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IXYS |
IGBT 600V 40A 150W TO263
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 40A
- Current - Collector Pulsed (Icm): 100A
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
- Power - Max: 150W
- Switching Energy: 160µJ (on), 120µJ (off)
- Input Type: Standard
- Gate Charge: 24nC
- Td (on/off) @ 25°C: 18ns/73ns
- Test Condition: 400V, 12A, 22 Ohm, 15V
- Reverse Recovery Time (trr): 30ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (IXGA)
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,384 |
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IXYS |
IGBT 600V 70A 200W ISOPLUS247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 70A
- Current - Collector Pulsed (Icm): 150A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
- Power - Max: 200W
- Switching Energy: 2.7mJ (off)
- Input Type: Standard
- Gate Charge: 116nC
- Td (on/off) @ 25°C: 25ns/180ns
- Test Condition: 480V, 40A, 4.7 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: ISOPLUS247?
- Supplier Device Package: ISOPLUS247?
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封装: ISOPLUS247? |
库存5,888 |
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IXYS |
IGBT 600V 75A 540W TO247
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 75A
- Current - Collector Pulsed (Icm): 400A
- Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
- Power - Max: 540W
- Switching Energy: 1.38mJ (on), 3.5mJ (off)
- Input Type: Standard
- Gate Charge: 230nC
- Td (on/off) @ 25°C: 31ns/320ns
- Test Condition: 480V, 50A, 3 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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封装: TO-247-3 |
库存72,000 |
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IXYS |
IGBT 3600V 70A TO-268HV
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 3600V
- Current - Collector (Ic) (Max): 70A
- Current - Collector Pulsed (Icm): 220A
- Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
- Power - Max: 430W
- Switching Energy: 15.5mJ (on), 4.3mJ (off)
- Input Type: Standard
- Gate Charge: 110nC
- Td (on/off) @ 25°C: 18ns/238ns
- Test Condition: 1500V, 20A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 1.7µs
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268
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封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存7,104 |
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IXYS |
MOD IGBT SIXPACK H-BRDG 1200V E2
- IGBT Type: NPT
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 90A
- Power - Max: 350W
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
- Current - Collector Cutoff (Max): 800µA
- Input Capacitance (Cies) @ Vce: 3.8nF @ 25V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
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封装: E2 |
库存2,768 |
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IXYS |
MOD IGBT RBSOA 1200V 330A Y3-DCB
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 330A
- Power - Max: 1380W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 200A
- Current - Collector Cutoff (Max): 13mA
- Input Capacitance (Cies) @ Vce: 13nF @ 25V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y3-DCB
- Supplier Device Package: Y3-DCB
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封装: Y3-DCB |
库存2,880 |
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IXYS |
MOSFET N-CH 150V 88A TO-247AD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Rds On (Max) @ Id, Vgs: 22 mOhm @ 44A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存7,280 |
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IXYS |
MOSFET N-CH 500V 50A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 50A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 25A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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封装: SOT-227-4, miniBLOC |
库存5,840 |
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IXYS |
MOSFET N-CH 500V 24A TO-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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封装: TO-3P-3, SC-65-3 |
库存3,264 |
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IXYS |
MOSFET N-CH 900V 18A TO268
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5230pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 540W (Tc)
- Rds On (Max) @ Id, Vgs: 600 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
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封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存3,216 |
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IXYS |
MOSFET N-CH 300V 80A TO-268
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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封装: - |
库存6,416 |
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IXYS |
MOSFET P-CH 100V 36A TO-247
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Rds On (Max) @ Id, Vgs: 75 mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存6,944 |
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IXYS |
MOSFET N-CH 600V 14A TO-3P
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 550 mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
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封装: TO-3P-3, SC-65-3 |
库存390,000 |
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IXYS |
MOSFET N-CH 1000V 0.1A TO-251
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Vgs(th) (Max) @ Id: 5V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
- Rds On (Max) @ Id, Vgs: 80 Ohm @ 50mA, 0V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存108,000 |
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IXYS |
MOD THYRISTOR 1800V 130A ECOPAC2
- Structure: Single
- Number of SCRs, Diodes: 1 SCR
- Voltage - Off State: 1800V
- Current - On State (It (AV)) (Max): 130A
- Current - On State (It (RMS)) (Max): 200A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 300mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 3600A, 3850A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 130°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC2
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封装: ECO-PAC2 |
库存7,312 |
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IXYS |
MOD THYRISTOR/DIODE 1200V Y2-DCB
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1200V
- Current - On State (It (AV)) (Max): 250A
- Current - On State (It (RMS)) (Max): 400A
- Voltage - Gate Trigger (Vgt) (Max): 2V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 8500A, 9000A
- Current - Hold (Ih) (Max): 150mA
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y2-DCB
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封装: Y2-DCB |
库存7,584 |
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IXYS |
RECT BRIDGE 3PH 110A 1400V PWSE2
- Structure: Bridge, 3-Phase - SCRs/Diodes
- Number of SCRs, Diodes: 3 SCRs, 3 Diodes
- Voltage - Off State: 1400V
- Current - On State (It (AV)) (Max): 110A
- Current - On State (It (RMS)) (Max): 58A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1230A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-E2
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封装: PWS-E2 |
库存3,024 |
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IXYS |
DIODE BRIDGE 1600V 180A
- Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
- Number of SCRs, Diodes: 3 SCRs, 3 Diodes
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): -
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 95mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 700A, 755A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: V2-PAK
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封装: V2-PAK |
库存4,256 |
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IXYS |
DIODE GEN PURP 2.2KV 30A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2200V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.26V @ 30A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40µA @ 2200V
- Capacitance @ Vr, F: 7pF @ 700V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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封装: TO-220-2 |
库存3,840 |
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IXYS |
DIODE GEN PURP 1.6KV 63A TO247AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600V
- Current - Average Rectified (Io): 63A
- Voltage - Forward (Vf) (Max) @ If: 4.1V @ 70A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 300ns
- Current - Reverse Leakage @ Vr: 2mA @ 1600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -40°C ~ 150°C
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封装: TO-247-2 |
库存8,076 |
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IXYS |
DIODE AVALANCHE 1600V 3.6A AXIAL
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 1600V
- Current - Average Rectified (Io): 3.6A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 7A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2mA @ 1600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: Axial
- Operating Temperature - Junction: -40°C ~ 180°C
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封装: Axial |
库存29,574 |
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IXYS |
DIODE GEN PURP 2.2KV 30A TO263
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2200V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.26V @ 30A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40µA @ 2200V
- Capacitance @ Vr, F: 7pF @ 700V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2Pak)
- Operating Temperature - Junction: -55°C ~ 150°C
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存29,568 |
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IXYS |
DIODE MODULE 200V 120A SOT227B
- Diode Configuration: 2 Independent
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io) (per Diode): 120A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 120A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 4mA @ 200V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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封装: SOT-227-4, miniBLOC |
库存3,760 |
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IXYS |
DIODE MODULE 1.2KV 65A TO240AA
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io) (per Diode): 65A
- Voltage - Forward (Vf) (Max) @ If: 1.18V @ 65A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 1200V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
- Supplier Device Package: TO-240AA
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封装: TO-240AA |
库存5,232 |
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IXYS |
DIODE ARRAY SCHOTTKY 45V TO247AD
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io) (per Diode): 30A
- Voltage - Forward (Vf) (Max) @ If: 690mV @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 45V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-3P-3 Full Pack
- Supplier Device Package: TO-247AD
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封装: TO-3P-3 Full Pack |
库存6,072 |
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IXYS |
RECT BRIDGE 3PH 800V PWS-E-1
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800V
- Current - Average Rectified (Io): 175A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A
- Current - Reverse Leakage @ Vr: 200µA @ 800V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-E1
- Supplier Device Package: PWS-E1
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封装: PWS-E1 |
库存5,008 |
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IXYS |
IC DRIVER HALF BRDG 600MA 16-MLP
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10 V ~ 35 V
- Logic Voltage - VIL, VIH: 6V, 7V
- Current - Peak Output (Source, Sink): 600mA, 600mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 650V
- Rise / Fall Time (Typ): 23ns, 22ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-VDFN Exposed Pad
- Supplier Device Package: 16-MLP (7x6)
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封装: 16-VDFN Exposed Pad |
库存5,808 |
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IXYS |
TRIAC 800V 25A TO220
- Triac Type: Standard
- Voltage - Off State: 800 V
- Current - On State (It (RMS)) (Max): 25 A
- Voltage - Gate Trigger (Vgt) (Max): 1.3 V
- Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
- Current - Gate Trigger (Igt) (Max): 35 mA
- Current - Hold (Ih) (Max): 50 mA
- Configuration: Single
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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封装: - |
库存3,000 |
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IXYS |
MOSFET N-CH 300V 210A SOT227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 695W (Tc)
- Rds On (Max) @ Id, Vgs: 4.6mOhm @ 105A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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封装: - |
库存141 |
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IXYS |
DIODE ARRAY GP 800V 11A TO263
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io) (per Diode): 11A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 7 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
- Supplier Device Package: TO-263 (D2PAK)
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封装: - |
库存699 |
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