页 49 - Infineon Technologies 产品 - 晶体管 - FET，MOSFET - 单 | 深圳黑森尔电子
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Infineon Technologies 产品 - 晶体管 - FET，MOSFET - 单

记录 8,381
页  49/280
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Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IQE050N08NM5CGSCATMA1
Infineon Technologies

OPTIMOS LOWVOLTAGE POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 99A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 49µA
  • Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-WHTFN-9-1
  • Package / Case: 9-PowerWDFN
封装: -
Request a Quote
MOSFET (Metal Oxide)
80 V
16A (Ta), 99A (Tc)
6V, 10V
3.8V @ 49µA
44 nC @ 10 V
2900 pF @ 40 V
±20V
-
2.5W (Ta), 100W (Tc)
5mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-WHTFN-9-1
9-PowerWDFN
IAUA250N04S6N007AUMA1
Infineon Technologies

MOSFET_(20V 40V) PG-HSOF-5

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 9898 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.7mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-5-4
  • Package / Case: 5-PowerSFN
封装: -
库存5,715
MOSFET (Metal Oxide)
40 V
435A (Tj)
7V, 10V
3V @ 130µA
151 nC @ 10 V
9898 pF @ 25 V
±20V
-
250W (Tc)
0.7mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOF-5-4
5-PowerSFN
IAUCN04S7L004ATMA1
Infineon Technologies

MOSFET_(20V 40V)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-53
  • Package / Case: 8-PowerTDFN
封装: -
Request a Quote
MOSFET (Metal Oxide)
40 V
-
10V
-
190 nC @ 10 V
-
-
-
-
-
-55°C ~ 175°C
Surface Mount
PG-TDSON-8-53
8-PowerTDFN
BSZ16DN25NS3GATMA1
Infineon Technologies

MOSFET N-CH 250V 10.9A 8TSDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 32µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 165mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8
  • Package / Case: 8-PowerTDFN
封装: -
库存18,294
MOSFET (Metal Oxide)
250 V
10.9A (Tc)
10V
4V @ 32µA
11.4 nC @ 10 V
920 pF @ 100 V
±20V
-
62.5W (Tc)
165mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerTDFN
BSC021N08NS5ATMA1
Infineon Technologies

MOSFET TRENCH 80V TSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 146µA
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 214W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.1mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSON-8-3
  • Package / Case: 8-PowerTDFN
封装: -
库存7,641
MOSFET (Metal Oxide)
80 V
100A (Tc)
6V, 10V
3.8V @ 146µA
29 nC @ 10 V
8600 pF @ 40 V
±20V
-
214W (Tc)
2.1mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TSON-8-3
8-PowerTDFN
IRFH5206TR2PBF
Infineon Technologies

MOSFET N-CH 60V 16A 5X6 PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 89A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 6.7mOhm @ 50A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (5x6)
  • Package / Case: 8-PowerVDFN
封装: -
Request a Quote
MOSFET (Metal Oxide)
60 V
16A (Ta), 89A (Tc)
-
4V @ 100µA
60 nC @ 10 V
2490 pF @ 25 V
-
-
-
6.7mOhm @ 50A, 10V
-
Surface Mount
8-PQFN (5x6)
8-PowerVDFN
SS07N70AKMA1
Infineon Technologies

MOSFET N-CH

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IMW65R083M1HXKSA1
Infineon Technologies

SILICON CARBIDE MOSFET, PG-TO247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
  • Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
  • Vgs (Max): +20V, -2V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3-41
  • Package / Case: TO-247-3
封装: -
库存195
SiCFET (Silicon Carbide)
650 V
24A (Tc)
18V
5.7V @ 3.3mA
19 nC @ 18 V
624 pF @ 400 V
+20V, -2V
-
104W (Tc)
111mOhm @ 11.2A, 18V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-3-41
TO-247-3
BSZ035N03MSGATMA1
Infineon Technologies

MOSFET N-CH 30V 18A/40A 8TSDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8
  • Package / Case: 8-PowerTDFN
封装: -
库存35,175
MOSFET (Metal Oxide)
30 V
18A (Ta), 40A (Tc)
4.5V, 10V
2V @ 250µA
74 nC @ 10 V
5700 pF @ 15 V
±20V
-
2.1W (Ta), 69W (Tc)
3.5mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerTDFN
AIMZHN120R010M1TXKSA1
Infineon Technologies

SIC_DISCRETE

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 202A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
  • Vgs(th) (Max) @ Id: 5.1V @ 30mA
  • Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5703 pF @ 800 V
  • Vgs (Max): +23V, -5V
  • FET Feature: -
  • Power Dissipation (Max): 750W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.3mOhm @ 93A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-4-14
  • Package / Case: TO-247-4
封装: -
Request a Quote
SiC (Silicon Carbide Junction Transistor)
1200 V
202A (Tc)
18V, 20V
5.1V @ 30mA
178 nC @ 20 V
5703 pF @ 800 V
+23V, -5V
-
750W (Tc)
11.3mOhm @ 93A, 20V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-4-14
TO-247-4
AIMZA75R140M1HXKSA1
Infineon Technologies

IGBT

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRL40DM247XTMA1
Infineon Technologies

TRENCH <= 40V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 211A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: MG-WDSON-8-904
  • Package / Case: DirectFET™ Isometric ME
封装: -
库存20,079
MOSFET (Metal Oxide)
40 V
44A (Ta), 211A (Tc)
4.5V, 10V
2V @ 250µA
165 nC @ 10 V
8400 pF @ 20 V
±20V
-
2.8W (Ta), 63W (Tc)
0.82mOhm @ 50A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
MG-WDSON-8-904
DirectFET™ Isometric ME
IPQC65R040CFD7XTMA1
Infineon Technologies

HIGH POWER_NEW

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
  • Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 357W (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HDSOP-22
  • Package / Case: 22-PowerBSOP Module
封装: -
Request a Quote
MOSFET (Metal Oxide)
650 V
64A (Tc)
10V
4.5V @ 1.24mA
97 nC @ 10 V
4975 pF @ 400 V
±20V
-
357W (Tc)
40mOhm @ 24.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-HDSOP-22
22-PowerBSOP Module
IPI045N10N3GXK
Infineon Technologies

MOSFET N-CH 100V 137A TO262-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 137A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 214W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
封装: -
Request a Quote
MOSFET (Metal Oxide)
100 V
137A (Tc)
6V, 10V
3.5V @ 150µA
117 nC @ 10 V
8410 pF @ 50 V
±20V
-
214W (Tc)
4.5mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO262-3
TO-262-3 Long Leads, I2PAK, TO-262AA
IPB120P04P4L03ATMA2
Infineon Technologies

MOSFET P-CH 40V 120A TO263-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 340µA
  • Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
  • Vgs (Max): +5V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
库存12,081
MOSFET (Metal Oxide)
40 V
120A (Tc)
4.5V, 10V
2.2V @ 340µA
234 nC @ 10 V
15000 pF @ 25 V
+5V, -16V
-
136W (Tc)
3.4mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPP60R450E6XKSA1
Infineon Technologies

MOSFET N-CH 600V 9.2A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 280µA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 74W (Tc)
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 3.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
600 V
9.2A (Tc)
10V
3.5V @ 280µA
28 nC @ 10 V
620 pF @ 100 V
±20V
-
74W (Tc)
450mOhm @ 3.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
IPB083N10N3GATMA1
Infineon Technologies

MOSFET N-CH 100V 80A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 75µA
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
库存13,356
MOSFET (Metal Oxide)
100 V
80A (Tc)
6V, 10V
3.5V @ 75µA
55 nC @ 10 V
3980 pF @ 50 V
±20V
-
125W (Tc)
8.3mOhm @ 73A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPB60R520CP
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 66W (Tc)
  • Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
Request a Quote
MOSFET (Metal Oxide)
600 V
6.8A (Tc)
10V
3.5V @ 250µA
31 nC @ 10 V
630 pF @ 100 V
±20V
-
66W (Tc)
520mOhm @ 3.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPP90R500C3
Infineon Technologies

MOSFET N-CH 900V 11A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 740µA
  • Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
封装: -
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MOSFET (Metal Oxide)
900 V
11A (Tc)
10V
3.5V @ 740µA
68 nC @ 10 V
1700 pF @ 100 V
±20V
-
156W (Tc)
500mOhm @ 6.6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
IAUC100N04S6N028ATMA1
Infineon Technologies

IAUC100N04S6N028ATMA1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 24µA
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 62W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.86mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
封装: -
库存30,174
MOSFET (Metal Oxide)
40 V
100A (Tc)
7V, 10V
3V @ 24µA
29 nC @ 10 V
1781 pF @ 25 V
±20V
-
62W (Tc)
2.86mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8
8-PowerTDFN
IPI80N04S3-06
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IPD90P04P4L04ATMA2
Infineon Technologies

MOSFET P-CH 40V 90A TO252-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
  • Vgs (Max): +5V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-313
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
库存37,539
MOSFET (Metal Oxide)
40 V
90A (Tc)
4.5V, 10V
2.2V @ 250µA
176 nC @ 10 V
11570 pF @ 25 V
+5V, -16V
-
125W (Tc)
4.3mOhm @ 90A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-313
TO-252-3, DPAK (2 Leads + Tab), SC-63
BSC146N10LS5ATMA1
Infineon Technologies

MOSFET N-CH 100V 44A TDSON-8-6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 23µA
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
  • Rds On (Max) @ Id, Vgs: 14.6mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-6
  • Package / Case: 8-PowerTDFN
封装: -
库存45,288
MOSFET (Metal Oxide)
100 V
44A (Tc)
4.5V, 10V
2.3V @ 23µA
10 nC @ 4.5 V
1300 pF @ 50 V
±20V
-
2.5W (Ta), 52W (Tc)
14.6mOhm @ 22A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-6
8-PowerTDFN
IAUCN04S7L028ATMA1
Infineon Technologies

MOSFET_(20V 40V)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 100A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-33
  • Package / Case: 8-PowerTDFN
封装: -
库存2,970
MOSFET (Metal Oxide)
40 V
100A
10V
-
-
-
-
-
-
-
-55°C ~ 175°C
Surface Mount
PG-TDSON-8-33
8-PowerTDFN
BSC074N15NS5ATMA1
Infineon Technologies

MOSFET N-CH 150V 114A TSON-8-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4.6V @ 136µA
  • Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 214W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.4mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PG-TSON-8-3
  • Package / Case: 8-PowerTDFN
封装: -
库存6,276
MOSFET (Metal Oxide)
150 V
114A (Tc)
8V, 10V
4.6V @ 136µA
52 nC @ 10 V
4000 pF @ 75 V
±20V
-
214W (Tc)
7.4mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PG-TSON-8-3
8-PowerTDFN
IPP022N12NM6AKSA1
Infineon Technologies

TRENCH >=100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120 V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 275µA
  • Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 60 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 395W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
封装: -
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MOSFET (Metal Oxide)
120 V
29A (Ta), 203A (Tc)
8V, 10V
3.6V @ 275µA
141 nC @ 10 V
11000 pF @ 60 V
±20V
-
3.8W (Ta), 395W (Tc)
2.2mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IPD088N06N3GATMA1
Infineon Technologies

MOSFET N-CH 60V 50A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 34µA
  • Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.8mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-311
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
Request a Quote
MOSFET (Metal Oxide)
60 V
50A (Tc)
10V
4V @ 34µA
48 nC @ 10 V
3900 pF @ 30 V
±20V
-
71W (Tc)
8.8mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-311
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPAN70R900P7SXKSA1
Infineon Technologies

MOSFET N-CH 700V 6A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 60µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 17.9W (Tc)
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
封装: -
库存111
MOSFET (Metal Oxide)
700 V
6A (Tc)
10V
3.5V @ 60µA
6.8 nC @ 10 V
211 pF @ 400 V
±16V
-
17.9W (Tc)
900mOhm @ 1.1A, 10V
-40°C ~ 150°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
IPA040N08NM5SXKSA1
Infineon Technologies

TRENCH 40<-<100V PG-TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 109µA
  • Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 39W (Tc)
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 38A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
封装: -
库存1,470
MOSFET (Metal Oxide)
80 V
75A (Tc)
6V, 10V
3.8V @ 109µA
93 nC @ 10 V
6400 pF @ 40 V
±20V
-
39W (Tc)
4mOhm @ 38A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
IPA030N10N3GXKSA1
Infineon Technologies

MOSFET N-CH 100V 79A TO220-FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 41W (Tc)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 79A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
封装: -
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MOSFET (Metal Oxide)
100 V
79A (Tc)
6V, 10V
3.5V @ 270µA
206 nC @ 10 V
14800 pF @ 50 V
±20V
-
41W (Tc)
3mOhm @ 79A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack