页 4 - Infineon Technologies 产品 - 晶体管 - FET,MOSFET - 单 | 深圳黑森尔电子
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Infineon Technologies 产品 - 晶体管 - FET,MOSFET - 单

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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
94-2311PBF
Infineon Technologies

MOSFET N-CH 100V 36A D2PAK

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
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BSO203SPHXUMA1
Infineon Technologies

MOSFET P-CH 20V 7A 8DSO

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 21mOhm @ 8.9A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-DSO-8
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: -
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MOSFET (Metal Oxide)
20 V
7A (Ta)
2.5V, 4.5V
1.2V @ 100µA
39 nC @ 4.5 V
3750 pF @ 15 V
±12V
-
1.6W (Ta)
21mOhm @ 8.9A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PG-DSO-8
8-SOIC (0.154", 3.90mm Width)
ISZ0804NLSATMA1
Infineon Technologies

MOSFET N-CH 100V 11A/58A TSDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 28µA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8-26
  • Package / Case: 8-PowerTDFN
封装: -
库存19,155
MOSFET (Metal Oxide)
100 V
11A (Ta), 58A (Tc)
4.5V, 10V
2.3V @ 28µA
24 nC @ 10 V
1600 pF @ 50 V
±20V
-
2.1W (Ta), 60W (Tc)
11.5mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-26
8-PowerTDFN
SPD04N50C3T
Infineon Technologies

MOSFET N-CH 560V 4.5A DPAK

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
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IPB011N04LGATMA1
Infineon Technologies

MOSFET N-CH 40V 180A TO263-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 346 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 29000 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7-3
  • Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
封装: -
库存7,479
MOSFET (Metal Oxide)
40 V
180A (Tc)
4.5V, 10V
2V @ 200µA
346 nC @ 10 V
29000 pF @ 20 V
±20V
-
250W (Tc)
1.1mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-3
TO-263-7, D2PAK (6 Leads + Tab)
IMBG120R181M2HXTMA1
Infineon Technologies

SIC DISCRETE

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
库存3,000
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ISC060N10NM6ATMA1
Infineon Technologies

TRENCH >=100V PG-TDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 97A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 3.3V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8 FL
  • Package / Case: 8-PowerTDFN
封装: -
库存31,068
MOSFET (Metal Oxide)
100 V
15A (Ta), 97A (Tc)
8V, 10V
3.3V @ 50µA
33 nC @ 10 V
2500 pF @ 50 V
±20V
-
3W (Ta), 125W (Tc)
6mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8 FL
8-PowerTDFN
IPT60R125CFD7XTMA1
Infineon Technologies

MOSFET N-CH 600V 21A 8HSOF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 340µA
  • Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 127W (Tc)
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8-1
  • Package / Case: 8-PowerSFN
封装: -
库存6,000
MOSFET (Metal Oxide)
600 V
21A (Tc)
10V
4.5V @ 340µA
31 nC @ 10 V
1330 pF @ 400 V
±20V
-
127W (Tc)
125mOhm @ 6.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-HSOF-8-1
8-PowerSFN
ISZ113N10NM5LFATMA1
Infineon Technologies

OPTIMOSTM5LINEARFET100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 36µA
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8 FL
  • Package / Case: 8-PowerTDFN
封装: -
Request a Quote
MOSFET (Metal Oxide)
100 V
10A (Ta), 63A (Tc)
10V
3.9V @ 36µA
29 nC @ 10 V
2300 pF @ 50 V
±20V
-
2.5W (Ta), 100W (Tc)
11.3mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TSDSON-8 FL
8-PowerTDFN
IAUA250N04S6N005AUMA1
Infineon Technologies

OPTIMOS POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 62A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 145µA
  • Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 11144 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 0.55mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-5-5
  • Package / Case: 5-PowerSFN
封装: -
库存8,436
MOSFET (Metal Oxide)
40 V
62A (Ta)
7V, 10V
3V @ 145µA
170 nC @ 10 V
11144 pF @ 25 V
±20V
-
250W (Tc)
0.55mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOF-5-5
5-PowerSFN
IPB107N20N3GATMA1
Infineon Technologies

MOSFET N-CH 200V 88A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.7mOhm @ 88A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
库存24,579
MOSFET (Metal Oxide)
200 V
88A (Tc)
10V
4V @ 270µA
87 nC @ 10 V
7100 pF @ 100 V
±20V
-
300W (Tc)
10.7mOhm @ 88A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPQC65R125CFD7AXTMA1
Infineon Technologies

AUTOMOTIVE_COOLMOS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 390µA
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HDSOP-22-1
  • Package / Case: 22-PowerBSOP Module
封装: -
库存600
MOSFET (Metal Oxide)
650 V
24A (Tc)
10V
4.5V @ 390µA
32 nC @ 10 V
1566 pF @ 400 V
±20V
-
160W (Tc)
125mOhm @ 7.8A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
PG-HDSOP-22-1
22-PowerBSOP Module
IPT039N15N5XTMA1
Infineon Technologies

TRENCH >=100V PG-HSOF-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4.6V @ 257µA
  • Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 319W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HSOF-8
  • Package / Case: 8-PowerSFN
封装: -
Request a Quote
MOSFET (Metal Oxide)
150 V
190A (Tc)
8V, 10V
4.6V @ 257µA
98 nC @ 10 V
7700 pF @ 75 V
±20V
-
319W (Tc)
3.9mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-HSOF-8
8-PowerSFN
IRFH7107TR2PBF
Infineon Technologies

MOSFET N-CH 75V 14A 8PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 8.5mOhm @ 45A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (5x6)
  • Package / Case: 8-PowerTDFN
封装: -
Request a Quote
MOSFET (Metal Oxide)
75 V
14A (Ta), 75A (Tc)
-
4V @ 100µA
72 nC @ 10 V
3110 pF @ 25 V
-
-
-
8.5mOhm @ 45A, 10V
-
Surface Mount
8-PQFN (5x6)
8-PowerTDFN
IWM013N06NM5XUMA1
Infineon Technologies

TRENCH 40<-<100V

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
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IAUC120N04S6N013ATMA1
Infineon Technologies

IAUC120N04S6N013ATMA1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 60µA
  • Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4260 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 115W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.34mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
封装: -
库存30,000
MOSFET (Metal Oxide)
40 V
120A (Tc)
7V, 10V
3V @ 60µA
68 nC @ 10 V
4260 pF @ 25 V
±20V
-
115W (Tc)
1.34mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TDSON-8
8-PowerTDFN
IMZ120R030M1HXKSA1
Infineon Technologies

SICFET N-CH 1.2KV 56A TO247-4

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 5.7V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2120 pF @ 800 V
  • Vgs (Max): +23V, -7V
  • FET Feature: -
  • Power Dissipation (Max): 227W (Tc)
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-4-1
  • Package / Case: TO-247-4
封装: -
库存387
SiCFET (Silicon Carbide)
1200 V
56A (Tc)
15V, 18V
5.7V @ 10mA
63 nC @ 18 V
2120 pF @ 800 V
+23V, -7V
-
227W (Tc)
40mOhm @ 25A, 18V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO247-4-1
TO-247-4
IPL60R060CFD7AUMA1
Infineon Technologies

MOSFET N CH

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 900µA
  • Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3193 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 219W (Tc)
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 18A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-VSON-4-1
  • Package / Case: 4-PowerTSFN
封装: -
库存8,649
MOSFET (Metal Oxide)
600 V
40A (Tc)
10V
4.5V @ 900µA
79 nC @ 10 V
3193 pF @ 400 V
±20V
-
219W (Tc)
60mOhm @ 18A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
PG-VSON-4-1
4-PowerTSFN
SI3443DVTR
Infineon Technologies

MOSFET P-CH 20V 4.4A 6-TSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1079 pF @ 10 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 4.4A, 4.5V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: Micro6™(TSOP-6)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封装: -
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MOSFET (Metal Oxide)
20 V
4.4A (Ta)
-
1.5V @ 250µA
15 nC @ 4.5 V
1079 pF @ 10 V
-
-
-
65mOhm @ 4.4A, 4.5V
-
Surface Mount
Micro6™(TSOP-6)
SOT-23-6 Thin, TSOT-23-6
BSZ22DN20NS3GATMA1
Infineon Technologies

MOSFET N-CH 200V 7A 8TSDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 13µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 34W (Tc)
  • Rds On (Max) @ Id, Vgs: 225mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8
  • Package / Case: 8-PowerTDFN
封装: -
库存10,812
MOSFET (Metal Oxide)
200 V
7A (Tc)
10V
4V @ 13µA
5.6 nC @ 10 V
430 pF @ 100 V
±20V
-
34W (Tc)
225mOhm @ 3.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8
8-PowerTDFN
IMT65R022M1HXTMA1
Infineon Technologies

SILICON CARBIDE MOSFET PG-HSOF-8

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
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-
-
-
-
-
-
-
-
-
-
-
-
-
-
IPB120P04P404ATMA2
Infineon Technologies

MOSFET P-CH 40V 120A TO263-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 340µA
  • Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
库存42,012
MOSFET (Metal Oxide)
40 V
120A (Tc)
-
4V @ 340µA
205 nC @ 10 V
14790 pF @ 25 V
±20V
-
136W (Tc)
3.8mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
BSZ0904NSIATMA1
Infineon Technologies

MOSFET N-CH 30V 18A/40A TSDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1463 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Body)
  • Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8-FL
  • Package / Case: 8-PowerTDFN
封装: -
库存44,958
MOSFET (Metal Oxide)
30 V
18A (Ta), 40A (Tc)
4.5V, 10V
2V @ 250µA
11 nC @ 4.5 V
1463 pF @ 15 V
±20V
Schottky Diode (Body)
2.1W (Ta), 37W (Tc)
4mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
ISC030N12NM6ATMA1
Infineon Technologies

OPTIMOS 6 POWER-TRANSISTOR,120V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 120 V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 194A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 141µA
  • Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 60 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.04mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSON-8-3
  • Package / Case: 8-PowerTDFN
封装: -
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MOSFET (Metal Oxide)
120 V
21A (Ta), 194A (Tc)
8V, 10V
3.6V @ 141µA
74 nC @ 10 V
5500 pF @ 60 V
±20V
-
3W (Ta), 250W (Tc)
3.04mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TSON-8-3
8-PowerTDFN
IPSA70R360P7SAKMA1
Infineon Technologies

MOSFET N-CH 700V 12.5A TO251-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 400 V
  • Input Capacitance (Ciss) (Max) @ Vds: 517 pF @ 400 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 59.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 360mOhm @ 3A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封装: -
库存1,035
MOSFET (Metal Oxide)
700 V
12.5A (Tc)
10V
3.5V @ 150µA
16.4 nC @ 400 V
517 pF @ 400 V
±16V
-
59.5W (Tc)
360mOhm @ 3A, 10V
-40°C ~ 150°C (TJ)
Through Hole
PG-TO251-3
TO-251-3 Short Leads, IPak, TO-251AA
64-2028
Infineon Technologies

MOSFET N-CH 55V 75A D2PAK

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
64-2128
Infineon Technologies

MOSFET N-CH 100V 180A D2PAK

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IPP029N06NXKSA1
Infineon Technologies

TRENCH 40<-<100V

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.3V @ 75µA
  • Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5125 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
封装: -
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MOSFET (Metal Oxide)
60 V
100A (Tc)
6V, 10V
3.3V @ 75µA
66 nC @ 10 V
5125 pF @ 30 V
±20V
-
3W (Ta), 136W (Tc)
2.9mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
BSZ300N15NS5ATMA1
Infineon Technologies

MOSFET N-CH 150V 32A TSDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4.6V @ 32µA
  • Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 62.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8-FL
  • Package / Case: 8-PowerTDFN
封装: -
库存8,388
MOSFET (Metal Oxide)
150 V
32A (Tc)
8V, 10V
4.6V @ 32µA
13 nC @ 10 V
950 pF @ 75 V
±20V
-
62.5W (Tc)
30mOhm @ 16A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-FL
8-PowerTDFN
IPD900P06NMATMA1
Infineon Technologies

MOSFET P-CH 60V 16.4A TO252

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 16.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 710µA
  • Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 16.4A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-313
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
库存15,339
MOSFET (Metal Oxide)
60 V
16.4A (Tc)
10V
4V @ 710µA
27 nC @ 10 V
1100 pF @ 30 V
±20V
-
63W (Tc)
90mOhm @ 16.4A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3-313
TO-252-3, DPAK (2 Leads + Tab), SC-63