Toshiba Semiconductor and Storage 产品

GT10G131(TE12L,Q)

Toshiba Semiconductor and Storage

IGBT 400V 1W 8-SOIC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 400V
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 4V, 200A
• Power - Max: 1W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 3.1µs/2µs
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.173", 4.40mm Width)
• Supplier Device Package: 8-SOP (5.5x6.0)

封装: 8-SOIC (0.173", 4.40mm Width)

TPC8032-H(TE12LQM)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 15A SOP8 2-6J1B

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2846pF @ 10V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 7.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP (5.5x6.0)
• Package / Case: 8-SOIC (0.173", 4.40mm Width)

封装: 8-SOIC (0.173", 4.40mm Width)

TPCA8062-H,LQ(CM

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 28A 8SOP-ADV

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 300µA
• Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
• Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 14A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

封装: 8-PowerVDFN

TK17A80W,S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 800V 17A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 850µA
• Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 300V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 45W (Tc)
• Rds On (Max) @ Id, Vgs: 290 mOhm @ 8.5A, 10V
• Operating Temperature: 150°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

SSM3K329R,LF

Toshiba Semiconductor and Storage

MOSFET N CH 30V 3.5A 2-3Z1A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4V
• Input Capacitance (Ciss) (Max) @ Vds: 123pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 126 mOhm @ 1A, 4V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23F
• Package / Case: SOT-23-3 Flat Leads

封装: SOT-23-3 Flat Leads

2SA1680,F(J

Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
• Power - Max: 900mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

封装: TO-226-3, TO-92-3 Long Body

RN2964(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W US6

• Transistor Type: 2 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

封装: 6-TSSOP, SC-88, SOT-363

RN1905,LF

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

封装: 6-TSSOP, SC-88, SOT-363

CRY68(TE85L,Q,M)

Toshiba Semiconductor and Storage

DIODE ZENER 6.8V 700MW SFLAT

• Voltage - Zener (Nom) (Vz): 6.8V
• Tolerance: ±10%
• Power - Max: 700mW
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: S-FLAT (1.6x3.5)

封装: SOD-123F

TB62212FTAG,C8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 48QFN

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (8)
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 2A
• Voltage - Supply: 4.5 V ~ 5.5 V
• Voltage - Load: 10 V ~ 38 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: 48-QFN (7x7)

封装: 48-VFQFN Exposed Pad

TL1L3-WH1,L

Toshiba Semiconductor and Storage

LED LETERAS NEU WHITE 4000K 2SMD

• Color: White, Neutral
• CCT (K): 4000K
• Flux @ 85°C, Current - Test: -
• Flux @ 25°C, Current - Test: 129 lm (Typ)
• Current - Test: 350mA
• Voltage - Forward (Vf) (Typ): 2.85V
• Lumens/Watt @ Current - Test: 129 lm/W
• CRI (Color Rendering Index): 80
• Current - Max: 1A
• Viewing Angle: 100°
• Mounting Type: Surface Mount
• Package / Case: 1414 (3535 Metric)
• Supplier Device Package: 3535
• Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
• Height - Seated (Max): 0.099" (2.52mm)

封装: 1414 (3535 Metric)

TLP290(TP,SE

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 50% @ 5mA
• Current Transfer Ratio (Max): 600% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: AC, DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: 4-SOIC (0.179", 4.55mm)
• Supplier Device Package: 4-SO

封装: 4-SOIC (0.179", 4.55mm)

TLP117(TPR,F)

Toshiba Semiconductor and Storage

OPTOISO 3.75KV PSH PULL 6MFSOP-5

• Number of Channels: 1
• Inputs - Side 1/Side 2: 1/0
• Voltage - Isolation: 3750Vrms
• Common Mode Transient Immunity (Min): 10kV/µs
• Input Type: DC
• Output Type: Push-Pull, Totem Pole
• Current - Output / Channel: 10mA
• Data Rate: 50MBd
• Propagation Delay tpLH / tpHL (Max): 20ns, 20ns
• Rise / Fall Time (Typ): 3ns, 3ns
• Voltage - Forward (Vf) (Typ): 1.6V
• Current - DC Forward (If) (Max): 25mA
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 6-SOIC (0.173", 4.40mm Width) 5 Leads
• Supplier Device Package: 6-MFSOP, 5 Lead

封装: 6-SOIC (0.173", 4.40mm Width) 5 Leads

TLP754(F)

Toshiba Semiconductor and Storage

OPTOISO 5KV OPEN COLLECTOR 8DIP

• Number of Channels: 1
• Inputs - Side 1/Side 2: 1/0
• Voltage - Isolation: 5000Vrms
• Common Mode Transient Immunity (Min): 20kV/µs
• Input Type: DC
• Output Type: Open Collector
• Current - Output / Channel: 15mA
• Data Rate: 1Mbps
• Propagation Delay tpLH / tpHL (Max): 550ns, 400ns
• Rise / Fall Time (Typ): -
• Voltage - Forward (Vf) (Typ): 1.55V
• Current - DC Forward (If) (Max): 20mA
• Voltage - Supply: 4.5 V ~ 30 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP

封装: 8-DIP (0.300", 7.62mm)

TB67S141HG

Toshiba Semiconductor and Storage

2 PHASE UNIPOLAR STEPPING MOTOR

• Motor Type - Stepper: Unipolar
• Motor Type - AC, DC: -
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (2)
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: 1, 1/2, 1/4
• Applications: General Purpose
• Current - Output: 3A
• Voltage - Supply: 4.75 V ~ 5.25 V
• Voltage - Load: 10 V ~ 40 V
• Operating Temperature: -20°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: 25-SIP Formed Leads
• Supplier Device Package: 25-HZIP

封装: 25-SIP Formed Leads

TC4538BP(N,F)

Toshiba Semiconductor and Storage

IC MULTIVIBRATR 100NS 16DIP

• Logic Type: Monostable
• Independent Circuits: 2
• Schmitt Trigger Input: No
• Propagation Delay: 100ns
• Current - Output High, Low: 9mA, 15mA
• Voltage - Supply: 3V ~ 18V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: 16-DIP (0.300", 7.62mm)
• Supplier Device Package: 16-DIP

封装: 16-DIP (0.300", 7.62mm)

74VHC126FT

Toshiba Semiconductor and Storage

IC BUF NON-INVERT 5.5V 14TSSOP

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 4
• Number of Bits per Element: 1
• Input Type: -
• Output Type: 3-State
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 14-TSSOP

封装: 14-TSSOP (0.173", 4.40mm Width)

TMP86PH06UG(C,JZ)

Toshiba Semiconductor and Storage

IC MCU 8BIT 16KB OTP 44LQFP

• Core Processor: -
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: EBI/EMI
• Peripherals: -
• Number of I/O: 8
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: OTP
• EEPROM Size: -
• RAM Size: 512 x 8
• Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
• Data Converters: -
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 44-LQFP
• Supplier Device Package: 44-LQFP (10x10)

封装: 44-LQFP

TB9051FTG,EL

Toshiba Semiconductor and Storage

MOTOR CONTROLLER SINGLE CHANNEL

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Pre-Driver - Half Bridge (2)
• Interface: PWM
• Technology: Bi-CMOS
• Step Resolution: -
• Applications: Automotive
• Current - Output: 6A
• Voltage - Supply: 4.5V ~ 5.5V
• Voltage - Load: -
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 28-PowerQFN
• Supplier Device Package: 28-QFN (6x6)

封装: 28-PowerQFN

74VHC9126FT

Toshiba Semiconductor and Storage

X34 PB-F UNIVERSAL SCHMITT BUFFE

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 5
• Input Type: Schmitt Trigger
• Output Type: 3-State
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2V ~ 5.5V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 14-TSSOPB

封装: 14-TSSOP (0.173", 4.40mm Width)

CRG05-TE85L-Q-M

Toshiba Semiconductor and Storage

DIODE GEN PURP 800V 1A S-FLAT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 800 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: S-FLAT (1.6x3.5)
• Operating Temperature - Junction: -40°C ~ 150°C

封装: -

TCK128AG-LF

Toshiba Semiconductor and Storage

IC PWR SWITCH

• Switch Type: -
• Number of Outputs: -
• Ratio - Input:Output: -
• Output Configuration: -
• Output Type: -
• Interface: -
• Voltage - Load: -
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): -
• Input Type: -
• Features: -
• Fault Protection: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

封装: -

Request a Quote

RN49A1-TE85L-F

Toshiba Semiconductor and Storage

PNP + NPN BRT Q1BSR=2.2KOHM Q1BE

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2kOhms, 22kOhms
• Resistor - Emitter Base (R2) (Ohms): 47kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz, 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

封装: -

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2SA1971-TE12L-F

Toshiba Semiconductor and Storage

PB-FREE POWER TRANSISTOR PW-MINI

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 500 mA
• Voltage - Collector Emitter Breakdown (Max): 400 V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
• Power - Max: 500 mW
• Frequency - Transition: 35MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: PW-MINI

封装: -

TCR2LN285-LF-SE

Toshiba Semiconductor and Storage

LDO REG VOUT=2.85V I=200MA

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 2.85V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.36V @ 150mA
• Current - Output: 200mA
• Current - Quiescent (Iq): 2 µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-XFDFN Exposed Pad
• Supplier Device Package: 4-SDFN (0.8x0.8)

封装: -

2SC6026MFV-Y-L3F

Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A VESM

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 150 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
• Power - Max: 150 mW
• Frequency - Transition: 60MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VESM

封装: -

TCR3RM28A-LF

Toshiba Semiconductor and Storage

IC REG LINEAR 2.8V 300MA 4DFNC

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 2.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.13V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: 100dB (1kHz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XDFN Exposed Pad
• Supplier Device Package: 4-DFNC (1x1)

封装: -

TCR3UF20A-LM-CT

Toshiba Semiconductor and Storage

IC REG LINEAR 2V 300MA SMV

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 2V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.412V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): 680 nA
• Current - Supply (Max): -
• PSRR: 70dB (1kHz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

封装: -

TK430A60F-S4X-S

Toshiba Semiconductor and Storage

MOSFET N-CH

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1.75mA
• Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 300 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 45W (Tc)
• Rds On (Max) @ Id, Vgs: 430mOhm @ 6.5A, 10V
• Operating Temperature: 150°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

封装: -

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RN1106MFV-L3XHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 4.7 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 150 mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VESM

封装: -