页 61 - Toshiba Semiconductor and Storage 产品

零件编号	制造商	描述	封装	库存
GT60N321(Q)	Toshiba Semiconductor and Storage	IGBT 1000V 60A 170W TO3P LH IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A Power - Max: 170W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 330ns/700ns Test Condition: - Reverse Recovery Time (trr): 2.5µs Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PL Supplier Device Package: TO-3P(LH)	封装: TO-3PL	库存22,140
TK18A50D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 18A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	封装: TO-220-3 Full Pack	库存4,736
TK16A60W,S4X	Toshiba Semiconductor and Storage	MOSFET N CH 600V 15.8A DTMOSIV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15.8A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 790µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.9A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3 Full Pack	封装: TO-220-3 Full Pack	库存6,240
TJ50S06M3L(T6L1,NQ	Toshiba Semiconductor and Storage	MOSFET P-CH 60V 50A DPAK-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6290pF @ 10V Vgs (Max): +10V, -20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 25A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存2,112
TK14E65W5,S1X	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 13.7A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 690µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	封装: TO-220-3	库存7,548
SSM6L16FETE85LF	Toshiba Semiconductor and Storage	MOSFET N/P-CH 20V 0.18A/0.1A ES6 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 0.1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V Power - Max: 150mW Operating Temperature: 150°C (TA) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	封装: SOT-563, SOT-666	库存3,408
2SA949-Y,ONK-1F(J	Toshiba Semiconductor and Storage	TRANS PNP 50MA 150V TO226-3 Transistor Type: PNP Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	封装: TO-226-3, TO-92-3 Long Body	库存2,240
2SA1020-Y(T6CN,A,F	Toshiba Semiconductor and Storage	TRANS PNP 2A 50V TO226-3 Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	封装: TO-226-3, TO-92-3 Long Body	库存2,768
RN1425TE85LF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 200MW SMINI Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 470 Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 300MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	封装: TO-236-3, SC-59, SOT-23-3	库存6,480
2SC5088-O(TE85L,F)	Toshiba Semiconductor and Storage	TRANS RF NPN 12V 500MHZ USQ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Gain: 18dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: USQ	封装: SC-82A, SOT-343	库存5,760
1SV323,H3F	Toshiba Semiconductor and Storage	DIODE VARACTOR 10V ESC Capacitance @ Vr, F: 7.1pF @ 4V, 1MHz Capacitance Ratio: 4.3 Capacitance Ratio Condition: C1/C4 Voltage - Peak Reverse (Max): 10V Diode Type: Single Q @ Vr, F: - Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: ESC	封装: SC-79, SOD-523	库存2,896
CRF03(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 600V 700MA SFLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 2V @ 700mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C	封装: SOD-123F	库存720,000
CTS520,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 200MA CST2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 30V Capacitance @ Vr, F: 16pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: CST2 Operating Temperature - Junction: 125°C (Max)	封装: SOD-882	库存187,992
TA78L005AP,SDENF(J	Toshiba Semiconductor and Storage	IC REG LINEAR 150MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 150mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -30°C ~ 85°C Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	封装: TO-226-3, TO-92-3 Long Body	库存5,424
TB67B008FNG,EL	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 24SSOP Motor Type - Stepper: - Motor Type - AC, DC: Brushless DC (BLDC) Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (3) Interface: PWM Technology: Power MOSFET Step Resolution: - Applications: General Purpose Current - Output: 3A Voltage - Supply: 5.5 V ~ 22 V Voltage - Load: 5.5 V ~ 22 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-LSSOP (0.220", 5.60mm Width) Supplier Device Package: 24-SSOP	封装: 24-LSSOP (0.220", 5.60mm Width)	库存2,432
TC74VHC595F(EL,K,F	Toshiba Semiconductor and Storage	IC 8-BIT SHIFT REGISTER 16SOP Logic Type: Shift Register Output Type: Tri-State Number of Elements: 1 Number of Bits per Element: 8 Function: Serial to Parallel Voltage - Supply: 2 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.209", 5.30mm Width) Supplier Device Package: 16-SOP	封装: 16-SOIC (0.209", 5.30mm Width)	库存16,494
TC74VHC00FTELM	Toshiba Semiconductor and Storage	IC GATE NAND 4CH 2-INP 14-TSSOP Logic Type: NAND Gate Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Max): 2µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.5V Logic Level - High: 1.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-TSSOP Package / Case: 14-TSSOP (0.173", 4.40mm Width)	封装: 14-TSSOP (0.173", 4.40mm Width)	库存4,560
TC74VCX2125FTEL	Toshiba Semiconductor and Storage	IC BUFF NON-INVERT 3.6V 14TSSOP Logic Type: Buffer, Non-Inverting Number of Elements: 4 Number of Bits per Element: 1 Input Type: - Output Type: Push-Pull Current - Output High, Low: 12mA, 12mA Voltage - Supply: 1.8 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 14-TSSOP	封装: 14-TSSOP (0.173", 4.40mm Width)	库存34,260
74VHC125FT	Toshiba Semiconductor and Storage	IC BUS BUFFER QUAD N-INV 14TSSOP Logic Type: Buffer, Non-Inverting Number of Elements: 4 Number of Bits per Element: 1 Input Type: - Output Type: Push-Pull Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 14-TSSOP	封装: 14-TSSOP (0.173", 4.40mm Width)	库存3,712
TC75S51FUTE85LF	Toshiba Semiconductor and Storage	IC OP AMP GP CMOS USV Amplifier Type: General Purpose Number of Circuits: 1 Output Type: - Slew Rate: 0.5 V/µs Gain Bandwidth Product: - -3db Bandwidth: - Current - Input Bias: 1pA Voltage - Input Offset: 2mV Current - Supply: 60µA Current - Output / Channel: - Voltage - Supply, Single/Dual (±): 1.5 V ~ 7 V, ±0.75 V ~ 3.5 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	封装: 5-TSSOP, SC-70-5, SOT-353	库存25,320
TLP3241(TP15,F)	Toshiba Semiconductor and Storage	PHOTORELAY 40V 4-SSOP Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 10 Ohm Load Current: 140mA Voltage - Input: 1.3VDC Voltage - Load: 0 ~ 40 V Mounting Type: Surface Mount Termination Style: SMD (SMT) Tab Package / Case: 4-SMD (0.165", 4.20mm) Supplier Device Package: 4-SSOP Relay Type: Relay	封装: 4-SMD (0.165", 4.20mm)	库存8,118
TLP293-4(4LGBTPE	Toshiba Semiconductor and Storage	OPTOISOLATOR 3.75KV TRANS SO16 Number of Channels: 4 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 500µA Current Transfer Ratio (Max): 600% @ 500µA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.179", 4.55mm Width) Supplier Device Package: 16-SO	封装: 16-SOIC (0.179", 4.55mm Width)	库存5,454
TLP7930(F	Toshiba Semiconductor and Storage	ISOLATION AMPLIFIER; DIGITAL OUT Type: - Number of Channels: 1 Resolution (Bits): - Sampling Rate (Per Second): - Data Interface: - Voltage Supply Source: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,728
TC7SPB9307TU,LF(CT	Toshiba Semiconductor and Storage	X34 GENERAL-PURPOSE BUS SWITCH L Type: Bus Switch Circuit: 1 x 1:1 Independent Circuits: 1 Current - Output High, Low: - Voltage Supply Source: Dual Supply Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	封装: 6-SMD, Flat Leads	库存24,276
TCR5BM105,L3F	Toshiba Semiconductor and Storage	500MA LDO VOUT=1.05V DROPOUT=100 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.05V Voltage - Output (Max): - Voltage Dropout (Max): 0.14V @ 500mA Current - Output: 500mA Current - Quiescent (Iq): 36µA Current - Supply (Max): - PSRR: 98dB (1kHz) Control Features: Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XDFN Exposed Pad Supplier Device Package: 5-DFNB (1.2x1.2)	封装: 4-XDFN Exposed Pad	库存100,902
RN2304-LF	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SC70 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 47 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	封装: -	库存11,280
GT50J341-Q	Toshiba Semiconductor and Storage	PB-F IGBT / TRANSISTOR TO-3PN IC IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 100 A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A Power - Max: 200 W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P(N)	封装: -	库存288
TW027N65C-S1F	Toshiba Semiconductor and Storage	G3 650V SIC-MOSFET TO-247 27MOH FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 29A, 18V Operating Temperature: 175°C Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	封装: -	库存36
TB9044AFNG-EL	Toshiba Semiconductor and Storage	AUTOMOTIVE VOLTAGE REGULATOR Applications: Power Supply, Automotive Applications Voltage - Input: - Number of Outputs: 2 Voltage - Output: 6V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad Supplier Device Package: 48-HTSSOP	封装: -	Request a Quote
RN1908-LF-CT	Toshiba Semiconductor and Storage	NPNX2 BRT Q1BSR22KOHM Q1BER47KOH Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封装: -	库存9,000

GT60N321(Q)

Toshiba Semiconductor and Storage

IGBT 1000V 60A 170W TO3P LH

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 1000V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A
Power - Max: 170W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 330ns/700ns
Test Condition: -
Reverse Recovery Time (trr): 2.5µs
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PL
Supplier Device Package: TO-3P(LH)

封装: TO-3PL

库存22,140

TK18A50D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 500V 18A TO-220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 270 mOhm @ 9A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

库存4,736

TK16A60W,S4X

Toshiba Semiconductor and Storage

MOSFET N CH 600V 15.8A DTMOSIV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 15.8A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.7V @ 790µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 300V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.9A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

库存6,240

TJ50S06M3L(T6L1,NQ

Toshiba Semiconductor and Storage

MOSFET P-CH 60V 50A DPAK-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6290pF @ 10V
Vgs (Max): +10V, -20V
FET Feature: -
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 25A, 10V
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK+
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存2,112

TK14E65W5,S1X

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 13.7A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 300V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.9A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

封装: TO-220-3

库存7,548

SSM6L16FETE85LF

Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.18A/0.1A ES6

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 0.1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Power - Max: 150mW
Operating Temperature: 150°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6 (1.6x1.6)

封装: SOT-563, SOT-666

库存3,408

2SA949-Y,ONK-1F(J

Toshiba Semiconductor and Storage

TRANS PNP 50MA 150V TO226-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Power - Max: 800mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

封装: TO-226-3, TO-92-3 Long Body

库存2,240

2SA1020-Y(T6CN,A,F

Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

Transistor Type: PNP
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

封装: TO-226-3, TO-92-3 Long Body

库存2,768

RN1425TE85LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 200MW SMINI

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 470
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 300MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

封装: TO-236-3, SC-59, SOT-23-3

库存6,480

2SC5088-O(TE85L,F)

Toshiba Semiconductor and Storage

TRANS RF NPN 12V 500MHZ USQ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Gain: 18dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: USQ

封装: SC-82A, SOT-343

库存5,760

1SV323,H3F

Toshiba Semiconductor and Storage

DIODE VARACTOR 10V ESC

Capacitance @ Vr, F: 7.1pF @ 4V, 1MHz
Capacitance Ratio: 4.3
Capacitance Ratio Condition: C1/C4
Voltage - Peak Reverse (Max): 10V
Diode Type: Single
Q @ Vr, F: -
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: ESC

封装: SC-79, SOD-523

库存2,896

CRF03(TE85L,Q,M)

Toshiba Semiconductor and Storage

DIODE GEN PURP 600V 700MA SFLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 700mA
Voltage - Forward (Vf) (Max) @ If: 2V @ 700mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C

封装: SOD-123F

库存720,000

CTS520,L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 200MA CST2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 30V
Capacitance @ Vr, F: 16pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)

封装: SOD-882

库存187,992

TA78L005AP,SDENF(J

Toshiba Semiconductor and Storage

IC REG LINEAR 150MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 150mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -30°C ~ 85°C
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM

封装: TO-226-3, TO-92-3 Long Body

库存5,424

TB67B008FNG,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 24SSOP

Motor Type - Stepper: -
Motor Type - AC, DC: Brushless DC (BLDC)
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (3)
Interface: PWM
Technology: Power MOSFET
Step Resolution: -
Applications: General Purpose
Current - Output: 3A
Voltage - Supply: 5.5 V ~ 22 V
Voltage - Load: 5.5 V ~ 22 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Supplier Device Package: 24-SSOP

封装: 24-LSSOP (0.220", 5.60mm Width)

库存2,432

TC74VHC595F(EL,K,F

Toshiba Semiconductor and Storage

IC 8-BIT SHIFT REGISTER 16SOP

Logic Type: Shift Register
Output Type: Tri-State
Number of Elements: 1
Number of Bits per Element: 8
Function: Serial to Parallel
Voltage - Supply: 2 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 16-SOP

封装: 16-SOIC (0.209", 5.30mm Width)

库存16,494

TC74VHC00FTELM

Toshiba Semiconductor and Storage

IC GATE NAND 4CH 2-INP 14-TSSOP

Logic Type: NAND Gate
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 2 V ~ 5.5 V
Current - Quiescent (Max): 2µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.5V
Logic Level - High: 1.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)

封装: 14-TSSOP (0.173", 4.40mm Width)

库存4,560

TC74VCX2125FTEL

Toshiba Semiconductor and Storage

IC BUFF NON-INVERT 3.6V 14TSSOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 4
Number of Bits per Element: 1
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 12mA, 12mA
Voltage - Supply: 1.8 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 14-TSSOP

封装: 14-TSSOP (0.173", 4.40mm Width)

库存34,260

74VHC125FT

Toshiba Semiconductor and Storage

IC BUS BUFFER QUAD N-INV 14TSSOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 4
Number of Bits per Element: 1
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 14-TSSOP

封装: 14-TSSOP (0.173", 4.40mm Width)

库存3,712

TC75S51FUTE85LF

Toshiba Semiconductor and Storage

IC OP AMP GP CMOS USV

Amplifier Type: General Purpose
Number of Circuits: 1
Output Type: -
Slew Rate: 0.5 V/µs
Gain Bandwidth Product: -
-3db Bandwidth: -
Current - Input Bias: 1pA
Voltage - Input Offset: 2mV
Current - Supply: 60µA
Current - Output / Channel: -
Voltage - Supply, Single/Dual (±): 1.5 V ~ 7 V, ±0.75 V ~ 3.5 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV

封装: 5-TSSOP, SC-70-5, SOT-353

库存25,320

TLP3241(TP15,F)

Toshiba Semiconductor and Storage

PHOTORELAY 40V 4-SSOP

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 10 Ohm
Load Current: 140mA
Voltage - Input: 1.3VDC
Voltage - Load: 0 ~ 40 V
Mounting Type: Surface Mount
Termination Style: SMD (SMT) Tab
Package / Case: 4-SMD (0.165", 4.20mm)
Supplier Device Package: 4-SSOP
Relay Type: Relay

封装: 4-SMD (0.165", 4.20mm)

库存8,118

TLP293-4(4LGBTPE

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

Number of Channels: 4
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 500µA
Current Transfer Ratio (Max): 600% @ 500µA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Supplier Device Package: 16-SO

封装: 16-SOIC (0.179", 4.55mm Width)

库存5,454

TLP7930(F

Toshiba Semiconductor and Storage

ISOLATION AMPLIFIER; DIGITAL OUT

Type: -
Number of Channels: 1
Resolution (Bits): -
Sampling Rate (Per Second): -
Data Interface: -
Voltage Supply Source: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,728

TC7SPB9307TU,LF(CT

Toshiba Semiconductor and Storage

X34 GENERAL-PURPOSE BUS SWITCH L

Type: Bus Switch
Circuit: 1 x 1:1
Independent Circuits: 1
Current - Output High, Low: -
Voltage Supply Source: Dual Supply
Voltage - Supply: 1.65V ~ 5V, 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: UF6

封装: 6-SMD, Flat Leads

库存24,276

TCR5BM105,L3F

Toshiba Semiconductor and Storage

500MA LDO VOUT=1.05V DROPOUT=100

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.05V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.14V @ 500mA
Current - Output: 500mA
Current - Quiescent (Iq): 36µA
Current - Supply (Max): -
PSRR: 98dB (1kHz)
Control Features: Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XDFN Exposed Pad
Supplier Device Package: 5-DFNB (1.2x1.2)

封装: 4-XDFN Exposed Pad

库存100,902

RN2304-LF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SC70

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 47 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

封装: -

库存11,280

GT50J341-Q

Toshiba Semiconductor and Storage

PB-F IGBT / TRANSISTOR TO-3PN IC

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 100 A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
Power - Max: 200 W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P(N)

封装: -

库存288

TW027N65C-S1F

Toshiba Semiconductor and Storage

G3 650V SIC-MOSFET TO-247 27MOH

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: 5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2288 pF @ 400 V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 29A, 18V
Operating Temperature: 175°C
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3

封装: -

库存36

TB9044AFNG-EL

Toshiba Semiconductor and Storage

AUTOMOTIVE VOLTAGE REGULATOR

Applications: Power Supply, Automotive Applications
Voltage - Input: -
Number of Outputs: 2
Voltage - Output: 6V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Supplier Device Package: 48-HTSSOP

封装: -

Request a Quote

RN1908-LF-CT

Toshiba Semiconductor and Storage

NPNX2 BRT Q1BSR22KOHM Q1BER47KOH

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封装: -

库存9,000