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IXYS |
IGBT 1200V 70A 300W TO247
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 70A
- Current - Collector Pulsed (Icm): 140A
- Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 35A
- Power - Max: 300W
- Switching Energy: 3.8mJ (off)
- Input Type: Standard
- Gate Charge: 170nC
- Td (on/off) @ 25°C: 50ns/180ns
- Test Condition: 960V, 35A, 5 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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封装: TO-247-3 |
库存7,856 |
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IXYS |
IGBT 600V 55A 200W TO247AD
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 55A
- Current - Collector Pulsed (Icm): 110A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
- Power - Max: 200W
- Switching Energy: 700µJ (off)
- Input Type: Standard
- Gate Charge: 100nC
- Td (on/off) @ 25°C: 30ns/90ns
- Test Condition: 480V, 30A, 4.7 Ohm, 15V
- Reverse Recovery Time (trr): 50ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXSH)
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封装: TO-247-3 |
库存390,000 |
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IXYS |
IGBT 600V TO-247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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封装: TO-247-3 |
库存2,800 |
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IXYS |
IGBT 600V 48A 150W TO268
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 48A
- Current - Collector Pulsed (Icm): 96A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
- Power - Max: 150W
- Switching Energy: 240µJ (off)
- Input Type: Standard
- Gate Charge: 55nC
- Td (on/off) @ 25°C: 15ns/75ns
- Test Condition: 480V, 24A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268
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封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存6,112 |
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IXYS |
IGBT 1200V TO-247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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封装: TO-247-3 |
库存7,632 |
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IXYS |
MOD IGBT SIXPACK E+
- IGBT Type: NPT
- Configuration: Three Phase
- Voltage - Collector Emitter Breakdown (Max): 1700V
- Current - Collector (Ic) (Max): 500A
- Power - Max: 2200W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 300A
- Current - Collector Cutoff (Max): 1mA
- Input Capacitance (Cies) @ Vce: 33nF @ 25V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E+
- Supplier Device Package: E+
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封装: E+ |
库存4,288 |
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IXYS |
MODULE IGBT CBI E2
- IGBT Type: Trench
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 30A
- Power - Max: 140W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
- Current - Collector Cutoff (Max): 2.7mA
- Input Capacitance (Cies) @ Vce: 1.1nF @ 25V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
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封装: E2 |
库存2,320 |
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IXYS |
MOD IGBT RBSOA SIXPACK E1
- IGBT Type: NPT
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 19A
- Power - Max: 90W
- Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
- Current - Collector Cutoff (Max): 900µA
- Input Capacitance (Cies) @ Vce: 0.6nF @ 25V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E1
- Supplier Device Package: E1
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封装: E1 |
库存7,968 |
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IXYS |
CONVERTER/BRAKE/INVERTER 1.9VCE
- IGBT Type: NPT
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 20A
- Power - Max: 85W
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 10A
- Current - Collector Cutoff (Max): 600µA
- Input Capacitance (Cies) @ Vce: 0.6nF @ 25V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
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封装: E2 |
库存7,008 |
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IXYS |
MOSFET N-CH 100V 334A SMPD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 334A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 670nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 680W (Tc)
- Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SMPD
- Package / Case: 24-PowerSMD, 21 Leads
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封装: 24-PowerSMD, 21 Leads |
库存7,280 |
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IXYS |
MOSFET N-CH 800V 20A TO-264AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 420 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264AA (IXFK)
- Package / Case: TO-264-3, TO-264AA
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封装: TO-264-3, TO-264AA |
库存5,296 |
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IXYS |
MOSFET P-CH 100V 140A TO-268
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 31400pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 568W (Tc)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 70A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
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封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存5,408 |
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IXYS |
MOSFET N-CH 1000V 4A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1456pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存5,536 |
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IXYS |
SCR THRYRISTOR CA 2200V WC-500
- Structure: Common Anode - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 2200V
- Current - On State (It (AV)) (Max): 545A
- Current - On State (It (RMS)) (Max): 1294A
- Voltage - Gate Trigger (Vgt) (Max): 3V
- Current - Gate Trigger (Igt) (Max): 300mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
- Current - Hold (Ih) (Max): 1A
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: WC-500
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封装: WC-500 |
库存3,696 |
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IXYS |
MOD THYRISTOR/DIO 1600V TO-240AA
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 32A
- Current - On State (It (RMS)) (Max): 50A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
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封装: TO-240AA |
库存7,072 |
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IXYS |
DIODE SCHOTTKY 40V 2A SMB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 420mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB (DO-214AA)
- Operating Temperature - Junction: -55°C ~ 150°C
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封装: DO-214AA, SMB |
库存3,472 |
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IXYS |
DIODE GEN PURP 1.2KV 60A TO247AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 2.66V @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 40ns
- Current - Reverse Leakage @ Vr: 650µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -55°C ~ 175°C
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封装: TO-247-2 |
库存7,536 |
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IXYS |
DIODE MODULE 800V 113A TO240AA
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io) (per Diode): 113A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 300A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 15mA @ 800V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
- Supplier Device Package: TO-240AA
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封装: TO-240AA |
库存3,472 |
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IXYS |
IC CURRENT REGULATOR TO220AB
- Function: Current Regulator
- Sensing Method: -
- Accuracy: -
- Voltage - Input: -
- Current - Output: 60mA
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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封装: TO-220-3 |
库存3,312 |
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IXYS |
REVERSE CONDUCTING IGBT
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 16 A
- Current - Collector Pulsed (Icm): 40 A
- Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
- Power - Max: 150 W
- Switching Energy: 2.5mJ (off)
- Input Type: Standard
- Gate Charge: 65 nC
- Td (on/off) @ 25°C: 15ns/250ns
- Test Condition: 1360V, 10A, 10Ohm, 15V
- Reverse Recovery Time (trr): 25 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263HV
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封装: - |
库存42 |
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IXYS |
8 Amp High Temperature Sensitive
- Voltage - Off State: -
- Voltage - Gate Trigger (Vgt) (Max): -
- Current - Gate Trigger (Igt) (Max): -
- Voltage - On State (Vtm) (Max): -
- Current - On State (It (AV)) (Max): -
- Current - On State (It (RMS)) (Max): -
- Current - Hold (Ih) (Max): -
- Current - Off State (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): -
- SCR Type: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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封装: - |
Request a Quote |
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IXYS |
MOSFET N-CH 200V 220A TO264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 960W (Tc)
- Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264
- Package / Case: TO-264-3, TO-264AA
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封装: - |
库存30 |
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IXYS |
SCR 1.2KV 16A TO220ABFP
- Voltage - Off State: 1.2 kV
- Voltage - Gate Trigger (Vgt) (Max): 1.3 V
- Current - Gate Trigger (Igt) (Max): 30 mA
- Voltage - On State (Vtm) (Max): 1.14 V
- Current - On State (It (AV)) (Max): 10 A
- Current - On State (It (RMS)) (Max): 16 A
- Current - Hold (Ih) (Max): 60 mA
- Current - Off State (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
- SCR Type: Standard Recovery
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220ABFP
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封装: - |
Request a Quote |
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IXYS |
MOSFET N/P-CH 100V 54A I4-PAC
- FET Type: MOSFET (Metal Oxide)
- FET Feature: -
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 54A (Tc), 62A (Tc)
- Rds On (Max) @ Id, Vgs: 24mOhm @ 38A, 10V, 11mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA, 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V, 104nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V, 5080pF @ 25V
- Power - Max: 89W, 132W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: ISOPLUSi5-PAK™
- Supplier Device Package: ISOPLUS i4-PAC™
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封装: - |
Request a Quote |
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IXYS |
BIPOLAR MODULE - THYRISTOR Y4-M
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 2.2 kV
- Current - On State (It (AV)) (Max): 180 A
- Current - On State (It (RMS)) (Max): 280 A
- Voltage - Gate Trigger (Vgt) (Max): 2 V
- Current - Gate Trigger (Igt) (Max): 150 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 5400A, 5830A
- Current - Hold (Ih) (Max): 200 mA
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y4-M6
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封装: - |
库存9 |
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IXYS |
SCR 1.2KV 2940A W11
- Voltage - Off State: 1.2 kV
- Voltage - Gate Trigger (Vgt) (Max): 3 V
- Current - Gate Trigger (Igt) (Max): 300 mA
- Voltage - On State (Vtm) (Max): 1.7 V
- Current - On State (It (AV)) (Max): 1446 A
- Current - On State (It (RMS)) (Max): 2940 A
- Current - Hold (Ih) (Max): 1 A
- Current - Off State (Max): 150 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Clamp On
- Package / Case: TO-200AC, K-PUK
- Supplier Device Package: W11
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封装: - |
Request a Quote |
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IXYS |
DIODE GEN PURP 1.5KV 2340A W113
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1500 V
- Current - Average Rectified (Io): 2340A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: W113
- Operating Temperature - Junction: -
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封装: - |
Request a Quote |
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IXYS |
IGBT
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 75 A
- Current - Collector Pulsed (Icm): 170 A
- Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 24A
- Power - Max: 190 W
- Switching Energy: 700µJ (on), 2.4mJ (off)
- Input Type: Standard
- Gate Charge: 66 nC
- Td (on/off) @ 25°C: 18ns/300ns
- Test Condition: 480V, 24A, 10Ohm, 15V
- Reverse Recovery Time (trr): 26 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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封装: - |
库存90 |
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IXYS |
BIPOLARMODULE-RECTIFIER+BRAKE E2
- Diode Type: Three Phase (Braking)
- Technology: Standard
- Voltage - Peak Reverse (Max): 1.6 kV
- Current - Average Rectified (Io): 360 A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 360 A
- Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
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封装: - |
Request a Quote |
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IXYS |
DIODE GEN PURP 400V 30A TO263
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 45 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 400 V
- Capacitance @ Vr, F: 32pF @ 200V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2PAK)
- Operating Temperature - Junction: -55°C ~ 175°C
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封装: - |
Request a Quote |
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