Infineon Technologies 产品 - 晶体管 - UGBT，MOSFET - 单 | 深圳黑森尔电子
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Infineon Technologies 产品 - 晶体管 - UGBT，MOSFET - 单

记录 1,429
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Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SIGC18T60NCX1SA4
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 20A, 13Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
20 A
60 A
2.5V @ 15V, 20A
-
-
Standard
-
21ns/110ns
300V, 20A, 13Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IGC39T65QEX1SA1
Infineon Technologies

IGBT TRENCH FS 650V 75A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 75A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
650 V
75 A
225 A
2.22V @ 15V, 75A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IKP20N60H3XKSA1
Infineon Technologies

IGBT 600V 40A 170W TO220-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 40 A
  • Current - Collector Pulsed (Icm): 80 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
  • Power - Max: 170 W
  • Switching Energy: 690µJ
  • Input Type: Standard
  • Gate Charge: 120 nC
  • Td (on/off) @ 25°C: 16ns/194ns
  • Test Condition: 400V, 20A, 14.6Ohm, 15V
  • Reverse Recovery Time (trr): 112 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
封装: -
Request a Quote
600 V
40 A
80 A
2.4V @ 15V, 20A
170 W
690µJ
Standard
120 nC
16ns/194ns
400V, 20A, 14.6Ohm, 15V
112 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
IQFH99N06NM5ATMA1
Infineon Technologies

TRENCH 40<-<100V

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IGD10N65T6ARMA1
Infineon Technologies

IGBT TRENCH FS 650V 23A TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 23 A
  • Current - Collector Pulsed (Icm): 42.5 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 8.5A
  • Power - Max: 75 W
  • Switching Energy: 200µJ (on), 70µJ (off)
  • Input Type: Standard
  • Gate Charge: 27 nC
  • Td (on/off) @ 25°C: 30ns/106ns
  • Test Condition: 400V, 8.5A, 47Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封装: -
库存8,970
650 V
23 A
42.5 A
1.9V @ 15V, 8.5A
75 W
200µJ (on), 70µJ (off)
Standard
27 nC
30ns/106ns
400V, 8.5A, 47Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-3
IRF7805ZTRPBFXTMA1
Infineon Technologies

TRENCH <= 40V

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRGSL15B60KDPBF-INF
Infineon Technologies

IGBT W/ULTRAFAST SOFT RECOVERY D

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 31 A
  • Current - Collector Pulsed (Icm): 62 A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
  • Power - Max: 208 W
  • Switching Energy: 220µJ (on), 340µJ (off)
  • Input Type: Standard
  • Gate Charge: 56 nC
  • Td (on/off) @ 25°C: 34ns/184ns
  • Test Condition: 400V, 15A, 22Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
  • Supplier Device Package: TO-262
封装: -
Request a Quote
600 V
31 A
62 A
2.2V @ 15V, 15A
208 W
220µJ (on), 340µJ (off)
Standard
56 nC
34ns/184ns
400V, 15A, 22Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-262-3 Long Leads, I2PAK, TO-262AA
TO-262
IRGS4B60KPBF
Infineon Technologies

IGBT 600V D2PAK-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 12 A
  • Current - Collector Pulsed (Icm): 24 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
  • Power - Max: 63 W
  • Switching Energy: 73µJ (on), 47µJ (off)
  • Input Type: Standard
  • Gate Charge: 12 nC
  • Td (on/off) @ 25°C: 22ns/100ns
  • Test Condition: 400V, 4A, 100Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: -
Request a Quote
600 V
12 A
24 A
2.5V @ 15V, 4A
63 W
73µJ (on), 47µJ (off)
Standard
12 nC
22ns/100ns
400V, 4A, 100Ohm, 15V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK
IKQ75N120CS7XKSA1
Infineon Technologies

IGBT TRENCH 1200V 154A TO247-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 154 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
  • Power - Max: 630 W
  • Switching Energy: 5.13mJ (on), 3.48mJ (off)
  • Input Type: Standard
  • Gate Charge: 450 nC
  • Td (on/off) @ 25°C: 38ns/190ns
  • Test Condition: 600V, 75A, 2.1Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-46
封装: -
库存288
1200 V
154 A
225 A
2V @ 15V, 75A
630 W
5.13mJ (on), 3.48mJ (off)
Standard
450 nC
38ns/190ns
600V, 75A, 2.1Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-46
SIGC15T60EX1SA1
Infineon Technologies

IGBT TRENCH FS 600V 30A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
30 A
90 A
1.9V @ 15V, 30A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
SIGC15T60EX1SA4
Infineon Technologies

IGBT TRENCH FS 600V 30A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
30 A
90 A
1.9V @ 15V, 30A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IGC10T65U8QX1SA1
Infineon Technologies

IGBT CHIP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRG4BC20SPBFXKMA1
Infineon Technologies

IGBT 600V 19A 60W TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 19 A
  • Current - Collector Pulsed (Icm): 38 A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A
  • Power - Max: 60 W
  • Switching Energy: 120µJ (on), 2.05mJ (off)
  • Input Type: Standard
  • Gate Charge: 27 nC
  • Td (on/off) @ 25°C: 27ns/540ns
  • Test Condition: 480V, 10A, 50Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: -
Request a Quote
600 V
19 A
38 A
1.6V @ 15V, 10A
60 W
120µJ (on), 2.05mJ (off)
Standard
27 nC
27ns/540ns
480V, 10A, 50Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
SIGC100T60R3EX7SA1
Infineon Technologies

IGBT TRENCH FS 600V 200A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 200 A
  • Current - Collector Pulsed (Icm): 600 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
200 A
600 A
1.9V @ 15V, 200A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IKFW50N60ETXKSA1
Infineon Technologies

IGBT TRENCH FS 600V 73A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 73 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
  • Power - Max: 164 W
  • Switching Energy: 1.5mJ (on), 1.42mJ (off)
  • Input Type: Standard
  • Gate Charge: 290 nC
  • Td (on/off) @ 25°C: 28ns/305ns
  • Test Condition: 400V, 50A, 7Ohm, 15V
  • Reverse Recovery Time (trr): 91 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-AI
封装: -
库存720
600 V
73 A
150 A
2V @ 15V, 50A
164 W
1.5mJ (on), 1.42mJ (off)
Standard
290 nC
28ns/305ns
400V, 50A, 7Ohm, 15V
91 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-AI
SIGC28T65EX1SA1
Infineon Technologies

IGBT 3 CHIP 600V

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
650 V
50 A
150 A
1.77V @ 15V, 50A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
AIKB15N65DH5ATMA1
Infineon Technologies

DISCRETE SWITCHES

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 15 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
封装: -
库存6,000
650 V
15 A
-
-
-
-
Standard
-
-
-
-
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3-2
IKQ120N120CH7XKSA1
Infineon Technologies

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存333
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IHW30N135R5XKSA1
Infineon Technologies

IGBT TRENCH FS 1350V 60A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1350 V
  • Current - Collector (Ic) (Max): 60 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 30A
  • Power - Max: 330 W
  • Switching Energy: 1.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 235 nC
  • Td (on/off) @ 25°C: -/310ns
  • Test Condition: 600V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封装: -
库存585
1350 V
60 A
90 A
1.95V @ 15V, 30A
330 W
1.4mJ (off)
Standard
235 nC
-/310ns
600V, 30A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
SIGC28T60EX1SA4
Infineon Technologies

IGBT TRENCH FS 600V 50A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
50 A
150 A
1.85V @ 15V, 50A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
SIGC28T60EX1SA3
Infineon Technologies

IGBT TRENCH FS 600V 50A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
50 A
150 A
1.85V @ 15V, 50A
-
-
Standard
-
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Die
IRGC25B120UB
Infineon Technologies

IGBT CHIP

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 25 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
1200 V
25 A
-
2.7V @ 15V, 10A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
SIGC109T120R3
Infineon Technologies

INSULATED GATE BIPOLAR TRANSISTO

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
1200 V
-
300 A
2.1V @ 15V, 100A
-
-
Standard
-
-
-
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
IGW25T120FKSA1
Infineon Technologies

IGBT NPT FS 1200V 50A TO247-3

  • IGBT Type: NPT, Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 75 A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
  • Power - Max: 190 W
  • Switching Energy: 4.2mJ
  • Input Type: Standard
  • Gate Charge: 155 nC
  • Td (on/off) @ 25°C: 50ns/560ns
  • Test Condition: 600V, 25A, 22Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-1
封装: -
库存11,889
1200 V
50 A
75 A
2.2V @ 15V, 25A
190 W
4.2mJ
Standard
155 nC
50ns/560ns
600V, 25A, 22Ohm, 15V
-
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-1
IKB15N65EH5ATMA1
Infineon Technologies

IGBT TRENCH FS 650V 30A TO263-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 30 A
  • Current - Collector Pulsed (Icm): 45 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 105 W
  • Switching Energy: 400µJ (on), 80µJ (off)
  • Input Type: Standard
  • Gate Charge: 38 nC
  • Td (on/off) @ 25°C: 16ns/145ns
  • Test Condition: 400V, 15A, 39Ohm, 15V
  • Reverse Recovery Time (trr): 70 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
封装: -
库存2,748
650 V
30 A
45 A
2.1V @ 15V, 15A
105 W
400µJ (on), 80µJ (off)
Standard
38 nC
16ns/145ns
400V, 15A, 39Ohm, 15V
70 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-3
IPB014N08NM6ATMA1
Infineon Technologies

TRENCH 40<-<100V

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AIMBG75R016M1HXTMA1
Infineon Technologies

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存3,000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BSM300GA160DN13CB7HOSA1
Infineon Technologies

BSM300GA160 - INSULATED GATE BIP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SIGC18T60NCX7SA2
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 20A, 13Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
20 A
60 A
2.5V @ 15V, 20A
-
-
Standard
-
21ns/110ns
300V, 20A, 13Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SIGC18T60NCX7SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 60 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 21ns/110ns
  • Test Condition: 300V, 20A, 13Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
600 V
20 A
60 A
2.5V @ 15V, 20A
-
-
Standard
-
21ns/110ns
300V, 20A, 13Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die