MHz
  • Gain: 11.9dB
  • Power - Max: 700mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-MPAK
封装: -
Request a Quote
6V
10.8GHz
1.1dB @ 900MHz
11.9dB
700mW
80 @ 50mA, 5V
80mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
3-MPAK
SD1019
Microsemi Corporation

RF TRANS NPN 35V 136MHZ M130

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Frequency - Transition: 136MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 4.5dB
  • Power - Max: 117W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 9A
  • Operating Temperature: 200°C
  • Mounting Type: Stud Mount
  • Package / Case: M130
  • Supplier Device Package: M130
封装: -
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35V
136MHz
-
4.5dB
117W
5 @ 500mA, 5V
9A
200°C
Stud Mount
M130
M130
CPH6074-TL-E
onsemi

TRANSISTOR

  • Transistor Type: 2 PNP (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.2GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-CPH
封装: -
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15V
1.2GHz
-
-
500mW
60 @ 5mA, 10V
50mA
150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-CPH
5962-9474901MEA
Harris Corporation

NPN TRANSISTOR ARRAY

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
42106HS
Microsemi Corporation

RF POWER TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-