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IXYS |
IGBT 1200V 30A 150W TO268
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 30A
- Current - Collector Pulsed (Icm): 60A
- Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 15A
- Power - Max: 150W
- Switching Energy: 1.05mJ (off)
- Input Type: Standard
- Gate Charge: 69nC
- Td (on/off) @ 25°C: 25ns/150ns
- Test Condition: 960V, 15A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268
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封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存6,608 |
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IXYS |
IGBT 600V 200A 660W TO264AA
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 200A
- Current - Collector Pulsed (Icm): 300A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 120A
- Power - Max: 660W
- Switching Energy: 2.4mJ (on), 5.5mJ (off)
- Input Type: Standard
- Gate Charge: 350nC
- Td (on/off) @ 25°C: 60ns/200ns
- Test Condition: 480V, 100A, 2.4 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264 (IXGK)
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封装: TO-264-3, TO-264AA |
库存2,032 |
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IXYS |
IGBT 900V 90A 500W TO247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 900V
- Current - Collector (Ic) (Max): 90A
- Current - Collector Pulsed (Icm): 180A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
- Power - Max: 500W
- Switching Energy: 1.9mJ (on), 1mJ (off)
- Input Type: Standard
- Gate Charge: 74nC
- Td (on/off) @ 25°C: 27ns/78ns
- Test Condition: 450V, 40A, 5 Ohm, 15V
- Reverse Recovery Time (trr): 100ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXYH)
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封装: TO-247-3 |
库存7,904 |
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IXYS |
IGBT 600V 75A 300W TO247AD
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 75A
- Current - Collector Pulsed (Icm): 250A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
- Power - Max: 300W
- Switching Energy: 410µJ (on), 230µJ (off)
- Input Type: Standard
- Gate Charge: 77nC
- Td (on/off) @ 25°C: 19ns/60ns
- Test Condition: 400V, 30A, 3 Ohm, 15V
- Reverse Recovery Time (trr): 25ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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封装: TO-247-3 |
库存32,400 |
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IXYS |
MOSFET N-CH
- IGBT Type: -
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 3000V
- Current - Collector (Ic) (Max): 34A
- Power - Max: 150W
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 24-SMD Module, 9 Leads
- Supplier Device Package: SMPD
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封装: 24-SMD Module, 9 Leads |
库存3,120 |
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IXYS |
MOSFET N-CH 1000V 44A PLUS264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1250W (Tc)
- Rds On (Max) @ Id, Vgs: 220 mOhm @ 22A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS264?
- Package / Case: TO-264-3, TO-264AA
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封装: TO-264-3, TO-264AA |
库存3,792 |
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IXYS |
MOSFET N-CH 200V 210A PLUS264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 18600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1500W (Tc)
- Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 105A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS264?
- Package / Case: TO-264-3, TO-264AA
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封装: TO-264-3, TO-264AA |
库存7,584 |
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IXYS |
MOSFET N-CH 1000V 14A PLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 750 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247?-3
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存103,464 |
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IXYS |
MOSFET N-CH 200V 50A TO-247AD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 45 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存8,988 |
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IXYS |
MOSFET N-CH 150V 96A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Rds On (Max) @ Id, Vgs: 24 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存4,112 |
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IXYS |
MOSFET N-CH 800V 2A TO-252AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 70W (Tc)
- Rds On (Max) @ Id, Vgs: 6 Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存3,504 |
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IXYS |
MOSFET P-CH 85V 24A TO-263
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 85V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 65 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXTA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,492 |
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IXYS |
SCR THRYRISTOR CA 1200V WC-500
- Structure: Common Anode - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1200V
- Current - On State (It (AV)) (Max): 700A
- Current - On State (It (RMS)) (Max): 1331A
- Voltage - Gate Trigger (Vgt) (Max): -
- Current - Gate Trigger (Igt) (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): 18200 @ 50MHz
- Current - Hold (Ih) (Max): -
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: WC-500
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封装: WC-500 |
库存7,552 |
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IXYS |
MOD THYRISTOR/DIODE 1600V Y4-M6
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 130A
- Current - On State (It (RMS)) (Max): 300A
- Voltage - Gate Trigger (Vgt) (Max): 2.5V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5080A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
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封装: TO-240AA |
库存7,024 |
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IXYS |
RECT BRIDGE 3PH 25A 1400V V1-A
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1400V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 1.19V @ 10A
- Current - Reverse Leakage @ Vr: 10µA @ 1400V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: V1-A
- Supplier Device Package: V1-A
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封装: V1-A |
库存5,664 |
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IXYS |
RECT BRIDGE 3PH 25A 1200V FO-B
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 2.2V @ 150A
- Current - Reverse Leakage @ Vr: 300µA @ 1200V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: QC Terminal
- Package / Case: 5-Square, FO-B
- Supplier Device Package: PWS-E1
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封装: 5-Square, FO-B |
库存4,848 |
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IXYS |
IC GATE DRIVER DUAL 4A 6-DFN
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 30 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 4A, 4A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 9ns, 8ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VDFN Exposed Pad
- Supplier Device Package: 6-DFN (4x5)
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封装: 6-VDFN Exposed Pad |
库存5,584 |
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IXYS |
IC GATE DRIVER DUAL 2A 8-SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 30 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 7.5ns, 6.5ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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封装: 8-SOIC (0.154", 3.90mm Width) |
库存2,784 |
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IXYS |
IC DIODE MODULE BOD 0.2A 1400V
- Voltage - Clamping: 1400V (1.4kV)
- Technology: Mixed Technology
- Number of Circuits: 2
- Number of Circuits: 2
- Applications: High Voltage
- Mounting Type: PCB, Through Hole
- Package / Case: Radial
- Supplier Device Package: BOD
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封装: Radial |
库存4,446 |
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IXYS |
IC DIODE MODULE BOD 0.7A 4200V
- Voltage - Clamping: 4200V (4.2kV)
- Technology: Mixed Technology
- Number of Circuits: 4
- Number of Circuits: 4
- Applications: High Voltage
- Mounting Type: PCB, Through Hole
- Package / Case: Radial
- Supplier Device Package: BOD
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封装: Radial |
库存3,544 |
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IXYS |
IXZ631DF18N50 DEV BOARD
- Type: MOSFET Driver
- Frequency: -
- For Use With/Related Products: IXZ631DF18N50
- Supplied Contents: Board
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封装: - |
库存7,056 |
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IXYS |
DIODE ARR SCHOTT 200V 10A TO220
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 910 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 µA @ 200 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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封装: - |
Request a Quote |
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IXYS |
MOSFET P-CH 50V 32A TO252
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 39mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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封装: - |
Request a Quote |
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IXYS |
DIODE GEN PURP 80V 437A W1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80 V
- Current - Average Rectified (Io): 437A
- Voltage - Forward (Vf) (Max) @ If: 1.47 V @ 635 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 mA @ 80 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, A-PUK
- Supplier Device Package: W1
- Operating Temperature - Junction: -40°C ~ 125°C
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封装: - |
Request a Quote |
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IXYS |
IGBT MODULE - PHASELEG SIMBUS F-
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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封装: - |
Request a Quote |
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IXYS |
DIODE GEN PURP 4KV 2325A W121
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 4000 V
- Current - Average Rectified (Io): 2325A
- Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 2500 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 5.4 µs
- Current - Reverse Leakage @ Vr: 150 mA @ 4000 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AD
- Supplier Device Package: W121
- Operating Temperature - Junction: -40°C ~ 150°C
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封装: - |
Request a Quote |
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IXYS |
MOSFET N-CH 850V 8A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 850 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 33W (Tc)
- Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Isolated Tab
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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封装: - |
Request a Quote |
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IXYS |
IGBT
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 33 A
- Current - Collector Pulsed (Icm): 140 A
- Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A
- Power - Max: 90 W
- Switching Energy: 550µJ (on), 800µJ (off)
- Input Type: Standard
- Gate Charge: 39 nC
- Td (on/off) @ 25°C: 23ns/150ns
- Test Condition: 400V, 24A, 10Ohm, 15V
- Reverse Recovery Time (trr): 36 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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封装: - |
库存900 |
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IXYS |
BIPOLARMODULE-RECTIFIER+BRAKE E2
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1.6 kV
- Current - Average Rectified (Io): 280 A
- Voltage - Forward (Vf) (Max) @ If: -
- Current - Reverse Leakage @ Vr: -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
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封装: - |
Request a Quote |
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IXYS |
SCR 2.2KV 94A TO268AA
- Voltage - Off State: 2.2 kV
- Voltage - Gate Trigger (Vgt) (Max): 1.4 V
- Current - Gate Trigger (Igt) (Max): 80 mA
- Voltage - On State (Vtm) (Max): 2.52 V
- Current - On State (It (AV)) (Max): 60 A
- Current - On State (It (RMS)) (Max): 94 A
- Current - Hold (Ih) (Max): 100 mA
- Current - Off State (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): 720A, 780A
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA (D3Pak-HV)
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封装: - |
Request a Quote |
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