页 12 - Infineon Technologies 产品 - 晶体管 - FET，MOSFET - 单

DF17MR12W1M1HFB68BPSA1

Infineon Technologies

LOW POWER EASY

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs(th) (Max) @ Id: 5.15V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 800 V
Vgs (Max): +20V, -7V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: -
Package / Case: Module

封装: -

库存27

SiCFET (Silicon Carbide)

1200 V

45A (Tj)

15V, 18V

5.15V @ 20mA

149 nC @ 18 V

4400 pF @ 800 V

+20V, -7V

-

16.2mOhm @ 50A, 18V

-40°C ~ 175°C (TJ)

Chassis Mount

-

Module

IPD70N12S311ATMA2

Infineon Technologies

MOSFET_(120V 300V)

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 120 V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 70A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-11
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

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MOSFET (Metal Oxide)

120 V

70A (Tc)

10V

4V @ 83µA

65 nC @ 10 V

4355 pF @ 25 V

±20V

-

125W (Tc)

11.1mOhm @ 70A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3-11

TO-252-3, DPAK (2 Leads + Tab), SC-63

BSC014N04LSATMA1

Infineon Technologies

MOSFET N-CH 40V 32/100A SUPERSO8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SuperSO8
Package / Case: 8-PowerTDFN

封装: -

库存61,683

MOSFET (Metal Oxide)

40 V

32A (Ta), 100A (Tc)

4.5V, 10V

2V @ 250µA

61 nC @ 10 V

4300 pF @ 20 V

±20V

-

2.5W (Ta), 96W (Tc)

1.4mOhm @ 50A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SuperSO8

8-PowerTDFN

IPF05N03LAG

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-23
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

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MOSFET (Metal Oxide)

25 V

50A (Tc)

4.5V, 10V

2V @ 50µA

25 nC @ 5 V

3110 pF @ 15 V

±20V

-

94W (Tc)

5.1mOhm @ 30A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3-23

TO-252-3, DPAK (2 Leads + Tab), SC-63

IPD06P005NATMA1

Infineon Technologies

MOSFET P-CH 60V 6.5A TO252-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 28W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

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MOSFET (Metal Oxide)

60 V

6.5A (Tc)

10V

4V @ 270µA

10.6 nC @ 10 V

420 pF @ 30 V

±20V

-

28W (Tc)

250mOhm @ 6.5A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPAK (2 Leads + Tab), SC-63

BSC014N03LSGATMA1

Infineon Technologies

MOSFET N-CH 30V 34A/100A TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-1
Package / Case: 8-PowerTDFN

封装: -

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MOSFET (Metal Oxide)

30 V

34A (Ta), 100A (Tc)

4.5V, 10V

2.2V @ 250µA

131 nC @ 10 V

10000 pF @ 15 V

±20V

-

2.5W (Ta), 139W (Tc)

1.4mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8-1

8-PowerTDFN

IPW65R045C7300XKSA1

Infineon Technologies

MOSFET N-CH 650V 46A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

封装: -

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MOSFET (Metal Oxide)

650 V

46A (Tc)

10V

4V @ 1.25mA

93 nC @ 10 V

4340 pF @ 400 V

±20V

-

227W (Tc)

45mOhm @ 24.9A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

IPL65R200CFD7AUMA1

Infineon Technologies

COOLMOS CFD7 SUPERJUNCTION MOSFE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 81W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 5.2A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-VSON-4
Package / Case: 4-PowerTSFN

封装: -

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MOSFET (Metal Oxide)

650 V

14A (Tc)

10V

4.5V @ 260µA

23 nC @ 10 V

1044 pF @ 400 V

±20V

-

81W (Tc)

200mOhm @ 5.2A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-VSON-4

4-PowerTSFN

BSC096N10LS5ATMA1

Infineon Technologies

MOSFET N-CH 100V 40A TDSON-8-6

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-6
Package / Case: 8-PowerTDFN

封装: -

库存25,755

MOSFET (Metal Oxide)

100 V

40A (Tc)

4.5V, 10V

2.3V @ 36µA

14.6 nC @ 4.5 V

2100 pF @ 50 V

±20V

-

3W (Ta), 83W (Tc)

9.6mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8-6

8-PowerTDFN

IAUCN04S7N009ATMA1

Infineon Technologies

MOSFET_(20V 40V)

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 175A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-34
Package / Case: 8-PowerTDFN

封装: -

库存3,000

MOSFET (Metal Oxide)

40 V

175A

10V

-

-55°C ~ 175°C

Surface Mount

PG-TDSON-8-34

8-PowerTDFN

BSO301SPHXUMA1

Infineon Technologies

MOSFET P-CH 30V 12.6A 8DSO

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.79W (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-DSO-8
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: -

库存24,984

MOSFET (Metal Oxide)

30 V

12.6A (Ta)

4.5V, 10V

2V @ 250µA

136 nC @ 10 V

5890 pF @ 25 V

±20V

-

1.79W (Ta)

8mOhm @ 14.9A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-DSO-8

8-SOIC (0.154", 3.90mm Width)

IPP65R060CFD7XKSA1

Infineon Technologies

650V FET COOLMOS TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 860µA
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: -

库存1,290

MOSFET (Metal Oxide)

650 V

36A (Tc)

10V

4.5V @ 860µA

68 nC @ 10 V

3288 pF @ 400 V

±20V

-

171W (Tc)

60mOhm @ 16.4A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

IPT039N15N5ATMA1

Infineon Technologies

OPTIMOS 5 POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 190A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs(th) (Max) @ Id: 4.6V @ 257µA
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 319W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8
Package / Case: 8-PowerSFN

封装: -

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MOSFET (Metal Oxide)

150 V

21A (Ta), 190A (Tc)

8V, 10V

4.6V @ 257µA

98 nC @ 10 V

7700 pF @ 75 V

±20V

-

3.8W (Ta), 319W (Tc)

3.9mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOF-8

8-PowerSFN

SPB21N50C3ATMA1

Infineon Technologies

MOSFET N-CH 560V 21A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 560 V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

库存8,709

MOSFET (Metal Oxide)

560 V

21A (Tc)

10V

3.9V @ 1mA

95 nC @ 10 V

2400 pF @ 25 V

±20V

-

208W (Tc)

190mOhm @ 13.1A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3-2

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPLK70R1K4P7ATMA1

Infineon Technologies

MOSFET N-CH 700V TDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

封装: -

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MOSFET (Metal Oxide)

700 V

-

Surface Mount

PG-TDSON-8

8-PowerTDFN

IRFP4368PBFXKMA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75 V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19230 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 195A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3

封装: -

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MOSFET (Metal Oxide)

75 V

195A (Tc)

10V

4V @ 250µA

570 nC @ 10 V

19230 pF @ 50 V

±20V

-

520W (Tc)

1.85mOhm @ 195A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-247AC

TO-247-3

IPA90R340C3XKSA1

Infineon Technologies

MOSFET N-CH 900V 15A TO220-FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

封装: -

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MOSFET (Metal Oxide)

900 V

15A (Tc)

10V

3.5V @ 1mA

94 nC @ 10 V

2400 pF @ 100 V

±20V

-

35W (Tc)

340mOhm @ 9.2A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-FP

TO-220-3 Full Pack

IPA90R340C3XKSA2

Infineon Technologies

MOSFET N-CH 900V 15A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

封装: -

库存948

MOSFET (Metal Oxide)

900 V

15A (Tc)

10V

3.5V @ 1mA

94 nC @ 10 V

2400 pF @ 100 V

±20V

-

35W (Tc)

340mOhm @ 9.2A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-FP

TO-220-3 Full Pack

BSB012N03LX3GXUMA1

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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-

IPZA60R099P7XKSA1

Infineon Technologies

MOSFET N-CH 600V 31A TO247-4

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 530µA
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 117W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4
Package / Case: TO-247-4

封装: -

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MOSFET (Metal Oxide)

600 V

31A (Tc)

10V

4V @ 530µA

45 nC @ 10 V

1952 pF @ 400 V

±20V

-

117W (Tc)

99mOhm @ 10.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-4

TO-247-4

IPP60R360CFD7XKSA1

Infineon Technologies

MOSFET 600V TO220-3-1

FET Type: -
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: -

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MOSFET (Metal Oxide)

600 V

-

±20V

-

Through Hole

PG-TO220-3-1

TO-220-3

AUIRFS8408-7TRR

Infineon Technologies

MOSFET N-CH 40V 240A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 294W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-900
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

封装: -

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MOSFET (Metal Oxide)

40 V

240A (Tc)

10V

3.9V @ 250µA

315 nC @ 10 V

10250 pF @ 25 V

±20V

-

294W (Tc)

1mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7-900

TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

IPF014N08NF2SATMA1

Infineon Technologies

TRENCH 40<-<100V PG-TO263-7

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 282A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-14
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

封装: -

库存3,462

MOSFET (Metal Oxide)

80 V

282A (Tc)

6V, 10V

3.8V @ 267µA

255 nC @ 10 V

12000 pF @ 40 V

±20V

-

300W (Tc)

1.4mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7-14

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

AUIRF1405-INF

Infineon Technologies

AUTOMOTIVE HEXFET N CHANNEL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: -

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MOSFET (Metal Oxide)

55 V

75A (Tc)

-

4V @ 250µA

260 nC @ 10 V

5480 pF @ 25 V

±20V

-

330W (Tc)

5.3mOhm @ 101A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

IPT014N10N5ATMA1

Infineon Technologies

TRENCH >=100V

FET Type: -
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 362A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-1
Package / Case: 8-PowerSFN

封装: -

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MOSFET (Metal Oxide)

100 V

362A

10V

-

Surface Mount

PG-HSOF-8-1

8-PowerSFN

IPP65R041CFD7XKSA1

Infineon Technologies

650V FET COOLMOS TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 24.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: -

库存1,470

MOSFET (Metal Oxide)

650 V

50A (Tc)

10V

4.5V @ 1.24mA

102 nC @ 10 V

4975 pF @ 400 V

±20V

-

227W (Tc)

41mOhm @ 24.8A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

IPDD60R055CFD7XTMA1

Infineon Technologies

MOSFET N-CH 600V 52A HDSOP-10

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2724 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 329W (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-10-1
Package / Case: 10-PowerSOP Module

封装: -

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MOSFET (Metal Oxide)

600 V

52A (Tc)

-

4.5V @ 760µA

67 nC @ 10 V

2724 pF @ 400 V

±20V

-

329W (Tc)

55mOhm @ 15.1A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-HDSOP-10-1

10-PowerSOP Module

IPD130N10NF2SATMA1

Infineon Technologies

MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

库存5,952

MOSFET (Metal Oxide)

100 V

11A (Ta), 52A (Tc)

6V, 10V

3.8V @ 30µA

28 nC @ 10 V

1300 pF @ 50 V

±20V

-

3W (Ta), 71W (Tc)

13mOhm @ 30A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPAK (2 Leads + Tab), SC-63

IMZ120R060M1HXKSA1

Infineon Technologies

SICFET N-CH 1.2KV 36A TO247-4

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs(th) (Max) @ Id: 5.7V @ 5.6mA
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 800 V
Vgs (Max): +23V, -7V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4-1
Package / Case: TO-247-4

封装: -

库存1,335

SiCFET (Silicon Carbide)

1200 V

36A (Tc)

15V, 18V

5.7V @ 5.6mA

31 nC @ 18 V

1060 pF @ 800 V

+23V, -7V

-

150W (Tc)

78mOhm @ 13A, 18V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO247-4-1

TO-247-4

AUIRF2804L-313

Infineon Technologies

MOSFET N-CH 40V 195A TO262

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-262
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA

封装: -

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MOSFET (Metal Oxide)

40 V

195A (Tc)

10V

4V @ 250µA

240 nC @ 10 V

6450 pF @ 25 V

±20V

-

300W (Tc)

2.3mOhm @ 75A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-262

TO-262-3 Long Leads, I2PAK, TO-262AA