页 64 - Toshiba Semiconductor and Storage 产品

零件编号	制造商	描述	封装	库存
2SK2719(F)	Toshiba Semiconductor and Storage	MOSFET N-CH 900V 3A TO-3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P(N) Package / Case: TO-3P-3, SC-65-3	封装: TO-3P-3, SC-65-3	库存5,696
TK12E60W,S1VX	Toshiba Semiconductor and Storage	MOSFET N CH 600V 11.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 600µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 300V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 5.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	封装: TO-220-3	库存3,488
TK8A55DA(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 7.5A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1.07 Ohm @ 3.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	封装: TO-220-3 Full Pack	库存5,376
SSM3K7002BS,LF	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 200MA SMD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: S-Mini Package / Case: TO-236-3, SC-59, SOT-23-3	封装: TO-236-3, SC-59, SOT-23-3	库存36,000
TPH4R008NH,L1Q	Toshiba Semiconductor and Storage	MOSFET N CH 80V 60A SOP ADV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	封装: 8-PowerVDFN	库存6,048
TPN1600ANH,L1Q	Toshiba Semiconductor and Storage	MOSFET N CH 100V 17A 8TSON-ADV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 8.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	封装: 8-PowerVDFN	库存6,608
2SA949-Y(T6ONK1,FM	Toshiba Semiconductor and Storage	TRANS PNP 50MA 150V TO226-3 Transistor Type: PNP Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	封装: TO-226-3, TO-92-3 Long Body	库存2,192
TA58M05S,Q(J	Toshiba Semiconductor and Storage	IC REG LINEAR 500MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 500mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 105°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: LSTM	封装: TO-220-3 Full Pack	库存3,840
TCR2LE30,LM(CT	Toshiba Semiconductor and Storage	IC REG LINEAR 3V 200MA ESV Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3V Voltage - Output (Max): - Voltage Dropout (Max): 0.3V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 2µA PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	封装: SOT-553	库存63,564
TB67S209FTG(O,EL)	Toshiba Semiconductor and Storage	IC STEP MOTOR DRVR PAR 48WQFN Motor Type - Stepper: Bipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: Power MOSFET Step Resolution: 1 ~ 1/32 Applications: General Purpose Current - Output: 3A Voltage - Supply: 4.75 V ~ 5.25 V Voltage - Load: 10 V ~ 47 V Operating Temperature: -20°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 48-WFQFN Exposed Pad Supplier Device Package: 48-WQFN (7x7)	封装: 48-WFQFN Exposed Pad	库存6,080
TB6608FNG,C8,EL	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 20SSOP Motor Type - Stepper: Bipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: Power MOSFET Step Resolution: 1, 1/2, 1/4, 1/8 Applications: General Purpose Current - Output: 600mA Voltage - Supply: 2.7 V ~ 5.5 V Voltage - Load: 2.5 V ~ 13.5 V Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-LSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-SSOP	封装: 20-LSSOP (0.173", 4.40mm Width)	库存3,168
74HC126D(BJ)	Toshiba Semiconductor and Storage	IC BUFFER DVR TRI-ST QD 14SOP Logic Type: Buffer, Non-Inverting Number of Elements: 4 Number of Bits per Element: 1 Input Type: - Output Type: Push-Pull Current - Output High, Low: 7.8mA, 7.8mA Voltage - Supply: 2 V ~ 6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOP	封装: 14-SOIC (0.154", 3.90mm Width)	库存22,452
TMP86FS49BFG(CZHZ)	Toshiba Semiconductor and Storage	IC MCU 8BIT 60KB FLASH 64QFP Core Processor: 870/C Core Size: 8-Bit Speed: 16MHz Connectivity: I2C, SIO, UART/USART Peripherals: LED, PWM, WDT Number of I/O: 56 Program Memory Size: 60KB (60K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 2K x 8 Voltage - Supply (Vcc/Vdd): 2.7 V ~ 5.5 V Data Converters: A/D 16x10b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 64-BQFP Supplier Device Package: 64-QFP (14x14)	封装: 64-BQFP	库存5,424
TLBD1100B(T11)	Toshiba Semiconductor and Storage	LED BLUE 2PLCC SMD Color: Blue Configuration: - Lens Color: - Lens Transparency: - Millicandela Rating: 70mcd Lens Style/Size: Round with Flat Top, 2.40mm Voltage - Forward (Vf) (Typ): 3.3V Current - Test: 20mA Viewing Angle: - Mounting Type: Surface Mount Wavelength - Dominant: 470nm Wavelength - Peak: 468nm Features: - Package / Case: 2-PLCC Supplier Device Package: SMD Size / Dimension: 3.20mm L x 2.80mm W Height (Max): 2.10mm	封装: 2-PLCC	库存8,910
DF3A5.6CT(TPL3)	Toshiba Semiconductor and Storage	TVS DIODE 2.5VWM CST3 Type: Zener Unidirectional Channels: 2 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 2.5V Voltage - Breakdown (Min): 5.3V Voltage - Clamping (Max) @ Ipp: - Current - Peak Pulse (10/1000µs): - Power - Peak Pulse: - Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 65pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	封装: SC-101, SOT-883	库存3,600,000
TC35679FSG-002	Toshiba Semiconductor and Storage	V4.2 BLUETOOTH SMART IC IMPLEMEN Type: TxRx + MCU RF Family/Standard: Bluetooth Protocol: Bluetooth v4.2 Modulation: - Frequency: 2.4GHz Data Rate (Max): - Power - Output: 0dBm Sensitivity: -93dBm Memory Size: - Serial Interfaces: I2C, SPI, UART GPIO: - Voltage - Supply: 1.8 V ~ 3.6 V Current - Receiving: 3.3mA Current - Transmitting: 3.3mA Operating Temperature: -40°C ~ 85°C Package / Case: 60-VFQFN Exposed Pad	封装: 60-VFQFN Exposed Pad	库存3,508
TLP293-4(LA-TR,E	Toshiba Semiconductor and Storage	OPTOISOLATOR 3.75KV TRANS SO16 Number of Channels: 4 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 500µA Current Transfer Ratio (Max): 600% @ 500µA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.179", 4.55mm Width) Supplier Device Package: 16-SO	封装: 16-SOIC (0.179", 4.55mm Width)	库存3,294
TLP185(GB-TPL,SE	Toshiba Semiconductor and Storage	OPTOISO 3.75KV TRANS 6-SO 4 LEAD Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Package / Case: 6-SMD (4 Leads), Gull Wing Supplier Device Package: 6-SO, 4 Lead	封装: 6-SMD (4 Leads), Gull Wing	库存8,316
TC7WU04FU,LF	Toshiba Semiconductor and Storage	IC INVERTER 3CH 3-INP SM8 Logic Type: Inverter Number of Circuits: 3 Number of Inputs: 3 Features: - Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Max): 1µA Current - Output High, Low: 5.2mA, 5.2mA Logic Level - Low: 0.3 V ~ 1.2 V Logic Level - High: 1.7 V ~ 4.8 V Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: SM8 Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)	封装: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)	库存5,040
TCR2LF21,LM(CT	Toshiba Semiconductor and Storage	200MA LDO VOUT2.1V DROPOUT220MV Output Configuration: - Output Type: - Number of Regulators: - Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: - Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,120
TK370A60F-S4X-S	Toshiba Semiconductor and Storage	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2.04mA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 370mOhm @ 7.5A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	封装: -	Request a Quote
SSM3J374R-LXHF	Toshiba Semiconductor and Storage	SMOS P-CH VDSS:-30V VGSS:-20/+10 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V Vgs (Max): +10V, -20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	封装: -	库存26,097
2SA2070-TE12L-F	Toshiba Semiconductor and Storage	TRANS PNP 50V 1A PW-MINI Transistor Type: PNP Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 300mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Power - Max: 1 W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI	封装: -	Request a Quote
RN2425-TE85L-F	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.8A SMINI Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 200 mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	封装: -	库存25,740
TCR1HF18B-LM-CT	Toshiba Semiconductor and Storage	40V 150MA LDO LOW IQ 1UA SOT-25 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 36V Voltage - Output (Min/Fixed): 1.8V Voltage - Output (Max): - Voltage Dropout (Max): 1.06V @ 150mA Current - Output: 150mA Current - Quiescent (Iq): 1.6 µA Current - Supply (Max): - PSRR: 60dB (1kHz) Control Features: Current Limit, Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	封装: -	库存8,835
TC7SH86FE-LM	Toshiba Semiconductor and Storage	IC GATE XOR 1CH 2-INP ESV Logic Type: XOR (Exclusive OR) Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 2V ~ 5.5V Current - Quiescent (Max): 2 µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.5V Logic Level - High: 1.5V Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: ESV Package / Case: SOT-553	封装: -	库存165
RN1903FE-LF-CT	Toshiba Semiconductor and Storage	NPNX2 BRT Q1BSR22KOHM Q1BER22KOH Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封装: -	库存9,000
TK25S06N1L-LQ	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 25A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 18.5mOhm @ 12.5A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	库存4,332
TPCA8109-TE12L1-V	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 24A 8SOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 10 V Vgs (Max): +20V, -25V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	封装: -	Request a Quote
TK2P90E-RQ	Toshiba Semiconductor and Storage	PB-F POWER MOSFET TRANSISTOR DPA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 5.9Ohm @ 1A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	库存5,934

2SK2719(F)

Toshiba Semiconductor and Storage

MOSFET N-CH 900V 3A TO-3PN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P(N)
Package / Case: TO-3P-3, SC-65-3

封装: TO-3P-3, SC-65-3

库存5,696

TK12E60W,S1VX

Toshiba Semiconductor and Storage

MOSFET N CH 600V 11.5A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 300V
Vgs (Max): ±30V
FET Feature: Super Junction
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 300 mOhm @ 5.8A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

封装: TO-220-3

库存3,488

TK8A55DA(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 550V 7.5A TO-220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 550V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 1.07 Ohm @ 3.8A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

库存5,376

SSM3K7002BS,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 200MA SMD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: S-Mini
Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

库存36,000

TPH4R008NH,L1Q

Toshiba Semiconductor and Storage

MOSFET N CH 80V 60A SOP ADV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 40V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

封装: 8-PowerVDFN

库存6,048

TPN1600ANH,L1Q

Toshiba Semiconductor and Storage

MOSFET N CH 100V 17A 8TSON-ADV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 700mW (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 16 mOhm @ 8.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Package / Case: 8-PowerVDFN

封装: 8-PowerVDFN

库存6,608

2SA949-Y(T6ONK1,FM

Toshiba Semiconductor and Storage

TRANS PNP 50MA 150V TO226-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Power - Max: 800mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

封装: TO-226-3, TO-92-3 Long Body

库存2,192

TA58M05S,Q(J

Toshiba Semiconductor and Storage

IC REG LINEAR 500MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 500mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 105°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: LSTM

封装: TO-220-3 Full Pack

库存3,840

TCR2LE30,LM(CT

Toshiba Semiconductor and Storage

IC REG LINEAR 3V 200MA ESV

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.3V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 2µA
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

封装: SOT-553

库存63,564

TB67S209FTG(O,EL)

Toshiba Semiconductor and Storage

IC STEP MOTOR DRVR PAR 48WQFN

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: Parallel
Technology: Power MOSFET
Step Resolution: 1 ~ 1/32
Applications: General Purpose
Current - Output: 3A
Voltage - Supply: 4.75 V ~ 5.25 V
Voltage - Load: 10 V ~ 47 V
Operating Temperature: -20°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-WFQFN Exposed Pad
Supplier Device Package: 48-WQFN (7x7)

封装: 48-WFQFN Exposed Pad

库存6,080

TB6608FNG,C8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 20SSOP

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: Parallel
Technology: Power MOSFET
Step Resolution: 1, 1/2, 1/4, 1/8
Applications: General Purpose
Current - Output: 600mA
Voltage - Supply: 2.7 V ~ 5.5 V
Voltage - Load: 2.5 V ~ 13.5 V
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-LSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-SSOP

封装: 20-LSSOP (0.173", 4.40mm Width)

库存3,168

74HC126D(BJ)

Toshiba Semiconductor and Storage

IC BUFFER DVR TRI-ST QD 14SOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 4
Number of Bits per Element: 1
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 7.8mA, 7.8mA
Voltage - Supply: 2 V ~ 6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOP

封装: 14-SOIC (0.154", 3.90mm Width)

库存22,452

TMP86FS49BFG(CZHZ)

Toshiba Semiconductor and Storage

IC MCU 8BIT 60KB FLASH 64QFP

Core Processor: 870/C
Core Size: 8-Bit
Speed: 16MHz
Connectivity: I2C, SIO, UART/USART
Peripherals: LED, PWM, WDT
Number of I/O: 56
Program Memory Size: 60KB (60K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 2K x 8
Voltage - Supply (Vcc/Vdd): 2.7 V ~ 5.5 V
Data Converters: A/D 16x10b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 64-BQFP
Supplier Device Package: 64-QFP (14x14)

封装: 64-BQFP

库存5,424

TLBD1100B(T11)

Toshiba Semiconductor and Storage

LED BLUE 2PLCC SMD

Color: Blue
Configuration: -
Lens Color: -
Lens Transparency: -
Millicandela Rating: 70mcd
Lens Style/Size: Round with Flat Top, 2.40mm
Voltage - Forward (Vf) (Typ): 3.3V
Current - Test: 20mA
Viewing Angle: -
Mounting Type: Surface Mount
Wavelength - Dominant: 470nm
Wavelength - Peak: 468nm
Features: -
Package / Case: 2-PLCC
Supplier Device Package: SMD
Size / Dimension: 3.20mm L x 2.80mm W
Height (Max): 2.10mm

封装: 2-PLCC

库存8,910

DF3A5.6CT(TPL3)

Toshiba Semiconductor and Storage

TVS DIODE 2.5VWM CST3

Type: Zener
Unidirectional Channels: 2
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 2.5V
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: -
Current - Peak Pulse (10/1000µs): -
Power - Peak Pulse: -
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 65pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3

封装: SC-101, SOT-883

库存3,600,000

TC35679FSG-002

Toshiba Semiconductor and Storage

V4.2 BLUETOOTH SMART IC IMPLEMEN

Type: TxRx + MCU
RF Family/Standard: Bluetooth
Protocol: Bluetooth v4.2
Modulation: -
Frequency: 2.4GHz
Data Rate (Max): -
Power - Output: 0dBm
Sensitivity: -93dBm
Memory Size: -
Serial Interfaces: I2C, SPI, UART
GPIO: -
Voltage - Supply: 1.8 V ~ 3.6 V
Current - Receiving: 3.3mA
Current - Transmitting: 3.3mA
Operating Temperature: -40°C ~ 85°C
Package / Case: 60-VFQFN Exposed Pad

封装: 60-VFQFN Exposed Pad

库存3,508

TLP293-4(LA-TR,E

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

Number of Channels: 4
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 500µA
Current Transfer Ratio (Max): 600% @ 500µA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Supplier Device Package: 16-SO

封装: 16-SOIC (0.179", 4.55mm Width)

库存3,294

TLP185(GB-TPL,SE

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

Number of Channels: 1
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Current Transfer Ratio (Max): 600% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 6-SMD (4 Leads), Gull Wing
Supplier Device Package: 6-SO, 4 Lead

封装: 6-SMD (4 Leads), Gull Wing

库存8,316

TC7WU04FU,LF

Toshiba Semiconductor and Storage

IC INVERTER 3CH 3-INP SM8

Logic Type: Inverter
Number of Circuits: 3
Number of Inputs: 3
Features: -
Voltage - Supply: 2 V ~ 6 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 5.2mA, 5.2mA
Logic Level - Low: 0.3 V ~ 1.2 V
Logic Level - High: 1.7 V ~ 4.8 V
Max Propagation Delay @ V, Max CL: 10ns @ 6V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: SM8
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

封装: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

库存5,040

TCR2LF21,LM(CT

Toshiba Semiconductor and Storage

200MA LDO VOUT2.1V DROPOUT220MV

Output Configuration: -
Output Type: -
Number of Regulators: -
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: -
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,120

TK370A60F-S4X-S

Toshiba Semiconductor and Storage

MOSFET N-CH

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 2.04mA
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 370mOhm @ 7.5A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

封装: -

Request a Quote

SSM3J374R-LXHF

Toshiba Semiconductor and Storage

SMOS P-CH VDSS:-30V VGSS:-20/+10

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 15 V
Vgs (Max): +10V, -20V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 71mOhm @ 3A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: SOT-23F
Package / Case: SOT-23-3 Flat Leads

封装: -

库存26,097

2SA2070-TE12L-F

Toshiba Semiconductor and Storage

TRANS PNP 50V 1A PW-MINI

Transistor Type: PNP
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PW-MINI

封装: -

Request a Quote

RN2425-TE85L-F

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.8A SMINI

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

封装: -

库存25,740

TCR1HF18B-LM-CT

Toshiba Semiconductor and Storage

40V 150MA LDO LOW IQ 1UA SOT-25

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 36V
Voltage - Output (Min/Fixed): 1.8V
Voltage - Output (Max): -
Voltage Dropout (Max): 1.06V @ 150mA
Current - Output: 150mA
Current - Quiescent (Iq): 1.6 µA
Current - Supply (Max): -
PSRR: 60dB (1kHz)
Control Features: Current Limit, Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

封装: -

库存8,835

TC7SH86FE-LM

Toshiba Semiconductor and Storage

IC GATE XOR 1CH 2-INP ESV

Logic Type: XOR (Exclusive OR)
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Max): 2 µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.5V
Logic Level - High: 1.5V
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: ESV
Package / Case: SOT-553

封装: -

库存165

RN1903FE-LF-CT

Toshiba Semiconductor and Storage

NPNX2 BRT Q1BSR22KOHM Q1BER22KOH

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封装: -

库存9,000

TK25S06N1L-LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 25A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 12.5A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: DPAK+
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

库存4,332

TPCA8109-TE12L1-V

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 24A 8SOP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 10 V
Vgs (Max): +20V, -25V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

封装: -

Request a Quote

TK2P90E-RQ

Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DPA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 5.9Ohm @ 1A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

库存5,934