页 4 - Toshiba Semiconductor and Storage 产品 - 晶体管 - FET，MOSFET - 阵列

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SSM6L13TU(T5L,F,T)	Toshiba Semiconductor and Storage	MOSFET ARRAY N/P-CH 20V UF6 FET Type: N and P-Channel FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 143 mOhm @ 600mA, 4V, 234 mOhm @ 600mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V, 250pF @ 10V Power - Max: 500mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	封装: 6-SMD, Flat Leads	库存3,840	Logic Level Gate, 1.8V Drive	20V	800mA (Ta)	143 mOhm @ 600mA, 4V, 234 mOhm @ 600mA, 4V	1V @ 1mA	-	268pF @ 10V, 250pF @ 10V	500mW	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	UF6
SSM6N48FU,RF(D	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 0.1A FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3.2 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 15.1pF @ 3V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封装: 6-TSSOP, SC-88, SOT-363	库存2,464	Logic Level Gate, 2.5V Drive	30V	100mA (Ta)	3.2 Ohm @ 10mA, 4V	1.5V @ 100µA	-	15.1pF @ 3V	300mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
SSM6L11TU(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET N/P-CH 20V 0.5A UF6 S FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA Rds On (Max) @ Id, Vgs: 145 mOhm @ 250MA, 4V Vgs(th) (Max) @ Id: 1.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V Power - Max: 500mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	封装: 6-SMD, Flat Leads	库存3,456	Logic Level Gate	20V	500mA	145 mOhm @ 250MA, 4V	1.1V @ 100µA	-	268pF @ 10V	500mW	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	UF6
TPCL4203(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET 2N-CH 4CHIPLGA FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 10V Power - Max: 500mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XLGA Supplier Device Package: 4-Chip LGA	封装: 4-XLGA	库存96,000	Standard	-	-	-	1.2V @ 200µA	-	685pF @ 10V	500mW	150°C (TJ)	Surface Mount	4-XLGA	4-Chip LGA
TPCL4202(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET 2N-CH 4CHIPLGA FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V Power - Max: 500mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XLGA Supplier Device Package: 4-Chip LGA	封装: 4-XLGA	库存2,688	Standard	-	-	-	1.2V @ 200µA	-	780pF @ 10V	500mW	150°C (TJ)	Surface Mount	4-XLGA	4-Chip LGA
TPCL4201(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET 2N-CH 4CHIPLGA FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V Power - Max: 500mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XLGA Supplier Device Package: 4-Chip LGA	封装: 4-XLGA	库存2,880	Standard	-	-	-	1.2V @ 200µA	-	720pF @ 10V	500mW	150°C (TJ)	Surface Mount	4-XLGA	4-Chip LGA
TPC8221-H,LQ(S	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 6A 8SOP FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.3V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 10V Power - Max: 450mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,808	Standard	30V	6A	25 mOhm @ 3A, 10V	2.3V @ 100µA	12nC @ 10V	830pF @ 10V	450mW	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SSM6P15FE(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET 2P-CH 30V 0.1A ES6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.1pF @ 3V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	封装: SOT-563, SOT-666	库存1,056,000	Logic Level Gate	30V	100mA	12 Ohm @ 10mA, 4V	1.7V @ 100µA	-	9.1pF @ 3V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6 (1.6x1.6)
SSM6N42FE(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 0.8A ES6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA Rds On (Max) @ Id, Vgs: 240 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	封装: SOT-563, SOT-666	库存3,168	Logic Level Gate	20V	800mA	240 mOhm @ 500mA, 4.5V	1V @ 1mA	2nC @ 4.5V	90pF @ 10V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6 (1.6x1.6)
SSM6N37CTD(TPL3)	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 0.25A CST6D FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 250mA Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V Power - Max: 140mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: CST6D	封装: 6-SMD, Flat Leads	库存4,592	Logic Level Gate	20V	250mA	2.2 Ohm @ 100mA, 4.5V	1V @ 1mA	-	12pF @ 10V	140mW	150°C (TJ)	Surface Mount	6-SMD, Flat Leads	CST6D
TPC8213-H(TE12LQ,M	Toshiba Semiconductor and Storage	MOSFET 2N-CH 60V 5A SOP8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 50 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 10V Power - Max: 450mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP (5.5x6.0)	封装: 8-SOIC (0.173", 4.40mm Width)	库存7,136	Logic Level Gate	60V	5A	50 mOhm @ 2.5A, 10V	2.3V @ 1mA	11nC @ 10V	625pF @ 10V	450mW	150°C (TJ)	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP (5.5x6.0)
TPC8212-H(TE12LQ,M	Toshiba Semiconductor and Storage	MOSFET 2N-CH 30V 6A SOP8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 21 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V Power - Max: 450mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP (5.5x6.0)	封装: 8-SOIC (0.173", 4.40mm Width)	库存3,280	Logic Level Gate	30V	6A	21 mOhm @ 3A, 10V	2.3V @ 1mA	16nC @ 10V	840pF @ 10V	450mW	150°C (TJ)	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP (5.5x6.0)