页 5 - Vishay Semiconductor Diodes Division 产品 - 晶体管 - IGBT - 模块 | 深圳黑森尔电子
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Vishay Semiconductor Diodes Division 产品 - 晶体管 - IGBT - 模块

记录 129
页  5/5
图片
零件编号
制造商
描述
封装
库存
数量
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
VS-GT75LP120N
Vishay Semiconductor Diodes Division

IGBT 1200V 150A 543W

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 150A
  • Power - Max: 543W
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 75A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 5.52nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-Pak
  • Supplier Device Package: INT-A-PAK
封装: INT-A-Pak
库存3,984
Half Bridge
1200V
150A
543W
2.35V @ 15V, 75A
5mA
5.52nF @ 25V
Standard
No
150°C (TJ)
Chassis Mount
INT-A-Pak
INT-A-PAK
VS-GA100TS60SF
Vishay Semiconductor Diodes Division

IGBT 600V 220A 780W

  • IGBT Type: PT
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 220A
  • Power - Max: 780W
  • Vce(on) (Max) @ Vge, Ic: 1.28V @ 15V, 100A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 16.25nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-Pak
  • Supplier Device Package: INT-A-PAK
封装: INT-A-Pak
库存4,256
Half Bridge
600V
220A
780W
1.28V @ 15V, 100A
1mA
16.25nF @ 30V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
INT-A-Pak
INT-A-PAK
VS-GA200HS60S1
Vishay Semiconductor Diodes Division

IGBT 600V 480A 830W

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 480A
  • Power - Max: 830W
  • Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 200A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 32.5nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-Pak
  • Supplier Device Package: INT-A-PAK
封装: INT-A-Pak
库存7,296
Half Bridge
600V
480A
830W
1.21V @ 15V, 200A
1mA
32.5nF @ 30V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
INT-A-Pak
INT-A-PAK
VS-GT75NP120N
Vishay Semiconductor Diodes Division

IGBT 1200V 150A 446W INT-A-PAK

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 150A
  • Power - Max: 446W
  • Vce(on) (Max) @ Vge, Ic: 2.08V @ 15V, 75A (Typ)
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 9.45nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-PAK (3 + 4)
  • Supplier Device Package: INT-A-PAK
封装: INT-A-PAK (3 + 4)
库存6,064
Single
1200V
150A
446W
2.08V @ 15V, 75A (Typ)
1mA
9.45nF @ 30V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
INT-A-PAK (3 + 4)
INT-A-PAK
VS-GT400TH120U
Vishay Semiconductor Diodes Division

IGBT 1200V 750A 2344W DIAP

  • IGBT Type: Trench
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 750A
  • Power - Max: 2344W
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 400A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 51.2nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 8)
  • Supplier Device Package: Double INT-A-PAK
封装: Double INT-A-PAK (3 + 8)
库存5,232
Half Bridge
1200V
750A
2344W
2.35V @ 15V, 400A
5mA
51.2nF @ 30V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 8)
Double INT-A-PAK
VS-GT400TH120N
Vishay Semiconductor Diodes Division

IGBT 1200V 600A 2119W DIAP

  • IGBT Type: Trench
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 600A
  • Power - Max: 2119W
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 400A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 28.8nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 8)
  • Supplier Device Package: Double INT-A-PAK
封装: Double INT-A-PAK (3 + 8)
库存3,408
Half Bridge
1200V
600A
2119W
2.15V @ 15V, 400A
5mA
28.8nF @ 25V
Standard
No
150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 8)
Double INT-A-PAK
VS-GT100TP120N
Vishay Semiconductor Diodes Division

IGBT 1200V 180A 652W INT-A-PAK

  • IGBT Type: Trench
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 180A
  • Power - Max: 652W
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 12.8nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-PAK (3 + 4)
  • Supplier Device Package: INT-A-PAK
封装: INT-A-PAK (3 + 4)
库存7,952
Half Bridge
1200V
180A
652W
2.35V @ 15V, 100A
5mA
12.8nF @ 30V
Standard
No
175°C (TJ)
Chassis Mount
INT-A-PAK (3 + 4)
INT-A-PAK
VS-GT100NA120UX
Vishay Semiconductor Diodes Division

IGBT 1200V 134A 463W SOT-227

  • IGBT Type: Trench
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 134A
  • Power - Max: 463W
  • Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 100A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
封装: SOT-227-4, miniBLOC
库存6,880
Single
1200V
134A
463W
2.85V @ 15V, 100A
100µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
VS-GT100LA120UX
Vishay Semiconductor Diodes Division

IGBT 1200V 134A 463W SOT-227

  • IGBT Type: Trench
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 134A
  • Power - Max: 463W
  • Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 100A
  • Current - Collector Cutoff (Max): 100µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
封装: SOT-227-4, miniBLOC
库存3,936
Single
1200V
134A
463W
2.85V @ 15V, 100A
100µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227