页 8 - Infineon Technologies 产品 - 二极管 - 整流器 - 单 | 深圳黑森尔电子
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Infineon Technologies 产品 - 二极管 - 整流器 - 单

记录 805
页  8/27
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
38DN06B02ELEMXPSA1
Infineon Technologies

DIODE GP 600V 5140A D-ELEM-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 5140A
  • Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: BG-D-ELEM-1
  • Operating Temperature - Junction: 180°C (Max)
封装: -
库存54
600 V
5140A
960 mV @ 4500 A
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 600 V
-
Clamp On
DO-200AC, K-PUK
BG-D-ELEM-1
180°C (Max)
SIDC06D65C8X1SA1
Infineon Technologies

DIODE GEN PURP 650V 20A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.87 V @ 20 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 240 nA @ 650 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
Request a Quote
650 V
20A
1.87 V @ 20 A
Standard Recovery >500ns, > 200mA (Io)
-
240 nA @ 650 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
IDWD100E120D7XKSA1
Infineon Technologies

INDUSTRY 14

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
库存720
-
-
-
-
-
-
-
-
-
-
-
D1800N36TVFXPSA1
Infineon Technologies

DIODE GEN PURP 3.6KV 1800A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3600 V
  • Current - Average Rectified (Io): 1800A
  • Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 3600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
封装: -
Request a Quote
3600 V
1800A
1.32 V @ 1500 A
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 3600 V
-
Clamp On
DO-200AC, K-PUK
-
-40°C ~ 160°C
SIDC06D120H8X1SA2
Infineon Technologies

DIODE GP 1.2KV 7.5A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 7.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 7.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
Request a Quote
1200 V
7.5A
1.97 V @ 7.5 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 1200 V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
D740N46TXPSA1
Infineon Technologies

DIODE GEN PURP 4.6KV 750A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4600 V
  • Current - Average Rectified (Io): 750A
  • Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 700 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 70 mA @ 4600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
封装: -
Request a Quote
4600 V
750A
1.45 V @ 700 A
Standard Recovery >500ns, > 200mA (Io)
-
70 mA @ 4600 V
-
Clamp On
DO-200AB, B-PUK
-
-40°C ~ 160°C
D931SH65TXPSA1
Infineon Technologies

DIODE GEN PURP 6.5KV 1220A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 6500 V
  • Current - Average Rectified (Io): 1220A
  • Voltage - Forward (Vf) (Max) @ If: 5.6 V @ 2500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 6500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AD
  • Supplier Device Package: -
  • Operating Temperature - Junction: 0°C ~ 140°C
封装: -
Request a Quote
6500 V
1220A
5.6 V @ 2500 A
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 6500 V
-
Chassis Mount
DO-200AD
-
0°C ~ 140°C
D1800N44TVFXPSA1
Infineon Technologies

DIODE GEN PURP 4.4KV 1800A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4400 V
  • Current - Average Rectified (Io): 1800A
  • Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 4400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
封装: -
Request a Quote
4400 V
1800A
1.32 V @ 1500 A
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 4400 V
-
Clamp On
DO-200AC, K-PUK
-
-40°C ~ 160°C
SIDC03D120H6X1SA3
Infineon Technologies

DIODE GP 1.2KV 3A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
Request a Quote
1200 V
3A
1.6 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 1200 V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
GATELEADWHRD394XXPSA1
Infineon Technologies

STD THYR/DIODEN DISC

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
IDT02S60C
Infineon Technologies

DIODE SIL CARB 600V 3A TO220-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 3 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 15 µA @ 600 V
  • Capacitance @ Vr, F: 60pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
Request a Quote
600 V
3A
2.4 V @ 3 A
No Recovery Time > 500mA (Io)
0 ns
15 µA @ 600 V
60pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
D1481N62TXPSA1
Infineon Technologies

DIODE GEN PURP 6.2KV 2200A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 6200 V
  • Current - Average Rectified (Io): 2200A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 6200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
封装: -
Request a Quote
6200 V
2200A
1.8 V @ 2500 A
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 6200 V
-
Clamp On
DO-200AC, K-PUK
-
-40°C ~ 160°C
ND171N16KHPSA1
Infineon Technologies

DIODE GEN PURP 1.6KV 171A PB34-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 171A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB34-1
  • Operating Temperature - Junction: -40°C ~ 135°C
封装: -
Request a Quote
1600 V
171A
-
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1600 V
-
Chassis Mount
Module
BG-PB34-1
-40°C ~ 135°C
ND171N16KHPSA2
Infineon Technologies

DIODE GEN PURP 1.6KV 171A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 171A
  • Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
  • Operating Temperature - Junction: 150°C
封装: -
Request a Quote
1600 V
171A
1.26 V @ 500 A
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1600 V
-
Chassis Mount
Module
-
150°C
IDWD75E65E7XKSA1
Infineon Technologies

INDUSTRY 14

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: PG-TO247-2-2
  • Operating Temperature - Junction: -
封装: -
库存720
-
-
-
-
-
-
-
Through Hole
TO-247-2
PG-TO247-2-2
-
D371S45TXPSA1
Infineon Technologies

DIODE GEN PURP 4.5KV 510A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 510A
  • Voltage - Forward (Vf) (Max) @ If: 3.9 V @ 1200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 125°C
封装: -
Request a Quote
4500 V
510A
3.9 V @ 1200 A
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 4500 V
-
Clamp On
DO-200AB, B-PUK
-
-40°C ~ 125°C
D3041N65TXPSA1
Infineon Technologies

DIODE GEN PURP 6.5KV 4090A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 6500 V
  • Current - Average Rectified (Io): 4090A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 6500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
封装: -
Request a Quote
6500 V
4090A
1.7 V @ 4000 A
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 6500 V
-
Chassis Mount
DO-200AE
-
-40°C ~ 160°C
D3001N68TXPSA1
Infineon Technologies

DIODE GEN PURP 6.8KV 3910A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 6800 V
  • Current - Average Rectified (Io): 3910A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 6800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
封装: -
Request a Quote
6800 V
3910A
1.7 V @ 4000 A
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 6800 V
-
Chassis Mount
DO-200AE
-
-40°C ~ 160°C
D471N85TXPSA1
Infineon Technologies

DIODE GEN PURP 8.5KV 760A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 8500 V
  • Current - Average Rectified (Io): 760A
  • Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 1200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 8500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
封装: -
Request a Quote
8500 V
760A
3.2 V @ 1200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 8500 V
-
Clamp On
DO-200AB, B-PUK
-
-40°C ~ 160°C
SIDC14D60C8X1SA1
Infineon Technologies

DIODE GEN PURP 600V 50A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
Request a Quote
600 V
50A
1.9 V @ 50 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
SIDC14D60C8X1SA3
Infineon Technologies

DIODE GEN PURP 600V 50A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
Request a Quote
600 V
50A
1.9 V @ 50 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
SIDC14D60C8X1SA2
Infineon Technologies

DIODE GEN PURP 600V 50A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
Request a Quote
600 V
50A
1.9 V @ 50 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
BAS70E6327HTSA1
Infineon Technologies

DIODE SCHOTTKY 70V 70MA SOT23

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70 V
  • Current - Average Rectified (Io): 70mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 100 ps
  • Current - Reverse Leakage @ Vr: 100 nA @ 50 V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23
  • Operating Temperature - Junction: -55°C ~ 125°C
封装: -
库存86,694
70 V
70mA
1 V @ 15 mA
Small Signal =< 200mA (Io), Any Speed
100 ps
100 nA @ 50 V
2pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23
-55°C ~ 125°C
D1030N24TXPSA1
Infineon Technologies

DIODE GEN PURP 2.4KV 1030A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2400 V
  • Current - Average Rectified (Io): 1030A
  • Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 10000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 2400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
封装: -
Request a Quote
2400 V
1030A
1.11 V @ 10000 A
Standard Recovery >500ns, > 200mA (Io)
-
40 mA @ 2400 V
-
Clamp On
DO-200AB, B-PUK
-
-40°C ~ 160°C
IDP23013XUMA1
Infineon Technologies

IC AC/DC DGTL PLATFORM 16SOIC

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
IDH08SG60CXKSA2
Infineon Technologies

DIODE SIL CARB 600V 8A TO220-2-1

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 70 µA @ 600 V
  • Capacitance @ Vr, F: 240pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2-1
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存2,010
600 V
8A
2.1 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
70 µA @ 600 V
240pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
-55°C ~ 175°C
DZ1070N22KHPSA3
Infineon Technologies

DIODE GP 2.2KV 1100A MODULE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io): 1100A
  • Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 3000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 mA @ 2200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
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2200 V
1100A
1.11 V @ 3000 A
Standard Recovery >500ns, > 200mA (Io)
-
150 mA @ 2200 V
-
Chassis Mount
Module
Module
-40°C ~ 150°C
IDWD120E65E7XKSA1
Infineon Technologies

INDUSTRY 14

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 120 A
  • Speed: Fast Recovery =< 500ns, > 5A (Io)
  • Reverse Recovery Time (trr): 98 ns
  • Current - Reverse Leakage @ Vr: 20 µA @ 650 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: PG-TO247-2-2
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
库存720
650 V
150A
2.1 V @ 120 A
Fast Recovery =< 500ns, > 5A (Io)
98 ns
20 µA @ 650 V
-
Through Hole
TO-247-2
PG-TO247-2-2
-40°C ~ 175°C
SIDC07D60E6X1SA3
Infineon Technologies

DIODE GEN PURP 600V 15A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
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600 V
15A
1.25 V @ 15 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-55°C ~ 150°C
SIDC07D60E6X1SA1
Infineon Technologies

DIODE GP 600V 15A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 15 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 250 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
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600 V
15A
1.25 V @ 15 A
Standard Recovery >500ns, > 200mA (Io)
-
250 µA @ 600 V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C