Toshiba Semiconductor and Storage 产品 - 晶体管 - FET,MOSFET - 阵列 | 深圳黑森尔电子
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Toshiba Semiconductor and Storage 产品 - 晶体管 - FET,MOSFET - 阵列

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制造商
描述
封装
库存
数量
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SSM10N961L-ELF
Toshiba Semiconductor and Storage

30V N-CH COMMON DRAIN FET RSS:9.

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 2.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 880mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 10-XFLGA, CSP
  • Supplier Device Package: TCSPAG-341501
封装: -
库存28,470
-
30V
9A (Ta)
-
2.3V @ 250µA
17.3nC @ 10V
-
880mW (Ta)
150°C
Surface Mount
10-XFLGA, CSP
TCSPAG-341501
SSM6P39TU-LF
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 1.5A UF6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 1.8V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 213mOhm @ 1A, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: UF6
封装: -
库存26,805
Logic Level Gate, 1.8V Drive
20V
1.5A (Ta)
213mOhm @ 1A, 4V
1V @ 1mA
6.4nC @ 4V
250pF @ 10V
500mW (Ta)
150°C
Surface Mount
6-SMD, Flat Leads
UF6
SSM6P36TU-LF
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.33A UF6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: UF6
封装: -
库存11,769
Logic Level Gate, 1.5V Drive
20V
330mA (Ta)
1.31Ohm @ 100mA, 4.5V
1V @ 1mA
1.2nC @ 4V
43pF @ 10V
500mW (Ta)
150°C
Surface Mount
6-SMD, Flat Leads
UF6
SSM6N7002BFU-T5L-F
Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.2A US6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 200mA
  • Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 3.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
  • Power - Max: 300mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
封装: -
Request a Quote
Logic Level Gate
60V
200mA
2.1Ohm @ 500mA, 10V
3.1V @ 250µA
-
17pF @ 25V
300mW
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
SSM6N55NU-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-µDFN (2x2)
封装: -
库存1,455
Logic Level Gate
30V
4A
46mOhm @ 4A, 10V
2.5V @ 100µA
2.5nC @ 4.5V
280pF @ 15V
1W
150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-µDFN (2x2)
SSM6N813R-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 100V 3.5A 6TSOPF

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V
  • Power - Max: 1.5W (Ta)
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: 6-TSOP-F
封装: -
库存24,597
-
100V
3.5A (Ta)
112mOhm @ 3.5A, 10V
2.5V @ 100µA
3.6nC @ 4.5V
242pF @ 15V
1.5W (Ta)
175°C
Surface Mount
6-SMD, Flat Leads
6-TSOP-F
SSM6P54TU-LF
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 1.2A UF6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
  • Rds On (Max) @ Id, Vgs: 228mOhm @ 600mA, 2.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 331pF @ 10V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: UF6
封装: -
库存13,695
Logic Level Gate, 1.5V Drive
20V
1.2A (Ta)
228mOhm @ 600mA, 2.5V
1V @ 1mA
7.7nC @ 4V
331pF @ 10V
500mW (Ta)
150°C
Surface Mount
6-SMD, Flat Leads
UF6
TPC8228-H-LQ
Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 3.8A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A
  • Rds On (Max) @ Id, Vgs: 57mOhm @ 1.9A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
  • Power - Max: 1.5W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: -
Request a Quote
-
60V
3.8A
57mOhm @ 1.9A, 10V
2.3V @ 100µA
11nC @ 10V
640pF @ 10V
1.5W (Ta)
150°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SSM6P35AFU-LF
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.25A US6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 1.2V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 10V
  • Power - Max: 285mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
封装: -
库存17,970
Logic Level Gate, 1.2V Drive
20V
250mA (Ta)
1.4Ohm @ 150mA, 4.5V
1V @ 100µA
-
42pF @ 10V
285mW (Ta)
150°C
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
SSM6L807R-LF
Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V 4A 6TSOPF

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.74nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: 6-TSOP-F
封装: -
库存18,000
-
30V
4A (Ta)
39.1mOhm @ 2A, 4.5V
1V @ 1mA
3.2nC @ 4.5V, 6.74nC @ 4.5V
310pF @ 15V, 480pF @ 10V
1.4W (Ta)
150°C
Surface Mount
6-SMD, Flat Leads
6-TSOP-F
SSM6N16FE-L3F
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.1A ES6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
  • Power - Max: 150mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
封装: -
库存23,130
-
20V
100mA (Ta)
3Ohm @ 10mA, 4V
1.1V @ 100µA
-
9.3pF @ 3V
150mW (Ta)
150°C
Surface Mount
SOT-563, SOT-666
ES6
SSM6N37FE-LM
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.25A ES6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 250mA
  • Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
封装: -
库存10,455
Logic Level Gate
20V
250mA
2.2Ohm @ 100mA, 4.5V
1V @ 1mA
-
12pF @ 10V
150mW
150°C (TJ)
Surface Mount
SOT-563, SOT-666
ES6
SSM6N68NU-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 1.8V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-µDFN (2x2)
封装: -
库存3,981
Logic Level Gate, 1.8V Drive
30V
4A (Ta)
84mOhm @ 2A, 4.5V
1V @ 1mA
1.8nC @ 4.5V
129pF @ 15V
2W (Ta)
150°C
Surface Mount
6-WDFN Exposed Pad
6-µDFN (2x2)
SSM6P47NU-LF
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 4A 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 95mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-µDFN (2x2)
封装: -
库存8,649
Logic Level Gate
20V
4A
95mOhm @ 1.5A, 4.5V
1V @ 1mA
4.6nC @ 4.5V
290pF @ 10V
1W
150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-µDFN (2x2)
SSM6N40TU-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 1.6A UF6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: UF6
封装: -
库存22,368
Logic Level Gate, 4V Drive
30V
1.6A (Ta)
122mOhm @ 1A, 10V
2.6V @ 1mA
5.1nC @ 10V
180pF @ 15V
500mW (Ta)
150°C
Surface Mount
6-SMD, Flat Leads
UF6
SSM14N956L-EFF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 12V 20A TCSPED

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 1.57mA
  • Gate Charge (Qg) (Max) @ Vgs: 76nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.33W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 14-SMD, No Lead
  • Supplier Device Package: TCSPED-302701
封装: -
库存29,565
-
12V
20A (Ta)
1.35mOhm @ 10A, 4.5V
1.4V @ 1.57mA
76nC @ 4V
-
1.33W (Ta)
150°C
Surface Mount
14-SMD, No Lead
TCSPED-302701
SSM5N16FU-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.1A USV

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
  • Power - Max: 200mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: USV
封装: -
库存9,000
-
20V
100mA (Ta)
3Ohm @ 10mA, 4V
1.1V @ 100µA
-
9.3pF @ 3V
200mW (Ta)
150°C
Surface Mount
5-TSSOP, SC-70-5, SOT-353
USV
SSM6N48FU-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 0.1A US6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Rds On (Max) @ Id, Vgs: 3.2Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 15.1pF @ 3V
  • Power - Max: 300mW
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
封装: -
库存8,250
-
30V
100mA (Ta)
3.2Ohm @ 10mA, 4V
1.5V @ 100µA
-
15.1pF @ 3V
300mW
150°C
Surface Mount
6-TSSOP, SC-88, SOT-363
US6
SSM6P40TU-LF
Toshiba Semiconductor and Storage

MOSFET 2P-CH 30V 1.4A UF6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
  • Rds On (Max) @ Id, Vgs: 226mOhm @ 1A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 15V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: UF6
封装: -
库存26,037
Logic Level Gate, 4V Drive
30V
1.4A (Ta)
226mOhm @ 1A, 10V
2V @ 1mA
2.9nC @ 10V
120pF @ 15V
500mW (Ta)
150°C
Surface Mount
6-SMD, Flat Leads
UF6
SSM6L820R-LF
Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V/20V 4A 6TSOPF

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: 6-TSOP-F
封装: -
库存17,625
-
30V, 20V
4A (Ta)
39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
1V @ 1mA, 1.2V @ 1mA
3.2nC @ 4.5V, 6.7nC @ 4.5V
310pF @ 15V, 480pF @ 10V
1.4W (Ta)
150°C
Surface Mount
6-SMD, Flat Leads
6-TSOP-F
SSM6L820R-LXHF
Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V/20V 4A 6TSOPF

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: 6-TSOP-F
封装: -
库存44,349
-
30V, 20V
4A (Ta)
39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
1V @ 1mA, 1.2V @ 1mA
3.2nC @ 4.5V, 6.7nC @4.5V
310pF @ 15V, 480pF @ 10V
1.4W (Ta)
150°C
Surface Mount
6-SMD, Flat Leads
6-TSOP-F
TPC8227-H-LQ
Toshiba Semiconductor and Storage

MOSFET 2N-CH 40V 5.1A 8SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A
  • Rds On (Max) @ Id, Vgs: 33mOhm @ 2.6A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
  • Power - Max: 1.5W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: -
Request a Quote
-
40V
5.1A
33mOhm @ 2.6A, 10V
2.3V @ 100µA
10nC @ 10V
640pF @ 10V
1.5W (Ta)
150°C
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
SSM6N24TU-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 0.5A UF6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Rds On (Max) @ Id, Vgs: 145mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 10V
  • Power - Max: 500mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: UF6
封装: -
库存7,695
-
30V
500mA (Ta)
145mOhm @ 500mA, 4.5V
1.1V @ 100µA
-
245pF @ 10V
500mW (Ta)
150°C
Surface Mount
6-SMD, Flat Leads
UF6
SSM6N357R-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.65A 6TSOPF

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 12V
  • Power - Max: 1.5W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: 6-TSOP-F
封装: -
库存20,688
-
60V
650mA (Ta)
1.8Ohm @ 150mA, 5V
2V @ 1mA
1.5nC @ 5V
60pF @ 12V
1.5W (Ta)
150°C
Surface Mount
6-SMD, Flat Leads
6-TSOP-F
TPCP8407-LF
Toshiba Semiconductor and Storage

MOSFET N/P-CH 40V 5A/4A PS-8

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4A (Ta)
  • Rds On (Max) @ Id, Vgs: 36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V, 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 10V, 810pF @ 10V
  • Power - Max: 690mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: PS-8
封装: -
库存9,984
-
40V
5A (Ta), 4A (Ta)
36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V
3V @ 1mA
11.8nC @ 10V, 18nC @ 10V
505pF @ 10V, 810pF @ 10V
690mW (Ta)
150°C
Surface Mount
8-SMD, Flat Lead
PS-8
SSM6P816R-LF
Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 6A 6TSOPF

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 1.8V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Rds On (Max) @ Id, Vgs: 30.1mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 10V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: 6-TSOP-F
封装: -
库存12,447
Logic Level Gate, 1.8V Drive
20V
6A (Ta)
30.1mOhm @ 4A, 4.5V
1V @ 1mA
16.6nC @ 4.5V
1030pF @ 10V
1.4W (Ta)
150°C
Surface Mount
6-SMD, Flat Leads
6-TSOP-F
SSM6N813R-LXHF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 100V 3.5A 6TSOPF

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 112mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 242pF @ 15V
  • Power - Max: 1.5W (Ta)
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: 6-TSOP-F
封装: -
库存15,822
Logic Level Gate, 4.5V Drive
100V
3.5A (Ta)
112mOhm @ 3.5A, 10V
2.5V @ 100µA
3.6nC @ 4.5V
242pF @ 15V
1.5W (Ta)
175°C
Surface Mount
6-SMD, Flat Leads
6-TSOP-F
SSM6L14FE-TE85L-F
Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.8A ES6

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), 720mA (Ta)
  • Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V, 1.76nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V, 110pF @ 10V
  • Power - Max: 150mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6
封装: -
库存52,236
Logic Level Gate, 1.5V Drive
20V
800mA (Ta), 720mA (Ta)
240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V
1V @ 1mA
2nC @ 4.5V, 1.76nC @ 4.5V
90pF @ 10V, 110pF @ 10V
150mW (Ta)
150°C
Surface Mount
SOT-563, SOT-666
ES6
TPC8207-TE12L
Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 6A 8-SOP

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 4.8A, 4V
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 10V
  • Power - Max: 750mW
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SOP (5.5x6.0)
封装: -
Request a Quote
Logic Level Gate
20V
6A
20mOhm @ 4.8A, 4V
1.2V @ 200µA
22nC @ 5V
2010pF @ 10V
750mW
-
Surface Mount
8-SOIC (0.173", 4.40mm Width)
8-SOP (5.5x6.0)
SSM6N67NU-LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A 6DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate, 1.8V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V
  • Power - Max: 2W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-µDFN (2x2)
封装: -
库存31,257
Logic Level Gate, 1.8V Drive
30V
4A (Ta)
39.1mOhm @ 2A, 4.5V
1V @ 1mA
3.2nC @ 4.5V
310pF @ 15V
2W (Ta)
150°C
Surface Mount
6-WDFN Exposed Pad
6-µDFN (2x2)