页 10 - Infineon Technologies 产品 - 晶体管 - UGBT，MOSFET - 单

SIGC121T60NR2CX1SA2

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 150 A
Current - Collector Pulsed (Icm): 450 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 125ns/225ns
Test Condition: 300V, 150A, 1.5Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: -

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600 V

150 A

450 A

2.5V @ 15V, 150A

-

Standard

-

125ns/225ns

300V, 150A, 1.5Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

IRGC75B60UB

Infineon Technologies

IGBT CHIP

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 75A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: -

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600 V

75 A

-

2.9V @ 15V, 75A

-

Standard

-

Surface Mount

Die

IRGC75B60KB

Infineon Technologies

IGBT CHIP

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: -

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600 V

75 A

-

2.1V @ 15V, 75A

-

Standard

-

Surface Mount

Die

SIGC42T60UNX7SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 150 A
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 48ns/350ns
Test Condition: 400V, 50A, 6.8Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: -

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600 V

50 A

150 A

3.15V @ 15V, 50A

-

Standard

-

48ns/350ns

400V, 50A, 6.8Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

SIGC42T60UNX7SA2

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 150 A
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 48ns/350ns
Test Condition: 400V, 50A, 6.8Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: -

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600 V

50 A

150 A

3.15V @ 15V, 50A

-

Standard

-

48ns/350ns

400V, 50A, 6.8Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

IKB20N65EH5ATMA1

Infineon Technologies

IGBT TRENCH FS 650V 38A TO263-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 38 A
Current - Collector Pulsed (Icm): 60 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Power - Max: 125 W
Switching Energy: 560µJ (on), 130µJ (off)
Input Type: Standard
Gate Charge: 48 nC
Td (on/off) @ 25°C: 19ns/160ns
Test Condition: 400V, 20A, 32Ohm, 15V
Reverse Recovery Time (trr): 80 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3

封装: -

库存2,550

650 V

38 A

60 A

2.1V @ 15V, 20A

125 W

560µJ (on), 130µJ (off)

Standard

48 nC

19ns/160ns

400V, 20A, 32Ohm, 15V

80 ns

-40°C ~ 175°C (TJ)

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

PG-TO263-3

IKY50N120CH7XKSA1

Infineon Technologies

IGBT TRENCH FS 1200V 75A TO247-4

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Current - Collector Pulsed (Icm): 200 A
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Power - Max: 398 W
Switching Energy: 1.09mJ (on), 1.33mJ (off)
Input Type: Standard
Gate Charge: 372 nC
Td (on/off) @ 25°C: 35ns/331ns
Test Condition: -
Reverse Recovery Time (trr): 86 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Supplier Device Package: PG-TO247-4-U10

封装: -

库存609

1200 V

75 A

200 A

2.15V @ 15V, 50A

398 W

1.09mJ (on), 1.33mJ (off)

Standard

372 nC

35ns/331ns

-

86 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-4

PG-TO247-4-U10

IGC70T120T8RQX1SA1

Infineon Technologies

IGBT CHIP

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Current - Collector Pulsed (Icm): 225 A
Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 75A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: -

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1200 V

75 A

225 A

2.42V @ 15V, 75A

-

Standard

-

-40°C ~ 175°C (TJ)

Surface Mount

Die

IKWH40N65EH7XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 160 A
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 40A
Power - Max: 208 W
Switching Energy: 0.97mJ (on), 0.42mJ (off)
Input Type: Standard
Gate Charge: 81 nC
Td (on/off) @ 25°C: 18ns/141ns
Test Condition: 400V, 40A, 12.5Ohm, 15V
Reverse Recovery Time (trr): 74 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-32

封装: -

库存627

650 V

80 A

160 A

1.65V @ 15V, 40A

208 W

0.97mJ (on), 0.42mJ (off)

Standard

81 nC

18ns/141ns

400V, 40A, 12.5Ohm, 15V

74 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3-32

SIGC07T60NCX7SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 6 A
Current - Collector Pulsed (Icm): 18 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 6A, 54Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: -

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600 V

6 A

18 A

2.5V @ 15V, 6A

-

Standard

-

21ns/110ns

300V, 6A, 54Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

SIGC14T60NCX1SA3

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Current - Collector Pulsed (Icm): 45 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 15A, 18Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: -

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600 V

15 A

45 A

2.5V @ 15V, 15A

-

Standard

-

21ns/110ns

300V, 15A, 18Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

SIGC14T60NCX1SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Current - Collector Pulsed (Icm): 45 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 15A, 18Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: -

Request a Quote

600 V

15 A

45 A

2.5V @ 15V, 15A

-

Standard

-

21ns/110ns

300V, 15A, 18Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

SIGC14T60NCX1SA2

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Current - Collector Pulsed (Icm): 45 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 15A, 18Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: -

Request a Quote

600 V

15 A

45 A

2.5V @ 15V, 15A

-

Standard

-

21ns/110ns

300V, 15A, 18Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

SIGC14T60NCX1SA7

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Current - Collector Pulsed (Icm): 45 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 15A, 18Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: -

Request a Quote

600 V

15 A

45 A

2.5V @ 15V, 15A

-

Standard

-

21ns/110ns

300V, 15A, 18Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

SIGC14T60NCX1SA6

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 15 A
Current - Collector Pulsed (Icm): 45 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 21ns/110ns
Test Condition: 300V, 15A, 18Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: -

Request a Quote

600 V

15 A

45 A

2.5V @ 15V, 15A

-

Standard

-

21ns/110ns

300V, 15A, 18Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

IKWH75N65EH7XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 300 A
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A
Power - Max: 341 W
Switching Energy: 2.42mJ (on), 1.4mJ (off)
Input Type: Standard
Gate Charge: 150 nC
Td (on/off) @ 25°C: 25ns/45ns
Test Condition: 400V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr): 89 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-32

封装: -

库存642

650 V

80 A

300 A

1.65V @ 15V, 75A

341 W

2.42mJ (on), 1.4mJ (off)

Standard

150 nC

25ns/45ns

400V, 75A, 10Ohm, 15V

89 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3-32

AIMDQ75R060M1HXUMA1

Infineon Technologies

AUTOMOTIVE_SICMOS

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): -
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: -
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

AIGB40N65F5ATMA1

Infineon Technologies

DISCRETE SWITCHES

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 40 A
Current - Collector Pulsed (Icm): -
Vce(on) (Max) @ Vge, Ic: -
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2

封装: -

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650 V

40 A

-

Standard

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

PG-TO263-3-2

SIGC84T120R3LEX1SA7

Infineon Technologies

IGBT 1200V 75A DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 225 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

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1200 V

-

225 A

2.1V @ 15V, 75A

-

Standard

-

IHW30N160R2FKSA1

Infineon Technologies

IGBT 1600V 60A 312W TO247-3

IGBT Type: NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1600 V
Current - Collector (Ic) (Max): 60 A
Current - Collector Pulsed (Icm): 90 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Power - Max: 312 W
Switching Energy: 4.37mJ
Input Type: Standard
Gate Charge: 94 nC
Td (on/off) @ 25°C: -/525ns
Test Condition: 600V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-1

封装: -

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1600 V

60 A

90 A

2.1V @ 15V, 30A

312 W

4.37mJ

Standard

94 nC

-/525ns

600V, 30A, 10Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3-1

IGC70T120T8RQ

Infineon Technologies

IGBT 1200V 75A DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 225 A
Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 75A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: -

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1200 V

-

225 A

2.42V @ 15V, 75A

-

Standard

-

Surface Mount

Die

IGC70T120T8RL

Infineon Technologies

IGBT 1200V 75A DIE

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 225 A
Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 75A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: -

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1200 V

-

225 A

2.07V @ 15V, 75A

-

Standard

-

Surface Mount

Die

SIGC19T60SEX1SA1

Infineon Technologies

IGBT 3 CHIP 600V

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 1.97V @ 15V, 40A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: -

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600 V

40 A

120 A

1.97V @ 15V, 40A

-

Standard

-

-40°C ~ 175°C (TJ)

Surface Mount

Die

IGC07T120T8LX1SA2

Infineon Technologies

IGBT 1200V 4A SAWN ON FOIL

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 12 A
Vce(on) (Max) @ Vge, Ic: 2.02V @ 15V, 4A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: -
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: -

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1200 V

-

12 A

2.02V @ 15V, 4A

-

Standard

-

-40°C ~ 175°C (TJ)

Surface Mount

Die

SIGC42T60SNCX1SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 150 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 57ns/380ns
Test Condition: 400V, 50A, 6.8Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: -

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600 V

50 A

150 A

2.5V @ 15V, 50A

-

Standard

-

57ns/380ns

400V, 50A, 6.8Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

SIGC42T60SNCX1SA2

Infineon Technologies

IGBT 3 CHIP 600V WAFER

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Current - Collector Pulsed (Icm): 150 A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Power - Max: -
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 57ns/380ns
Test Condition: 400V, 50A, 6.8Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: -

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600 V

50 A

150 A

2.5V @ 15V, 50A

-

Standard

-

57ns/380ns

400V, 50A, 6.8Ohm, 15V

-

-55°C ~ 150°C (TJ)

Surface Mount

Die

IRGB15B60KDPBF-INF

Infineon Technologies

IGBT, 31A I(C), 600V V(BR)CES, N

IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 31 A
Current - Collector Pulsed (Icm): 62 A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Power - Max: 208 W
Switching Energy: 220µJ (on), 340µJ (off)
Input Type: Standard
Gate Charge: 84 nC
Td (on/off) @ 25°C: 34ns/184ns
Test Condition: 400V, 15A, 22Ohm, 15V
Reverse Recovery Time (trr): 92 ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

封装: -

Request a Quote

600 V

31 A

62 A

2.2V @ 15V, 15A

208 W

220µJ (on), 340µJ (off)

Standard

84 nC

34ns/184ns

400V, 15A, 22Ohm, 15V

92 ns

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

TO-220AB

IKFW50N60DH3EXKSA1

Infineon Technologies

IGBT TRENCH FS 600V 40A TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Current - Collector Pulsed (Icm): 120 A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Power - Max: 130 W
Switching Energy: 1.28mJ (on), 560µJ (off)
Input Type: Standard
Gate Charge: 160 nC
Td (on/off) @ 25°C: 21ns/174ns
Test Condition: 400V, 40A, 8Ohm, 15V
Reverse Recovery Time (trr): 64 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-AI

封装: -

库存465

600 V

40 A

120 A

2.7V @ 15V, 40A

130 W

1.28mJ (on), 560µJ (off)

Standard

160 nC

21ns/174ns

400V, 40A, 8Ohm, 15V

64 ns

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3-AI

IKWH50N65WR6XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 85A TO247-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 85 A
Current - Collector Pulsed (Icm): 150 A
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
Power - Max: 205 W
Switching Energy: 1.5mJ (on), 730µJ (off)
Input Type: Standard
Gate Charge: 144 nC
Td (on/off) @ 25°C: 40ns/351ns
Test Condition: 400V, 50A, 22Ohm, 15V
Reverse Recovery Time (trr): -
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-32

封装: -

库存1,434

650 V

85 A

150 A

1.85V @ 15V, 50A

205 W

1.5mJ (on), 730µJ (off)

Standard

144 nC

40ns/351ns

400V, 50A, 22Ohm, 15V

-

-40°C ~ 175°C (TJ)

Through Hole

TO-247-3

PG-TO247-3-32

IKD08N65ET6ARMA1

Infineon Technologies

IGBT TRENCH FS 650V 15A TO252-3

IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 15 A
Current - Collector Pulsed (Icm): 25 A
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 5A
Power - Max: 47 W
Switching Energy: 110µJ (on), 40µJ (off)
Input Type: Standard
Gate Charge: 17 nC
Td (on/off) @ 25°C: 20ns/59ns
Test Condition: 400V, 5A, 47Ohm, 15V
Reverse Recovery Time (trr): 43 ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-3

封装: -

库存8,982

650 V

15 A

25 A

1.9V @ 15V, 5A

47 W

110µJ (on), 40µJ (off)

Standard

17 nC

20ns/59ns

400V, 5A, 47Ohm, 15V

43 ns

-40°C ~ 175°C (TJ)

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

PG-TO252-3

零件编号	制造商	描述	封装	库存	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SIGC121T60NR2CX1SA2	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 150 A Current - Collector Pulsed (Icm): 450 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 125ns/225ns Test Condition: 300V, 150A, 1.5Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: -	Request a Quote	600 V	150 A	450 A	2.5V @ 15V, 150A	-	-	Standard	-	125ns/225ns	300V, 150A, 1.5Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
IRGC75B60UB	Infineon Technologies	IGBT CHIP IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 75 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 75A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: -	Request a Quote	600 V	75 A	-	2.9V @ 15V, 75A	-	-	Standard	-	-	-	-	-	Surface Mount	Die	Die
IRGC75B60KB	Infineon Technologies	IGBT CHIP IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 75 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: -	Request a Quote	600 V	75 A	-	2.1V @ 15V, 75A	-	-	Standard	-	-	-	-	-	Surface Mount	Die	Die
SIGC42T60UNX7SA1	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 48ns/350ns Test Condition: 400V, 50A, 6.8Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: -	Request a Quote	600 V	50 A	150 A	3.15V @ 15V, 50A	-	-	Standard	-	48ns/350ns	400V, 50A, 6.8Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SIGC42T60UNX7SA2	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 48ns/350ns Test Condition: 400V, 50A, 6.8Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: -	Request a Quote	600 V	50 A	150 A	3.15V @ 15V, 50A	-	-	Standard	-	48ns/350ns	400V, 50A, 6.8Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
IKB20N65EH5ATMA1	Infineon Technologies	IGBT TRENCH FS 650V 38A TO263-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 38 A Current - Collector Pulsed (Icm): 60 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Power - Max: 125 W Switching Energy: 560µJ (on), 130µJ (off) Input Type: Standard Gate Charge: 48 nC Td (on/off) @ 25°C: 19ns/160ns Test Condition: 400V, 20A, 32Ohm, 15V Reverse Recovery Time (trr): 80 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3	封装: -	库存2,550	650 V	38 A	60 A	2.1V @ 15V, 20A	125 W	560µJ (on), 130µJ (off)	Standard	48 nC	19ns/160ns	400V, 20A, 32Ohm, 15V	80 ns	-40°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	PG-TO263-3
IKY50N120CH7XKSA1	Infineon Technologies	IGBT TRENCH FS 1200V 75A TO247-4 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 75 A Current - Collector Pulsed (Icm): 200 A Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A Power - Max: 398 W Switching Energy: 1.09mJ (on), 1.33mJ (off) Input Type: Standard Gate Charge: 372 nC Td (on/off) @ 25°C: 35ns/331ns Test Condition: - Reverse Recovery Time (trr): 86 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Supplier Device Package: PG-TO247-4-U10	封装: -	库存609	1200 V	75 A	200 A	2.15V @ 15V, 50A	398 W	1.09mJ (on), 1.33mJ (off)	Standard	372 nC	35ns/331ns	-	86 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-4	PG-TO247-4-U10
IGC70T120T8RQX1SA1	Infineon Technologies	IGBT CHIP IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 75 A Current - Collector Pulsed (Icm): 225 A Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 75A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: -	Request a Quote	1200 V	75 A	225 A	2.42V @ 15V, 75A	-	-	Standard	-	-	-	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
IKWH40N65EH7XKSA1	Infineon Technologies	IGBT TRENCH FS 650V 80A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 160 A Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 40A Power - Max: 208 W Switching Energy: 0.97mJ (on), 0.42mJ (off) Input Type: Standard Gate Charge: 81 nC Td (on/off) @ 25°C: 18ns/141ns Test Condition: 400V, 40A, 12.5Ohm, 15V Reverse Recovery Time (trr): 74 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-32	封装: -	库存627	650 V	80 A	160 A	1.65V @ 15V, 40A	208 W	0.97mJ (on), 0.42mJ (off)	Standard	81 nC	18ns/141ns	400V, 40A, 12.5Ohm, 15V	74 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-32
SIGC07T60NCX7SA1	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 6 A Current - Collector Pulsed (Icm): 18 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 21ns/110ns Test Condition: 300V, 6A, 54Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: -	Request a Quote	600 V	6 A	18 A	2.5V @ 15V, 6A	-	-	Standard	-	21ns/110ns	300V, 6A, 54Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SIGC14T60NCX1SA3	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 15 A Current - Collector Pulsed (Icm): 45 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 21ns/110ns Test Condition: 300V, 15A, 18Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: -	Request a Quote	600 V	15 A	45 A	2.5V @ 15V, 15A	-	-	Standard	-	21ns/110ns	300V, 15A, 18Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SIGC14T60NCX1SA1	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 15 A Current - Collector Pulsed (Icm): 45 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 21ns/110ns Test Condition: 300V, 15A, 18Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: -	Request a Quote	600 V	15 A	45 A	2.5V @ 15V, 15A	-	-	Standard	-	21ns/110ns	300V, 15A, 18Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SIGC14T60NCX1SA2	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 15 A Current - Collector Pulsed (Icm): 45 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 21ns/110ns Test Condition: 300V, 15A, 18Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: -	Request a Quote	600 V	15 A	45 A	2.5V @ 15V, 15A	-	-	Standard	-	21ns/110ns	300V, 15A, 18Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SIGC14T60NCX1SA7	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 15 A Current - Collector Pulsed (Icm): 45 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 21ns/110ns Test Condition: 300V, 15A, 18Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: -	Request a Quote	600 V	15 A	45 A	2.5V @ 15V, 15A	-	-	Standard	-	21ns/110ns	300V, 15A, 18Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SIGC14T60NCX1SA6	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 15 A Current - Collector Pulsed (Icm): 45 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 21ns/110ns Test Condition: 300V, 15A, 18Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: -	Request a Quote	600 V	15 A	45 A	2.5V @ 15V, 15A	-	-	Standard	-	21ns/110ns	300V, 15A, 18Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
IKWH75N65EH7XKSA1	Infineon Technologies	IGBT TRENCH FS 650V 80A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 80 A Current - Collector Pulsed (Icm): 300 A Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A Power - Max: 341 W Switching Energy: 2.42mJ (on), 1.4mJ (off) Input Type: Standard Gate Charge: 150 nC Td (on/off) @ 25°C: 25ns/45ns Test Condition: 400V, 75A, 10Ohm, 15V Reverse Recovery Time (trr): 89 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-32	封装: -	库存642	650 V	80 A	300 A	1.65V @ 15V, 75A	341 W	2.42mJ (on), 1.4mJ (off)	Standard	150 nC	25ns/45ns	400V, 75A, 10Ohm, 15V	89 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-32
AIMDQ75R060M1HXUMA1	Infineon Technologies	AUTOMOTIVE_SICMOS IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AIGB40N65F5ATMA1	Infineon Technologies	DISCRETE SWITCHES IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 40 A Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2	封装: -	Request a Quote	650 V	40 A	-	-	-	-	Standard	-	-	-	-	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	PG-TO263-3-2
SIGC84T120R3LEX1SA7	Infineon Technologies	IGBT 1200V 75A DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 225 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	1200 V	-	225 A	2.1V @ 15V, 75A	-	-	Standard	-	-	-	-	-	-	-	-
IHW30N160R2FKSA1	Infineon Technologies	IGBT 1600V 60A 312W TO247-3 IGBT Type: NPT, Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1600 V Current - Collector (Ic) (Max): 60 A Current - Collector Pulsed (Icm): 90 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Power - Max: 312 W Switching Energy: 4.37mJ Input Type: Standard Gate Charge: 94 nC Td (on/off) @ 25°C: -/525ns Test Condition: 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-1	封装: -	Request a Quote	1600 V	60 A	90 A	2.1V @ 15V, 30A	312 W	4.37mJ	Standard	94 nC	-/525ns	600V, 30A, 10Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-1
IGC70T120T8RQ	Infineon Technologies	IGBT 1200V 75A DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 225 A Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 75A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: -	Request a Quote	1200 V	-	225 A	2.42V @ 15V, 75A	-	-	Standard	-	-	-	-	-	Surface Mount	Die	Die
IGC70T120T8RL	Infineon Technologies	IGBT 1200V 75A DIE IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 225 A Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 75A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: -	Request a Quote	1200 V	-	225 A	2.07V @ 15V, 75A	-	-	Standard	-	-	-	-	-	Surface Mount	Die	Die
SIGC19T60SEX1SA1	Infineon Technologies	IGBT 3 CHIP 600V IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 40 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 1.97V @ 15V, 40A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: -	Request a Quote	600 V	40 A	120 A	1.97V @ 15V, 40A	-	-	Standard	-	-	-	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
IGC07T120T8LX1SA2	Infineon Technologies	IGBT 1200V 4A SAWN ON FOIL IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 12 A Vce(on) (Max) @ Vge, Ic: 2.02V @ 15V, 4A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: -	Request a Quote	1200 V	-	12 A	2.02V @ 15V, 4A	-	-	Standard	-	-	-	-	-40°C ~ 175°C (TJ)	Surface Mount	Die	Die
SIGC42T60SNCX1SA1	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 57ns/380ns Test Condition: 400V, 50A, 6.8Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: -	Request a Quote	600 V	50 A	150 A	2.5V @ 15V, 50A	-	-	Standard	-	57ns/380ns	400V, 50A, 6.8Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
SIGC42T60SNCX1SA2	Infineon Technologies	IGBT 3 CHIP 600V WAFER IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 50 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Power - Max: - Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 57ns/380ns Test Condition: 400V, 50A, 6.8Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: -	Request a Quote	600 V	50 A	150 A	2.5V @ 15V, 50A	-	-	Standard	-	57ns/380ns	400V, 50A, 6.8Ohm, 15V	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
IRGB15B60KDPBF-INF	Infineon Technologies	IGBT, 31A I(C), 600V V(BR)CES, N IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 31 A Current - Collector Pulsed (Icm): 62 A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A Power - Max: 208 W Switching Energy: 220µJ (on), 340µJ (off) Input Type: Standard Gate Charge: 84 nC Td (on/off) @ 25°C: 34ns/184ns Test Condition: 400V, 15A, 22Ohm, 15V Reverse Recovery Time (trr): 92 ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	封装: -	Request a Quote	600 V	31 A	62 A	2.2V @ 15V, 15A	208 W	220µJ (on), 340µJ (off)	Standard	84 nC	34ns/184ns	400V, 15A, 22Ohm, 15V	92 ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB
IKFW50N60DH3EXKSA1	Infineon Technologies	IGBT TRENCH FS 600V 40A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 40 A Current - Collector Pulsed (Icm): 120 A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A Power - Max: 130 W Switching Energy: 1.28mJ (on), 560µJ (off) Input Type: Standard Gate Charge: 160 nC Td (on/off) @ 25°C: 21ns/174ns Test Condition: 400V, 40A, 8Ohm, 15V Reverse Recovery Time (trr): 64 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-AI	封装: -	库存465	600 V	40 A	120 A	2.7V @ 15V, 40A	130 W	1.28mJ (on), 560µJ (off)	Standard	160 nC	21ns/174ns	400V, 40A, 8Ohm, 15V	64 ns	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-AI
IKWH50N65WR6XKSA1	Infineon Technologies	IGBT TRENCH FS 650V 85A TO247-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 85 A Current - Collector Pulsed (Icm): 150 A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A Power - Max: 205 W Switching Energy: 1.5mJ (on), 730µJ (off) Input Type: Standard Gate Charge: 144 nC Td (on/off) @ 25°C: 40ns/351ns Test Condition: 400V, 50A, 22Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-32	封装: -	库存1,434	650 V	85 A	150 A	1.85V @ 15V, 50A	205 W	1.5mJ (on), 730µJ (off)	Standard	144 nC	40ns/351ns	400V, 50A, 22Ohm, 15V	-	-40°C ~ 175°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-32
IKD08N65ET6ARMA1	Infineon Technologies	IGBT TRENCH FS 650V 15A TO252-3 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 15 A Current - Collector Pulsed (Icm): 25 A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 5A Power - Max: 47 W Switching Energy: 110µJ (on), 40µJ (off) Input Type: Standard Gate Charge: 17 nC Td (on/off) @ 25°C: 20ns/59ns Test Condition: 400V, 5A, 47Ohm, 15V Reverse Recovery Time (trr): 43 ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-3	封装: -	库存8,982	650 V	15 A	25 A	1.9V @ 15V, 5A	47 W	110µJ (on), 40µJ (off)	Standard	17 nC	20ns/59ns	400V, 5A, 47Ohm, 15V	43 ns	-40°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	PG-TO252-3