页 90 - Toshiba Semiconductor and Storage 产品

零件编号	制造商	描述	封装	库存
TPCA8065-H,LQ(S	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 16A 8SOP-ADV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	封装: 8-PowerVDFN	库存874,044
TJ60S04M3L(T6L1,NQ	Toshiba Semiconductor and Storage	MOSFET P-CH 40V 60A DPAK-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6510pF @ 10V Vgs (Max): +10V, -20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 30A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存2,128
TK46E08N1,S1X	Toshiba Semiconductor and Storage	MOSFET N-CH 80V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 103W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 23A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	封装: TO-220-3	库存7,520
TK20A60W,S5VX	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 20A TO220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 155 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack, Isolated Tab	封装: TO-220-3 Full Pack, Isolated Tab	库存9,996
2SC4793(LBSAN,F,M)	Toshiba Semiconductor and Storage	TRANS NPN 1A 230V TO220-3 Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	封装: TO-220-3 Full Pack	库存3,712
2SC3074-O(Q)	Toshiba Semiconductor and Storage	TRANS NPN 50V 5A 2-7B1A Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 1V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PW-MOLD	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存6,736
2SC2712-BL,LF	Toshiba Semiconductor and Storage	TRANSISTOR NPN 50V 150MA S-MINI Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	封装: TO-236-3, SC-59, SOT-23-3	库存6,256
RN4982FE,LF(CB	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.1W ES6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封装: SOT-563, SOT-666	库存5,856
TA58M08S(LS2FJT,AQ	Toshiba Semiconductor and Storage	IC REG LINEAR 500MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 500mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 105°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: LSTM	封装: TO-220-3 Full Pack	库存6,624
74HC595D(BJ)	Toshiba Semiconductor and Storage	IC SHIFT REGISTER 8BIT 16SOP Logic Type: Shift Register Output Type: Tri-State Number of Elements: 1 Number of Bits per Element: 8 Function: Serial to Parallel Voltage - Supply: 2 V ~ 6 V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOP	封装: 16-SOIC (0.154", 3.90mm Width)	库存22,806
TC74LCX32FTELM	Toshiba Semiconductor and Storage	IC GATE OR 4CH 2-INP 14-TSSOP Logic Type: OR Gate Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 1.65 V ~ 3.6 V Current - Quiescent (Max): 10µA Current - Output High, Low: 24mA, 24mA Logic Level - Low: 0.8V Logic Level - High: 2V Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-TSSOP Package / Case: 14-TSSOP (0.173", 4.40mm Width)	封装: 14-TSSOP (0.173", 4.40mm Width)	库存2,100
TC7SZ86FU,LJ(CT	Toshiba Semiconductor and Storage	IC GATE XOR 1CH 2-INP USV Logic Type: XOR (Exclusive OR) Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 1.8 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: 32mA, 32mA Logic Level - Low: - Logic Level - High: - Max Propagation Delay @ V, Max CL: 5.4ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: USV Package / Case: 5-TSSOP, SC-70-5, SOT-353	封装: 5-TSSOP, SC-70-5, SOT-353	库存27,876
74HCT541D(BJ)	Toshiba Semiconductor and Storage	IC BUFFER NON-INVERT 5.5V 20SOIC Logic Type: Buffer, Non-Inverting Number of Elements: 1 Number of Bits per Element: 8 Input Type: - Output Type: Push-Pull Current - Output High, Low: 6mA, 6mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Supplier Device Package: 20-SOIC	封装: 20-SOIC (0.295", 7.50mm Width)	库存6,752
TLP716(F)	Toshiba Semiconductor and Storage	OPTOISO 5KV PUSH PULL 6DIP GW Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 10kV/µs Input Type: DC Output Type: Push-Pull, Totem Pole Current - Output / Channel: 10mA Data Rate: 15MBd Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Rise / Fall Time (Typ): 15ns, 15ns Voltage - Forward (Vf) (Typ): 1.65V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.268", 6.80mm Width) Supplier Device Package: 6-SDIP Gull Wing	封装: 6-SOIC (0.268", 6.80mm Width)	库存6,786
TLP2105(F)	Toshiba Semiconductor and Storage	OPTOISO 2.5KV 2CH PUSH PULL 8SO Number of Channels: 2 Inputs - Side 1/Side 2: 2/0 Voltage - Isolation: 2500Vrms Common Mode Transient Immunity (Min): 10kV/µs Input Type: DC Output Type: Push-Pull, Totem Pole Current - Output / Channel: 25mA Data Rate: 5Mbps Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Rise / Fall Time (Typ): 30ns, 30ns Voltage - Forward (Vf) (Typ): 1.65V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 4.5 V ~ 20 V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存52,122
TLP104(TPL,E	Toshiba Semiconductor and Storage	OPTOISO 3.75KV OPEN COLL SO6-5 Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 15kV/µs Input Type: DC Output Type: Open Collector Current - Output / Channel: 8mA Data Rate: 1Mbps Propagation Delay tpLH / tpHL (Max): 550ns, 400ns Rise / Fall Time (Typ): - Voltage - Forward (Vf) (Typ): 1.61V Current - DC Forward (If) (Max): 25mA Voltage - Supply: 4.5 V ~ 30 V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads Supplier Device Package: 6-SO, 5 Lead	封装: 6-SOIC (0.179", 4.55mm Width) 5 Leads	库存4,518
TLP251(F)	Toshiba Semiconductor and Storage	OPTOISO 2.5KV GATE DRIVER 8DIP Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 2500Vrms Common Mode Transient Immunity (Min): 5kV/µs Propagation Delay tpLH / tpHL (Max): 1µs, 1µs Pulse Width Distortion (Max): - Rise / Fall Time (Typ): - Current - Output High, Low: 100mA, 100mA Current - Peak Output: 400mA Voltage - Forward (Vf) (Typ): 1.6V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 10 V ~ 30 V Operating Temperature: -20°C ~ 85°C Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP Approvals: UR	封装: 8-DIP (0.300", 7.62mm)	库存6,318
74VHCT244AFT	Toshiba Semiconductor and Storage	IC BUF NON-INVERT 5.5V 20TSSOP Logic Type: Buffer, Non-Inverting Number of Elements: 2 Number of Bits per Element: 4 Input Type: - Output Type: 3-State Current - Output High, Low: 8mA, 8mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP	封装: 20-TSSOP (0.173", 4.40mm Width)	库存6,368
TCR2LF19,LM(CT	Toshiba Semiconductor and Storage	LDO REGULATORS VOUT: 1.9V IOUT:2 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.9V Voltage - Output (Max): - Voltage Dropout (Max): 0.62V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 2µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	封装: SC-74A, SOT-753	库存27,354
HN1B04FE-Y-LXHF	Toshiba Semiconductor and Storage	AUTO AEC-Q PNP + NPN TR VCEO:-50 Transistor Type: 1 NPN, 1 PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封装: -	库存23,994
TB67S112PG-HJ	Toshiba Semiconductor and Storage	50V/1.5A 2-IN-1 SOLENOID DRIVER. Motor Type - Stepper: Unipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge Interface: Parallel Technology: Power MOSFET Step Resolution: - Applications: General Purpose Current - Output: 1.5A Voltage - Supply: 2V ~ 5.5V Voltage - Load: 4.5V ~ 47V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-DIP	封装: -	库存555
TK3R2A08QM-S4X	Toshiba Semiconductor and Storage	UMOS10 TO-220SIS 80V 3.2MOHM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 92A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.3mA Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 46A, 10V Operating Temperature: 175°C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	封装: -	Request a Quote
TRS16N65FB-S1Q	Toshiba Semiconductor and Storage	DIODE ARR SIC SCHOTT 650V TO247 Diode Configuration: 1 Pair Common Cathode Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io) (per Diode): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 40 µA @ 650 V Operating Temperature - Junction: 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	封装: -	库存714
SSM3K361TU-LXHF	Toshiba Semiconductor and Storage	AECQ MOSFET NCH 100V 3.5A SOT323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	封装: -	库存22,416
TK33S10N1L-LXHQ	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 33A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 33A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	库存11,547
TC74LCX374FT-EL	Toshiba Semiconductor and Storage	IC D-TYPE POS TRG SNGL 20TSSOP Function: Standard Type: D-Type Output Type: Tri-State, Non-Inverted Number of Elements: 1 Number of Bits per Element: 8 Clock Frequency: 150 MHz Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF Trigger Type: Positive Edge Current - Output High, Low: 24mA, 24mA Voltage - Supply: 2V ~ 3.6V Current - Quiescent (Iq): 10 µA Input Capacitance: 7 pF Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width)	封装: -	Request a Quote
TK055U60Z1-RQ	Toshiba Semiconductor and Storage	600V DTMOS VI TOLL 55MOHM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.69mA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 270W (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 15A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: TOLL Package / Case: 8-PowerSFN	封装: -	库存10,701
TCR2EN35-LF-SE	Toshiba Semiconductor and Storage	LDO REG VOUT=3.5V IOUT=200MA Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3.5V Voltage - Output (Max): - Voltage Dropout (Max): 0.18V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 60 µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	封装: -	库存22,500
TK5A90E-S4X	Toshiba Semiconductor and Storage	PB-F POWER MOSFET TRANSISTOR TO- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 450µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 3.1Ohm @ 2.3A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	封装: -	库存141
RN1908FE-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYMMETR Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封装: -	库存24,000

TPCA8065-H,LQ(S

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 16A 8SOP-ADV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 8A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

封装: 8-PowerVDFN

库存874,044

TJ60S04M3L(T6L1,NQ

Toshiba Semiconductor and Storage

MOSFET P-CH 40V 60A DPAK-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6510pF @ 10V
Vgs (Max): +10V, -20V
FET Feature: -
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 30A, 10V
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK+
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存2,128

TK46E08N1,S1X

Toshiba Semiconductor and Storage

MOSFET N-CH 80V 80A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 40V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 103W (Tc)
Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 23A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

封装: TO-220-3

库存7,520

TK20A60W,S5VX

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 20A TO220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 300V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 155 mOhm @ 10A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack, Isolated Tab

封装: TO-220-3 Full Pack, Isolated Tab

库存9,996

2SC4793(LBSAN,F,M)

Toshiba Semiconductor and Storage

TRANS NPN 1A 230V TO220-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 230V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Power - Max: 2W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS

封装: TO-220-3 Full Pack

库存3,712

2SC3074-O(Q)

Toshiba Semiconductor and Storage

TRANS NPN 50V 5A 2-7B1A

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 1V
Power - Max: 1W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PW-MOLD

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存6,736

2SC2712-BL,LF

Toshiba Semiconductor and Storage

TRANSISTOR NPN 50V 150MA S-MINI

Transistor Type: NPN
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Power - Max: 150mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

封装: TO-236-3, SC-59, SOT-23-3

库存6,256

RN4982FE,LF(CB

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.1W ES6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封装: SOT-563, SOT-666

库存5,856

TA58M08S(LS2FJT,AQ

Toshiba Semiconductor and Storage

IC REG LINEAR 500MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 500mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 105°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: LSTM

封装: TO-220-3 Full Pack

库存6,624

74HC595D(BJ)

Toshiba Semiconductor and Storage

IC SHIFT REGISTER 8BIT 16SOP

Logic Type: Shift Register
Output Type: Tri-State
Number of Elements: 1
Number of Bits per Element: 8
Function: Serial to Parallel
Voltage - Supply: 2 V ~ 6 V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOP

封装: 16-SOIC (0.154", 3.90mm Width)

库存22,806

TC74LCX32FTELM

Toshiba Semiconductor and Storage

IC GATE OR 4CH 2-INP 14-TSSOP

Logic Type: OR Gate
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 1.65 V ~ 3.6 V
Current - Quiescent (Max): 10µA
Current - Output High, Low: 24mA, 24mA
Logic Level - Low: 0.8V
Logic Level - High: 2V
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)

封装: 14-TSSOP (0.173", 4.40mm Width)

库存2,100

TC7SZ86FU,LJ(CT

Toshiba Semiconductor and Storage

IC GATE XOR 1CH 2-INP USV

Logic Type: XOR (Exclusive OR)
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 1.8 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: 32mA, 32mA
Logic Level - Low: -
Logic Level - High: -
Max Propagation Delay @ V, Max CL: 5.4ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: USV
Package / Case: 5-TSSOP, SC-70-5, SOT-353

封装: 5-TSSOP, SC-70-5, SOT-353

库存27,876

74HCT541D(BJ)

Toshiba Semiconductor and Storage

IC BUFFER NON-INVERT 5.5V 20SOIC

Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Number of Bits per Element: 8
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 6mA, 6mA
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 20-SOIC

封装: 20-SOIC (0.295", 7.50mm Width)

库存6,752

TLP716(F)

Toshiba Semiconductor and Storage

OPTOISO 5KV PUSH PULL 6DIP GW

Number of Channels: 1
Inputs - Side 1/Side 2: 1/0
Voltage - Isolation: 5000Vrms
Common Mode Transient Immunity (Min): 10kV/µs
Input Type: DC
Output Type: Push-Pull, Totem Pole
Current - Output / Channel: 10mA
Data Rate: 15MBd
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Rise / Fall Time (Typ): 15ns, 15ns
Voltage - Forward (Vf) (Typ): 1.65V
Current - DC Forward (If) (Max): 20mA
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Supplier Device Package: 6-SDIP Gull Wing

封装: 6-SOIC (0.268", 6.80mm Width)

库存6,786

TLP2105(F)

Toshiba Semiconductor and Storage

OPTOISO 2.5KV 2CH PUSH PULL 8SO

Number of Channels: 2
Inputs - Side 1/Side 2: 2/0
Voltage - Isolation: 2500Vrms
Common Mode Transient Immunity (Min): 10kV/µs
Input Type: DC
Output Type: Push-Pull, Totem Pole
Current - Output / Channel: 25mA
Data Rate: 5Mbps
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Rise / Fall Time (Typ): 30ns, 30ns
Voltage - Forward (Vf) (Typ): 1.65V
Current - DC Forward (If) (Max): 20mA
Voltage - Supply: 4.5 V ~ 20 V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存52,122

TLP104(TPL,E

Toshiba Semiconductor and Storage

OPTOISO 3.75KV OPEN COLL SO6-5

Number of Channels: 1
Inputs - Side 1/Side 2: 1/0
Voltage - Isolation: 3750Vrms
Common Mode Transient Immunity (Min): 15kV/µs
Input Type: DC
Output Type: Open Collector
Current - Output / Channel: 8mA
Data Rate: 1Mbps
Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
Rise / Fall Time (Typ): -
Voltage - Forward (Vf) (Typ): 1.61V
Current - DC Forward (If) (Max): 25mA
Voltage - Supply: 4.5 V ~ 30 V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
Supplier Device Package: 6-SO, 5 Lead

封装: 6-SOIC (0.179", 4.55mm Width) 5 Leads

库存4,518

TLP251(F)

Toshiba Semiconductor and Storage

OPTOISO 2.5KV GATE DRIVER 8DIP

Technology: Optical Coupling
Number of Channels: 1
Voltage - Isolation: 2500Vrms
Common Mode Transient Immunity (Min): 5kV/µs
Propagation Delay tpLH / tpHL (Max): 1µs, 1µs
Pulse Width Distortion (Max): -
Rise / Fall Time (Typ): -
Current - Output High, Low: 100mA, 100mA
Current - Peak Output: 400mA
Voltage - Forward (Vf) (Typ): 1.6V
Current - DC Forward (If) (Max): 20mA
Voltage - Supply: 10 V ~ 30 V
Operating Temperature: -20°C ~ 85°C
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP
Approvals: UR

封装: 8-DIP (0.300", 7.62mm)

库存6,318

74VHCT244AFT

Toshiba Semiconductor and Storage

IC BUF NON-INVERT 5.5V 20TSSOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Number of Bits per Element: 4
Input Type: -
Output Type: 3-State
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP

封装: 20-TSSOP (0.173", 4.40mm Width)

库存6,368

TCR2LF19,LM(CT

Toshiba Semiconductor and Storage

LDO REGULATORS VOUT: 1.9V IOUT:2

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.9V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.62V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): 2µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

封装: SC-74A, SOT-753

库存27,354

HN1B04FE-Y-LXHF

Toshiba Semiconductor and Storage

AUTO AEC-Q PNP + NPN TR VCEO:-50

Transistor Type: 1 NPN, 1 PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封装: -

库存23,994

TB67S112PG-HJ

Toshiba Semiconductor and Storage

50V/1.5A 2-IN-1 SOLENOID DRIVER.

Motor Type - Stepper: Unipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge
Interface: Parallel
Technology: Power MOSFET
Step Resolution: -
Applications: General Purpose
Current - Output: 1.5A
Voltage - Supply: 2V ~ 5.5V
Voltage - Load: 4.5V ~ 47V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-DIP

封装: -

库存555

TK3R2A08QM-S4X

Toshiba Semiconductor and Storage

UMOS10 TO-220SIS 80V 3.2MOHM

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 46A, 10V
Operating Temperature: 175°C
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

封装: -

Request a Quote

TRS16N65FB-S1Q

Toshiba Semiconductor and Storage

DIODE ARR SIC SCHOTT 650V TO247

Diode Configuration: 1 Pair Common Cathode
Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io) (per Diode): 8A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Operating Temperature - Junction: 175°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247

封装: -

库存714

SSM3K361TU-LXHF

Toshiba Semiconductor and Storage

AECQ MOSFET NCH 100V 3.5A SOT323

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: UFM
Package / Case: 3-SMD, Flat Leads

封装: -

库存22,416

TK33S10N1L-LXHQ

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 33A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: DPAK+
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

库存11,547

TC74LCX374FT-EL

Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 20TSSOP

Function: Standard
Type: D-Type
Output Type: Tri-State, Non-Inverted
Number of Elements: 1
Number of Bits per Element: 8
Clock Frequency: 150 MHz
Max Propagation Delay @ V, Max CL: 8.5ns @ 3.3V, 50pF
Trigger Type: Positive Edge
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 2V ~ 3.6V
Current - Quiescent (Iq): 10 µA
Input Capacitance: 7 pF
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)

封装: -

Request a Quote

TK055U60Z1-RQ

Toshiba Semiconductor and Storage

600V DTMOS VI TOLL 55MOHM

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1.69mA
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 270W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: TOLL
Package / Case: 8-PowerSFN

封装: -

库存10,701

TCR2EN35-LF-SE

Toshiba Semiconductor and Storage

LDO REG VOUT=3.5V IOUT=200MA

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3.5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.18V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): 60 µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

封装: -

库存22,500

TK5A90E-S4X

Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 450µA
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 3.1Ohm @ 2.3A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

封装: -

库存141

RN1908FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封装: -

库存24,000