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IXYS |
IGBT 600V 280A 780W PLUS247
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 280A
- Current - Collector Pulsed (Icm): 600A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
- Power - Max: 780W
- Switching Energy: 2.9mJ (on), 3.5mJ (off)
- Input Type: Standard
- Gate Charge: 465nC
- Td (on/off) @ 25°C: 40ns/227ns
- Test Condition: 480V, 100A, 2 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PLUS247?-3
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封装: TO-247-3 |
库存5,232 |
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IXYS |
IGBT 1200V 50A TO-247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 50A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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封装: TO-247-3 |
库存2,704 |
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IXYS |
MOD IGBT DIODE SGL 600V ECOPAC2
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 24.5A
- Power - Max: 82W
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 25A
- Current - Collector Cutoff (Max): 600µA
- Input Capacitance (Cies) @ Vce: 8nF @ 25V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC2
- Supplier Device Package: ECO-PAC2
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封装: ECO-PAC2 |
库存4,656 |
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IXYS |
MODULE IGBT CBI E1
- IGBT Type: NPT
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 30A
- Power - Max: 130W
- Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 30A
- Current - Collector Cutoff (Max): 1mA
- Input Capacitance (Cies) @ Vce: 1nF @ 25V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E1
- Supplier Device Package: E1
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封装: E1 |
库存4,192 |
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IXYS |
IGBT 78A 600V SOT-227B
- IGBT Type: PT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 78A
- Power - Max: 360W
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
- Current - Collector Cutoff (Max): 250µA
- Input Capacitance (Cies) @ Vce: 4.78nF @ 25V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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封装: SOT-227-4, miniBLOC |
库存3,408 |
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IXYS |
MOSFET N-CH 500V 30A PLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 460W (Tc)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS220
- Package / Case: TO-220-3, Short Tab
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封装: TO-220-3, Short Tab |
库存6,160 |
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IXYS |
MOSFET N-CH 1000V 15A ISOPLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11900pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 290W (Tc)
- Rds On (Max) @ Id, Vgs: 430 mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247?
- Package / Case: ISOPLUS247?
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封装: ISOPLUS247? |
库存6,368 |
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IXYS |
MOSFET N-CH 600V 16A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 347W (Tc)
- Rds On (Max) @ Id, Vgs: 470 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存6,368 |
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IXYS |
MOSFET N-CH 1KV 24A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 24A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 267nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 568W (Tc)
- Rds On (Max) @ Id, Vgs: 390 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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封装: SOT-227-4, miniBLOC |
库存6,800 |
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IXYS |
TRIAC 1.2KV 66A TO-268AA
- Triac Type: Standard
- Voltage - Off State: 1200V (1.2kV)
- Current - On State (It (RMS)) (Max): 66A
- Voltage - Gate Trigger (Vgt) (Max): 1.3V
- Current - Non Rep. Surge 50, 60Hz (Itsm): 380A, 410A
- Current - Gate Trigger (Igt) (Max): 60mA
- Current - Hold (Ih) (Max): 60mA
- Configuration: Single
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268AA
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封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存7,456 |
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IXYS |
THYRISTOR PHASE 1600V ISOPLUS247
- Voltage - Off State: 1600V
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Voltage - On State (Vtm) (Max): 1.64V
- Current - On State (It (AV)) (Max): 48A
- Current - On State (It (RMS)) (Max): 75A
- Current - Hold (Ih) (Max): 100mA
- Current - Off State (Max): 5mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 140°C
- Mounting Type: Through Hole
- Package / Case: ISOPLUS247?
- Supplier Device Package: ISOPLUS247?
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封装: ISOPLUS247? |
库存8,472 |
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IXYS |
RECT BRIDGE 1PH 1200V FO-F-A
- Structure: Bridge, Single Phase - SCRs/Diodes (Layout 1)
- Number of SCRs, Diodes: 2 SCRs, 2 Diodes
- Voltage - Off State: 1200V
- Current - On State (It (AV)) (Max): 36A
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): 1V
- Current - Gate Trigger (Igt) (Max): 65mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 320A, 350A
- Current - Hold (Ih) (Max): 100mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: X118
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封装: X118 |
库存7,744 |
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IXYS |
THYRISTOR MODULE 1200V 2X116A
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1200V
- Current - On State (It (AV)) (Max): 116A
- Current - On State (It (RMS)) (Max): 180A
- Voltage - Gate Trigger (Vgt) (Max): 2.5V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
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封装: TO-240AA |
库存6,144 |
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IXYS |
DIODE SCHOTTKY 100V 10A TO263AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
- Operating Temperature - Junction: -55°C ~ 175°C
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存4,496 |
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IXYS |
DIODE MODULE 1.6KV 950A
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600V
- Current - Average Rectified (Io) (per Diode): 950A
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 18µs
- Current - Reverse Leakage @ Vr: 50mA @ 1600V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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封装: Module |
库存6,448 |
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IXYS |
DIODE ARRAY GP 400V 15A TO220AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io) (per Diode): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.39V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 45ns
- Current - Reverse Leakage @ Vr: 1µA @ 400V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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封装: TO-220-3 |
库存2,720 |
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IXYS |
IC MOSFET DRV LS 14A SGL 5TO-220
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 35 V
- Logic Voltage - VIL, VIH: 0.8V, 3.5V
- Current - Peak Output (Source, Sink): 14A, 14A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 25ns, 22ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-5
- Supplier Device Package: TO-220-5
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封装: TO-220-5 |
库存3,824 |
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IXYS |
MONO SOLAR CELL 42MM X 35MM
- Power (Watts) - Max: 218mW
- Current @ Pmpp: 36mA
- Voltage @ Pmpp: 6.06V
- Current Short Circuit (Isc): 40mA
- Type: Monocrystalline
- Voltage - Open Circuit: 7.56V
- Operating Temperature: -
- Package / Case: Cell (12)
- Size / Dimension: 1.378" L x 1.654" W x 0.079" H (35.00mm x 42.00mm x 2.00mm)
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封装: Cell (12) |
库存8,760 |
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IXYS |
IXRFD631 DE-375/DE-475 DEV BOARD
- Type: MOSFET Driver
- Frequency: -
- For Use With/Related Products: IXRFD631
- Supplied Contents: Board
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封装: - |
库存8,568 |
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IXYS |
DIODE SCHOTT 1.2KV 12.5A ISO247
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 12.5A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
- Capacitance @ Vr, F: 755pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: ISO247
- Operating Temperature - Junction: -40°C ~ 150°C
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封装: - |
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IXYS |
DIODE MODULE GP 2200V 380A Y1-CU
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2200 V
- Current - Average Rectified (Io) (per Diode): 380A
- Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 300 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 2200 V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Y1-CU
- Supplier Device Package: Y1-CU
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封装: - |
Request a Quote |
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IXYS |
3-PH. HALF CONTR. REC.BRIDGE
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1.6 kV
- Current - Average Rectified (Io): 360 A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 360 A
- Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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封装: - |
Request a Quote |
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IXYS |
SCR 1.8KV 3571A WP2
- Voltage - Off State: 1.8 kV
- Voltage - Gate Trigger (Vgt) (Max): 3 V
- Current - Gate Trigger (Igt) (Max): 300 mA
- Voltage - On State (Vtm) (Max): 2.4 V
- Current - On State (It (AV)) (Max): 1806 A
- Current - On State (It (RMS)) (Max): 3571 A
- Current - Hold (Ih) (Max): 1 A
- Current - Off State (Max): 100 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: TO-200AB, B-PuK
- Supplier Device Package: WP2
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封装: - |
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IXYS |
MOSFET N-CH 250V 150A TO247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 780W (Tc)
- Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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封装: - |
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IXYS |
MOSFET N-CH 650V 80A TO247-4L
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 890W (Tc)
- Rds On (Max) @ Id, Vgs: 38mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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封装: - |
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IXYS |
MOSFET N-CH 600V 1.4A TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 9Ohm @ 700mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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封装: - |
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IXYS |
DIODE SCHOTTKY 45V 15A TO252AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 250 µA @ 45 V
- Capacitance @ Vr, F: 227pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
- Operating Temperature - Junction: -55°C ~ 175°C
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封装: - |
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IXYS |
MOSFET N-CH 1000V 52A PLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1250W (Tc)
- Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247™-3
- Package / Case: TO-247-3 Variant
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封装: - |
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IXYS |
SCR MODULE 1.6KV 450A E3 PACK
- Structure: -
- Number of SCRs, Diodes: 3 SCRs, 3 Diodes
- Voltage - Off State: 1.6 kV
- Current - On State (It (AV)) (Max): 450 A
- Current - On State (It (RMS)) (Max): 50 A
- Voltage - Gate Trigger (Vgt) (Max): 1.5 V
- Current - Gate Trigger (Igt) (Max): 150 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 2.4kA, 2.59kA
- Current - Hold (Ih) (Max): 200 mA
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: E3
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封装: - |
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IXYS |
TRIAC 1.4KV 650A Y1-2-CU
- Triac Type: Standard
- Voltage - Off State: 1.4 kV
- Current - On State (It (RMS)) (Max): 650 A
- Voltage - Gate Trigger (Vgt) (Max): 2 V
- Current - Non Rep. Surge 50, 60Hz (Itsm): 9.6kA, 10.4kA
- Current - Gate Trigger (Igt) (Max): 220 mA
- Current - Hold (Ih) (Max): 150 mA
- Configuration: Single
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y1-2-CU
- Supplier Device Package: Y1-2-CU
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封装: - |
Request a Quote |
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