页 11 - Infineon Technologies 产品 - 晶体管 - UGBT，MOSFET - 单 | 深圳黑森尔电子
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Infineon Technologies 产品 - 晶体管 - UGBT，MOSFET - 单

记录 1,429
页  11/48
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IGW15N120H3FKSA1
Infineon Technologies

IGBT TRENCH FS 1200V 30A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
  • Power - Max: 217 W
  • Switching Energy: 1.55mJ
  • Input Type: Standard
  • Gate Charge: 75 nC
  • Td (on/off) @ 25°C: 21ns/260ns
  • Test Condition: 600V, 15A, 35Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-1
封装: -
库存909
1200 V
30 A
60 A
2.4V @ 15V, 15A
217 W
1.55mJ
Standard
75 nC
21ns/260ns
600V, 15A, 35Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-1
AIKB50N65DF5ATMA1
Infineon Technologies

DISCRETE SWITCHES

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
封装: -
Request a Quote
650 V
50 A
-
-
-
-
Standard
-
-
-
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3-2
SIGC42T60UNX1SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 48ns/350ns
  • Test Condition: 400V, 50A, 6.8Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
50 A
150 A
3.15V @ 15V, 50A
-
-
Standard
-
48ns/350ns
400V, 50A, 6.8Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIGC42T60UNX1SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 48ns/350ns
  • Test Condition: 400V, 50A, 6.8Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
50 A
150 A
3.15V @ 15V, 50A
-
-
Standard
-
48ns/350ns
400V, 50A, 6.8Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIGC81T60SNCX7SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 65ns/450ns
  • Test Condition: 400V, 100A, 3.3Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
100 A
300 A
2.5V @ 15V, 100A
-
-
Standard
-
65ns/450ns
400V, 100A, 3.3Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
AUIRG4PH50S-205
Infineon Technologies

IGBT 1200V TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 141 A
  • Current - Collector Pulsed (Icm): 99 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 33A
  • Power - Max: 543 W
  • Switching Energy: 16mJ (off)
  • Input Type: Standard
  • Gate Charge: 227 nC
  • Td (on/off) @ 25°C: -/616ns
  • Test Condition: 600V, 33A, 5Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封装: -
Request a Quote
1200 V
141 A
99 A
1.7V @ 15V, 33A
543 W
16mJ (off)
Standard
227 nC
-/616ns
600V, 33A, 5Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
SGB15N60
Infineon Technologies

IGBT NPT 600V 31A TO263-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 31 A
  • Current - Collector Pulsed (Icm): 62 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
  • Power - Max: 139 W
  • Switching Energy: 570µJ
  • Input Type: Standard
  • Gate Charge: 76 nC
  • Td (on/off) @ 25°C: 32ns/234ns
  • Test Condition: 400V, 15A, 21Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
封装: -
Request a Quote
600 V
31 A
62 A
2.4V @ 15V, 15A
139 W
570µJ
Standard
76 nC
32ns/234ns
400V, 15A, 21Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3-2
IKQB160N75CP2AKSA1
Infineon Technologies

IGBT 750V 200A TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 750 V
  • Current - Collector (Ic) (Max): 200 A
  • Current - Collector Pulsed (Icm): 480 A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 160A
  • Power - Max: 750 W
  • Switching Energy: 9.7mJ (on), 5.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 610 nC
  • Td (on/off) @ 25°C: 72ns/324ns
  • Test Condition: 450V, 160A, 4.8Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-51
封装: -
库存648
750 V
200 A
480 A
1.65V @ 15V, 160A
750 W
9.7mJ (on), 5.2mJ (off)
Standard
610 nC
72ns/324ns
450V, 160A, 4.8Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-51
SIGC14T60SNCX7SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 31ns/261ns
  • Test Condition: 400V, 15A, 21Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
15 A
45 A
2.5V @ 15V, 15A
-
-
Standard
-
31ns/261ns
400V, 15A, 21Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIGC14T60SNCX7SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 31ns/261ns
  • Test Condition: 400V, 15A, 21Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
15 A
45 A
2.5V @ 15V, 15A
-
-
Standard
-
31ns/261ns
400V, 15A, 21Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IKD06N65ET6ARMA1
Infineon Technologies

IGBT TRENCH FS 650V 9A TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 9 A
  • Current - Collector Pulsed (Icm): 18 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 3A
  • Power - Max: 31 W
  • Switching Energy: 60µJ (on), 30µJ (off)
  • Input Type: Standard
  • Gate Charge: 13.7 nC
  • Td (on/off) @ 25°C: 15ns/35ns
  • Test Condition: 400V, 3A, 47Ohm, 15V
  • Reverse Recovery Time (trr): 30 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封装: -
库存23,274
650 V
9 A
18 A
1.9V @ 15V, 3A
31 W
60µJ (on), 30µJ (off)
Standard
13.7 nC
15ns/35ns
400V, 3A, 47Ohm, 15V
30 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-3
IRGC4275B
Infineon Technologies

IGBT CHIP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 380 nC
  • Td (on/off) @ 25°C: 130ns/280ns
  • Test Condition: 400V, 200A, 5Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
650 V
-
-
1.9V @ 15V, 200A
-
-
Standard
380 nC
130ns/280ns
400V, 200A, 5Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IRGC4274B
Infineon Technologies

IGBT CHIP

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 310 nC
  • Td (on/off) @ 25°C: 95ns/220ns
  • Test Condition: 400V, 150A, 5Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
650 V
-
-
1.9V @ 15V, 150A
-
-
Standard
310 nC
95ns/220ns
400V, 150A, 5Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IKD15N60RBTMA1
Infineon Technologies

IGBT TRENCH 600V 30A TO252-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 250 W
  • Switching Energy: 900µJ
  • Input Type: Standard
  • Gate Charge: 90 nC
  • Td (on/off) @ 25°C: 16ns/183ns
  • Test Condition: 400V, 15A, 15Ohm, 15V
  • Reverse Recovery Time (trr): 110 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3-11
封装: -
Request a Quote
600 V
30 A
45 A
2.1V @ 15V, 15A
250 W
900µJ
Standard
90 nC
16ns/183ns
400V, 15A, 15Ohm, 15V
110 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-3-11
IHW20N140R5LXKSA1
Infineon Technologies

HOME APPLIANCES 14

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1400 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
  • Power - Max: 211 W
  • Switching Energy: -, 70µJ (off)
  • Input Type: Standard
  • Gate Charge: 125 nC
  • Td (on/off) @ 25°C: -/150ns
  • Test Condition: 25V, 20A, 2.2Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-44
封装: -
Request a Quote
1400 V
40 A
60 A
1.9V @ 15V, 20A
211 W
-, 70µJ (off)
Standard
125 nC
-/150ns
25V, 20A, 2.2Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-44
AIGB50N65H5ATMA1
Infineon Technologies

IGBT NPT 650V 50A TO263-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
封装: -
库存8,511
650 V
50 A
-
-
-
-
Standard
-
-
-
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3-2
F5L200R12N3H3BPSA1
Infineon Technologies

F5L200R12 = IGBT MODULE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IGD06N65T6ARMA1
Infineon Technologies

IGBT TRENCH FS 650V 9A TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 9 A
  • Current - Collector Pulsed (Icm): 18 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 3A
  • Power - Max: 31 W
  • Switching Energy: 60µJ (on), 30µJ (off)
  • Input Type: Standard
  • Gate Charge: 13.7 nC
  • Td (on/off) @ 25°C: 15ns/35ns
  • Test Condition: 400V, 3A, 47Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封装: -
Request a Quote
650 V
9 A
18 A
1.9V @ 15V, 3A
31 W
60µJ (on), 30µJ (off)
Standard
13.7 nC
15ns/35ns
400V, 3A, 47Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-3
IKWH40N65WR6XKSA1
Infineon Technologies

IGBT TRENCH 650V 75A TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 40A
  • Power - Max: 175 W
  • Switching Energy: 1.09mJ (on), 570µJ (off)
  • Input Type: Standard
  • Gate Charge: 117 nC
  • Td (on/off) @ 25°C: 37ns/353ns
  • Test Condition: 400V, 40A, 27Ohm, 15V
  • Reverse Recovery Time (trr): 79 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-32
封装: -
库存738
650 V
75 A
120 A
1.85V @ 15V, 40A
175 W
1.09mJ (on), 570µJ (off)
Standard
117 nC
37ns/353ns
400V, 40A, 27Ohm, 15V
79 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-32
IKFW60N60DH3EXKSA1
Infineon Technologies

IGBT 600V 50A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 53 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
  • Power - Max: 141 W
  • Switching Energy: 1.57mJ (on), 720µJ (off)
  • Input Type: Standard
  • Gate Charge: 210 nC
  • Td (on/off) @ 25°C: 23ns/170ns
  • Test Condition: 400V, 50A, 7Ohm, 15V
  • Reverse Recovery Time (trr): 68 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-AI
封装: -
Request a Quote
600 V
53 A
150 A
2.7V @ 15V, 50A
141 W
1.57mJ (on), 720µJ (off)
Standard
210 nC
23ns/170ns
400V, 50A, 7Ohm, 15V
68 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-AI
IRGC30B60KB
Infineon Technologies

IGBT CHIP

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 6A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
30 A
-
1.35V @ 15V, 6A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
IKD15N60RFATMA1
Infineon Technologies

IGBT TRENCH FS 600V 30A TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
  • Power - Max: 250 W
  • Switching Energy: 270µJ (on), 250µJ (off)
  • Input Type: Standard
  • Gate Charge: 90 nC
  • Td (on/off) @ 25°C: 13ns/160ns
  • Test Condition: 400V, 15A, 15Ohm, 15V
  • Reverse Recovery Time (trr): 74 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封装: -
库存16,824
600 V
30 A
45 A
2.5V @ 15V, 15A
250 W
270µJ (on), 250µJ (off)
Standard
90 nC
13ns/160ns
400V, 15A, 15Ohm, 15V
74 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-3
AIKW50N65RF5XKSA1
Infineon Technologies

SIC_DISCRETE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 250 W
  • Switching Energy: 310µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 109 nC
  • Td (on/off) @ 25°C: 20ns/156ns
  • Test Condition: 400V, 25A, 12Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封装: -
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650 V
80 A
150 A
2.1V @ 15V, 50A
250 W
310µJ (on), 120µJ (off)
Standard
109 nC
20ns/156ns
400V, 25A, 12Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IKA10N65ET6XKSA2
Infineon Technologies

IGBT TRENCH FS 650V 15A TO220-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): 42.5 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 8.5A
  • Power - Max: 40 W
  • Switching Energy: 200µJ (on), 70µJ (off)
  • Input Type: Standard
  • Gate Charge: 27 nC
  • Td (on/off) @ 25°C: 30ns/106ns
  • Test Condition: 400V, 8.5A, 47Ohm, 15V
  • Reverse Recovery Time (trr): 51 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: PG-TO220-3-FP
封装: -
库存1,500
650 V
15 A
42.5 A
1.9V @ 15V, 8.5A
40 W
200µJ (on), 70µJ (off)
Standard
27 nC
30ns/106ns
400V, 8.5A, 47Ohm, 15V
51 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack
PG-TO220-3-FP
IHW40N60RFFKSA1
Infineon Technologies

IGBT TRENCH 600V 80A TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 305 W
  • Switching Energy: 560µJ (off)
  • Input Type: Standard
  • Gate Charge: 220 nC
  • Td (on/off) @ 25°C: -/175ns
  • Test Condition: 400V, 40A, 5.6Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-1
封装: -
Request a Quote
600 V
80 A
120 A
2.4V @ 15V, 40A
305 W
560µJ (off)
Standard
220 nC
-/175ns
400V, 40A, 5.6Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-1
SIGC109T120R3LEX1SA2
Infineon Technologies

IGBT 1200V 100A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
1200 V
-
300 A
2.1V @ 15V, 100A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
IKQ100N120CS7XKSA1
Infineon Technologies

IGBT TRENCH FS 1200V 188A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 188 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
  • Power - Max: 824 W
  • Switching Energy: 6.87mJ (on), 4.71mJ (off)
  • Input Type: Standard
  • Gate Charge: 610 nC
  • Td (on/off) @ 25°C: 38ns/200ns
  • Test Condition: -
  • Reverse Recovery Time (trr): 203 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-55
封装: -
库存705
1200 V
188 A
300 A
2V @ 15V, 100A
824 W
6.87mJ (on), 4.71mJ (off)
Standard
610 nC
38ns/200ns
-
203 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-55
IGC06T60TEX7SA2
Infineon Technologies

IGBT 600V 6A WAFER

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRG7S313UTRLPBF
Infineon Technologies

IGBT PDP 330V 40A D2PAK

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 330 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 60A
  • Power - Max: 78 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 33 nC
  • Td (on/off) @ 25°C: 1ns/65ns
  • Test Condition: 196V, 12A, 10Ohm
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: -
Request a Quote
330 V
40 A
-
2.14V @ 15V, 60A
78 W
-
Standard
33 nC
1ns/65ns
196V, 12A, 10Ohm
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK
SIGC121T60NR2CX1SA3
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 150 A
  • Current - Collector Pulsed (Icm): 450 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 125ns/225ns
  • Test Condition: 300V, 150A, 1.5Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
150 A
450 A
2.5V @ 15V, 150A
-
-
Standard
-
125ns/225ns
300V, 150A, 1.5Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die