|
|
IXYS |
IGBT 600V 56A 170W ISOPLUS247
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 56A
- Current - Collector Pulsed (Icm): 200A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
- Power - Max: 170W
- Switching Energy: 200µJ (off)
- Input Type: Standard
- Gate Charge: 95nC
- Td (on/off) @ 25°C: 18ns/90ns
- Test Condition: 400V, 30A, 3 Ohm, 15V
- Reverse Recovery Time (trr): 25ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: ISOPLUS247?
- Supplier Device Package: ISOPLUS247?
|
封装: ISOPLUS247? |
库存6,384 |
|
|
|
IXYS |
MOD IGBT BUCK 1200V ECO-PAC2
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 92A
- Power - Max: 379W
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 75A
- Current - Collector Cutoff (Max): 3.7mA
- Input Capacitance (Cies) @ Vce: 3.3nF @ 25V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC2
- Supplier Device Package: ECO-PAC2
|
封装: ECO-PAC2 |
库存7,888 |
|
|
|
IXYS |
MOSFET N-CH 800V 13A TO-268
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3250pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Rds On (Max) @ Id, Vgs: 700 mOhm @ 6.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
|
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存3,312 |
|
|
|
IXYS |
MOSFET N-CH 500V 44A TO-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5440pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 658W (Tc)
- Rds On (Max) @ Id, Vgs: 140 mOhm @ 22A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
|
封装: TO-3P-3, SC-65-3 |
库存474,864 |
|
|
|
IXYS |
MOSFET N-CH 200V 102A TO3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 750W (Tc)
- Rds On (Max) @ Id, Vgs: 23 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
|
封装: TO-3P-3, SC-65-3 |
库存103,464 |
|
|
|
IXYS |
MOSFET N-CH 1000V 3A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 4.8 Ohm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
封装: TO-220-3 |
库存3,600 |
|
|
|
IXYS |
MOSFET N-CH 1000V 23A ISOPLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9940pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 570W (Tc)
- Rds On (Max) @ Id, Vgs: 350 mOhm @ 16A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247?
- Package / Case: TO-247-3
|
封装: TO-247-3 |
库存6,688 |
|
|
|
IXYS |
MOSFET N-CH 800V 44A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 44A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700W (Tc)
- Rds On (Max) @ Id, Vgs: 165 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
|
封装: SOT-227-4, miniBLOC |
库存6,496 |
|
|
|
IXYS |
DIODE SCHOTTKY 150V 6A TO252AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 780mV @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300µA @ 150V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
- Operating Temperature - Junction: -55°C ~ 175°C
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存6,416 |
|
|
|
IXYS |
DIODE ARRAY SCHOTTKY 60V TO220AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io) (per Diode): 30A
- Voltage - Forward (Vf) (Max) @ If: 780mV @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20mA @ 60V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
|
封装: TO-220-3 |
库存3,408 |
|
|
|
IXYS |
DIODE ARRAY SCHOTTKY 150V TO247
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io) (per Diode): 30A
- Voltage - Forward (Vf) (Max) @ If: 810mV @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2mA @ 150V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-3P-3 Full Pack
- Supplier Device Package: TO-247AD
|
封装: TO-3P-3 Full Pack |
库存6,064 |
|
|
|
IXYS |
IC GATE DRIVER 14A 6-DFN
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 30 V
- Logic Voltage - VIL, VIH: 1V, 2.5V
- Current - Peak Output (Source, Sink): 14A, 14A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 25ns, 22ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VDFN Exposed Pad
- Supplier Device Package: 6-DFN (4x5)
|
封装: 6-VDFN Exposed Pad |
库存6,304 |
|
|
|
IXYS |
IC MOSFET DRVR 9A LOSIDE 8-DIP
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 35 V
- Logic Voltage - VIL, VIH: 0.8V, 3.5V
- Current - Peak Output (Source, Sink): 9A, 9A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 10ns, 10ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
|
封装: 8-DIP (0.300", 7.62mm) |
库存16,284 |
|
|
|
IXYS |
POWER MOSFET TO-3
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
封装: - |
Request a Quote |
|
|
|
IXYS |
POWER MOSFET TO-3
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
封装: - |
Request a Quote |
|
|
|
IXYS |
MOSFET N-CH 200V 50A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
|
封装: - |
Request a Quote |
|
|
|
IXYS |
AEC-Q GRADE 50 AMP STANDARD HIGH
- Voltage - Off State: 600 V
- Voltage - Gate Trigger (Vgt) (Max): 1.3 V
- Current - Gate Trigger (Igt) (Max): 15 mA
- Voltage - On State (Vtm) (Max): 1.6 V
- Current - On State (It (AV)) (Max): 31.5 A
- Current - On State (It (RMS)) (Max): 50 A
- Current - Hold (Ih) (Max): 50 mA
- Current - Off State (Max): 5 µA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 456A, 550A
- SCR Type: Sensitive Gate
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
|
封装: - |
库存2,979 |
|
|
|
IXYS |
MOSFET N-CH 18A SOT-227B
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
封装: - |
Request a Quote |
|
|
|
IXYS |
SCR 2.8KV 7410A W81
- Voltage - Off State: 2.8 kV
- Voltage - Gate Trigger (Vgt) (Max): 3 V
- Current - Gate Trigger (Igt) (Max): 300 mA
- Voltage - On State (Vtm) (Max): 2.1 V
- Current - On State (It (AV)) (Max): 3790 A
- Current - On State (It (RMS)) (Max): 7410 A
- Current - Hold (Ih) (Max): 1 A
- Current - Off State (Max): 250 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 55000A @ 50Hz
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: TO-200AF
- Supplier Device Package: W81
|
封装: - |
Request a Quote |
|
|
|
IXYS |
MOSFET N-CH 200V 160A SOT227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 390W (Tc)
- Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
|
封装: - |
Request a Quote |
|
|
|
IXYS |
DIODE GEN PURP 2.2KV 2840A W117
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2200 V
- Current - Average Rectified (Io): 2840A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: W117
- Operating Temperature - Junction: -
|
封装: - |
Request a Quote |
|
|
|
IXYS |
DIODE GEN PURP 1.2KV 944A W1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 944A
- Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 1930 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 15 mA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, A-PUK
- Supplier Device Package: W1
- Operating Temperature - Junction: -40°C ~ 190°C
|
封装: - |
Request a Quote |
|
|
|
IXYS |
DIODE ARRAY SCHOTTKY
- Diode Configuration: -
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io) (per Diode): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
封装: - |
Request a Quote |
|
|
|
IXYS |
MOSFET N-CH 500V 40A TO268
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 540W (Tc)
- Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
|
封装: - |
Request a Quote |
|
|
|
IXYS |
MOSFET N-CH 1000V 70A PLUS264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 9160 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1785W (Tc)
- Rds On (Max) @ Id, Vgs: 89mOhm @ 35A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS264™
- Package / Case: TO-264-3, TO-264AA
|
封装: - |
Request a Quote |
|
|
|
IXYS |
IXTA140P05T
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50 V
- Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 298W (Tc)
- Rds On (Max) @ Id, Vgs: 9mOhm @ 70A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AA
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
|
封装: - |
Request a Quote |
|
|
|
IXYS |
BIPOLAR MODULE - THYRISTOR TO-2
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1.6 kV
- Current - On State (It (AV)) (Max): 140 A
- Current - On State (It (RMS)) (Max): 220 A
- Voltage - Gate Trigger (Vgt) (Max): 1.5 V
- Current - Gate Trigger (Igt) (Max): 150 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 2.4kA, 2.59kA
- Current - Hold (Ih) (Max): 200 mA
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
|
封装: - |
库存108 |
|
|
|
IXYS |
SCR MODULE
- Structure: -
- Number of SCRs, Diodes: -
- Voltage - Off State: -
- Current - On State (It (AV)) (Max): -
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): -
- Current - Gate Trigger (Igt) (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): -
- Current - Hold (Ih) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
|
封装: - |
Request a Quote |
|
|
|
IXYS |
MOSFET N-CH 2500V 200MA TO263HV
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 2500 V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 450Ohm @ 50mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263HV
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
|
封装: - |
Request a Quote |
|
|
|
IXYS |
SCR 3.2KV 3360A W70
- Voltage - Off State: 3.2 kV
- Voltage - Gate Trigger (Vgt) (Max): 3 V
- Current - Gate Trigger (Igt) (Max): 300 mA
- Voltage - On State (Vtm) (Max): 3 V
- Current - On State (It (AV)) (Max): 1725 A
- Current - On State (It (RMS)) (Max): 3360 A
- Current - Hold (Ih) (Max): 1 A
- Current - Off State (Max): 150 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 22000A @ 50Hz
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Clamp On
- Package / Case: TO-200AC, K-PUK
- Supplier Device Package: W70
|
封装: - |
Request a Quote |
|