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IXYS |
IGBT 600V 56A 190W TO220
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 56A
- Current - Collector Pulsed (Icm): 130A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
- Power - Max: 190W
- Switching Energy: 350µJ (on), 340µJ (off)
- Input Type: Standard
- Gate Charge: 64nC
- Td (on/off) @ 25°C: 22ns/192ns
- Test Condition: 360V, 24A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 30ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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封装: TO-220-3 |
库存7,920 |
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IXYS |
IGBT 600V 300W TO247
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 280A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
- Power - Max: 300W
- Switching Energy: 840µJ (on), 660µJ (off)
- Input Type: Standard
- Gate Charge: 115nC
- Td (on/off) @ 25°C: 22ns/130ns
- Test Condition: 480V, 30A, 5 Ohm, 15V
- Reverse Recovery Time (trr): 100ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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封装: TO-247-3 |
库存52,968 |
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IXYS |
MODULE IGBT CBI E2
- IGBT Type: Trench
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 62A
- Power - Max: 220W
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
- Current - Collector Cutoff (Max): 1.75mA
- Input Capacitance (Cies) @ Vce: 2.5nF @ 25V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
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封装: E2 |
库存2,768 |
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IXYS |
MOD IGBT PHASE LEG 600V ECOPAC2
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 121A
- Power - Max: 379W
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 130A
- Current - Collector Cutoff (Max): 1.2mA
- Input Capacitance (Cies) @ Vce: 4.2nF @ 25V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC2
- Supplier Device Package: ECO-PAC2
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封装: ECO-PAC2 |
库存4,560 |
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IXYS |
IGBT MODULE 1200V 150A HEX
- IGBT Type: PT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 220A
- Power - Max: 695W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
- Current - Collector Cutoff (Max): 500µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: V1A-PAK
- Supplier Device Package: V1A-PAK
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封装: V1A-PAK |
库存6,944 |
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IXYS |
IGBT XPT 650V 166A SOT-227B
- IGBT Type: PT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 170A
- Power - Max: 600W
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
- Current - Collector Cutoff (Max): 25µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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封装: SOT-227-4, miniBLOC |
库存7,872 |
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IXYS |
MOSFET N-CH 300V 40A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 80 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-268
- Package / Case: TO-220-3, Short Tab
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封装: TO-220-3, Short Tab |
库存7,312 |
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IXYS |
MOSFET N-CH 550V 72A PLUS264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 550V
- Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 258nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 890W (Tc)
- Rds On (Max) @ Id, Vgs: 72 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS264?
- Package / Case: TO-264-3, TO-264AA
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封装: TO-264-3, TO-264AA |
库存4,592 |
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IXYS |
MOSFET N-CH 500V 44A TO-268
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 830W (Tc)
- Rds On (Max) @ Id, Vgs: 140 mOhm @ 22A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
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封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存5,520 |
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IXYS |
MOSFET N-CH 500V 21A I4-PAC-5
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 220 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS i4-PAC?
- Package / Case: i4-Pac?-5
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封装: i4-Pac?-5 |
库存6,304 |
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IXYS |
MOSFET N-CH 55V 260A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7 (IXTA..7)
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
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封装: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
库存5,200 |
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IXYS |
MOSFET N-CH 300V 36A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 110 mOhm @ 500mA, 10V
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存2,624 |
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IXYS |
MOSFET P-CH 85V 96A TO-247
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 85V
- Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13100pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 298W (Tc)
- Rds On (Max) @ Id, Vgs: 13 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存6,180 |
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IXYS |
THYRISTOR PHASE 1200V ISOPLUS247
- Voltage - Off State: 1200V
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Voltage - On State (Vtm) (Max): 1.4V
- Current - On State (It (AV)) (Max): 48A
- Current - On State (It (RMS)) (Max): 75A
- Current - Hold (Ih) (Max): 200mA
- Current - Off State (Max): 10mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 140°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PLUS247?-3
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封装: TO-247-3 |
库存3,488 |
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IXYS |
MOD THYRISTOR/DIODE 1600V Y1-CU
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 250A
- Current - On State (It (RMS)) (Max): 450A
- Voltage - Gate Trigger (Vgt) (Max): 2V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A, 9600A
- Current - Hold (Ih) (Max): 150mA
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y1-CU
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封装: Y1-CU |
库存4,000 |
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IXYS |
MOD THYRISTOR DUAL 1600V TO240AA
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 51A
- Current - On State (It (RMS)) (Max): 80A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1230A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
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封装: TO-240AA |
库存7,152 |
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IXYS |
DIODE GEN PURP 200V 69A TO247AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 69A
- Voltage - Forward (Vf) (Max) @ If: 1.08V @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 50µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -40°C ~ 150°C
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封装: TO-247-2 |
库存3,408 |
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IXYS |
IC BREAKING RECTIFIER 1400V 1.1A
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Braking Rectifier
- Voltage - DC Reverse (Vr) (Max): 1400V
- Current - Average Rectified (Io) (per Diode): 1.5A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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封装: Module |
库存5,264 |
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IXYS |
DIODE MODULE 19.2KV 1.7A
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 19200V
- Current - Average Rectified (Io) (per Diode): 1.7A
- Voltage - Forward (Vf) (Max) @ If: 12V @ 2A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 19200V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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封装: Module |
库存4,784 |
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IXYS |
DIODE MODULE 1.8KV 120A TO240AA
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800V
- Current - Average Rectified (Io) (per Diode): 120A
- Voltage - Forward (Vf) (Max) @ If: 1.43V @ 300A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 15mA @ 1800V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
- Supplier Device Package: TO-240AA
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封装: TO-240AA |
库存6,160 |
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IXYS |
RECT BRIDGE 3PH 1600V PWS-E-1
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1600V
- Current - Average Rectified (Io): 175A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A
- Current - Reverse Leakage @ Vr: 200µA @ 1600V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-E1
- Supplier Device Package: PWS-E1
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封装: PWS-E1 |
库存2,100 |
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IXYS |
IC DRVR HALF BRIDGE GATE 14DIP
- Driven Configuration: -
- Channel Type: -
- Number of Drivers: -
- Gate Type: -
- Voltage - Supply: -
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: -
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: 14-DIP (0.300", 7.62mm)
- Supplier Device Package: 14-DIP
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封装: 14-DIP (0.300", 7.62mm) |
库存5,152 |
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IXYS |
IC CURRENT REGULATOR DPAK
- Function: Current Regulator
- Sensing Method: -
- Accuracy: -
- Voltage - Input: -
- Current - Output: 2mA
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
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封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存2,512 |
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IXYS |
MONO SOLAR CELL 89MM X 67MM
- Power (Watts) - Max: 892mW
- Current @ Pmpp: 178mA
- Voltage @ Pmpp: 5V
- Current Short Circuit (Isc): 200mA
- Type: Monocrystalline
- Voltage - Open Circuit: 6.3V
- Operating Temperature: -
- Package / Case: Cell (20)
- Size / Dimension: 3.504" L x 2.638" W x 0.079" H (89.00mm x 67.00mm x 2.00mm)
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封装: Cell (20) |
库存8,694 |
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IXYS |
DIODE GEN PURP 4.2KV 1185A W4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 4200 V
- Current - Average Rectified (Io): 1185A
- Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 2420 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 30 mA @ 4200 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: W4
- Operating Temperature - Junction: -55°C ~ 160°C
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封装: - |
Request a Quote |
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IXYS |
DIODE GEN PURP 3.6KV 1411A W4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 3600 V
- Current - Average Rectified (Io): 1411A
- Voltage - Forward (Vf) (Max) @ If: 2 V @ 2870 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 30 mA @ 3600 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: W4
- Operating Temperature - Junction: -55°C ~ 160°C
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封装: - |
Request a Quote |
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IXYS |
SCR 3.2KV W108
- Voltage - Off State: 3.2 kV
- Voltage - Gate Trigger (Vgt) (Max): -
- Current - Gate Trigger (Igt) (Max): -
- Voltage - On State (Vtm) (Max): -
- Current - On State (It (AV)) (Max): 4845 A
- Current - On State (It (RMS)) (Max): -
- Current - Hold (Ih) (Max): -
- Current - Off State (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): 65000A @ 50Hz
- SCR Type: Standard Recovery
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: TO-200AF
- Supplier Device Package: W108
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封装: - |
Request a Quote |
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IXYS |
MOSFET N-CH 250V 240A PLUS247-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1250W (Tc)
- Rds On (Max) @ Id, Vgs: 5mOhm @ 120A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247™-3
- Package / Case: TO-247-3 Variant
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封装: - |
库存1,161 |
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IXYS |
DIODE GEN PURP 1.9KV 6672A -
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1900 V
- Current - Average Rectified (Io): 6672A
- Voltage - Forward (Vf) (Max) @ If: 1.37 V @ 5000 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 52 µs
- Current - Reverse Leakage @ Vr: 100 mA @ 1900 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: TO-200AF
- Supplier Device Package: TO-200AF
- Operating Temperature - Junction: -40°C ~ 160°C
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封装: - |
Request a Quote |
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IXYS |
DIODE ARRAY GP 200V 15A TO263AA
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io) (per Diode): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 200 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AA
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封装: - |
Request a Quote |
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