页 62 - Toshiba Semiconductor and Storage 产品

零件编号	制造商	描述	封装	库存
TPC8126,LQ(CM	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 11A 8SOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 10V Vgs (Max): +20V, -25V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	封装: 8-SOIC (0.173", 4.40mm Width)	库存5,888
TPH8R903NL,LQ	Toshiba Semiconductor and Storage	MOSFET N CH 30V 20A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 24W (Tc) Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	封装: 8-PowerVDFN	库存29,610
TPC8213-H(TE12LQ,M	Toshiba Semiconductor and Storage	MOSFET 2N-CH 60V 5A SOP8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 10V Power - Max: 450mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP (5.5x6.0)	封装: 8-SOIC (0.173", 4.40mm Width)	库存7,136
2SC2235-O(T6FJT,AF	Toshiba Semiconductor and Storage	TRANS NPN 800MA 120V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	封装: TO-226-3, TO-92-3 Long Body	库存2,752
RN1106CT(TPL3)	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.05W CST3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 20V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 50mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	封装: SC-101, SOT-883	库存7,456
RN4981,LF(CT	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.2W US6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100µA (ICBO) Frequency - Transition: 250MHz, 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封装: 6-TSSOP, SC-88, SOT-363	库存22,758
TA58M05S,KDQ(M	Toshiba Semiconductor and Storage	IC REG LINEAR 500MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 500mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 105°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: LSTM	封装: TO-220-3 Full Pack	库存5,184
TBD62502AFWG,EL	Toshiba Semiconductor and Storage	IC LOAD SWITCH 7CH 0.3A 16PSOP Switch Type: General Purpose Number of Outputs: 7 Ratio - Input:Output: 1:1 Output Configuration: Low Side Output Type: N-Channel Interface: On/Off Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.75A Rds On (Typ): - Input Type: Inverting Features: - Fault Protection: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOP	封装: 16-SOIC (0.154", 3.90mm Width)	库存17,952
TB6562ANG,8	Toshiba Semiconductor and Storage	IC MOTOR DVR BIPO STEPPING Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: DMOS Step Resolution: 1, 1/2, 1/4 Applications: General Purpose Current - Output: 1.5A Voltage - Supply: 10 V ~ 34 V Voltage - Load: 10 V ~ 34 V Operating Temperature: -20°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 24-SDIP (0.300", 7.62mm) Supplier Device Package: 24-SDIP	封装: 24-SDIP (0.300", 7.62mm)	库存6,848
TB67S158FTG,EL	Toshiba Semiconductor and Storage	IC STEP MOTOR DRVR PAR 48WQFN Motor Type - Stepper: Unipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (8) Interface: Parallel Technology: DMOS Step Resolution: - Applications: General Purpose Current - Output: 1.5A Voltage - Supply: 4.75 V ~ 5.25 V Voltage - Load: 10 V ~ 60 V Operating Temperature: -20°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 48-WFQFN Exposed Pad Supplier Device Package: 48-WQFN (7x7)	封装: 48-WFQFN Exposed Pad	库存7,584
TB62208FNG,C8,EL	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 48HTSSOP Motor Type - Stepper: Bipolar Motor Type - AC, DC: - Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: Parallel Technology: DMOS Step Resolution: 1, 1/2 Applications: General Purpose Current - Output: 1.8A Voltage - Supply: 4.5 V ~ 5.5 V Voltage - Load: 10 V ~ 38 V Operating Temperature: -20°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad Supplier Device Package: 48-HTSSOP	封装: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad	库存4,704
THGBMHG7C2LBAWR	Toshiba Semiconductor and Storage	IC FLASH 128GBIT 52MHZ 169BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: MMC Clock Frequency: 52MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-WFBGA Supplier Device Package: 153-WFBGA (11.5x13)	封装: 153-WFBGA	库存5,040
TC74VHC595FK(EL,K)	Toshiba Semiconductor and Storage	IC 8-BIT SHIFT REGISTER 16VSSOP Logic Type: Shift Register Output Type: Tri-State Number of Elements: 1 Number of Bits per Element: 8 Function: Serial to Parallel Voltage - Supply: 2 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 16-VFSOP (0.118", 3.00mm Width) Supplier Device Package: 16-VSSOP	封装: 16-VFSOP (0.118", 3.00mm Width)	库存20,364
TC7W02FUTE12LF	Toshiba Semiconductor and Storage	IC GATE NOR 2CH 2-INP SM8 Logic Type: NOR Gate Number of Circuits: 2 Number of Inputs: 2 Features: - Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Max): 1µA Current - Output High, Low: 5.2mA, 5.2mA Logic Level - Low: 0.5 V ~ 1.8 V Logic Level - High: 1.5 V ~ 4.2 V Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: SM8 Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)	封装: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)	库存45,834
TL1WK-NW1,LCS	Toshiba Semiconductor and Storage	LED LETERAS COOL WHT 5000K 2SMD Color: White, Cool CCT (K): 5000K Flux @ 85°C, Current - Test: - Flux @ 25°C, Current - Test: 22 lm (Typ) Current - Test: 180mA Voltage - Forward (Vf) (Typ): 2.8V Lumens/Watt @ Current - Test: 130 lm/W CRI (Color Rendering Index): 80 Current - Max: 180mA Viewing Angle: 165° Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: SMD Size / Dimension: 0.026" L x 0.026" W (0.65mm x 0.65mm) Height - Seated (Max): 0.015" (0.39mm)	封装: 2-SMD, No Lead	库存6,714
TMPM361F10FG(C,J)	Toshiba Semiconductor and Storage	INTEGRATED CIRCUIT MICROCONTROLL Core Processor: - Core Size: - Speed: - Connectivity: - Peripherals: - Number of I/O: - Program Memory Size: - Program Memory Type: - EEPROM Size: - RAM Size: - Voltage - Supply (Vcc/Vdd): - Data Converters: - Oscillator Type: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,760
TMPM067FWQG(EL,Z)	Toshiba Semiconductor and Storage	TX FAMILY MCU Core Processor: ARM® Cortex®-M0 Core Size: 32-Bit Speed: 24MHz Connectivity: I²C, SIO, SPI, UART/USART, USB Peripherals: DMA, LVD, POR, WDT Number of I/O: 32 Program Memory Size: 128KB (128K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.8 V ~ 3.6 V Data Converters: A/D 8x10b Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: 48-QFN (7x7)	封装: 48-VFQFN Exposed Pad	库存31,668
TB9057FG	Toshiba Semiconductor and Storage	AUTOMOTIVE MOTOR H-BRIDGE DRIVER Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Function: Driver Output Configuration: Pre-Driver Interface: PWM Technology: Bi-CMOS Step Resolution: - Applications: Automotive Current - Output: - Voltage - Supply: 5V ~ 21V Voltage - Load: - Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 48-LQFP Supplier Device Package: 48-LQFP (7x7)	封装: 48-LQFP	库存7,232
SSM10N954L-EFF	Toshiba Semiconductor and Storage	COMMON-DRAIN NCH MOSFET, 12V, 13 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1.11mA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: TCSPAC-153001 Package / Case: 10-SMD, No Lead	封装: -	库存30,000
TC78H651FNG-EL	Toshiba Semiconductor and Storage	BRUSHED MOTOR DRIVER IC, 2-CHANN Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (4) Interface: - Technology: DMOS Step Resolution: - Applications: General Purpose Current - Output: 1.5A Voltage - Supply: 1.8V ~ 6V Voltage - Load: 1.8V ~ 6V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-TSSOP	封装: -	库存12,000
TPH9R00CQH-LQ	Toshiba Semiconductor and Storage	UMOS10 SOP-ADV(N) 150V 9MOHM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960mW (Ta), 210W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 32A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	封装: -	库存27,105
TB9058FNG-EL	Toshiba Semiconductor and Storage	AUTOMOTIVE H SWITCH MOTOR DRIVER Motor Type - Stepper: - Motor Type - AC, DC: Servo DC Function: Controller - Commutation, Direction Management Output Configuration: Half Bridge (2) Interface: PWM Technology: Bi-CMOS Step Resolution: - Applications: - Current - Output: 2A Voltage - Supply: 7V ~ 18V Voltage - Load: 0.5V ~ 12V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 24-LSSOP (0.220", 5.60mm Width) Supplier Device Package: 24-SSOP	封装: -	库存1,407
RN1311-LF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A SC70 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 10 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	封装: -	库存9,000
1N4148WT-L3F-B	Toshiba Semiconductor and Storage	100 V/0.25 A SWITCHING DIODE, SO Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Current - Reverse Leakage @ Vr: 200 nA @ 80 V Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: ESC Operating Temperature - Junction: 150°C	封装: -	Request a Quote
TK12P60W-RVQ-S	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 11.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 600µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封装: -	Request a Quote
SSM3J372R-LXHF	Toshiba Semiconductor and Storage	AECQ MOSFET PCH -30V -6A SOT23F FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs(th) (Max) @ Id: 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V Vgs (Max): +6V, -12V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	封装: -	库存30,726
S1PA7-UD	Toshiba Semiconductor and Storage	IGBT TRANS MODULE TO3PN IGBT Type: - Configuration: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Power - Max: - Vce(on) (Max) @ Vge, Ic: - Current - Collector Cutoff (Max): - Input Capacitance (Cies) @ Vce: - Input: - NTC Thermistor: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote
RN2103MFV-L3F-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A VESM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	封装: -	库存240
SSM3K16CTC-L3F	Toshiba Semiconductor and Storage	MOSFET N-CH 20V 200MA CST3C FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: CST3C Package / Case: SC-101, SOT-883	封装: -	库存55,089
TPH1R204PL1-LQ	Toshiba Semiconductor and Storage	UMOS9 SOP-ADV(N) PD=170W F=1MHZ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960mW (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5.75) Package / Case: 8-PowerTDFN	封装: -	库存65,853

TPC8126,LQ(CM

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 11A 8SOP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 10V
Vgs (Max): +20V, -25V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 10 mOhm @ 5.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP (5.5x6.0)
Package / Case: 8-SOIC (0.173", 4.40mm Width)

封装: 8-SOIC (0.173", 4.40mm Width)

库存5,888

TPH8R903NL,LQ

Toshiba Semiconductor and Storage

MOSFET N CH 30V 20A 8SOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta), 24W (Tc)
Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 10A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

封装: 8-PowerVDFN

库存29,610

TPC8213-H(TE12LQ,M

Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 5A SOP8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 10V
Power - Max: 450mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP (5.5x6.0)

封装: 8-SOIC (0.173", 4.40mm Width)

库存7,136

2SC2235-O(T6FJT,AF

Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Power - Max: 900mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

封装: TO-226-3, TO-92-3 Long Body

库存2,752

RN1106CT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.05W CST3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 50mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: CST3

封装: SC-101, SOT-883

库存7,456

RN4981,LF(CT

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100µA (ICBO)
Frequency - Transition: 250MHz, 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封装: 6-TSSOP, SC-88, SOT-363

库存22,758

TA58M05S,KDQ(M

Toshiba Semiconductor and Storage

IC REG LINEAR 500MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 500mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 105°C
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: LSTM

封装: TO-220-3 Full Pack

库存5,184

TBD62502AFWG,EL

Toshiba Semiconductor and Storage

IC LOAD SWITCH 7CH 0.3A 16PSOP

Switch Type: General Purpose
Number of Outputs: 7
Ratio - Input:Output: 1:1
Output Configuration: Low Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.75A
Rds On (Typ): -
Input Type: Inverting
Features: -
Fault Protection: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOP

封装: 16-SOIC (0.154", 3.90mm Width)

库存17,952

TB6562ANG,8

Toshiba Semiconductor and Storage

IC MOTOR DVR BIPO STEPPING

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: Parallel
Technology: DMOS
Step Resolution: 1, 1/2, 1/4
Applications: General Purpose
Current - Output: 1.5A
Voltage - Supply: 10 V ~ 34 V
Voltage - Load: 10 V ~ 34 V
Operating Temperature: -20°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 24-SDIP (0.300", 7.62mm)
Supplier Device Package: 24-SDIP

封装: 24-SDIP (0.300", 7.62mm)

库存6,848

TB67S158FTG,EL

Toshiba Semiconductor and Storage

IC STEP MOTOR DRVR PAR 48WQFN

Motor Type - Stepper: Unipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (8)
Interface: Parallel
Technology: DMOS
Step Resolution: -
Applications: General Purpose
Current - Output: 1.5A
Voltage - Supply: 4.75 V ~ 5.25 V
Voltage - Load: 10 V ~ 60 V
Operating Temperature: -20°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-WFQFN Exposed Pad
Supplier Device Package: 48-WQFN (7x7)

封装: 48-WFQFN Exposed Pad

库存7,584

TB62208FNG,C8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 48HTSSOP

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: -
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: Parallel
Technology: DMOS
Step Resolution: 1, 1/2
Applications: General Purpose
Current - Output: 1.8A
Voltage - Supply: 4.5 V ~ 5.5 V
Voltage - Load: 10 V ~ 38 V
Operating Temperature: -20°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad
Supplier Device Package: 48-HTSSOP

封装: 48-TFSOP (0.240", 6.10mm Width) Exposed Pad

库存4,704

THGBMHG7C2LBAWR

Toshiba Semiconductor and Storage

IC FLASH 128GBIT 52MHZ 169BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: MMC
Clock Frequency: 52MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-WFBGA
Supplier Device Package: 153-WFBGA (11.5x13)

封装: 153-WFBGA

库存5,040

TC74VHC595FK(EL,K)

Toshiba Semiconductor and Storage

IC 8-BIT SHIFT REGISTER 16VSSOP

Logic Type: Shift Register
Output Type: Tri-State
Number of Elements: 1
Number of Bits per Element: 8
Function: Serial to Parallel
Voltage - Supply: 2 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-VFSOP (0.118", 3.00mm Width)
Supplier Device Package: 16-VSSOP

封装: 16-VFSOP (0.118", 3.00mm Width)

库存20,364

TC7W02FUTE12LF

Toshiba Semiconductor and Storage

IC GATE NOR 2CH 2-INP SM8

Logic Type: NOR Gate
Number of Circuits: 2
Number of Inputs: 2
Features: -
Voltage - Supply: 2 V ~ 6 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 5.2mA, 5.2mA
Logic Level - Low: 0.5 V ~ 1.8 V
Logic Level - High: 1.5 V ~ 4.2 V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: SM8
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

封装: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

库存45,834

TL1WK-NW1,LCS

Toshiba Semiconductor and Storage

LED LETERAS COOL WHT 5000K 2SMD

Color: White, Cool
CCT (K): 5000K
Flux @ 85°C, Current - Test: -
Flux @ 25°C, Current - Test: 22 lm (Typ)
Current - Test: 180mA
Voltage - Forward (Vf) (Typ): 2.8V
Lumens/Watt @ Current - Test: 130 lm/W
CRI (Color Rendering Index): 80
Current - Max: 180mA
Viewing Angle: 165°
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: SMD
Size / Dimension: 0.026" L x 0.026" W (0.65mm x 0.65mm)
Height - Seated (Max): 0.015" (0.39mm)

封装: 2-SMD, No Lead

库存6,714

TMPM361F10FG(C,J)

Toshiba Semiconductor and Storage

INTEGRATED CIRCUIT MICROCONTROLL

Core Processor: -
Core Size: -
Speed: -
Connectivity: -
Peripherals: -
Number of I/O: -
Program Memory Size: -
Program Memory Type: -
EEPROM Size: -
RAM Size: -
Voltage - Supply (Vcc/Vdd): -
Data Converters: -
Oscillator Type: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,760

TMPM067FWQG(EL,Z)

Toshiba Semiconductor and Storage

TX FAMILY MCU

Core Processor: ARM® Cortex®-M0
Core Size: 32-Bit
Speed: 24MHz
Connectivity: I²C, SIO, SPI, UART/USART, USB
Peripherals: DMA, LVD, POR, WDT
Number of I/O: 32
Program Memory Size: 128KB (128K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 1.8 V ~ 3.6 V
Data Converters: A/D 8x10b
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: 48-QFN (7x7)

封装: 48-VFQFN Exposed Pad

库存31,668

TB9057FG

Toshiba Semiconductor and Storage

AUTOMOTIVE MOTOR H-BRIDGE DRIVER

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Function: Driver
Output Configuration: Pre-Driver
Interface: PWM
Technology: Bi-CMOS
Step Resolution: -
Applications: Automotive
Current - Output: -
Voltage - Supply: 5V ~ 21V
Voltage - Load: -
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Supplier Device Package: 48-LQFP (7x7)

封装: 48-LQFP

库存7,232

SSM10N954L-EFF

Toshiba Semiconductor and Storage

COMMON-DRAIN NCH MOSFET, 12V, 13

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12 V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 1.11mA
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 800mW (Ta)
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: TCSPAC-153001
Package / Case: 10-SMD, No Lead

封装: -

库存30,000

TC78H651FNG-EL

Toshiba Semiconductor and Storage

BRUSHED MOTOR DRIVER IC, 2-CHANN

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (4)
Interface: -
Technology: DMOS
Step Resolution: -
Applications: General Purpose
Current - Output: 1.5A
Voltage - Supply: 1.8V ~ 6V
Voltage - Load: 1.8V ~ 6V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOP

封装: -

库存12,000

TPH9R00CQH-LQ

Toshiba Semiconductor and Storage

UMOS10 SOP-ADV(N) 150V 9MOHM

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 4.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 75 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 960mW (Ta), 210W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 32A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

封装: -

库存27,105

TB9058FNG-EL

Toshiba Semiconductor and Storage

AUTOMOTIVE H SWITCH MOTOR DRIVER

Motor Type - Stepper: -
Motor Type - AC, DC: Servo DC
Function: Controller - Commutation, Direction Management
Output Configuration: Half Bridge (2)
Interface: PWM
Technology: Bi-CMOS
Step Resolution: -
Applications: -
Current - Output: 2A
Voltage - Supply: 7V ~ 18V
Voltage - Load: 0.5V ~ 12V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 24-LSSOP (0.220", 5.60mm Width)
Supplier Device Package: 24-SSOP

封装: -

库存1,407

RN1311-LF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 10 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

封装: -

库存9,000

1N4148WT-L3F-B

Toshiba Semiconductor and Storage

100 V/0.25 A SWITCHING DIODE, SO

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Current - Reverse Leakage @ Vr: 200 nA @ 80 V
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: ESC
Operating Temperature - Junction: 150°C

封装: -

Request a Quote

TK12P60W-RVQ-S

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 11.5A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 5.8A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

Request a Quote

SSM3J372R-LXHF

Toshiba Semiconductor and Storage

AECQ MOSFET PCH -30V -6A SOT23F

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
Vgs (Max): +6V, -12V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: SOT-23F
Package / Case: SOT-23-3 Flat Leads

封装: -

库存30,726

S1PA7-UD

Toshiba Semiconductor and Storage

IGBT TRANS MODULE TO3PN

IGBT Type: -
Configuration: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Power - Max: -
Vce(on) (Max) @ Vge, Ic: -
Current - Collector Cutoff (Max): -
Input Capacitance (Cies) @ Vce: -
Input: -
NTC Thermistor: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

RN2103MFV-L3F-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 22 kOhms
Resistor - Emitter Base (R2) (Ohms): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

封装: -

库存240

SSM3K16CTC-L3F

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 200MA CST3C

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 12 pF @ 10 V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: CST3C
Package / Case: SC-101, SOT-883

封装: -

库存55,089

TPH1R204PL1-LQ

Toshiba Semiconductor and Storage

UMOS9 SOP-ADV(N) PD=170W F=1MHZ

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5.75)
Package / Case: 8-PowerTDFN

封装: -

库存65,853