页 5 - Infineon Technologies 产品 - 二极管 - 整流器 - 单 | 深圳黑森尔电子
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Infineon Technologies 产品 - 二极管 - 整流器 - 单

记录 805
页  5/27
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零件编号
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描述
封装
库存
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
38DN06B02ELEMPRXPSA1
Infineon Technologies

DIODE GP 600V 5140A D-ELEM-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 5140A
  • Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: BG-D-ELEM-1
  • Operating Temperature - Junction: 180°C (Max)
封装: -
Request a Quote
600 V
5140A
960 mV @ 4500 A
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 600 V
-
Clamp On
DO-200AA, A-PUK
BG-D-ELEM-1
180°C (Max)
AIDW16S65C5XKSA1
Infineon Technologies

DIODE SIL CARB 650V 16A TO247-3

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 90 µA @ 650 V
  • Capacitance @ Vr, F: 471pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-41
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
Request a Quote
650 V
16A
1.7 V @ 16 A
No Recovery Time > 500mA (Io)
0 ns
90 µA @ 650 V
471pF @ 1V, 1MHz
Through Hole
TO-247-3
PG-TO247-3-41
-40°C ~ 175°C
D1481N68TXPSA1
Infineon Technologies

DIODE GEN PURP 6.8KV 2200A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 6800 V
  • Current - Average Rectified (Io): 2200A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 6800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
封装: -
Request a Quote
6800 V
2200A
1.8 V @ 2500 A
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 6800 V
-
Clamp On
DO-200AC, K-PUK
-
-40°C ~ 160°C
DZ435N40KS01HPSA1
Infineon Technologies

DIODE GEN PURP 4KV 700A PB501-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4000 V
  • Current - Average Rectified (Io): 700A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 4000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB501-1
  • Operating Temperature - Junction: 150°C (Max)
封装: -
Request a Quote
4000 V
700A
-
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 4000 V
-
Chassis Mount
Module
BG-PB501-1
150°C (Max)
IDL08G65C5XUMA2
Infineon Technologies

DIODE SIL CARBIDE 650V 8A VSON-4

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 140 µA @ 650 V
  • Capacitance @ Vr, F: 250pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 4-PowerTSFN
  • Supplier Device Package: PG-VSON-4
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存21,984
650 V
8A
1.7 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
140 µA @ 650 V
250pF @ 1V, 1MHz
Surface Mount
4-PowerTSFN
PG-VSON-4
-55°C ~ 150°C
D251N18BXPSA1
Infineon Technologies

DIODE GEN PURP 1.8KV 255A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 255A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 180°C
封装: -
Request a Quote
1800 V
255A
-
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 1800 V
-
Stud Mount
DO-205AA, DO-8, Stud
-
-40°C ~ 180°C
IDD04SG60CXTMA2
Infineon Technologies

DIODE SIL CARB 600V 4A TO252-3

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 4 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 25 µA @ 600 V
  • Capacitance @ Vr, F: 80pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存35,649
600 V
4A
2.3 V @ 4 A
No Recovery Time > 500mA (Io)
0 ns
25 µA @ 600 V
80pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
SIDC07D60F6X1SA5
Infineon Technologies

DIODE GEN PURP 600V 22.5A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 22.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 22.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
Request a Quote
600 V
22.5A
1.6 V @ 22.5 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
SIDC07D60F6X1SA2
Infineon Technologies

DIODE GP 600V 22.5A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 22.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 22.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
Request a Quote
600 V
22.5A
1.6 V @ 22.5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 150°C
SIDC07D60F6X1SA1
Infineon Technologies

DIODE GEN PURP 600V 22.5A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 22.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 22.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
Request a Quote
600 V
22.5A
1.6 V @ 22.5 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
SIDC07D60F6X1SA3
Infineon Technologies

DIODE GEN PURP 600V 22.5A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 22.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 22.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
Request a Quote
600 V
22.5A
1.6 V @ 22.5 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
SIDC14D60E6X7SA1
Infineon Technologies

DIODE GEN PURP 600V 30A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
Request a Quote
600 V
30A
1.25 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-55°C ~ 150°C
DZ1070N28KHPSA1
Infineon Technologies

DIODE GP 2.8KV 1070A MODULE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2800 V
  • Current - Average Rectified (Io): 1070A
  • Voltage - Forward (Vf) (Max) @ If: 1.52 V @ 3400 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 mA @ 2800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
Request a Quote
2800 V
1070A
1.52 V @ 3400 A
Standard Recovery >500ns, > 200mA (Io)
-
150 mA @ 2800 V
-
Chassis Mount
Module
Module
-40°C ~ 150°C
D126B45CXPSA1
Infineon Technologies

DIODE GEN PURP 4.5KV 200A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 200A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
封装: -
Request a Quote
4500 V
200A
-
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 4500 V
-
Stud Mount
DO-205AA, DO-8, Stud
-
-40°C ~ 160°C
ND171N12KHPSA1
Infineon Technologies

DIODE GEN PURP 1.2KV 171A PB34-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 171A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB34-1
  • Operating Temperature - Junction: -40°C ~ 135°C
封装: -
Request a Quote
1200 V
171A
-
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1200 V
-
Chassis Mount
Module
BG-PB34-1
-40°C ~ 135°C
SIDC78D170HX1SA1
Infineon Technologies

DIODE GP 1.7KV 150A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1700 V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 1700 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
Request a Quote
1700 V
150A
1.8 V @ 150 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 1700 V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
DZ600N16KHPSA1
Infineon Technologies

DIODE GEN PURP 1.6KV 735A MODULE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600 V
  • Current - Average Rectified (Io): 735A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 2200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
库存9
1600 V
735A
1.4 V @ 2200 A
Standard Recovery >500ns, > 200mA (Io)
-
40 mA @ 1600 V
-
Chassis Mount
Module
Module
-40°C ~ 150°C
ND104N18KHPSA1
Infineon Technologies

DIODE GEN PURP 1.8KV 104A PB20-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 104A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB20-1
  • Operating Temperature - Junction: -40°C ~ 135°C
封装: -
Request a Quote
1800 V
104A
-
Standard Recovery >500ns, > 200mA (Io)
-
20 mA @ 1800 V
-
Chassis Mount
Module
BG-PB20-1
-40°C ~ 135°C
D3501N36TXPSA1
Infineon Technologies

DIODE GEN PURP 4870A D12035K-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 4870A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 4200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: BG-D12035K-1
  • Operating Temperature - Junction: -40°C ~ 160°C
封装: -
Request a Quote
-
4870A
-
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 4200 V
-
Chassis Mount
DO-200AE
BG-D12035K-1
-40°C ~ 160°C
IDH05G65C5XKSA2
Infineon Technologies

DIODE SIL CARB 650V 5A TO220-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 90 µA @ 650 V
  • Capacitance @ Vr, F: 160pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
Request a Quote
650 V
5A
1.7 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
90 µA @ 650 V
160pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
GATELEAD1110008XPSA1
Infineon Technologies

HIGH POWER THYR / DIO

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
IDWD40G120C5XKSA1
Infineon Technologies

DIODE SIL CARB 1.2KV 110A TO247

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 110A
  • Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 40 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 332 µA @ 1200 V
  • Capacitance @ Vr, F: 2592pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: PG-TO247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存2,178
1200 V
110A
1.65 V @ 40 A
No Recovery Time > 500mA (Io)
0 ns
332 µA @ 1200 V
2592pF @ 1V, 1MHz
Through Hole
TO-247-2
PG-TO247-2
-55°C ~ 175°C
D1301SH45TXPSA1
Infineon Technologies

DIODE GEN PURP 4.5KV 1740A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 1740A
  • Voltage - Forward (Vf) (Max) @ If: 4.3 V @ 2500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: -
  • Operating Temperature - Junction: 0°C ~ 140°C
封装: -
Request a Quote
4500 V
1740A
4.3 V @ 2500 A
Standard Recovery >500ns, > 200mA (Io)
-
150 mA @ 4500 V
-
Chassis Mount
DO-200AE
-
0°C ~ 140°C
IDDD12G65C6XTMA1
Infineon Technologies

DIODE SIL CARB 650V 34A HDSOP-10

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 34A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 420 V
  • Capacitance @ Vr, F: 594pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 10-PowerSOP Module
  • Supplier Device Package: PG-HDSOP-10-1
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存552
650 V
34A
-
No Recovery Time > 500mA (Io)
0 ns
40 µA @ 420 V
594pF @ 1V, 1MHz
Surface Mount
10-PowerSOP Module
PG-HDSOP-10-1
-55°C ~ 175°C
SIDC02D60C8X7SA2
Infineon Technologies

DIODE GEN PURP 600V 6A DIE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 6 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
Request a Quote
600 V
6A
1.95 V @ 6 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Die
-40°C ~ 175°C
IDDD06G65C6XTMA1
Infineon Technologies

DIODE SIL CARB 650V 18A HDSOP-10

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 18A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 20 µA @ 420 V
  • Capacitance @ Vr, F: 302pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 10-PowerSOP Module
  • Supplier Device Package: PG-HDSOP-10-1
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
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650 V
18A
-
No Recovery Time > 500mA (Io)
0 ns
20 µA @ 420 V
302pF @ 1V, 1MHz
Surface Mount
10-PowerSOP Module
PG-HDSOP-10-1
-55°C ~ 175°C
D350SH45TXPSA1
Infineon Technologies

DIODE GP 4.5KV 700A D7526K0-1-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 700A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: BG-D7526K0-1-1
  • Operating Temperature - Junction: -
封装: -
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4500 V
700A
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Clamp On
DO-200AC, K-PUK
BG-D7526K0-1-1
-
D1800N46TVFXPSA1
Infineon Technologies

DIODE GEN PURP 4.6KV 1800A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4600 V
  • Current - Average Rectified (Io): 1800A
  • Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 4600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
封装: -
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4600 V
1800A
1.32 V @ 1500 A
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 4600 V
-
Clamp On
DO-200AC, K-PUK
-
-40°C ~ 160°C
D452N18EVFXPSA1
Infineon Technologies

DIODE GEN PURP 1.8KV 450A FL54

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 450A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 1800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Screw Mount
  • Package / Case: Nonstandard
  • Supplier Device Package: FL54
  • Operating Temperature - Junction: -40°C ~ 180°C
封装: -
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1800 V
450A
-
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 1800 V
-
Screw Mount
Nonstandard
FL54
-40°C ~ 180°C
D841S45TS01XDLA1
Infineon Technologies

DIODE GP 4.5KV 1080A D7514-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 1080A
  • Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 2500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 140 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: BG-D7514-1
  • Operating Temperature - Junction: 125°C (Max)
封装: -
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4500 V
1080A
3.5 V @ 2500 A
Standard Recovery >500ns, > 200mA (Io)
-
140 mA @ 4500 V
-
Clamp On
DO-200AC, K-PUK
BG-D7514-1
125°C (Max)