页 3 - Vishay Semiconductor Diodes Division 产品 - 晶体管 - IGBT - 模块 | 深圳黑森尔电子
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Vishay Semiconductor Diodes Division 产品 - 晶体管 - IGBT - 模块

记录 129
页  3/5
图片
零件编号
制造商
描述
封装
库存
数量
Configuration
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Power - Max
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Input Capacitance (Cies) @ Vce
Input
NTC Thermistor
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
VS-GB400AH120N
Vishay Semiconductor Diodes Division

IGBT 1200V 650A 2500W INT-A-PAK

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 650A
  • Power - Max: 2500W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A (Typ)
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 30nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (5)
  • Supplier Device Package: Double INT-A-PAK
封装: Double INT-A-PAK (5)
库存7,744
Single
1200V
650A
2500W
1.9V @ 15V, 400A (Typ)
5mA
30nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Double INT-A-PAK (5)
Double INT-A-PAK
VS-GT400TH60N
Vishay Semiconductor Diodes Division

IGBT 600V 530A 1600W DIAP

  • IGBT Type: Trench
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 530A
  • Power - Max: 1600W
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 400A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 30.8nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 8)
  • Supplier Device Package: Double INT-A-PAK
封装: Double INT-A-PAK (3 + 8)
库存3,648
Half Bridge
600V
530A
1600W
2.05V @ 15V, 400A
5mA
30.8nF @ 30V
Standard
No
175°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 8)
Double INT-A-PAK
VS-GB200TH120U
Vishay Semiconductor Diodes Division

IGBT 1200V 330A 1316W INT-A-PAK

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 330A
  • Power - Max: 1316W
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 200A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 16.9nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 4)
  • Supplier Device Package: Double INT-A-PAK
封装: Double INT-A-PAK (3 + 4)
库存4,736
Half Bridge
1200V
330A
1316W
3.6V @ 15V, 200A
5mA
16.9nF @ 30V
Standard
No
150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GB200TH120N
Vishay Semiconductor Diodes Division

IGBT 1200V 360A 1136W INT-A-PAK

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 360A
  • Power - Max: 1136W
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 200A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 14.9nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 4)
  • Supplier Device Package: Double INT-A-PAK
封装: Double INT-A-PAK (3 + 4)
库存2,720
Half Bridge
1200V
360A
1136W
2.35V @ 15V, 200A
5mA
14.9nF @ 25V
Standard
No
150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GB300AH120N
Vishay Semiconductor Diodes Division

IGBT 1200V 620A 2500W INT-A-PAK

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 620A
  • Power - Max: 2500W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 300A (Typ)
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 21nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (5)
  • Supplier Device Package: Double INT-A-PAK
封装: Double INT-A-PAK (5)
库存6,576
Single
1200V
620A
2500W
1.9V @ 15V, 300A (Typ)
5mA
21nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Double INT-A-PAK (5)
Double INT-A-PAK
VS-GB150TH120N
Vishay Semiconductor Diodes Division

IGBT 1200V 300A 1008W INT-A-PAK

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 300A
  • Power - Max: 1008W
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 150A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 11nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 4)
  • Supplier Device Package: Double INT-A-PAK
封装: Double INT-A-PAK (3 + 4)
库存7,456
Half Bridge
1200V
300A
1008W
2.35V @ 15V, 150A
5mA
11nF @ 25V
Standard
No
150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GB200NH120N
Vishay Semiconductor Diodes Division

IGBT 1200V 420A 1562W INT-A-PAK

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 420A
  • Power - Max: 1562W
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 200A (Typ)
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 18nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 4)
  • Supplier Device Package: Double INT-A-PAK
封装: Double INT-A-PAK (3 + 4)
库存2,080
Single
1200V
420A
1562W
1.8V @ 15V, 200A (Typ)
5mA
18nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GB200LH120N
Vishay Semiconductor Diodes Division

IGBT 1200V 370A 1562W INT-A-PAK

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 370A
  • Power - Max: 1562W
  • Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 200A (Typ)
  • Current - Collector Cutoff (Max): 100nA
  • Input Capacitance (Cies) @ Vce: 18nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 4)
  • Supplier Device Package: Double INT-A-PAK
封装: Double INT-A-PAK (3 + 4)
库存3,520
Single
1200V
370A
1562W
2.07V @ 15V, 200A (Typ)
100nA
18nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GA200TH60S
Vishay Semiconductor Diodes Division

IGBT 600V 260A 1042W INT-A-PAK

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 260A
  • Power - Max: 1042W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A (Typ)
  • Current - Collector Cutoff (Max): 5µA
  • Input Capacitance (Cies) @ Vce: 13.1nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 4)
  • Supplier Device Package: Double INT-A-PAK
封装: Double INT-A-PAK (3 + 4)
库存2,832
Half Bridge
600V
260A
1042W
1.9V @ 15V, 200A (Typ)
5µA
13.1nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GB100TH120U
Vishay Semiconductor Diodes Division

IGBT 1200V 200A 1136W INT-A-PAK

  • IGBT Type: NPT
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 200A
  • Power - Max: 1136W
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 100A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 8.45nF @ 20V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 4)
  • Supplier Device Package: Double INT-A-PAK
封装: Double INT-A-PAK (3 + 4)
库存4,128
Half Bridge
1200V
200A
1136W
3.6V @ 15V, 100A
5mA
8.45nF @ 20V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GB100TH120N
Vishay Semiconductor Diodes Division

IGBT 1200V 200A 833W INT-A-PAK

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 200A
  • Power - Max: 833W
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 8.58nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 4)
  • Supplier Device Package: Double INT-A-PAK
封装: Double INT-A-PAK (3 + 4)
库存2,928
Half Bridge
1200V
200A
833W
2.35V @ 15V, 100A
5mA
8.58nF @ 25V
Standard
No
150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GB75YF120UT
Vishay Semiconductor Diodes Division

IGBT 1200V 100A 480W ECONO

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 100A
  • Power - Max: 480W
  • Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 100A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: ECONO2 4PACK
封装: Module
库存7,536
-
1200V
100A
480W
4.5V @ 15V, 100A
250µA
-
Standard
Yes
150°C (TJ)
Chassis Mount
Module
ECONO2 4PACK
VS-GB75YF120N
Vishay Semiconductor Diodes Division

IGBT 1200V 100A 480W ECONO

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 100A
  • Power - Max: 480W
  • Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 100A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: ECONO2 4PACK
封装: Module
库存2,336
-
1200V
100A
480W
4.5V @ 15V, 100A
250µA
-
Standard
No
150°C (TJ)
Chassis Mount
Module
ECONO2 4PACK
VS-GB100LH120N
Vishay Semiconductor Diodes Division

IGBT 1200V 200A 833W INT-A-PAK

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 200A
  • Power - Max: 833W
  • Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 100A (Typ)
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 8.96nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 4)
  • Supplier Device Package: Double INT-A-PAK
封装: Double INT-A-PAK (3 + 4)
库存2,544
Single
1200V
200A
833W
1.77V @ 15V, 100A (Typ)
1mA
8.96nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GB100NH120N
Vishay Semiconductor Diodes Division

IGBT 1200V 200A 833W INT-A-PAK

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 200A
  • Power - Max: 833W
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 8.58nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 4)
  • Supplier Device Package: Double INT-A-PAK
封装: Double INT-A-PAK (3 + 4)
库存3,360
Single
1200V
200A
833W
2.35V @ 15V, 100A
5mA
8.58nF @ 25V
Standard
No
150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GB400TH120U
Vishay Semiconductor Diodes Division

IGBT 1200V 660A 2660W INT-A-PAK

  • IGBT Type: NPT
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 660A
  • Power - Max: 2660W
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 400A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 33.7nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 4)
  • Supplier Device Package: Double INT-A-PAK
封装: Double INT-A-PAK (3 + 4)
库存2,176
Half Bridge
1200V
660A
2660W
3.6V @ 15V, 400A
5mA
33.7nF @ 30V
Standard
No
150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GB400TH120N
Vishay Semiconductor Diodes Division

IGBT 1200V 800A 2604W INT-A-PAK

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 800A
  • Power - Max: 2604W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A (Typ)
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 32.7nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 4)
  • Supplier Device Package: Double INT-A-PAK
封装: Double INT-A-PAK (3 + 4)
库存6,128
Half Bridge
1200V
800A
2604W
1.9V @ 15V, 400A (Typ)
5mA
32.7nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GB75TP120N
Vishay Semiconductor Diodes Division

IGBT 1200V 150A 543W INT-A-PAK

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 150A
  • Power - Max: 543W
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 75A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 5.52nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-PAK (3 + 4)
  • Supplier Device Package: INT-A-PAK
封装: INT-A-PAK (3 + 4)
库存6,704
Half Bridge
1200V
150A
543W
2.35V @ 15V, 75A
5mA
5.52nF @ 25V
Standard
No
150°C (TJ)
Chassis Mount
INT-A-PAK (3 + 4)
INT-A-PAK
VS-GB600AH120N
Vishay Semiconductor Diodes Division

IGBT 1200V 910A 3125W INT-A-PAK

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 910A
  • Power - Max: 3125W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 600A (Typ)
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 41nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (5)
  • Supplier Device Package: Double INT-A-PAK
封装: Double INT-A-PAK (5)
库存3,488
Single
1200V
910A
3125W
1.9V @ 15V, 600A (Typ)
5mA
41nF @ 25V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Double INT-A-PAK (5)
Double INT-A-PAK
VS-GA400TD60S
Vishay Semiconductor Diodes Division

IGBT 600V 750A 1563W INT-A-PAK

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 750A
  • Power - Max: 1563W
  • Vce(on) (Max) @ Vge, Ic: 1.52V @ 15V, 400A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Dual INT-A-PAK (3 + 8)
  • Supplier Device Package: Dual INT-A-PAK
封装: Dual INT-A-PAK (3 + 8)
库存7,968
Half Bridge
600V
750A
1563W
1.52V @ 15V, 400A
1mA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Dual INT-A-PAK (3 + 8)
Dual INT-A-PAK
VS-GT100TP60N
Vishay Semiconductor Diodes Division

IGBT 600V 160A 417W INT-A-PAK

  • IGBT Type: Trench
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 160A
  • Power - Max: 417W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 7.71nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-PAK (3 + 4)
  • Supplier Device Package: INT-A-PAK
封装: INT-A-PAK (3 + 4)
库存2,320
Half Bridge
600V
160A
417W
2.1V @ 15V, 100A
5mA
7.71nF @ 30V
Standard
No
175°C (TJ)
Chassis Mount
INT-A-PAK (3 + 4)
INT-A-PAK
VS-GT300YH120N
Vishay Semiconductor Diodes Division

IGBT 1200V 341A 1042W DIAP

  • IGBT Type: Trench
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 341A
  • Power - Max: 1042W
  • Vce(on) (Max) @ Vge, Ic: 2.17V @ 15V, 300A (Typ)
  • Current - Collector Cutoff (Max): 300µA
  • Input Capacitance (Cies) @ Vce: 36nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 8)
  • Supplier Device Package: Double INT-A-PAK
封装: Double INT-A-PAK (3 + 8)
库存6,176
Half Bridge
1200V
341A
1042W
2.17V @ 15V, 300A (Typ)
300µA
36nF @ 30V
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 8)
Double INT-A-PAK
VS-GB400AH120U
Vishay Semiconductor Diodes Division

IGBT 1200V 550A 2841W INT-A-PAK

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 550A
  • Power - Max: 2841W
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 400A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 33.7nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (5)
  • Supplier Device Package: Double INT-A-PAK
封装: Double INT-A-PAK (5)
库存3,696
Single
1200V
550A
2841W
3.6V @ 15V, 400A
5mA
33.7nF @ 30V
Standard
No
150°C (TJ)
Chassis Mount
Double INT-A-PAK (5)
Double INT-A-PAK
VS-GB300NH120N
Vishay Semiconductor Diodes Division

IGBT 1200V 500A 1645W INT-A-PAK

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 500A
  • Power - Max: 1645W
  • Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 300A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 21.2nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 4)
  • Supplier Device Package: Double INT-A-PAK
封装: Double INT-A-PAK (3 + 4)
库存5,760
Single
1200V
500A
1645W
2.45V @ 15V, 300A
5mA
21.2nF @ 25V
Standard
No
150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GB300LH120N
Vishay Semiconductor Diodes Division

IGBT 1200V 500A 1645W INT-A-PAK

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 500A
  • Power - Max: 1645W
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 300A (Typ)
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 21.2nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 4)
  • Supplier Device Package: Double INT-A-PAK
封装: Double INT-A-PAK (3 + 4)
库存5,904
Single
1200V
500A
1645W
2V @ 15V, 300A (Typ)
5mA
21.2nF @ 25V
Standard
No
150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK
VS-GA300TD60S
Vishay Semiconductor Diodes Division

IGBT 600V 530A 1136W INT-A-PAK

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 530A
  • Power - Max: 1136W
  • Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 300A
  • Current - Collector Cutoff (Max): 750µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Dual INT-A-PAK (3 + 8)
  • Supplier Device Package: Dual INT-A-PAK
封装: Dual INT-A-PAK (3 + 8)
库存2,144
Half Bridge
600V
530A
1136W
1.45V @ 15V, 300A
750µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Dual INT-A-PAK (3 + 8)
Dual INT-A-PAK
VS-GP400TD60S
Vishay Semiconductor Diodes Division

IGBT

  • IGBT Type: PT, Trench
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 758A
  • Power - Max: 1563W
  • Vce(on) (Max) @ Vge, Ic: 1.52V @ 15V, 400A
  • Current - Collector Cutoff (Max): 200µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Dual INT-A-PAK (3 + 8)
  • Supplier Device Package: Dual INT-A-PAK
封装: Dual INT-A-PAK (3 + 8)
库存5,728
Half Bridge
600V
758A
1563W
1.52V @ 15V, 400A
200µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Dual INT-A-PAK (3 + 8)
Dual INT-A-PAK
VS-GT50TP60N
Vishay Semiconductor Diodes Division

IGBT 600V 85A 208W INT-A-PAK

  • IGBT Type: Trench
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 85A
  • Power - Max: 208W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Current - Collector Cutoff (Max): 1mA
  • Input Capacitance (Cies) @ Vce: 3.03nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-PAK (3 + 4)
  • Supplier Device Package: INT-A-PAK
封装: INT-A-PAK (3 + 4)
库存3,536
Half Bridge
600V
85A
208W
2.1V @ 15V, 50A
1mA
3.03nF @ 30V
Standard
No
175°C (TJ)
Chassis Mount
INT-A-PAK (3 + 4)
INT-A-PAK
VS-GP300TD60S
Vishay Semiconductor Diodes Division

IGBT

  • IGBT Type: PT, Trench
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 580A
  • Power - Max: 1136W
  • Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 300A
  • Current - Collector Cutoff (Max): 150µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Dual INT-A-PAK (3 + 8)
  • Supplier Device Package: Dual INT-A-PAK
封装: Dual INT-A-PAK (3 + 8)
库存6,688
Half Bridge
600V
580A
1136W
1.45V @ 15V, 300A
150µA
-
Standard
No
-40°C ~ 150°C (TJ)
Chassis Mount
Dual INT-A-PAK (3 + 8)
Dual INT-A-PAK
VS-GB150TH120U
Vishay Semiconductor Diodes Division

IGBT 1200V 280A 1147W INT-A-PAK

  • IGBT Type: -
  • Configuration: Half Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 280A
  • Power - Max: 1147W
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 150A
  • Current - Collector Cutoff (Max): 5mA
  • Input Capacitance (Cies) @ Vce: 12.7nF @ 30V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Double INT-A-PAK (3 + 4)
  • Supplier Device Package: Double INT-A-PAK
封装: Double INT-A-PAK (3 + 4)
库存3,312
Half Bridge
1200V
280A
1147W
3.6V @ 15V, 150A
5mA
12.7nF @ 30V
Standard
No
150°C (TJ)
Chassis Mount
Double INT-A-PAK (3 + 4)
Double INT-A-PAK