页 47 - Infineon Technologies 产品 - 晶体管 - FET，MOSFET - 单 | 深圳黑森尔电子
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Infineon Technologies 产品 - 晶体管 - FET，MOSFET - 单

记录 8,381
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Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SPB04N60C3ATMA1
Infineon Technologies

MOSFET N-CH 650V 4.5A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
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MOSFET (Metal Oxide)
650 V
4.5A (Tc)
10V
3.9V @ 200µA
25 nC @ 10 V
490 pF @ 25 V
±20V
-
50W (Tc)
950mOhm @ 2.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPW60R125CPFKSA1
Infineon Technologies

MOSFET N-CH 600V 25A TO247-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
  • Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3-1
  • Package / Case: TO-247-3
封装: -
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MOSFET (Metal Oxide)
600 V
25A (Tc)
10V
3.5V @ 1.1mA
70 nC @ 10 V
2500 pF @ 100 V
±20V
-
208W (Tc)
125mOhm @ 16A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3-1
TO-247-3
IPAW60R360P7SE8228XKSA1
Infineon Technologies

MOSFET N-CH 600V 9A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 140µA
  • Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 22W (Tc)
  • Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
封装: -
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MOSFET (Metal Oxide)
600 V
9A (Tc)
10V
4V @ 140µA
13 nC @ 10 V
555 pF @ 400 V
±20V
-
22W (Tc)
360mOhm @ 2.7A, 10V
-40°C ~ 150°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
IGLD60R190D1AUMA3
Infineon Technologies

GAN HV

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1.6V @ 960µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
  • Vgs (Max): -10V
  • FET Feature: -
  • Power Dissipation (Max): 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-LSON-8-1
  • Package / Case: 8-LDFN Exposed Pad
封装: -
库存6,882
GaNFET (Gallium Nitride)
600 V
10A (Tc)
-
1.6V @ 960µA
-
157 pF @ 400 V
-10V
-
62.5W (Tc)
-
-55°C ~ 150°C (TJ)
Surface Mount
PG-LSON-8-1
8-LDFN Exposed Pad
IGLD60R190D1AUMA1
Infineon Technologies

GAN N-CH 600V 10A LSON-8

  • FET Type: N-Channel
  • Technology: GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1.6V @ 960µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
  • Vgs (Max): -10V
  • FET Feature: -
  • Power Dissipation (Max): 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-LSON-8-1
  • Package / Case: 8-LDFN Exposed Pad
封装: -
Request a Quote
GaNFET (Gallium Nitride)
600 V
10A (Tc)
-
1.6V @ 960µA
-
157 pF @ 400 V
-10V
-
62.5W (Tc)
-
-55°C ~ 150°C (TJ)
Surface Mount
PG-LSON-8-1
8-LDFN Exposed Pad
IRFH5302DTR2PBF
Infineon Technologies

MOSFET N-CH 30V 29A 8VQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.35V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3635 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (5x6) Single Die
  • Package / Case: 8-PowerVDFN
封装: -
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MOSFET (Metal Oxide)
30 V
29A (Ta), 100A (Tc)
-
2.35V @ 100µA
55 nC @ 10 V
3635 pF @ 25 V
-
-
-
2.5mOhm @ 50A, 10V
-
Surface Mount
PQFN (5x6) Single Die
8-PowerVDFN
IPP129N10NF2SAKMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 12.9mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
封装: -
库存3,003
MOSFET (Metal Oxide)
100 V
12A (Ta), 52A (Tc)
6V, 10V
3.8V @ 30µA
28 nC @ 10 V
1300 pF @ 50 V
±20V
-
3.8W (Ta), 71W (Tc)
12.9mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
IPDD60R125G7XTMA1
Infineon Technologies

MOSFET N-CH 600V 20A HDSOP-10

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 320µA
  • Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 6.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HDSOP-10-1
  • Package / Case: 10-PowerSOP Module
封装: -
库存5,061
MOSFET (Metal Oxide)
600 V
20A (Tc)
10V
4V @ 320µA
27 nC @ 10 V
1080 pF @ 400 V
±20V
-
120W (Tc)
125mOhm @ 6.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-HDSOP-10-1
10-PowerSOP Module
IRFB4229PBFXKMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 330W (Tc)
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 26A, 10V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
250 V
46A (Tc)
10V
5V @ 250µA
110 nC @ 10 V
4560 pF @ 25 V
±30V
-
330W (Tc)
46mOhm @ 26A, 10V
-40°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IPB0401NM5SATMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
库存2,970
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IPP60R105CFD7XKSA1
Infineon Technologies

MOSFET N CH

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 470µA
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1752 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 106W (Tc)
  • Rds On (Max) @ Id, Vgs: 105mOhm @ 9.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
封装: -
库存531
MOSFET (Metal Oxide)
600 V
21A (Tc)
10V
4.5V @ 470µA
42 nC @ 10 V
1752 pF @ 400 V
±20V
-
106W (Tc)
105mOhm @ 9.3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
BSC070N10LS5ATMA1
Infineon Technologies

MOSFET N-CH 100V 14A/79A TDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 79A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 49µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8-7
  • Package / Case: 8-PowerTDFN
封装: -
库存5,436
MOSFET (Metal Oxide)
100 V
14A (Ta), 79A (Tc)
4.5V, 10V
2.3V @ 49µA
20 nC @ 4.5 V
2700 pF @ 50 V
±20V
-
2.5W (Ta), 83W (Tc)
7mOhm @ 40A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
IPW60R280C6FKSA1
Infineon Technologies

MOSFET N-CH 600V 13.8A TO247-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 430µA
  • Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3-1
  • Package / Case: TO-247-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
600 V
13.8A (Tc)
10V
3.5V @ 430µA
43 nC @ 10 V
950 pF @ 100 V
±20V
-
104W (Tc)
280mOhm @ 6.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3-1
TO-247-3
IRF6643TRPBFXTMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.9V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 34.5mOhm @ 7.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DirectFET™ Isometric MZ
  • Package / Case: DirectFET™ Isometric MZ
封装: -
Request a Quote
MOSFET (Metal Oxide)
150 V
6.2A (Ta), 35A (Tc)
10V
4.9V @ 150µA
55 nC @ 10 V
2340 pF @ 25 V
±20V
-
2.8W (Ta), 89W (Tc)
34.5mOhm @ 7.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DirectFET™ Isometric MZ
DirectFET™ Isometric MZ
IPP070N08N3GXKSA1
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 73µA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 73A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
80 V
80A (Tc)
6V, 10V
3.5V @ 73µA
56 nC @ 10 V
3840 pF @ 40 V
±20V
-
136W (Tc)
7mOhm @ 73A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
IPD50R800CEBTMA1
Infineon Technologies

MOSFET N CH 500V 5A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 13V
  • Vgs(th) (Max) @ Id: 3.5V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 800mOhm @ 1.5A, 13V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
Request a Quote
MOSFET (Metal Oxide)
500 V
5A (Tc)
13V
3.5V @ 130µA
12.4 nC @ 10 V
280 pF @ 100 V
±20V
-
40W (Tc)
800mOhm @ 1.5A, 13V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
IPA70R450P7SXKSA1
Infineon Technologies

MOSFET N-CH 700V 10A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 120µA
  • Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 400 V
  • Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 22.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-FP
  • Package / Case: TO-220-3 Full Pack
封装: -
库存3
MOSFET (Metal Oxide)
700 V
10A (Tc)
10V
3.5V @ 120µA
13.1 nC @ 400 V
424 pF @ 400 V
±16V
-
22.7W (Tc)
450mOhm @ 2.3A, 10V
-40°C ~ 150°C (TJ)
Through Hole
PG-TO220-FP
TO-220-3 Full Pack
IRFB4115PBFXKMA1
Infineon Technologies

TRENCH >=100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 380W (Tc)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 62A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
150 V
104A (Tc)
10V
5V @ 250µA
120 nC @ 10 V
5270 pF @ 50 V
±20V
-
380W (Tc)
11mOhm @ 62A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
IPP65R075CFD7AAKSA1
Infineon Technologies

AUTOMOTIVE_COOLMOS PG-TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 820µA
  • Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 171W (Tc)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
封装: -
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MOSFET (Metal Oxide)
650 V
32A (Tc)
10V
4.5V @ 820µA
68 nC @ 10 V
3288 pF @ 400 V
±20V
-
171W (Tc)
75mOhm @ 16.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
IAUA170N10S5N031AUMA1
Infineon Technologies

MOSFET_(75V 120V( PG-HSOF-5

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.8V @ 110µA
  • Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6405 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 197W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 85A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-5-4
  • Package / Case: 5-PowerSFN
封装: -
库存7,542
MOSFET (Metal Oxide)
100 V
170A (Tj)
6V, 10V
3.8V @ 110µA
88 nC @ 10 V
6405 pF @ 50 V
±20V
-
197W (Tc)
3.1mOhm @ 85A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOF-5-4
5-PowerSFN
BSZ0901NSATMA1
Infineon Technologies

MOSFET N-CH 30V 22A/40A 8TSDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8
  • Package / Case: 8-PowerTDFN
封装: -
库存12,135
MOSFET (Metal Oxide)
30 V
22A (Ta), 40A (Tc)
4.5V, 10V
2.2V @ 250µA
45 nC @ 10 V
2850 pF @ 15 V
±20V
-
2.1W (Ta), 50W (Tc)
2mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerTDFN
IRF7494TR
Infineon Technologies

MOSFET N-CH 150V 5.2A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 44mOhm @ 3.1A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: -
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MOSFET (Metal Oxide)
150 V
5.2A (Ta)
-
4V @ 250µA
54 nC @ 10 V
1750 pF @ 25 V
-
-
-
44mOhm @ 3.1A, 10V
-
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
BSC0908NS
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BUZ73AHXKSA1
Infineon Technologies

N-CHANNEL POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
封装: -
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MOSFET (Metal Oxide)
200 V
5.5A (Tc)
10V
4V @ 1mA
-
530 pF @ 25 V
±20V
-
40W (Tc)
600mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IRFH7446TR2PBF
Infineon Technologies

MOSFET N CH 40V 85A PQFN 5X6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 3.9V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3174 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (5x6)
  • Package / Case: 8-PowerTDFN
封装: -
Request a Quote
MOSFET (Metal Oxide)
40 V
85A (Tc)
-
3.9V @ 100µA
98 nC @ 10 V
3174 pF @ 25 V
-
-
-
3.3mOhm @ 50A, 10V
-
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
IPB80P04P4L04ATMA2
Infineon Technologies

MOSFET P-CH 40V 80A TO263-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
  • Vgs (Max): +5V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
库存23,196
MOSFET (Metal Oxide)
40 V
80A (Tc)
4.5V, 10V
2.2V @ 250µA
176 nC @ 10 V
11570 pF @ 25 V
+5V, -16V
-
125W (Tc)
4.7mOhm @ 80A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
BSR202NL6327HTSA1
Infineon Technologies

MOSFET N-CH 20V 3.8A SC59

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1147 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 3.8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SC59-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: -
库存81,600
MOSFET (Metal Oxide)
20 V
3.8A (Ta)
2.5V, 4.5V
1.2V @ 30µA
8.8 nC @ 4.5 V
1147 pF @ 10 V
±12V
-
500mW (Ta)
21mOhm @ 3.8A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SC59-3
TO-236-3, SC-59, SOT-23-3
IPB072N15N3GATMA1
Infineon Technologies

MOSFET N-CH 150V 100A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5470 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.2mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
库存14,058
MOSFET (Metal Oxide)
150 V
100A (Tc)
8V, 10V
4V @ 270µA
93 nC @ 10 V
5470 pF @ 75 V
±20V
-
300W (Tc)
7.2mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPW65R099CFD7AXKSA1
Infineon Technologies

MOSFET N-CH 650V 24A TO247-3-41

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 630µA
  • Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 127W (Tc)
  • Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3-41
  • Package / Case: TO-247-3
封装: -
库存558
MOSFET (Metal Oxide)
650 V
24A (Tc)
10V
4.5V @ 630µA
53 nC @ 10 V
2513 pF @ 400 V
±20V
-
127W (Tc)
99mOhm @ 12.5A, 10V
-40°C ~ 150°C (TJ)
Through Hole
PG-TO247-3-41
TO-247-3
IPW50R140CPFKSA1
Infineon Technologies

MOSFET N-CH 550V 23A TO247-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 550 V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 930µA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 192W (Tc)
  • Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3-1
  • Package / Case: TO-247-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
550 V
23A (Tc)
10V
3.5V @ 930µA
64 nC @ 10 V
2540 pF @ 100 V
±20V
-
192W (Tc)
140mOhm @ 14A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3-1
TO-247-3