图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
GANFET N-CH
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封装: - |
Request a Quote |
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GaNFET (Gallium Nitride) | 600 V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-DSO-20-87 | 20-PowerSOIC (0.433", 11.00mm Width) |
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Infineon Technologies |
MOSFET N-CH 650V 14A TO220-3
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封装: - |
库存1,272 |
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MOSFET (Metal Oxide) | 650 V | 14A (Tc) | 10V | 4.5V @ 300µA | 28 nC @ 10 V | 1199 pF @ 400 V | ±20V | - | 75W (Tc) | 170mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
TRENCH 40<-<100V PG-TO220-3
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封装: - |
库存1,455 |
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MOSFET (Metal Oxide) | 60 V | 36A (Ta), 194A (Tc) | 6V, 10V | 3.3V @ 186µA | 233 nC @ 10 V | 10500 pF @ 30 V | ±20V | - | 3.8W (Ta), 250W (Tc) | 1.6mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-U05 | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 20V 5.8A 2X2 PQFN
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 20 V | 7.2A (Ta), 15A (Tc) | - | 1.1V @ 10µA | 12 nC @ 10 V | 877 pF @ 10 V | - | - | - | 31mOhm @ 8.5A, 4.5V | - | Surface Mount | 6-PQFN (2x2) | 6-PowerVDFN |
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Infineon Technologies |
MOSFET_(20V 40V)
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
GAN HV
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封装: - |
Request a Quote |
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GaNFET (Gallium Nitride) | 600 V | 10.4A (Tc) | - | 1.6V @ 690µA | - | 110 pF @ 400 V | -10V | - | 52W (Tc) | - | -40°C ~ 150°C (TJ) | Surface Mount | PG-TSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
TRENCH >=100V PG-TTFN-9
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封装: - |
库存29,790 |
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MOSFET (Metal Oxide) | 100 V | 14A (Ta), 85A (Tc) | 6V, 10V | 3.8V @ 48µA | 42 nC @ 10 V | 3000 pF @ 50 V | ±20V | - | 2.5W (Ta), 100W (Tc) | 6.5mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PG-TTFN-9-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET 650V NCH SIC TRENCH
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封装: - |
库存165 |
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SiCFET (Silicon Carbide) | 650 V | 26A (Tc) | 18V | 5.7V @ 4mA | 22 nC @ 18 V | 744 pF @ 400 V | +23V, -5V | - | 96W (Tc) | 94mOhm @ 13.3A, 18V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 4.5A (Tc) | 10V | 5.5V @ 200µA | 22.9 nC @ 10 V | 580 pF @ 25 V | ±20V | - | 50W (Tc) | 950mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 4.5A (Tc) | 10V | 5.5V @ 200µA | 22.9 nC @ 10 V | 580 pF @ 25 V | ±20V | - | 50W (Tc) | 950mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
TRENCH 40<-<100V
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET_(75V 120V(
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 70A (Tc) | 4.5V, 10V | 2.4V @ 83µA | 80 nC @ 10 V | 5570 pF @ 25 V | ±20V | - | 125W (Tc) | 12.1mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
IAUC60N04S6L039ATMA1
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封装: - |
库存41,658 |
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MOSFET (Metal Oxide) | 40 V | 60A (Tc) | 4.5V, 10V | 2V @ 14µA | 20 nC @ 10 V | 1179 pF @ 25 V | ±16V | - | 42W (Tc) | 4.02mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
N-CHANNEL POWER MOSFET
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 5.5V @ 500µA | 54 nC @ 10 V | 1460 pF @ 25 V | ±20V | - | 125W (Tc) | 380mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I2PAK, TO-262AA |
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Infineon Technologies |
IC MOSFET
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
TRENCH >=100V PG-TSDSON-8
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封装: - |
库存14,370 |
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MOSFET (Metal Oxide) | 100 V | 13A (Ta), 75A (Tc) | 8V, 10V | 3.3V @ 36µA | 24 nC @ 10 V | 1800 pF @ 50 V | ±20V | - | 3W (Ta), 100W (Tc) | 8.04mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSDSON-8 FL | 8-PowerTDFN |
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Infineon Technologies |
TRENCH PG-TO220-3
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封装: - |
库存2,406 |
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MOSFET (Metal Oxide) | 40 V | 25A (Ta), 113A (Tc) | 6V, 10V | 3.4V @ 53µA | 68 nC @ 10 V | 3200 pF @ 20 V | ±20V | - | 3.8W (Ta), 107W (Tc) | 3.3mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-U05 | TO-220-3 |
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Infineon Technologies |
SIC_DISCRETE
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封装: - |
Request a Quote |
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SiC (Silicon Carbide Junction Transistor) | 1200 V | 31A (Tc) | 18V, 20V | 5.1V @ 3.3mA | 24 nC @ 20 V | 671 pF @ 800 V | +23V, -5V | - | 169W (Tc) | 100mOhm @ 10A, 20V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-11 | TO-247-4 |
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Infineon Technologies |
MOSFET N-CH 100V 300A 8HSOF
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封装: - |
库存10,971 |
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MOSFET (Metal Oxide) | 100 V | 300A (Tc) | 6V, 10V | 3.8V @ 275µA | 216 nC @ 10 V | 16011 pF @ 50 V | ±20V | - | 375W (Tc) | 1.5mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 600V 6A TO220
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 600 V | 6A (Tc) | 10V | 4V @ 80µA | 9 nC @ 10 V | 363 pF @ 400 V | ±20V | - | 21W (Tc) | 600mOhm @ 1.7A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V 7.3A TO251-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 650 V | 7.3A (Tc) | 10V | 3.9V @ 350µA | 27 nC @ 10 V | 790 pF @ 25 V | ±20V | - | 83W (Tc) | 600mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3-21 | TO-251-3 Short Leads, IPAK, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 600V 9A TO252-3
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封装: - |
库存14,673 |
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MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 4.5V @ 180µA | 18 nC @ 10 V | 807 pF @ 400 V | ±20V | - | 51W (Tc) | 280mOhm @ 3.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Infineon Technologies |
OPTIMOSTM5LINEARFET100V
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 19A (Ta), 164A (Tc) | 10V | 3.9V @ 115µA | 88 nC @ 10 V | 7200 pF @ 50 V | ±20V | - | 3W (Ta), 217W (Tc) | 3.5mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 13A 5X6 PQFN
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 13A (Ta), 100A (Tc) | - | 4V @ 150µA | 98 nC @ 10 V | 4340 pF @ 25 V | - | - | - | 9mOhm @ 50A, 10V | - | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 150V 130A TO263-7
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封装: - |
库存9,612 |
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MOSFET (Metal Oxide) | 150 V | 130A (Tc) | 8V, 10V | 4V @ 270µA | 93 nC @ 10 V | 7300 pF @ 75 V | ±20V | - | 300W (Tc) | 6.5mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D2PAK (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 30V 80A TO220-3
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 2.2V @ 90µA | 140 nC @ 10 V | 9750 pF @ 25 V | ±16V | - | 136W (Tc) | 2.7mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 40A 8TSDSON-33
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封装: - |
库存60,816 |
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MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 6V, 10V | 3.8V @ 27µA | 24 nC @ 10 V | 1525 pF @ 50 V | ±20V | - | 68W (Tc) | 13mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSDSON-8-33 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH BARE DIE
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封装: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
40V 5.8M OPTIMOS MOSFET SUPERSO8
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封装: - |
库存83,721 |
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MOSFET (Metal Oxide) | 40 V | 17A (Ta), 63A (Tc) | 7V, 10V | 3.4V @ 13µA | 16 nC @ 10 V | 1100 pF @ 20 V | ±20V | - | 3W (Ta), 42W (Tc) | 5.8mOhm @ 31A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 900V 11A TO220-FP
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封装: - |
Request a Quote |
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MOSFET (Metal Oxide) | 900 V | 11A (Tc) | 10V | 3.5V @ 740µA | 68 nC @ 10 V | 1700 pF @ 100 V | ±20V | - | 34W (Tc) | 500mOhm @ 6.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |