页 93 - Toshiba Semiconductor and Storage 产品

零件编号	制造商	描述	封装	库存
TPC8092,LQ(S	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 15A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 9 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	封装: 8-SOIC (0.154", 3.90mm Width)	库存2,288
TPN22006NH,LQ	Toshiba Semiconductor and Storage	MOSFET N CH 60V 9A 8-TSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta), 18W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 4.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	封装: 8-PowerVDFN	库存3,328
SSM6K504NU,LF	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 9A UDFN6B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFNB (2x2) Package / Case: 6-WDFN Exposed Pad	封装: 6-WDFN Exposed Pad	库存27,780
HN1C01FE-Y,LF	Toshiba Semiconductor and Storage	TRANS 2NPN 50V 0.15A ES6 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封装: SOT-563, SOT-666	库存35,664
CUS551V30,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 500MA USC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 470mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC Operating Temperature - Junction: 125°C (Max)	封装: SC-76, SOD-323	库存4,528
1SS417CT,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 100MA FSC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 620mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 40V Capacitance @ Vr, F: 15pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: fSC Operating Temperature - Junction: 125°C (Max)	封装: 2-SMD, Flat Lead	库存3,536
TA58L06S,SUMISQ(M	Toshiba Semiconductor and Storage	IC REG LINEAR 250MA 3HSIP Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 250mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 105°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: 3-HSIP	封装: TO-220-3 Full Pack	库存6,704
TCR2EE33,LM(CT	Toshiba Semiconductor and Storage	IC REG LINEAR 3.3V 200MA ESV Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3.3V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 60µA PSRR: 73dB (1kHz) Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	封装: SOT-553	库存35,394
TC58NVG2S0HTA00	Toshiba Semiconductor and Storage	IC EEPROM 4GBIT 25NS 48TSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	封装: 48-TFSOP (0.724", 18.40mm Width)	库存39,720
TC7SPN334L6X,LF	Toshiba Semiconductor and Storage	IC BUS BUFFER 1CH 250MW MP6C Translator Type: Voltage Level Channel Type: Unidirectional Number of Circuits: 1 Channels per Circuit: 1 Voltage - VCCA: 1.1V ~ 2.7V Voltage - VCCB: 1.65V ~ 3.6V Input Signal: - Output Signal: - Output Type: Non-Inverted Data Rate: - Operating Temperature: -40°C ~ 85°C (TA) Features: - Mounting Type: Surface Mount Package / Case: 6-UFDFN Supplier Device Package: 6-MP6C (1.45x1.0)	封装: 6-UFDFN	库存51,960
TC7WBD125AFKT5LF	Toshiba Semiconductor and Storage	DUAL BUS SWITCH US8 Type: Bus Switch Circuit: 1 x 1:1 Independent Circuits: 2 Current - Output High, Low: - Voltage Supply Source: Single Supply Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 8-VFSOP (0.091", 2.30mm Width) Supplier Device Package: US8	封装: 8-VFSOP (0.091", 2.30mm Width)	库存26,148
TC74VHC32FTELM	Toshiba Semiconductor and Storage	IC GATE OR 4CH 2-INP 14-TSSOP Logic Type: OR Gate Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.5V Logic Level - High: 1.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-TSSOP Package / Case: 14-TSSOP (0.173", 4.40mm Width)	封装: 14-TSSOP (0.173", 4.40mm Width)	库存6,816
TC7WH08FK,LJ(CT	Toshiba Semiconductor and Storage	IC GATE AND 2CH 2-INP US8 Logic Type: AND Gate Number of Circuits: 2 Number of Inputs: 2 Features: - Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.5V Logic Level - High: 1.5V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: US8 Package / Case: 8-VFSOP (0.091", 2.30mm Width)	封装: 8-VFSOP (0.091", 2.30mm Width)	库存136,020
TC74VHCT244AFTEL	Toshiba Semiconductor and Storage	IC BUFF/DVR TRI-ST DUAL 20TSSOP Logic Type: Buffer, Non-Inverting Number of Elements: 2 Number of Bits per Element: 4 Input Type: - Output Type: Push-Pull Current - Output High, Low: 8mA, 8mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP	封装: 20-TSSOP (0.173", 4.40mm Width)	库存7,024
TC7SZ125FU,LJ(CT	Toshiba Semiconductor and Storage	IC BUS BUFFER TRI-ST N-INV USV5 Logic Type: Buffer, Non-Inverting Number of Elements: 1 Number of Bits per Element: 1 Input Type: - Output Type: Push-Pull Current - Output High, Low: 32mA, 32mA Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	封装: 5-TSSOP, SC-70-5, SOT-353	库存36,000
TL1L3-LW1,L	Toshiba Semiconductor and Storage	LED LETERAS WARM WHT 3000K 2SMD Color: White, Warm CCT (K): 3000K Flux @ 85°C, Current - Test: - Flux @ 25°C, Current - Test: 119 lm (Typ) Current - Test: 350mA Voltage - Forward (Vf) (Typ): 2.85V Lumens/Watt @ Current - Test: 119 lm/W CRI (Color Rendering Index): 80 Current - Max: 1A Viewing Angle: 100° Mounting Type: Surface Mount Package / Case: 1414 (3535 Metric) Supplier Device Package: 3535 Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm) Height - Seated (Max): 0.099" (2.52mm)	封装: 1414 (3535 Metric)	库存5,166
DF6F6.8MTU,LF	Toshiba Semiconductor and Storage	TVS DIODE 5VWM 24VC Type: Steering (Rail to Rail) Unidirectional Channels: 4 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 5V (Max) Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 24V Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Power - Peak Pulse: - Power Line Protection: Yes Applications: General Purpose Capacitance @ Frequency: 0.6pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	封装: 6-SMD, Flat Leads	库存24,888
TLP222A-2(LF1,F)	Toshiba Semiconductor and Storage	OPTO RELAY 2CH 8SMD Circuit: DPST (2 Form A) Output Type: AC, DC On-State Resistance (Max): 2 Ohm Load Current: 500mA Voltage - Input: 1.15VDC Voltage - Load: 0 ~ 60 V Mounting Type: Surface Mount Termination Style: Gull Wing Package / Case: 8-SMD (0.300", 7.62mm) Supplier Device Package: 8-SMD Relay Type: Relay	封装: 8-SMD (0.300", 7.62mm)	库存25,746
TLP504A(GB,F)	Toshiba Semiconductor and Storage	OPTOISOLTR 2.5KV 2CH TRANS 8-DIP Number of Channels: 2 Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: DC Output Type: Transistor Voltage - Output (Max): 55V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.15V Current - DC Forward (If) (Max): 60mA Vce Saturation (Max): 400mV Operating Temperature: -55°C ~ 100°C Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	封装: 8-DIP (0.300", 7.62mm)	库存2,466
TLP5214(D4-TP,E	Toshiba Semiconductor and Storage	OPTOISO 5KV GATE DRIVER 16SO Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Rise / Fall Time (Typ): 32ns, 18ns Current - Output High, Low: 3A, 3A Current - Peak Output: 4A Voltage - Forward (Vf) (Typ): 1.7V (Max) Current - DC Forward (If) (Max): 25mA Voltage - Supply: 15 V ~ 30 V Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SO Approvals: CQC, CSA, cUL, UL, VDE	封装: 16-SOIC (0.295", 7.50mm Width)	库存17,868
TC7WZ08FK,LJ(CT	Toshiba Semiconductor and Storage	IC GATE AND 2CH 4-INP US8 Logic Type: AND Gate Number of Circuits: 2 Number of Inputs: 4 Features: - Voltage - Supply: 1.65 V ~ 5.5 V Current - Quiescent (Max): 1µA Current - Output High, Low: 32mA, 32mA Logic Level - Low: - Logic Level - High: - Max Propagation Delay @ V, Max CL: 3.7ns @ 5V, 50pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: US8 Package / Case: 8-VFSOP (0.091", 2.30mm Width)	封装: 8-VFSOP (0.091", 2.30mm Width)	库存3,456
CRS30I40A-TE85L-QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 3A S-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: 62pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150°C (Max)	封装: -	库存14,064
TK110Z65Z-S1F	Toshiba Semiconductor and Storage	POWER MOSFET TRANSISTOR TO-247-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.02mA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-247-4L(T) Package / Case: TO-247-4	封装: -	库存21
RN1118MFV-L3F	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A VESM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	封装: -	Request a Quote
TJ90S04M3L-LQ	Toshiba Semiconductor and Storage	PB-F POWER MOSFET TRANSISTOR DPA FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V Vgs (Max): +10V, -20V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	库存504
TK10A50W-S5X	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	封装: -	库存414
SSM6J401TU-LF	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 2.5A UF6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: UF6 Package / Case: 6-SMD, Flat Leads	封装: -	库存7,923
TCTH021AE-LF-CT	Toshiba Semiconductor and Storage	OVER TEMP DETECTION IC IPTCO: 10 Type: Thermal Number of Voltages Monitored: 1 Output: Push-Pull, Totem Pole Reset: - Reset Timeout: 214µs Typical Voltage - Threshold: 0.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	封装: -	库存23,940
TPCP8407-LF	Toshiba Semiconductor and Storage	MOSFET N/P-CH 40V 5A/4A PS-8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4A (Ta) Rds On (Max) @ Id, Vgs: 36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V, 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 10V, 810pF @ 10V Power - Max: 690mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: PS-8	封装: -	库存9,984
TCR2LN12-LF-SE	Toshiba Semiconductor and Storage	LDO REG VOUT=1.2V I=200MA Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.2V Voltage - Output (Max): - Voltage Dropout (Max): 1.23V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 2 µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	封装: -	库存22,380

TPC8092,LQ(S

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 15A 8SOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 9 mOhm @ 7.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

库存2,288

TPN22006NH,LQ

Toshiba Semiconductor and Storage

MOSFET N CH 60V 9A 8-TSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs(th) (Max) @ Id: 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 700mW (Ta), 18W (Tc)
Rds On (Max) @ Id, Vgs: 22 mOhm @ 4.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Package / Case: 8-PowerVDFN

封装: 8-PowerVDFN

库存3,328

SSM6K504NU,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 9A UDFN6B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 4A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-UDFNB (2x2)
Package / Case: 6-WDFN Exposed Pad

封装: 6-WDFN Exposed Pad

库存27,780

HN1C01FE-Y,LF

Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A ES6

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封装: SOT-563, SOT-666

库存35,664

CUS551V30,H3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 500MA USC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 470mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: USC
Operating Temperature - Junction: 125°C (Max)

封装: SC-76, SOD-323

库存4,528

1SS417CT,L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 100MA FSC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 620mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 40V
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: fSC
Operating Temperature - Junction: 125°C (Max)

封装: 2-SMD, Flat Lead

库存3,536

TA58L06S,SUMISQ(M

Toshiba Semiconductor and Storage

IC REG LINEAR 250MA 3HSIP

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 250mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 105°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: 3-HSIP

封装: TO-220-3 Full Pack

库存6,704

TCR2EE33,LM(CT

Toshiba Semiconductor and Storage

IC REG LINEAR 3.3V 200MA ESV

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3.3V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 60µA
PSRR: 73dB (1kHz)
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

封装: SOT-553

库存35,394

TC58NVG2S0HTA00

Toshiba Semiconductor and Storage

IC EEPROM 4GBIT 25NS 48TSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM - NAND
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

封装: 48-TFSOP (0.724", 18.40mm Width)

库存39,720

TC7SPN334L6X,LF

Toshiba Semiconductor and Storage

IC BUS BUFFER 1CH 250MW MP6C

Translator Type: Voltage Level
Channel Type: Unidirectional
Number of Circuits: 1
Channels per Circuit: 1
Voltage - VCCA: 1.1V ~ 2.7V
Voltage - VCCB: 1.65V ~ 3.6V
Input Signal: -
Output Signal: -
Output Type: Non-Inverted
Data Rate: -
Operating Temperature: -40°C ~ 85°C (TA)
Features: -
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Supplier Device Package: 6-MP6C (1.45x1.0)

封装: 6-UFDFN

库存51,960

TC7WBD125AFKT5LF

Toshiba Semiconductor and Storage

DUAL BUS SWITCH US8

Type: Bus Switch
Circuit: 1 x 1:1
Independent Circuits: 2
Current - Output High, Low: -
Voltage Supply Source: Single Supply
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Supplier Device Package: US8

封装: 8-VFSOP (0.091", 2.30mm Width)

库存26,148

TC74VHC32FTELM

Toshiba Semiconductor and Storage

IC GATE OR 4CH 2-INP 14-TSSOP

Logic Type: OR Gate
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 2 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.5V
Logic Level - High: 1.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)

封装: 14-TSSOP (0.173", 4.40mm Width)

库存6,816

TC7WH08FK,LJ(CT

Toshiba Semiconductor and Storage

IC GATE AND 2CH 2-INP US8

Logic Type: AND Gate
Number of Circuits: 2
Number of Inputs: 2
Features: -
Voltage - Supply: 2 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.5V
Logic Level - High: 1.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: US8
Package / Case: 8-VFSOP (0.091", 2.30mm Width)

封装: 8-VFSOP (0.091", 2.30mm Width)

库存136,020

TC74VHCT244AFTEL

Toshiba Semiconductor and Storage

IC BUFF/DVR TRI-ST DUAL 20TSSOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Number of Bits per Element: 4
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP

封装: 20-TSSOP (0.173", 4.40mm Width)

库存7,024

TC7SZ125FU,LJ(CT

Toshiba Semiconductor and Storage

IC BUS BUFFER TRI-ST N-INV USV5

Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Number of Bits per Element: 1
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV

封装: 5-TSSOP, SC-70-5, SOT-353

库存36,000

TL1L3-LW1,L

Toshiba Semiconductor and Storage

LED LETERAS WARM WHT 3000K 2SMD

Color: White, Warm
CCT (K): 3000K
Flux @ 85°C, Current - Test: -
Flux @ 25°C, Current - Test: 119 lm (Typ)
Current - Test: 350mA
Voltage - Forward (Vf) (Typ): 2.85V
Lumens/Watt @ Current - Test: 119 lm/W
CRI (Color Rendering Index): 80
Current - Max: 1A
Viewing Angle: 100°
Mounting Type: Surface Mount
Package / Case: 1414 (3535 Metric)
Supplier Device Package: 3535
Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
Height - Seated (Max): 0.099" (2.52mm)

封装: 1414 (3535 Metric)

库存5,166

DF6F6.8MTU,LF

Toshiba Semiconductor and Storage

TVS DIODE 5VWM 24VC

Type: Steering (Rail to Rail)
Unidirectional Channels: 4
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 5V (Max)
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 24V
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Power - Peak Pulse: -
Power Line Protection: Yes
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: UF6

封装: 6-SMD, Flat Leads

库存24,888

TLP222A-2(LF1,F)

Toshiba Semiconductor and Storage

OPTO RELAY 2CH 8SMD

Circuit: DPST (2 Form A)
Output Type: AC, DC
On-State Resistance (Max): 2 Ohm
Load Current: 500mA
Voltage - Input: 1.15VDC
Voltage - Load: 0 ~ 60 V
Mounting Type: Surface Mount
Termination Style: Gull Wing
Package / Case: 8-SMD (0.300", 7.62mm)
Supplier Device Package: 8-SMD
Relay Type: Relay

封装: 8-SMD (0.300", 7.62mm)

库存25,746

TLP504A(GB,F)

Toshiba Semiconductor and Storage

OPTOISOLTR 2.5KV 2CH TRANS 8-DIP

Number of Channels: 2
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Current Transfer Ratio (Max): 600% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 55V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.15V
Current - DC Forward (If) (Max): 60mA
Vce Saturation (Max): 400mV
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP

封装: 8-DIP (0.300", 7.62mm)

库存2,466

TLP5214(D4-TP,E

Toshiba Semiconductor and Storage

OPTOISO 5KV GATE DRIVER 16SO

Technology: Optical Coupling
Number of Channels: 1
Voltage - Isolation: 5000Vrms
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Rise / Fall Time (Typ): 32ns, 18ns
Current - Output High, Low: 3A, 3A
Current - Peak Output: 4A
Voltage - Forward (Vf) (Typ): 1.7V (Max)
Current - DC Forward (If) (Max): 25mA
Voltage - Supply: 15 V ~ 30 V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SO
Approvals: CQC, CSA, cUL, UL, VDE

封装: 16-SOIC (0.295", 7.50mm Width)

库存17,868

TC7WZ08FK,LJ(CT

Toshiba Semiconductor and Storage

IC GATE AND 2CH 4-INP US8

Logic Type: AND Gate
Number of Circuits: 2
Number of Inputs: 4
Features: -
Voltage - Supply: 1.65 V ~ 5.5 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 32mA, 32mA
Logic Level - Low: -
Logic Level - High: -
Max Propagation Delay @ V, Max CL: 3.7ns @ 5V, 50pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: US8
Package / Case: 8-VFSOP (0.091", 2.30mm Width)

封装: 8-VFSOP (0.091", 2.30mm Width)

库存3,456

CRS30I40A-TE85L-QM

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 3A S-FLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Capacitance @ Vr, F: 62pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)

封装: -

库存14,064

TK110Z65Z-S1F

Toshiba Semiconductor and Storage

POWER MOSFET TRANSISTOR TO-247-4

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1.02mA
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-247-4L(T)
Package / Case: TO-247-4

封装: -

库存21

RN1118MFV-L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 47 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

封装: -

Request a Quote

TJ90S04M3L-LQ

Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DPA

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V
Vgs (Max): +10V, -20V
FET Feature: -
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: DPAK+
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

库存504

TK10A50W-S5X

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.9A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

封装: -

库存414

SSM6J401TU-LF

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 2.5A UF6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: UF6
Package / Case: 6-SMD, Flat Leads

封装: -

库存7,923

TCTH021AE-LF-CT

Toshiba Semiconductor and Storage

OVER TEMP DETECTION IC IPTCO: 10

Type: Thermal
Number of Voltages Monitored: 1
Output: Push-Pull, Totem Pole
Reset: -
Reset Timeout: 214µs Typical
Voltage - Threshold: 0.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

封装: -

库存23,940

TPCP8407-LF

Toshiba Semiconductor and Storage

MOSFET N/P-CH 40V 5A/4A PS-8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4A (Ta)
Rds On (Max) @ Id, Vgs: 36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V, 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 10V, 810pF @ 10V
Power - Max: 690mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: PS-8

封装: -

库存9,984

TCR2LN12-LF-SE

Toshiba Semiconductor and Storage

LDO REG VOUT=1.2V I=200MA

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.2V
Voltage - Output (Max): -
Voltage Dropout (Max): 1.23V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): 2 µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

封装: -

库存22,380